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Arsenal ship program certification plan

NAVAL ENGINEErS JOUrNAL 1998年第1期110卷 249-261页

作者： Arntson, S Lind, W Turner, JJ Blaiklock, WC Tedesco, M Stephen G. Arntson is an independent consultant. A degree Naval Architect he has over 38 years of experience in the design construction and maintenance of surface ships. His experience includes 28 yeus with the Naval Sea Systems Command Naval Ship Engineering Centerl Bureau of Ships specializing in the structural design of Naval surface ships and 7 years with ABS Specializing in the application of commercial ship design practices. Most recently he worked with both NASSCO and ABS MZ the Arsenal Ship Program. Steve was very active with the Ships Structure Committee in developing R&D programs for ship structure and he is a member of the ASNE Journal Committee. Steve received a BS in Mechanical Engineering (Naval Architecture Option) from Virginia Polytechnic Institute in 1964. He is a member of the ASNE TAU BETA PI PI TAU SIGMA and PHI KAPPA PHI. William 1. Lind joined ABS in 1992 after ten years with Sparkman and Stephens Inc. He is currently ABS Amekas Manager of Engineering jm New Orleans and Cleveland. Both ofices conduct plan reviews for militavy commercial and private marine craft fm self-propelled vessels under 300 feet in length and bargus unlimited in length. As Vice-Chaimn ojthe Western Rivers Technical Committee Great Lakes Technical Committee and the Small Vessel Committee Bill participated in the writing of the 1997 ABS Guide for Building and Classing High Speed Craft and the 1997 ABS Rules for Building and Classing Steel Vessels Under 9OM. Bill received an MBA from Florida Atlantic University in 1995 a BS in Mechanical Engineering from New York Institute of Technology in 1986 and a BA in Histoy from Colgate University in 1976. He is Chaimn of SNAME HS-9 Composite Panel Testing & Fire Protection and a member of ASNE. John J. Turner is Senior Vice President of SYNTEK Technologies Inc. in Arlington Virginia. SYNTEK specializes in activities of a highly technical nature supporting both industry and government in domestic and international markets. He is a registered Professional Engineer

The defense Advanced research Project Agency (dArPA), in conjunction with the U.S. Navy, initiated a research program for the design and construction of a distinctive warship for the 21st century known as the Arsenal Ship. By using an innovative development and acquisition approach it was hoped to streamline the procurement process and reduce costs. In an environment where budgets are being cut, both industry and Government were challenged to develop, design, and produce the innovative ship and related mission systems to meet specific performance capabilities within strict affordability constraints. A key element of this innovative acquisition approach was a new certification scheme designed to replace the traditional test and evaluation (T&E) and acceptance process. The purpose of this paper is to describe the development of the certification plan during Phase LI of the Arsenal Ship program by the American Bureau of Shipping and the contending Shipyard teams, and to discuss the potential benefits of this alternative certification approach. Although the Arsenal Ship program was canceled late in 1997, insight derived from the exploration of new certification concepts could benefit future design and building programs.

关键词： Warships

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Low-frequency noise characteristics of self-aligned AlGaAs/GaAs HBTs with a noise corner frequency below 3 kHz

Low-frequency noise characteristics of self-aligned AlGaAs/G...

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Microwave, MTT-S International Symposium

作者： Jin-Ho Shin Jiyoung Kim Yujin Chung Joonwoo Lee Kyu Hwan Ahn Bumman Kim Department of E.E.E. and Microwave Application Research Center POSTECH South Korea Advanced Devices Group Devices and Materials Laboratory LG Corporate Institute of Technology Seoul South Korea Photonics Device Laboratory System IC R&D Laboratory Hyundai Electronics Industries Company Limited Icheon Gyeonggi South Korea

ISBN: (纸本)0780338146

We have investigated the surface recombination and its 1/f noise properties of AlGaAs/GaAs HBT's as a function of the emitter-base structure and the surface passivation condition. It is found that the surface recombination 1/f noise can be significantly reduced by the heterojunction launcher of the abrupt junction with 30% Al mole fraction emitter. The depleted AlGaAs ledge surface passivation further suppresses the surface recombination currents. Consequently, we have achieved a very low 1/f noise corner frequency of 2.8 kHz at the collector current density of 10 kA/cm/sup 2/. The dominant noise source of the HBT is not a surface recombination current, but a bulk current noise. This is the lowest 1/f noise corner frequency among the III-V compound semiconductor devices, and comparable to those of low-noise Si BJTs.

关键词： Low-frequency noise Gallium arsenide Semiconductor device noise radiative recombination Passivation Frequency Noise reduction Current density Heterojunction bipolar transistors III-V semiconductor materials

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New piezoelectric transformer converter for AC-adapter

New piezoelectric transformer converter for AC-adapter

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Annual IEEE Conference on Applied Power Electronics Conference and Exposition (APEC)

作者： T. Zaitsu Y. Fuda Y. Okabe T. Ninomiya S. Hamamura M. Katsuno Transmission Device Development Department 2nd Transmission Division Transmission Operations Unit NEC Corporation Limited Kawasaki Japan Department of Electrical and Electronics Systems Engineering Kyushu University Fukuoka Japan R&D center TOKIN Corporation Sendai Japan Device Technology Department Transmission and Terminals Division NEC Engineering Limited Kawasaki Japan

A new piezoelectric transformer (PT) converter which functions as an AC-adapter is proposed. The device's PT operates in longitudinal-vibration mode and features good isolation, incombustibility and compact size. The PT was implemented as a part of the new AC-adapter and a significant reduction in size was achieved as a result. Experimental evaluation of the new adapter confirms that good performance was successfully obtained in spite of the need to comply with strict safety and noise standards.

关键词： Power transformer insulation Safety National electric code Vibrations Application software Inverters Commercialization Power generation Magnetic materials research and development

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Influence of human engineering on manning levels and human performance on ships

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NAVAL ENGINEErS JOUrNAL 1997年第5期109卷 67-76页

作者： Anderson, dE Oberman, Fr Malone, TB Baker, CC David E. Anderson:has a bachelor of science degree in environmental engineering from Florida Technological University and a master's degree in environmental engineering from the University of Central Florida. He is a graduate of the Naval Sea Systems Command's Engineer-In-Training (EIT) Program. Mr. Anderson was instrumental in introducing the collective protection system (CPS) in the U.S. Navy developing the initial forward-fit package for the USS Gunston Hall and the engineering change proposal (ECP) for the USS Wasp. In 1990 he joined the Human Systems Integration (HSI) Division (SEA 55W5) where he was task leader for auxiliary ships. He is currently the HSI manager for the future technology variant of the SeaLift ship and the future carrier. Association of Scientists and Engineers 33rdAnnual Technical Symposium 26 April 1996. Fred R. Oberman:has B.A. and M.A. degrees from the University of Chicago and Loyola University (experimental psychology) and an M.S. degree in industrial engineering and operations research from Virginia Polytechnic Institute (VPI). He has more than 30 years experience in HSI management planning research analysis design and testing in government and private sector positions. He is currently responsible for NavSea HSI generic research and tool development efforts. He is responsible for Human Engineering Specifications and Standards (Commercial Hypertext) and is the NavSea 03D7 representative on HSI in Performance Specifications and for integration of HSI within Integrated Logistic Support (ILS). He has served as DoD HSI SubTAG chair and member of the Simulation and Modeling Test and Evaluation Display and Control Systems Human Computer Interaction Specifications and Standards and Systems Design Sub Tags as a member of the Society of Naval Architects and Marine Engineers (SNAME) Systems Safety Panel and a member of NATO RSG 14 on man-machine analysis. Thomas B. Malone: CHFEP received a Ph.D. in experimental psychology from Fordham University in 1964. He is president of Carlow

The objectives of Human Engineering (HE) are generally viewed as increasing human performance, reducing human error, enhancing personnel and equipment safety, and reducing training and related personnel costs. There are other benefits that are thoroughly consistent with the direction of the Navy of the future, chief among these is reduction of required numbers of personnel to operate and maintain Navy ships. The Naval research Advisory Committee (NrAC) report on Man-Machine technology in the Navy estimated that one of the benefits from increased application of man-machine technology to Navy ship design is personnel reduction as well as improving system availability, effectiveness, and safety The objective of this paper is to discuss aspects of the human engineering design of ships and systems that affect manning requirements, and impact human-performance and safety The paper will also discuss how the application of human engineering leads to improved performance, and crew safety, and reduced workload, all of which influence manning levels. Finally, the paper presents a discussion of tools and case studies of good human engineering design practices which reduce manning.

关键词： Human engineering

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Modification of field emitter array tip shape by focused ion-beam irradiation

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Journal of Vacuum Science & technology B: Microelectronics Processing and Phenomena 1996年第3期14卷 1973-1973页

作者： Takai, M. Kishimoto, T. Yamashita, M. Morimoto, H. Yura, S. Hosono, A. Okuda, S. Lipp, S. Frey, L. ryssel, H. Faculty of Engineering Science and Research Center for Extreme Materials Osaka University Toyonaka Osaka 560 Japan Advanced Technology R&D Center Mitsubishi Electric Corporation 1‐1 Tsukaguchi‐Honmachi 8 Amagasaki Hyogo 661 Japan Fraunhofer Institut für Integrierte Schaltungen Lehrstuhl für Elektronische Bauelemente Universität Erlangen Schottkystrasse 10 D‐91058 Erlangen Germany

Tip shapes of Si field emitter arrays, fabricated by a conventional dry etching process, have been modified by focused ion‐beam (FIB) irradiation to obtain a sharp cone shape. Flat‐topped Si tips could be sharpened by localized sputtering using FIBs for a short time. Tip shape inspections and repairs were also performed using a FIB system combined with an electron‐beam column to remove metal residues and melted emitters.

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Low Shear Viscosity of a dense Ionic Micellar Solution

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Physical review Letters 1996年第4期76卷 700-700页

作者： Ying-Chun Liu Eric Y. Sheu Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge Massachusetts 02139 Texaco R&D P.O. Box 509 Beacon New York 12508

We present a method for evaluating the low shear viscosity of a strongly interacting nonspherical micellar solution. The contribution from hydrodynamic interaction was calculated according to the Batchelor-Green equation with the effect of micellar shape and the hydration taken into account. The Brownian contribution was calculated by modifying the method of de Schepper, Smorenburg, and Cohen [Phys. rev. Lett. 70, 2178 (1993)] with the structure factor extracted from a small angle neutron scattering experiment. The low shear viscosity agrees with the experimental results for hydrated micellar volume fraction φm up to 0.4.

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device modeling in the frame of Project AdEQUAT

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MICrOELECTrONIC ENGINEErING 1996年第1期34卷 67-84页

作者： rudan, M Vecchi, MC VonSchwerin, A Schoenmaker, W deKeersgieter, A McCarthy, K Mathewson, A Klaassen, dBM Otten, JAM Jones, SK Metcalfe, JG Dipartimento di Elettronica Informatica e Sistemistica Università di Bologna Viale Risorgimento 2 40136 Bologna Italy Siemens AG Corp. R&D ZFE BT ACM31 Otto-Hahn-Ring 6 D-81739 München 83 Germany IMEC 75 Kapeldreef 3001 Leuven Belgium National Microelectronics Research Centre Cork Ireland Philips Research Laboratories Professor Holstlaan 4 5656 AA Eindhoven The Netherlands Faculty of Electrical Engineering Eindhoven University of Technology Den Dolech 2 5600 MB EindhovenThe Netherlands GEC-Marconi Materials Technology Caswell Towcester Northants NN12 8EQ United Kingdom

A number of activities recently carried out within Theme 4.2-device modeling-of Project AdEQUAT are selected and described here. Apart from illustrating the technical work in itself, the aim of the paper is also that ... 详细信息

关键词： device modeling 0.25 mu m CMOS technology

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Abstracts of Papers Presented at the Japan-Israel Workshop on Novel Approaches for Controlling Insect Pests and Plant diseases Binational Plant Protection Cooperation

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Phytoparasitica 1997年第4期25卷 345-366页

作者： I. Yamamoto I. Ishaaya A. r. Horowitz Shinzo Kagabu Akinori Hirashima E. Shaaya M. Kostjukovsky K. r. S. Ascher d. Veierov N. Aharonson E. Kleter Miriam Eliyahu Annie Fenigstein Yoel Sasson E. Gershburg d. Stockholm H. rivkin N. Zilberberg M. Gurevitz N. Chejanovsky Yechiel Shai Ehud Gazit M. Keller B. Sneh N. Strizhov Avital regev Szuszanna Koncz-Kaiman C. Koncz J. Schell Aviah Zilberstein Galina Gindin I. Barash B. raccah I. S. Ben-Ze’ev Itamar Glazer A. Navon Ephraim Cohen Satoshi Nakamura Takane Fujimori Ezra dunkelblum Moshe Kehat Tetsu Ando Miriam Altstein Orna Ben-Aziz Irit Schafler I. Seltzer C. Gilon Ada rafaeli Carina Gileadi K. Ohsawa Yael Heifetz Shalom W. Applebaum A. Shani I. Yamaguchi T. Motoyama T. Yoshimoto T. Fujita Yigal Cohen Alexander Baider Sonja Farkash Shlomit Klopman dvir Taler Shinkichi Tawata Baruch Sneh Y. Elad Abraham Sztejnberg S. droby E. Chalutz Yeheskel Antignus Moshe Lapidot Mitsuro Hyakumachi Uri Hanania Noa Furman Adi Avni Vivian Fridman Shai Morin Mohammad Zeidan Hanokh Czosnek Toshihiro Kajiwara Dept. of Agricultural Chemistry Tokyo University of Agriculture Tokyo Japan Dept. of Entomology ARO The Volcani Center Bet Dagan Israel Dept. of Chemistry Faculty of Education Gifu University Gifu Japan Dept. of Agricultural Chemistry Kyushu University Fukuoka Japan Dept. of Stored Products ARO The Volcani Center Bet Dagan Israel Inst. of Plant Protection ARO The Volcani Center Bet Dagan Israel R&D Division Makhteshim Chemical Works Be’er Sheva Casali Inst. of Applied Chemistry The Hebrew University of Jerusalem Jerusalem Israel Inst. of Plant Protection ARO The Volcani Center Bet Dagan Dept. of Botany Tel-Aviv University Tel Aviv Israel Dept. of Membrane Research and Biophysics The Weiztnann Institute of Science Rehovot Israel Dept. of Plant Sciences Tel-Aviv University Tel Aviv Israel Max Planck Institute for Plant Breeding Research Köln Germany Dept. of Botany Tel-Aviv University Tel Aviv Plant Protection and Inspection Services Ministry of Agriculture and Rural Development Bet Dagan Israel Dept. of Nematology ARO The Volcani Center Bet Dagan Israel Dept. of Entomology The Hebrew University of Jerusalem Faculty of Agricultural Food and Environmental Quality Sciences Rehovot Israel Japan International Research Center for Agricultural Sciences Ministry of Agriculture Forestry and Fisheries Tsukuba 305 Japan Plant Protection Research Laboratory Japan Tobacco Inc. Yokohama 227 Japan Graduate School of Bio-Applications and Systems Engineering (BASE) Tokyo University of Agriculture and Technology Koganei Tokyo 184 Japan Inst. of Plant Protection ARO The Volcani Center BetDagan Dept. of Organic Chemistry The Hebrew University of Jerusalem Jerusalem Israel Dept. of Stored Products ARO The Volcani Center BetDagan Israel NODAI Research Inst. Setagaya-ku Tokyo 156 Dept. of Chemistry Ben-Gurion University of the Negev Be’er Sheva Israel The Inst. of Physical and Chemical Research (RIKEN) Saitama 351-01 Japan Mitsui Toatsu Agricultural Ch

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Advanced integration technology for a highly scalable SOI drAM with SOC (Silicon-On-Capacitors)

Advanced integration technology for a highly scalable SOI DR...

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International Electron devices Meeting (IEdM)

作者： Il-Kwon Kim Woo-Tag Kang Joon-Hee Lee Sunil Yu Sang-Cheol Lee Kyehee Yeom Yun-Gi Kim duck-Hyung Lee Giho Cha Byoung Hun Lee Sang-In Lee Kyu-Charn Park Tae-Earn Shim Chang-Gyu Hwang Technology Development Center Samsung Electronics Company Limited Yongin si Kyunggi South Korea Process Development Team Semiconductor R&D Sector Samsung Electronics Company Limited Yongin si Kyunggi South Korea

ISBN: (纸本)0780333934

A fully planarized 16 Mb SOI drAM has been successfully fabricated featuring pattern-bonded SOI (PBSOI), CMP processes, STI (Shallow Trench Isolation) and the silicon-on-capacitor (SOC) structure with 0.3 um technology using i-line lithography. The floating body effects of cell and peripheral SOI transistors are suppressed by the LIF (Local Implantation post Field oxidation) and halo implantation. The fully planarized process with SOC structure is established for multi-gigabit drAM and embedded memory devices.

关键词： random access memory Silicon Isolation technology Boron Threshold voltage Contact resistance research and development Lithography Oxidation degradation

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A solid-phase epitaxy with clean surface formation using SiH4 and evaluation of SOI layer

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ELECTrONICS ANd COMMUNICATIONS IN JAPAN PArT II-ELECTrONICS 1996年第12期79卷 71-78页

作者： Kodama, M Funabashi, H Mitsushima, Y Taga, Y Toyota Central R&D Laboratories Inc. Nagakute Aichi-ken Japan 480-11 Received his B.S. and M.S. degrees in electronics from Gifu University in 1985 and 1987 respectively. He joined Toyota Central R&D Laboratories in 1987 and has been working in the field of LST process technology. Received his B.S. degree in electrical engineering from Nagoya Institute of Technology in 1982. He joined Toyota Central R&D Laboratories in 1982 and has been working in the field of sensor technology. Received his B.S. and Ph.D. degrees in nuclear engineering from Nagoya University in 1975 and 1980 respectively. He joined Sanyo Electric Co. in 1980 and in 1991 he transferred to Toyota Central R&D Laboratories where he has been engaged in research on LSI process technology. Received his B.S. and M.S. degrees in measurement engineering from Nagoya Institute of Technology in 1968 and 1970 respectively. In 1970 he joined Toyota Central R&D Laboratories where he has been engaged in research on the surface interface physics and development of thin film material. He is presently a principal research fellow at the Toyota Central R&D Laboratories.

We investigated a method of solid-phase epitaxy (SPE) using low-vacuum, low-pressure chemical vapor deposition (LPCVd) equipment without the load lock chamber that is usually used for the Si LSI process. This is a new method of clean surface formation in which the Si substrate is heated after seed formation in an atmosphere of SiH4 gas. Using this method, an L-SPE length of 4 mu m was obtained. The reason for the success of this method appears to be that the seed surface cleaned by HF dipping is preserved by the SiH4 gas. To evaluate the quality of the silicon-on-insulator (SOI) layer formed by this method, a MOSFET and a PN diode were experimentally produced. The MOSFET exhibited normal transistor action, which confirmed that the SOI layer had satisfactory quality without any problem in manufacturing the MOSFET. However, it was found that the n value of the forward direction current characteristic of the PN diode was 1.156 and that the SOI layer had more recombination centers than the Si substrate (n = 1.050). (C) 1997 Scripta Technica, Inc.

关键词： SOI MOSFET LPCVd SPE

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