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Post-exposure delay stability for 193 nm single-layer photoresist: Solvent effect

Journal of Polymer Science 1999年第1期38卷

作者： Seok-Ho Hwang Jae-Chang Jung Applied Polymer Materials Laboratory Korea Institute of Industrial Technology (KITECH) 35-3 Hongchon-Ri Ipjang-Myun Chonan 330-820 Republic of Korea Memory R&D Division Hyundai Electronics Industries Co. Ltd. Ichon 467-701 Republic of Korea

We investigated the effect of post-exposure delay (PEd) for poly[2-(2-hydroxyethyl)carboxylate-5-norbornene- co -2-t-butylcarboxylate-5-norborene- co -2-carboxylic acid-5-norborene- co -maleic anhydride] [poly(HNC/BNC/NC/MA)] resist film, which formulated with photoacid generator (PAG) under the several solvents. The solvents used in this study were propylene glycol methyl ether acetate (PGMEA), isobutyl methyl ketone (IBMK), 2-heptanone (2-H), and (2-methoxy)ethyl acetate (MEA). We have introduced a new concept of rheological approach to explain the solvent effect for PEd by using rheometer and light scattering equipment. In the PGMEA solvent, the resist solution shows Newtonian behavior, but the other resist solutions show shear-thinning behavior. The resist film prepared by the shear-thinning solvent exhibited good PEd stability. In order to explain these results, we conjectured that the resist polymer existed in long-rod shape under the specific solvent and high shear rate. Also, we could obtain 0.16 μm L/S patterns in a severely amine-contaminated environment (about 35 ppb) after 30 min PEd by using this method. © 2000 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 38: 148–153, 2000

关键词： post-exposure delay ArF resist shear-thinning resist alicyclic polymer

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Effect of gas ambient on improvement in emission behavior of Si field emitter arrays

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Journal of Vacuum Science & technology B: Microelectronics Processing and Phenomena 1998年第2期16卷 799-799页

作者： Takai, Mikio Morimoto, Hiroji Hosono, Akihiko Kawabuchi, Shinji Research Center for Materials Science at Extreme Conditions and Graduate School of Engineering Science Osaka University Toyonaka Osaka 560 Japan Advanced Technology R&D Center Mitsubishi Electric Corporation 1-1 Tsukaguchi-Honmachi 8 Amagasaki Hyogo 661 Japan

Gated Si field emitter arrays (FEAs) have been operated in various gas atmospheres such as air, H2 , O2 , and Ar at 10−7 Torr to improve the emission behavior. The electron emission from the FEAs was enhanced by a factor of up to 10 during or after gas ambient emission with H2 , O2 , and Ar, while the improvement was not observed by a process with air. Fowler–Nordheim plots indicated a drastic change in slope only for H2 processes, in which hydrogen atoms would adsorb to Si tip surfaces. An emission pattern with a fourfold symmetry was observed for a single-tip emitter after hydrogen ambient emission, indicating the tip surface crystallinity after gas ambient emission.

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Effect of laser irradiation on electron emission from Si field emitter arrays

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Journal of Vacuum Science & technology B: Microelectronics Processing and Phenomena 1998年第2期16卷 780-780页

作者： Takai, M. Suzuki, N. Morimoto, H. Hosono, A. Kawabuchi, S. Research Center for Materials Science at Extreme Conditions and Graduate School of Engineering Science Osaka University Toyonaka Osaka 560-8531 Japan Advanced Technology R&D Center Mitsubishi Electric Corporation 1-1 Tsukaguchi-Honmachi 8 Amagasaki Hyogo 661 Japan

Ultraviolet (UV) laser lights were irradiated on Si field emitter arrays before and during electron emission to investigate the surface cleaning effect of laser light irradiation. UV light irradiation for 2–10 min before electron emission in a vacuum resulted in enhanced electron emission by 50%, which gradually decreased after further aging. Laser light irradiation during electron emission could induce enhanced electron emission by a factor of 2.4 due to photoinduced carrier generation and surface cleaning, and higher electron emission by a factor of 2 than the initial emission was observed even after laser light irradiation and prolonged aging for 20 h.

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Electron emission from gated silicide field emitter arrays

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Journal of Vacuum Science & technology B: Microelectronics Processing and Phenomena 1998年第2期16卷 790-790页

作者： Takai, M. Iriguchi, T. Morimoto, H. Hosono, A. Kawabuchi, S. Research Center for Materials Science at Extreme Conditions and Graduate School of Engineering Science Osaka University Toyonaka Osaka 560-8531 Japan Advanced Technology R&D Center Mitsubishi Electric Corporation 1-1 Tsukaguchi-Honmachi 8 Amagasaki Hyogo 661 Japan

Silicidation of the top surface of Si tips with a Nb gate structure has been carried out to improve the emission behavior of Si field emitter arrays (FEAs). A Pt layer with a thickness of 5–10 nm was deposited through the gate opening and annealed at 850 °C. The electron emission was enhanced by a factor of 10 and the average emission per tip was 3.5 μA for a 10×10 FEA. Fowler–Nordheim plots indicated the decrease in work function after silicidation.

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Guest Editorial

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Advanced Performance materials 1998年第4期5卷 263-264页

作者： Kim, Nack J. Lee, Y.T. Kim, H.M. Center for Advanced Aerospace Materials and Dept. of Materials Science & Engineering Pohang University of Science and Technology Pohang Korea Department of Test and Evaluation Korea Institute of Machinery and Materials Changwon Korea National R&D Planning and Management Science and Technology Policy Institute Cheongryang Seoul Korea

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0.1 /spl mu/m level contact hole pattern formation with KrF lithography by resolution enhancement lithography assisted by chemical shrink (rELACS)

0.1 /spl mu/m level contact hole pattern formation with KrF ...

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International Electron devices Meeting (IEdM)

作者： T. Toyoshima T. Ishibashi A. Minanide K. Sugino K. Katayama T. Shoya I. Arimoto N. Yasuda H. Adachi Y. Matsui Advanced Technology R&D Center Mitsubishi Electronic Corporation Amagasaki Hyogo Japan ULSI Development Center Mitsubishi Electronic Corporation Itami Hyogo Japan Ryoden Semiconductor System Engineering Corporation Itami Hyogo Japan

We developed a hole shrink process named rELACS (resolution Enhancement Lithography Assisted by Chemical Shrink) that is a robust and low-cost method. This method makes use of crosslinking reaction between the materials coated on the resist pattern, and the acid existing at the resist wall. By the rELACS, we could shrink KrF resist hole patterns to 0.1 /spl mu/m level. The shrinkage of hole size is dependent on both baking temperature and initial hole size. This process has been established for the fabrication of 0.20 /spl mu/m devices.

关键词： Pattern formation Lithography resists Shape Size control Temperature dependence Chemical processes

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The best combination of aluminum and copper interconnects for a high performance 0.18 /spl mu/m CMOS logic device

The best combination of aluminum and copper interconnects fo...

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International Electron devices Meeting (IEdM)

作者： M. Igarashi A. Harada H. Amishiro H. Kawashima N. Morimoto Y. Kusumi T. Saito A. Ohsaki T. Mori T. Fukada Y. Toyoda K. Higashitani H. Arima ULSI Development Center Mitsubishi Electronic Corporation Itami Hyogo Japan Mitsubishi Denki Kabushiki Kaisha Chiyoda-ku Tokyo JP Advanced Technology R&D Center Mitsubishi Electronic Corporation Amagasaki Hyogo Japan

A high performance 0.18 /spl mu/m CMOS logic device has been developed with 0.15 /spl mu/m transistors and six-level interconnects. The multi-level interconnect system consists of a conventional process with Al wire and a dual damascene process with Cu wire. 4-level Al interconnects with fine metal pitch are suitable for short distance wiring such as intra block cell to cell interconnects, whereas 2-level Cu interconnects with coarse metal pitch are used for long distance wiring such as mega block to block interconnects to achieve high-speed and high-density LSI devices.

关键词： Aluminum Copper Wire Parasitic capacitance Wiring delay effects High-K gate dielectrics Logic devices Etching Oxidation

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Contributory presentations/posters

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Journal of Biosciences 1999年第1期24卷 33-198页

作者： N. Manoj V. r. Srinivas A. Surolia M. Vijayan K. Suguna r. ravishankar r. Schwarzenbacher K. Zeth diederichs G. M. Kostner A. Gries P. Laggner r. Prassl Madhusudan Pearl Akamine Nguyen-huu Xuong Susan S. Taylor M. Bidva Sagar K. Saikrishnan S. roy K. Purnapatre P. Handa U. Varshney B. K. Biswal N. Sukumar J. K. Mohana rao A. Johnson Vasantha Pattabhi S. Sri Krishna Mira Sastri H. S. Savithri M. r. N. Murthy Bindu Pillai Kannan M. V. Hosur Mukesh Kumar Swati Patwardhan K. K. Kannan B. Padmanabhaa S. Sasaki-Sugio M. Nukaga T. Matsuzaki S. Karthikevan S. Sharma A. K. Sharma M. Paramasivam P. Kumar J. A. Khan S. Yadav A. Srinivasan T. P. Singh S. Gourinath Neelima Alam A. Srintvasan Vikas Chandra Punit Kaur Ch. Betzel S. Ghosh A. K. Bera S. Bhattacharya S. Chakraborty A. K. Pal B. P. Mukhopadhyay I. dey U. Haldar Asok Baneriee Jozef Sevcik Adriana Solovicova K. Sekar M. Sundaralingam N. Genov dong-cai Liang Tao Jiang Ji-ping Zhang Wen-rui Chang Wolfgang Jahnke Marcel Blommers S. C. Panchal r. V. Hosur Bindu Pillay Puniti Mathur S. Srivatsun ratan Mani Joshi N. r. Jaganathan V. S. Chauhan H. S. Atreya S. C. Sahu K. V. r. Chary Girjesh Govil Elisabeth Adjadj Éric Quinjou Nadia Izadi-Pruneyre Yves Blouquit Joël Mispelter Bernadette Heyd Guilhem Lerat Philippe Milnard Michel desmadreil Y. Lin B. d. Nageswara rao Vidva raghunathan Mei H. Chau Prashant Pesais Sudha Srivastava Evans Coutinho Anil Saran Leizl F. Sapico Jayson Gesme Herbert Lijima raymond Paxton Thamarapu Srikrishnan C. r. Grace G. Nagenagowda A. M. Lynn Sudha M. Cowsik Sarata C. Sahu S. Chauhan A. Bhattacharya G. Govil Anil Kumar Maurizio Pellecchia Erik r. P. Zuiderweg Keiichi Kawano Tomoyasu Aizawa Naoki Fujitani Yoichi Hayakawa Atsushi Ohnishi Tadayasu Ohkubo Yasuhiro Kumaki Kunio Hikichi Katsutoshi Nitta V. rani Parvathy r. M. Kini Takumi Koshiba Yoshihiro Kobashigawa Min Yao Makoto demura Astushi Nakagawa Isao Tanaka Kunihiro Kuwajima Jens Linge Seán O. donoghue Michael Nilges G. Chakshusmathi Girish S. ratnaparkhi P. K. Madhu r. Varadarajan C. Tetreau Molecular Biophysics Unit Indian Institute of Science Bangalore India Austrian Academy of Sciences Institute of Biophysics and X-ray Structure Research Graz Austria Faculty of Biology University of Konstanz Germany Institute of Medical Biochemistry University of Graz Austria Howard Huges Medical Institute Department of Chemistry & Biochemistry University of California La Jolla USA Department of Chemistry & Biochemistry University of California San Diego La Jolla USA Molecular Biophysics Unit India Department of Microbiology &Cell Biology Indian Institute of Science Bangalore India Macromolecular Structure Laboratory NCI - Frederick Cancer Research and Development Center ABL - Basic Research Program Frederick USA Department of Crystallography and Biophysics University of Madras Chennai Biochemistry Department Indian Institute of Science Bangalore India Condensed Matter Physics Division B.A.R.C. Trombay Mumbai Condensed Matter Physics Division Bhabha Atomic Research Centre Trombay Mumbai IMCB The University of Tokyo Tokyo Japan Mitsubishi Chemical Corporation Yokohama Research Center Yokohama Japan Faculty of Pharmaceutical Sciences Chiba University Chiba Japan Department of Biophysics All India Institute of Medical Sciences New Delhi India Department of Biophysics All India Institute of Medical sciences New Delhi India Institüt Physiologische Chemie Hamburg Germany Biophysics Department Bose Institute Calcutta India Slovak Academy of Sciences Institute of Molecular Biology Bratislava Slovakia Indian Institute of Science Bioinformatics Centre Bangalore Departments of Chemistry and Biochemistry Biological Macromolecular Structure Center USA Bulgarian Academy of Sciences Institute of Organic Chemistry Sofia Bulgaria Chinese Academy of Sciences Institute of Biophysics Beijing China Novartis Pharma AG Preclinical Research Basel Switzerland Department of Chemical Sciences Tata Institute of Fundamental Research Mumbai India Solid State Physics Div

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Excitation functions of (n,2n), (n,p), (n,np+pn+d), and (n,α) reactions on isotopes of chromium

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Physical review C 1998年第2期58卷 996-996页

作者： A. Fessler E. Wattecamps d. L. Smith S. M. Qaim Institut für Nuklearchemie Forschungszentrum Jülich GmbH D-52425 Jülich Germany Commission of the European Communities Joint Research Centre Institute for Reference Materials and Measurements B-2440 Geel Belgium Argonne National Laboratory Technology Development Division Argonne Illinois 60439

Excitation functions were measured for the 52Cr(n,2n)51Cr, 52Cr(n,p)52V, 53Cr(n,p)53V, 53Cr(n,np+pn+d)52V, 54Cr(n,p)54V, 54Cr(n,np+pn+d)53V, and 54Cr(n,α)51Ti reactions from 9 to 21 MeV. Use was made of the activation technique in combination with high-resolution γ-ray spectrometry. Monoenergetic neutrons produced via the 2H(d,n)3He and 3H(d,n)4He reactions were used to irradiate samples of metallic chromium, 52Cr2O3, 53Cr2O3, and 54Cr2O3. The neutron fluence rates were determined via the 27Al(n,p)27Mg, 27Al(n,α)24Na, 56Fe(n,p)56Mn, and 93Nb(n,2n)92mNb monitor reactions. Short-lived activities were investigated using a pneumatic sample transport system. Statistical model calculations taking into account preequilibrium effects were performed for all the reactions using a consistent set of model parameters. The experimental excitation functions helped appreciably to resolve the discrepancies in evaluated data files. Good agreement was found between our experimental data and the new model calculations.

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Investigation of Pt/Ta diffusion barrier using hybrid conductive oxide (ruO2) for high dielectric applications

Journal of Vacuum Science & Technology B: Microelectronics a...

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Journal of Vacuum Science & technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 1998年第3期16卷 1137-1141页

作者： dong-Soo Yoon Hong Koo Baik Sung-Man Lee Sang-In Lee Hyun ryu Hwack Joo Lee Department of Metallurgical Engineering Yonsei University Seoul 120-749 Korea Department of Materials Engineering Kangwon National University Chuncheon Kangwon-Do 200-701 Korea Technology Development Semiconductor R&D Center Samsung Electronics Co. San#24 Nongseo-Lee Kiheung-Eup Yongin-City Kyungki-Do 449-900 Korea New Material Evaluation Center KRISS Taejon 305-600 Korea

The Pt/Ta diffusion barrier using hybrid conductive oxide (ruO2) for dynamic random access memory and ferroelectric random access memory capacitor bottom electrodes is proposed. The thermal stability of Pt+ruO2 (50 nm)/Ta+ruO2 (50 nm)/TiSi2/poly-Si/SiO2/Si contact system is investigated and compared to that of the Pt(50 nm)/Ta(50 nm)/TiSi2/poly-Si/SiO2/Si contact system. The Pt+ruO2/Ta+ruO2/TiSi2/poly-Si/SiO2/Si contact system sustained its structure up to 650 °C, whereas Pt/Ta/TiSi2/poly-Si/SiO2/Si contact system was completely degraded after annealing at 650 °C. In the former case, the addition of ruthenium dioxide (ruO2) into the Pt bottom electrode layer led to retardation of the oxygen indiffusion, preventing the indiffusion of oxygen up to 650 °C. In addition, the Ta+ruO2 diffusion barrier showed an amorphous structure and ruO2 is bound to the Ta matrix, inhibiting the interdiffusion of O, Pt, and Si through grain boundaries which can act as fast diffusion paths up to high temperatures. Therefore, it appeared that the barrier properties of Pt/Ta diffusion barrier are improved by using hybrid conductive oxide (ruO2).

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