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Experimental Evaluation of reconfigurable Brachiating Space robot

Journal of robotics and Mechatronics 2001年第5期13卷 548-553页

作者： Hayashi, ryoichi Matunaga, Saburo Ohkami, Yoshiaki Mechanical and Aerospace Engineering Tokyo Institute of Technology 2-12-1 O-okayama Meguro-ku Tokyo152-8552 Japan Tsukuba Space Center R&D Division National Space Development Agency of Japan 2-1-1 Sengen Tsukuba-shi Ibaraki-ken305-8505 Japan

We developed a reconfigurable brachiating space robot (rBr) based on modularized design, cable reduction, and distributed control able to move over KIBO (Japanese experimental module) of the International Space Station in a brachiating manner and to reconfigure its arms based on task requirements. This paper presents rBr capabilities, focusing on grasping handrails and reconfiguration. We conduct experiments to evaluate rBr brachiation and reconfiguration and present results. © Fuji technology Press Ltd.

关键词： Space stations

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Great improvement in IGBT turn-on characteristics with Trench Oxide PiN Schottky (TOPS) diode

Great improvement in IGBT turn-on characteristics with Trenc...

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International Symposium on Power Semiconductor devices and Ics (ISPSd)

作者： M. Nemoto M. Otsuki M. Kirisawa Y. Seki T. Naito r.N. Gupta C.r. Winterhalter H.-r. Chang Device Technology Laboratory Fuji Electric Corporate Research and Development Limited Matsumoto Nagano Japan Semiconductor Device R&D Center Matsumoto Factory Fuji Electric Company Limited Matsumoto Nagano Japan Rockwell Science Center Inc. Thousand Oaks CA USA

ISBN: (纸本)4886860567

Experimental results of the IGBT turn-on characteristics using 1200 V/50 A Trench Oxide PiN Schottky (TOPS) diode as the free wheeling diode are described. Compared to the conventional PiN diode, the TOPS diode showed an approximately 25% reduction in the turn-on loss of the IGBT. A reduction of 40% in the peak collector current of the IGBT has been achieved which results in a substantial suppression in the noise emission.

关键词： Insulated gate bipolar transistors Schottky diodes Semiconductor diodes Anodes Leakage current research and development Noise reduction Semiconductor device noise Switching loss rectifiers

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Backend process for cylindrical ru/Ta/sub 2/O/sub 5//ru capacitor for future drAM

Backend process for cylindrical Ru/Ta/sub 2/O/sub 5//Ru capa...

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International Conference on Solid-State and Integrated Circuit technology

作者： J. Lin T. Suzuki H. Minakata A. Shimada K. Tsunoda M. Fukuda T. Kurahashi Y. Fukuzumi A. Hatada A. Sato P.H. Sun Y. Ishibashi H. Tomita N. Nishikawa E. Ito W.C. Liu C.M. Chu r. Suzuki M. Nakabayashi d. Matsunaga K. Hieda K. Hashimoto S. Nakamura Y. Kohyama C.M. Shiah Technology Development Division Fujitsu Laboratories Limited Yokohama Japan Fujitsu Laboratories Limited Yokohama Japan Memory LSI R&D Center Toshiba Corporation Yokohama Japan DRAM Process Integration and Module Technology Department Winbond Electronics Corporation Yokohama Japan Process&Manufactg Engineering Center Toshiba Corporation Yokohama Japan

ISBN: (纸本)0780365208

A novel backend process is developed for the cylindrical ru/Ta/sub 2/O/sub 5//ru capacitor for 130 nm generation drAMs to achieve good electrical characteristics. Forming gas (3%H/sub 2//97%N/sub 2/) anneal (FGA) induced degradation can be effectively suppressed. For the cylindrical ru/Ta/sub 2/O/sub 5//ru capacitor with full backend processes, including passivation layer formation and a FGA, the cell leakage current and cell capacitance are 1 fA (at /spl plusmn/0.8 V at 85/spl deg/C) and 15fF, respectively.

关键词： Capacitors random access memory Tin resists Surface contamination Cleaning Fabrication Lithography Mass spectroscopy Etching

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Study on coined solder bumps on micro-via PCBs

Study on coined solder bumps on micro-via PCBs

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International Symposium on Electronic materials and Packaging

作者： Jae-Woong Nah K.W. Paik Won-Hoe Kim Ki-rok Hur Department of Materials Sci. & Engineering Korea Advanced Institute of Science and Technology Daejeon South Korea Circuit R&D Center Samsung Electro Mechanics Company Limited Yeongi Gun Chungcheongnam South Korea Bump 2 Team Microscale Company Limited Pyeongtaek Gyeonggi South Korea

ISBN: (纸本)0780371577

In this study, three solders, Sn-37Pb, Sn-3.5Ag, and Sn3.8-Ag-0.7Cu, were screen printed on both electroless Ni/Au and OSP finished micro-via PCBs. The pad opening size and pitch of micro-via PCB were 120 /spl mu/m and 230 /spl mu/m respectively. The diameter of the screen printed solder bumps was 150 /spl mu/m and the height above the solder mask was 85 /spl mu/m. After that, the solder bumps were coined until 25 /spl mu/m in height by a newly developed coining machine with variable pressure, temperature, and time. The Sn-37Pb solder formed less amounts of intermetallic compounds than all other Pb-free solders on both electroless Ni/Au and OSP (organic solderability preservatives) finished PCBs during solder reflows because of the lower Sn content and lower reflow temperature. For OSP finish, fracture occurred 100% within the solder regardless of reflow numbers. However, for Ni/Au finish, a brittle fracture at the Ni-Sn IMC layer or the interface between the Ni-Sn intermetallic and the P-rich layer was observed after several reflows. The relation of coining load vs. height of coined solder bump showed three stages of coining deformation. Coining loads needed for same height deformation increased as applied coining rate increased. And the planarity of coined solder bump could be increased as the coining rate decreased. As the coining temperature increased, lower coining loads were needed.

关键词： Flip chip Temperature Costs Assembly Printing Surface finishing Gold Intermetallic Packaging materials science and technology

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design of a robust SSSC supplementary controller to suppress the SSr in the series-compensated system

Design of a robust SSSC supplementary controller to suppress...

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IEEE Winter Meeting Power Engineering Society

作者： Jang-Cheol Seo Seung-Il Moon Jong-Keun Park Jong-Woong Choe Electro technology R&D Center LG Industrial Systems Co. Ltd Cheong Ju Korea Electrotechnology Research & Development Center LG Industrial Systems Company Limited Cheongju South Korea School of Electrical Engineering Seoul National University Seoul Korea School of Electrical Engineering Seoul National University Seoul South Korea

ISBN: (纸本)0780366727

This paper presents the design of an H/sub /spl infin// based robust static synchronous series compensator (SSSC) supplementary controller to suppress the subsynchronous resonance (SSr) in the series-compensated system. The modified IEEE second benchmark, System-1 model is employed for this study. In order to design the effective controller, the modal observability to the oscillation modes is considered. Comprehensive time domain simulation studies using the nonlinear system model show that the proposed H/sub /spl infin// SSSC supplementary controller can suppress the SSr efficiently in spite of the variations of power system operating conditions.

关键词： robust control Control systems Power system modeling Power system simulation Power transmission lines resonance Observability Shafts Nonlinear systems Nonlinear control systems

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Impact of Internal Electric Field and Localization Effect on Quantum Well Excitons in AlGaN/GaN/InGaN Light Emitting diodes

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physica status solidi (a) 2001年第1期183卷

作者： S.F. Chichibu T. Sota K. Wada O. Brandt K.H. Ploog S.P. denBaars S. Nakamura Institute of Applied Physics University of Tsukuba 1-1-1 Tennodai Tsukuba Ibaraki 305-8573 Japan Department of Electrical Electronics and Computer Engineering Waseda University 3-4-1 Ohkubo Shinjuku Tokyo 169-8555 Japan Department of Materials Science and Engineering Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge MA 02139 USA Paul-Drude-Institut für Festkörperelektronik Hausvogteiplatz 5-7 D-10117 Berlin Germany Department of Materials Engineering University of California Santa Barbara CA 93106 USA Department of Research and Development Nichia Chemical Industries Ltd. 491 Oka Kaminaka Anan Tokushima 774-8601 Japan

Strained In x Ga 1— x N quantum wells (QWs) on thick GaN base layers were investigated to verify the importance of localized QW excitons in their spontaneous emission mechanisms. A strength of the internal piezoelectric field ( F PZ ) across the QW increases with increasing x up to 1.4 MV/cm for x = 0.25, since the in-plain strain increases. For the QWs with the well thickness L greater than 3 nm, F PZ dominates the emission peak energy due to the quantum-confined Stark effect. Absorption spectra of both hexagonal and cubic InGaN QWs exhibited a broad band-tail regardless of the presence of F PZ normal to the QW plane. The luminescence peak energy of the 3 nm thick QWs was higher than the bandgap energy of the unstrained bulk crystal for x < 0.15, showing that doping of Si in barriers or injection of carriers effectively screens the field. The emission lifetime increased with increasing monitoring wavelength. Also, a temperature-induced change in the luminescence peak energy decreased with increasing x . The real-space variation of the luminescence peak energy was confirmed by the spatially-resolved monochromatic cathodoluminescence mapping method. The localization depth increases with increasing x . The carrier localization is confirmed to originate from the effective bandgap inhomogeneity due to a fluctuation of the local InN mole fraction, which is enhanced by the large and composition-dependent bowing parameter of InGaN material.

关键词： 71.35.Fg 78.55.Cr 78.67.de S7.14

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Abnormal Gate Oxide Failure due to Stress enhanced Polycrystalline Silicon diffusion

Abnormal Gate Oxide Failure due to Stress enhanced Polycryst...

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European Conference on Solid-State device research (ESSdErC)

作者： Yongseok Ahn daewon Ha Gwanhyeob Koh Taeyoung Chung Kinam Kim Technology Development Semiconductor R&D Center Memory division Samsung Electronics Company Limited Yongin si Kyunggi South Korea

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Neutron-induced activation cross sections: Measurements and model sensitivity

Neutron-induced activation cross sections: Measurements and ...

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2000 ANS International Topical Meeting on Advances in reactor Physics and Mathematics and Computation into the Next Millennium, PHYSOr 2000

作者： Plompen, A.J.M. reimer, P. Qaim, S.M. Fessler, A. Smith, d.L. Institute for Reference Materials and Measurements Retieseweg Geel2440 Belgium Forschungszentrum Jülich Institut für Nuklearchemie JülichD-52425 Germany Technology Development Division Argonne National Laboratory 9700 South Cass Avenue Illinois60439 United States

ISBN: (纸本)0894486551

New measured values are presented for neutron induced reaction cross sections on the low-activation structural material51V and on the long-lived fission product99Tc. In addition a method is illustrated that establishes the sensitivity of model parameters to measured reaction cross sections in the case of neutron-induced proton emission reactions on56,57Fe. Measurements have been made by the activation technique for the51V(n,n’α)47Sc reaction between 16.3 and 19.5 MeV to resolve large discrepancies in calculated over experimental values that resulted from benchmark tests of vanadium alloys. The data in this energy range are essentially unique. The99Tc(n,p)99Mo and99Tc(n,α)96Nb reaction cross sections have been measured from 8.5 to 12.3 and from 16 to 20.5 MeV. These measurements allow the first construction of an excitation curve for this candidate nuclide for transmutation. due to the large number of requested measurements for reaction cross sections the search for a reliable model description that allows extrapolation into the unknown is of particular importance. The sensititivity of model parameters to measured cross sections is a step towards quantitative statements about predictive power and validity of parameter systematics. In addition, it serves to establish priorities for new measurement campaigns. © 2000 Proceedings of the PHYSOr 2000 - ANS International Topical Meeting on Advances in reactor Physics and Mathematics and Computation into the Next Millennium. All rights reserved.

关键词： Neutrons

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A novel logic compatible gain cell with two transistors and one capacitor

A novel logic compatible gain cell with two transistors and ...

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Symposium on VLSI technology

作者： N. Ikeda T. Terano H. Moriya T. Emori T. Kobayashi ULSI R&D Laboratories LSI Business & Technology Development Group C.N.C. Sony Corporation Atsugi Kanagawa Japan

ISBN: (纸本)078036306X

Summary form only given. In consumer electronics, cost-effective embedded technology is an important subject. We propose a novel, cost-effective gain cell for memory embedded in logic LSIs. The new cell consists of two conventional bulk transistors and one MOS capacitor. It can be fabricated using the pure logic process with a few additional process steps. The fabrication cost of this cell is lower than that of drAM or SrAM at a memory density in the 1/spl sim/100 Mbit range.

关键词： random access memory MOSFETs MOS capacitors Threshold voltage Fabrication Costs CMOS logic circuits Capacitance Ultra large scale integration research and development

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Influence of three-phase voltage unbalance upon harmonic contents of the TrTS dC power supply and its motor-car driving systems

Influence of three-phase voltage unbalance upon harmonic con...

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IEEE Winter Meeting Power Engineering Society

作者： Yaw-Juen Wang Chien-Liang Chen Department of Electncal Engmeering Nahonal Yun-Lm University of Science and Technology Toulouse France R&D Engineering Development Center D-Link Corporation Hsinchu Taiwan

This paper studies the influences of three-phase voltage unbalance on the dC network of the Taipei rapid Transit System (TrTS) using EMTP. Also studied are harmonic currents produced by VVVF inverters of the motor-car... 详细信息

关键词： Voltage Power system harmonics Power supplies Power harmonic filters rectifiers Inverters rails Transformers EMTP Induction motors

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