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Journal of Vacuum Science & technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 2002年第3期20卷 1000-1007页

作者： Hyoung-Soo Ko Jae-Woong Nah Kyung W. Paik Y. Park Fab. Tech 1 Team Memory R&D Division Hynix Semiconductor Inc. San 136-1 Ami-ri Bubal-eub Ichon-si Kyungki-do 467-701 Korea Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology 373-1 Kusong-dong Yusong-gu Taejon 305-701 Korea Nano-Surface Group Korea Research Institute of Standards and Science P.O. Box 102 Yusong Taejon 305-600 Korea

The effects of CF4 addition to O2 reactive ion etching (rIE) of a polyetherimide ( Ultem®) surface and resultant via contact resistance were investigated using scanning electron microscopy (SEM), x-ray electron spectroscopy (XPS), and cross bridge Kelvin resistor (CBKr). In pure O2 rIE, the SEM micrograph showed that the originally smooth Ultem surface became rough and the rough features coarsened with increasing rIE time, resulting in residual particles on the metal pads. However, in the case of O2+CF4 rIE, the Ultem surface remained smooth throughout the etching process, and residue free metal pads were obtained. The XPS experiments identified that the origin of the Ultem surface roughening was organo-Si compound, which is easily converted to silicon oxide during O2 rIE. In contrast, the atomic fluorine in O2+CF4 rIE process etched out the silicon and the silicon oxide, resulting in smooth film surface and residue free metal pads. The metal to metal via contact resistance was measured by CBKr, and the pattern fabricated by O2+CF4 rIE showed lower contact resistance than those by O2 rIE. These results are discussed in the criterion of contact area and contact conformality differences.

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In vivoevaluation of a novel alginate dressing†

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Journal of Biomedical materials research Part B: Applied Biomaterials 2002年第4期48卷

作者： Yoshihisa Suzuki Masao Tanihara Yoshihiko Nishimura Kyoko Suzuki Yoshio Yamawaki Hitoshi Kudo Yoshimi Kakimaru Yasuhiko Shimizu Department of Plastic and Reconstructive Surgery Faculty of Medicine Kyoto University Kyoto 606-8507 Japan Graduate School of Materials Science NARA Institute of Science and Technology Nara 630-0101 Japan Department of Dermatology Otowa Hospital Kyoto 607 Japan Medical R&D Kuraray Co. Ltd. Okayama 710 Japan Research Center for Biomedical Engineering Kyoto University Kyoto 606-8507 Japan

Alginate dressings are currently used in the management of epidermal and dermal wounds, and provide a moist environment that leads to rapid granulation and reepithelialization. However, a cytotoxic effect on proliferation of fibroblasts and residual material with inflammation in healing wounds have been reported recently. We have developed a new alginate dressing (AGA-100), which does not have an inhibitory effect on proliferation of fibroblasts. The purpose of this study was to evaluate the new alginate dressing with respect to wound healing in full- and partial-thickness pig wounds and with respect to biodegradation following implantation into rabbit muscle. Kaltostat and Sorbsan, both well-established commercial dressings, were used as control. The closure rate of full-thickness wounds treated with AGA-100 was significantly higher on day 15 compared with that with Kaltostat and Sorbsan. reepithelialization rate of partial-thickness wounds treated with Sorbsan was statistically significantly lower on day 3 than those with the other two dressings. As to dressing debris remained in the healing wound, a large amount of foreign debris was noted in all the full-thickness wounds treated with Kaltostat or Sorbsan, while only about one-third of wounds treated with AGA-100 showed a little dressing debris. AGA-100 implanted into the muscle of rabbits was bioresorbed completely within 3 months. Therefore, dressing residue in AGA-100-treated full-thickness wounds might be fully absorbed in a few months. In conclusion, it is shown that our newly developed AGA-100 possesses superior properties compared with typical alginate dressings. © 1999 John Wiley & Sons, Inc. J Biomed Mater res (Appl Biomater) 48: 522–527, 1999

关键词： alginate wound dressing bioabsorbability

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A strategy for long data retention time of 512 Mb drAM with 0.12 /spl mu/m design rule

A strategy for long data retention time of 512 Mb DRAM with ...

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Symposium on VLSI technology

作者： H.S. Uh J.K. Lee Y.S. Ahn S.H. Lee S.H. Hong J.W. Lee G.H. Koh G.T. Jeong T.Y. Chung Kinam Kim Technology Development Team Semiconductor R&D Center Yongin-City Kyunggi Korea

ISBN: (纸本)4891140127

data retention time has been investigated for mass-produced 512 Mb drAMs with 0.12 /spl mu/m design rules. Cell junction leakage components were analyzed for the first time using a test structure. It was found that process-induced trap density and electric field at the storage node (SN) junction should be reduced to control leakage current and thus data retention time. Moreover, we propose a novel cell transistor using localized channel and field implantation (LOCFI) which greatly suppresses the ion implantation damage and reduces the electric field at the same time. Finally, data retention time has been improved by 3/spl sim/4 times due to the LOCFI cell transistor with optimized process conditions.

关键词： random access memory Silicon compounds Testing Etching Leakage current research and development Electron traps Ion implantation Power generation Energy consumption

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Transparent P-type Conducting LaCuOS Layered Oxysulfide

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MrS Online Proceedings Library 2001年第1期666卷 271-275页

作者： Ueda, Kazushige Inoue, Shin-ichiro Hirose, Sakyo Kawazoe, Hiroshi Hosono, Hideo Materials and Structures Laboratory Tokyo Institute of Technology Yokohama Japan R&D Center HOYA Corporation Akishima Japan

materials design for transparent p-type conducting oxides was extended to oxysulfide system. LaCuOS was selected as a candidate for a transparent p-type semiconductor. It was found that the electrical conductivity of LaCuOS was p-type and controllable from semiconducting to semi-metallic states by substituting Sr2+ for La3+. LaCuOS films showed high transparency in the visible region, and the bandgap estimated was approximately 3.1 eV. Moreover, it was revealed that LaCuOS showed sharp excitonic absorption and emission at the bandgap edge, which is advantageous for optical applications. A layered oxysulfide, LaCuOS, was proposed to be a promising material for optoelectronic devices.

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Highly scalable sub-10F/sup 2/ 1T1C COB cell for high density FrAM

Highly scalable sub-10F/sup 2/ 1T1C COB cell for high densit...

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Symposium on VLSI technology

作者： S.Y. Lee H.H. Kim d.J. Jung Y.J. Song N.W. Jang M.K. Choi B.K. Jeon Y.T. Lee K.M. Lee S.H. Joo S.O. Park K. Kim Technology Development Team R&D Center Memory Division Samsung Electronics Company Limited South Korea

ISBN: (纸本)4891140127

recently, technology innovation for high density and high performance FrAM has been pronounced. Among the breakthrough technologies for high density and high performance FrAM, 1T1C capacitor-on-bitline (COB) cell technology is essential because it can greatly reduce FrAM cell size compared to previous and current 2T2C FrAMs (Kinam Kim, 1999; Lee et al., 1999). design improvement for enhanced sensing ability is also a promising technology for highly reliable mega-bit density FrAM (Jeon et al, 2000). Although the recent demonstration shows a promising future for stand-alone FrAM applications, current 1T1C COB FrAM still has incomparably large cell size factor compared to drAM and flash. This is one of the most challenging issues that FrAM faces for developing high-density stand-alone memory. In this work, a novel cell structure for sub-10 F/sup 2/ cell size is for the first time developed. The key technologies for the sub-10 F/sup 2/ novel cell are: (1) advanced oxidation barrier and PZT film technologies which enables MIM ferroelectric capacitors to be lowered to /spl sim/500 nm thick stack: (2) single-mask capacitor etching technology which can produce >80/spl deg/ ferroelectric capacitor fence slope; (3) no cell via contact technology by which capacitor pitch can ideally be reduced to 2F; (4) an Al-reflow process which enables sub-0.4 /spl mu/m back-end interconnection without degrading the ferroelectric capacitor. The novel cell is demonstrated with an experimental 4 Mb FrAM, where the 1T1C COB cell is fabricated with folded bit line architecture and plate line-up sensing scheme.

关键词： random access memory Ferroelectric films Nonvolatile memory Plugs Ferroelectric materials MIM capacitors Tin Electrodes Oxidation Etching

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SAdS: A new component of Fas-dISC is the accelerator for cell death signaling and is downregulated in patients with colon carcinoma (retraction of vol 7, pg 88, 2001)

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NATUrE MEdICINE 2001年第6期7卷 749-749页

作者： Suzuki, A Obata, S Hayashida, M Kawano, H Nakano, T Shiraki, K Project for the Cell Death Research Basic Technology Research Laboratory Daiichi Pharmaceutical Co. Ltd. Tokyo R&D Center Kitakasai 1-16-13 Edogawa-ku Tokyo 134-8630 Japan Biochemical Laboratory Research & Development Group Kishida Chemical Co. Ltd. Sanda Factory Techno-Park 14-10 Sanda Hyogo 669-1339 Japan Project for the Cell Death Research Basic Technology Research Laboratory Daiichi Pharmaceutical Co. Ltd. Tokyo R&D Center Kitakasai 1-16-13 Edogawa-ku Tokyo 134-8630 Japan Project for the Cell Death Research Basic Technology Research Laboratory Daiichi Pharmaceutical Co. Ltd. Tokyo R&D Center Kitakasai 1-16-13 Edogawa-ku Tokyo 134-8630 Japan The First Department of Internal Medicine Mie University School of Medicine Edobashi 2-174 Tsu Mie 514-8507 Japan The First Department of Internal Medicine Mie University School of Medicine Edobashi 2-174 Tsu Mie 514-8507 Japan

Fas is the death receptor, transducing cell death signaling upon stimulation by Fas ligand. during Fas-initiated cell death signaling, the formation of Fas-death inducing signaling complex (Fas-dISC) is the first step. Here we have identified a new component of Fas-dISC which we call 'small-accelerator for death signaling' (SAdS). SAdS cdNA encodes a 150 amino acid polypeptide (Mr = 16,700). during Fas-mediated cell death, SAdS enhances the interaction of Fas-death domain-interactive factors (FAdd) and procaspase-8, and deletion mutant analysis has identified FAdd- and caspase-8-interactive domains in SAdS. Inhibition or removal of SAdS delays Fas-mediated cell death. In addition, we demonstrate the deletion or mutation of SAdS in patients with colon carcinoma and that exogenous SAdS expression in human colon carcinoma SW480 cells that lack SAdS leads to re-acquisition of Fas-mediated cell death. Here, we propose that SAdS is one of the cell death-associated factors and enhances Fas-dISC formation, especially FAdd and procaspase-8 recruitment.

关键词： down-regulation Signal Transduction Antigens Cd95 Apoptosis Base Sequence Caspases Colonic Neoplasms dNA Primers Humans Protein Binding

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Feasibility study for recycling of JVC compact discs for use in the manufacturing of Motorola plastic housings

Feasibility study for recycling of JVC compact discs for use...

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International Symposium on Environmentally Conscious design and Inverse Manufacturing (Ecodesign)

作者： M. Stutz d. Schnecke T. Takahashi N. Kawai K. Tsujita MATC Europe Motorola Advanced Technology Center Europe Wiesbaden Germany Technology Development Division (Kurihama R&D Center) Victor Company of Japan Limited Yokosuka Kanagawa Japan

ISBN: (纸本)0769512666

In a joint research project between JVC Kurihama r&d Center and Motorola Advanced technology Center-Europe the recycling of JVC compact discs (Cds) for use in the manufacturing of Motorola plastic housings was developed and evaluated. returned Cds, made out of polycarbonate (PC), can potentially be used to mold housings of electronic products, also made out of PC. Closing the PC loop is not only technically feasible, but also a gain for the environment, reducing the resource and energy consumption comparing virgin versus recycled PC. To allow returned Cds to be processed into plastic housings, Cds have to be decoated of the aluminum layer, the lacquer and the label ink in order to serve as input material for producing recycled PC. Then the clear Cds are crushed, blended with virgin PC and pelletized to obtain defined material properties. The JVC Kurihama r&d Center developed decoating methods for returned Cds, based on extensive trials using mechanical and chemical decoating techniques, resulting in clean Cd parts. The material properties of the plastic recyclate was tested and specified. After evaluating the promising test results by JVC Kurihama r&d Center on the recycled PC material, the Motorola Advanced technology Center-Europe decided to run a trial mold of an actual housing at a molder in Germany. A two-way mobile radio cover was molded with recycled Cd material. The material properties of the original versus recycled resin were evaluated. The cover made with recycled Cds was put through an ALT (Accelerated Life Test), yielding in more information on the possibilities to use recycled material. The joint research project shows that a high tech product such as the Cd can serve as a basis for housings of electronic and electrical equipment after its useful life. With a sophisticated technology the PC loop is closed, benefiting ecology and economy.

关键词： recycling Plastics Material properties materials testing Manufacturing Energy consumption Aluminum Lacquers Ink Chemicals

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Highly reliable interconnect integration of Cu and low-k organic polymer based on fine Cd controls

Highly reliable interconnect integration of Cu and low-k org...

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IEEE International Conference on Interconnect technology

作者： Y. Nishioka S. Tomohisa Y. Toyoda T. Fukada T. Satake M. Matsuura S. domae A. Ohsaki ULSI Development Center Mitsubishi Electric Corporation Limited Itami Hyogo Japan Advanced Technology R&D Center Mitsubishi Electric Corporation Limited Amagasaki Hyogo Japan ULSI Process Technology Development Center Matsushita Electronics Corporation Kyoto Japan

ISBN: (纸本)0780366786

A Cu dual damascene interconnect with a low-k organic polymer was fabricated and Cd changes of its vias and trenches were investigated. By means of optimizing both the SiO/sub 2/ etching condition and the SiN thickness in a stacked hard mask, Cd changes of trenches from a designed pattern size to the final one were suppressed up to about 10 nm. As a result, electrical properties were controlled and kept close to calculated values from the designed pattern size. This synthetic process integration based on the fine Cd control technique is promising for the realization of a fine dual damascene interconnect of 0.13-/spl mu/m and further technology node.

关键词： Etching Silicon compounds Ultra large scale integration dielectric materials Fabrication Polymer films Size measurement resists research and development design optimization

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CMOS low-noise/driver MMIC amplifiers for 2.4-GHz and 5.2-GHz wireless applications

CMOS low-noise/driver MMIC amplifiers for 2.4-GHz and 5.2-GH...

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Topical Meeting on Silicon Monolithic Integrated Circuits in rF Systems

作者： K. Yamamoto T. Heima A. Furukawa M. Ono Y. Hashizume H. Komurasaki H. Sato N. Kato System LSI Development Center Mitsubishi Electric Corporation Limited Itami Hyogo Japan Advanced Technology R&D Center Mitsubishi Electric Corporation Limited Itami Hyogo Japan Information Technology R&D Center Mitsubishi Electric Corporation Limited Itami Hyogo Japan System LSI Division Mitsubishi Electric Corporation Limited Itami Hyogo Japan

This paper describes two kinds of on-chip matched low-noise/driver MMIC amplifiers (LN/d-As) suitable for 2.4 GHz and 5.2 GHz short-range wireless applications. The successful use of the current-reuse topology and interdigitated capacitors (IdCs) enables sufficiently low-noise and high output power operations with low current dissipation despite the chip fabrication in a standard bulk CMOS leading to large rF substrate losses. The main measurement results of the two LN/d-As are as follows: a 3.8 dB noise figure (NF) and a 10.1 dB gain under conditions of 1.8 V and 6 mA, a 3.4 dBm 1 dB gain compressed output power (P/sub 1dB/) at 2.4 V and 13 mA for the 2.4-GHz LN/d-A, and a 4.9 dB NF and a 11.1 dB gain with a 1.8 V and 10 mA supply, a 2.3 dBm P/sub 1dB/ at 2.4 V and 16 mA for the 5.2 GHz LN/d-A.

关键词： driver circuits MMICs Low-noise amplifiers Noise measurement Gain Power generation radiofrequency amplifiers Topology Capacitors Power amplifiers

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A 700 V lateral power MOSFET with narrow gap double metal field plates realizing low on-resistance and long-term stability of performance

A 700 V lateral power MOSFET with narrow gap double metal fi...

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International Symposium on Power Semiconductor devices and Ics (ISPSd)

作者： N. Fujishima M. Saito A. Kitamura Y. Urano G. Tada Y. Tsuruta Devices Technology Laboratory Fuji Electric Corporate Research and Development Limited Matsumoto Nagano Japan Semiconductor Device R&D Center Fuji EIectric Company Limited Matsumoto Nagano Japan

ISBN: (纸本)4886860567

A 700 V lateral power MOSFET with a narrow gap double metal field plate structure is proposed. The MOSFET exhibits an improved specific on-resistance of 26 /spl Omega/ mm/sup 2/ and achieves extremely stable performance under long-term high-voltage operation. A power IC, which integrates the developed MOSFET using 1 /spl mu/m CMOS process, has successfully been applied to AC to dC converters in portable appliances.

关键词： MOSFET circuits Power MOSFET FETs research and development dC-dC power converters Passivation Stability Laboratories Semiconductor devices Power integrated circuits

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