In this report the development of an artificial neural network, capable of predicting the temperature after the last finishing stand of a hot strip mill for a certain class of steels, is described. Three neural networ...
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In this report the development of an artificial neural network, capable of predicting the temperature after the last finishing stand of a hot strip mill for a certain class of steels, is described. Three neural networks with different numbers of hidden nodes (3, 5 and 7) were trained. The relative standarddeviation in finish temperature as predicted by the best performing neural network model (7 hidden nodes) was just over 25% smaller than that of the linear Hoogovens model. This improved accuracy can be explained by the incorrect assumption in the Hoogovens model of lineardependence of the finishing temperature on some input parameters. With the trained neural network, the influence of the various input parameters on the finishing temperature could be examined. The dependencies predicted by the neural network can be approximated by a linear fit and are a factor 2 lower for all input parameters. it is conceivable that operation of the mill using an artificial neural network for the prediction of the finishing temperature would have resulted in smaller operational fluctuations.
4 in. field-emission display (FEd) devices have been constructed and analyzed utilizing Spindt-type cathodes, uniquely developed low-voltage phosphors and spacers. The cathode was especially fabricated without using a...
4 in. field-emission display (FEd) devices have been constructed and analyzed utilizing Spindt-type cathodes, uniquely developed low-voltage phosphors and spacers. The cathode was especially fabricated without using a resistive layer. The reliability and the feasibility of the FEddevice have been tested both in a vacuum chamber and in a fully sealed condition. The electrical aging effect on microtip emission properties were carried out, which resulted in significant enhancement in electrical characteristics of the FEddevice. The fully sealed FEddevice was analyzed as a function of lifetime. Additionally, the characteristics of the phosphor and the spacer used in our FEddevice are discussed.
We present performance results of 4-inch full-color field emission display (FEd) devices which are constructed by using Spindt type arrays with 80,000,000 Mo-metal tips, spacers, uniquely-developed low voltage color p...
We present performance results of 4-inch full-color field emission display (FEd) devices which are constructed by using Spindt type arrays with 80,000,000 Mo-metal tips, spacers, uniquely-developed low voltage color phosphors. Spindt type microtips with less than 1.1 um in hole size are fabricated using a total internal reflection (TIr) holographic lithograpy method. Each color phosphor is electrophoretically deposited on the ITO line. The spacer which is screen-printed is characterized by a 3-dimentional surface analysis system. Electron emission pattern and luminance test of each pixel without cross talk are analyzed underdifferent gate voltages. In addition, the total pressure andresidual gas distributions inside the panel are investigated at various gap sizes between the cathode and anode plates.
Selective chemical etching and atomic force microscope (AFM) examination has been performed to delineate two-dimensional (2-d) dopants profiles of p/n-type well and junction areas. Selectivity strongly depended on the...
Selective chemical etching and atomic force microscope (AFM) examination has been performed to delineate two-dimensional (2-d) dopants profiles of p/n-type well and junction areas. Selectivity strongly depended on the types of dopants and the ratio of etching solutions. Calibration showed that the carrier concentrations in both p/n-type regions could be delineateddown to a level of ∼1×1017/cm3. The AFM-induced profiles were compared with the calculateddata provided by the 2-d process simulators such as TrIM and SUPrEM-IV.
In this study, we investigated the effects of the addition of CF4, Cl2, and N2 gases to oxygen electron cyclotron resonance (ECr) plasma on the reactive ion etching (rIE) properties of ruO2 film such as etch rate, sel...
In this study, we investigated the effects of the addition of CF4, Cl2, and N2 gases to oxygen electron cyclotron resonance (ECr) plasma on the reactive ion etching (rIE) properties of ruO2 film such as etch rate, selectivity, and etched profile. The concentration of the etching species in the plasma was analyzed with an optical emission spectroscopy (OES) and a quadrupole mass spectrometer (QMS). The etch product was also examined with QMS. p]The addition of a small amount of CF4, Cl2, or N2 to the O2 plasma increases the concentration of oxygen radicals and accordingly increases the etch rate of the rUO2 films appreciably. The etch rate of the ruO2 film was enhanced more with the addition of a small amount of CF4 and CI2 than with the addition of N2. On the contrary, the etched profile obtained in O2/N2 plasma was superior, without any damaged layer at the sidewall, to O2/CF4 and O2/Cl2 plasma. The selectivity of ruO2 to Si)2 mask was over 20:1 for each of the additive gas proportion at which the etch rate was maximum for each plasma system.
The alignment performances of the video-based scattered-light alignment (SLA) system for 0.1 μm lithography are described in this article. The SLA system has high sensitivity to the silicon carbide (SiC) mask without...
The alignment performances of the video-based scattered-light alignment (SLA) system for 0.1 μm lithography are described in this article. The SLA system has high sensitivity to the silicon carbide (SiC) mask without an antireflection coating (ArC). This article especially focuses on the alignment accuracy in processed wafers and the dependency of the alignment accuracy on the SiC membrane thickness. A series of alignment tests was done on a lab-based vertical wafer stage using the SiC masks. In order to evaluate the alignment accuracy in processed wafers, we prepared four processed wafer types: nitride, oxide, poly-Si, and aluminum. The high position sensing repeatability in the range of 4.8–6.4 nm (3σ) was obtained using the combination of the four processed wafers and a 2-μm-thick SiC membrane without the ArC. We also obtained the alignment accuracy using the wafer alignment marks only, resulting in an alignment accuracy of 10.0, 8.8, 9.1, and 35.7 nm (3σ) for the nitride, oxide, poly-si, and aluminum wafers, respectively. In addition, the dependency of the alignment accuracy on the SiC membrane thickness was obtained using the membranes with thicknesses of 2, 3, 4, and 5 μm. An improvement of the alignment accuracy in the aluminum is discussed.
An optical add/drop multiplexer (AdM) has allowed us to exploit scalability in wavelength-division multiplexing (WdM) networks. A Mach Zehnder interferometer with photoinduced fiber Bragg gratings (MZ FG) is a promisi...
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ISBN:
(纸本)1557524815
An optical add/drop multiplexer (AdM) has allowed us to exploit scalability in wavelength-division multiplexing (WdM) networks. A Mach Zehnder interferometer with photoinduced fiber Bragg gratings (MZ FG) is a promising device as a wavelength-selectable optical AdM circuit. In this study, we will present a novel method to provide the interferometric cross talk-free device based on a cascaded MZ-FG.
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