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Microwave, MTT-S International Symposium

作者： M. Shimozawa K. Kawakami K. Itoh A. Iida O. Ishida Information Technology Research and Development Center Mitsubishi Electric Corporation Limited Kamakura Kanagawa Japan Mitsubishi Denki Kabushiki Kaisha Chiyoda-ku Tokyo JP Inf. Technol. R&D Center Mitsubishi Electr. Corp. Kanagawa Japan

A novel sub-harmonic pumping direct conversion receiver (SHP-dCr) employing antiparallel diode pair (APdP) is proposed for high instantaneous dynamic range receivers used in mobile communications. The proposed SHP-dCr can suppress even harmonic mixing products, such as second order intermodulation (IM2) and LO noise that interfere a desired baseband signal. Moreover, the design condition of load resistance is indicated by analytical and experimental approaches for improving diode mixer disadvantages of lower conversion gain and higher LO power. A developed L-band SHP-dCr without a low noise amplifier achieves NF of 18.5 dB, IP3 at input port of 3 dBm and IM2 is below -90 dB in the actual input range.

关键词： dynamic range Baseband rF signals diodes radio frequency Mobile communication Power dividers Noise figure Power amplifiers radiofrequency amplifiers

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Correlation between glass transition temperature and chain structure for randomly crosslinked high polymers

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Journal of Polymer Science 1996年第13期34卷

作者： Jozef Bicerano robert L. Sammler Craig J. Carriere Jerry T. Seitz The Dow Chemical Company Central Research and Development Computing and Information Technology Laboratory 1776 Building Midland Michigan 48674 Materials R&D Laboratory 1702 Building Midland Michigan 48674

The empirical form for the dependence, T g ( n ) ≅ T g (∞)·(1 + α/ n ), of the glass transition temperature T g on the average number n of repeat units between crosslinks, is generalized for randomly crosslinked high polymers. The new form, T g ( n ) ≅ T g (∞) · [1 + c /( n · N rot )], is based on a correlation study of data for 77 samples of 10 different sets of resins. The fitting parameter α is resolved into composition-dependent N rot and composition-independent c terms. N rot summarizes the average number of rotational degrees of freedom per repeat unit, and is estimated in a straightforward manner from the structure and mol fraction of each repeat unit. The value of c is found from data analysis to be 5 ± 2. The results of this work are consistent with expectations based on the entropy theory of glasses, and provide improved understanding and predictive ability for the properties of crosslinked polymers. © 1996 John Wiley & Sons, Inc.

关键词： glass transition temperature polymer repeat unit correlation structure rotational degrees of freedom topology copolymerization crosslinking

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Formation of copper interconnects by the reflow of sputtered copper films

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ELECTrONICS ANd COMMUNICATIONS IN JAPAN PArT II-ELECTrONICS 1996年第8期79卷 105-114页

作者： Abe, K Harada, Y Hashimoto, K Onoda, H Nonmember VLSI R & D Center Oki Electric Industry Co. Ltd. Hachioji Japan 193 Graduated from the Department of Electrical Engineering Hosei University in 1989 and joined Oki Electric Industry Co. Ltd. He is engaged in research and development of metal interconnection technology for VLSI circuits. He is a member of the Japanese Society of Applied Physics. Graduated from the Department of Applied Chemistry Waseda University in 1984 and joined Oki Electric Industry Co. Ltd. He is engaged in research and development of metal interconnection technology for VLSI circuits. He is a member of the Japanese Society of Applied Physics. Received his Master of Science degree in Applied Physics from Osaka City University in 1986. He joined Oki Electric Industry Co. Ltd. in 1986 and was assigned to the VLSI R & D Center. He is engaged in research and development of film formation technology for VLSI interconnection materials. He is a member of the Japanese Society of Applied Physics. Graduated in 1974 from the Chemistry Department of Tokyo University. He is engaged in research and development of VLSI thin-film formation technologies processing technologies such as annealing and device processing. He is a member of the Japanese Society of Applied Physics.

The formation of Cu interconnects using conventional sputtering and reflow processes has been studied. The use of W, Mo, and TiN underlayers makes it possible to fill grooves with Cu at reflow temperatures as low as 450 degrees C. There is a close relationship between filling characteristics and agglomeration. Cu films agglomerate more easily on W, Mo, and TiN underlayers than on TiW and Ta underlayers because of their low Cu wettability. It was found also that Cu agglomeration was affected drastically by underlayer surface roughness. By adding the CMP process to the conventional sputtering and reflow processes, Cu interconnects down to 0.6 mu m in width have been fabricated successfully. The resistivity of the interconnects is about 1.9 mu Omega . cm.

关键词： sputtering reflow Cu interconnects CMP

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A device simulation of the BBT effect in flash memory cells and implications for the development of high-reliability memory cells

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ELECTrONICS ANd COMMUNICATIONS IN JAPAN PArT II-ELECTrONICS 1996年第11期79卷 51-57页

作者： Hayashi, T Fukuda, K Ohno, M Nishi, K Kita, A VLSI R&D Center OKI Electric Industry Company Ltd. Hachioji-shi Japan 193 Graduated from the Science University of Tokyo Dept. of Applied Physics in 1986 and joined Oki Electric. Since then he has been engaged in research on the reliability of MOS transistors and silicon oxide films. Since 1994 he has been engaged in the development of flash memory. He is a member of the Applied Physics Society. Graduated from the University of Tokyo Dept. of Applied Physics in 1983 and joined Oki Electric in 1985. Since then he has been engaged in research on the semiconductor process and device simulation. In 1990 he participated in joint research at the Technical University of Aachen. He is a member of the Applied Physics Society. Graduated from the Tokyo University of Agriculture and Technology Dept. of Electrical Engineering in 1980 and completed an MS course in 1983. In 1986 he completed the doctoral course at Shizuoka University. He then joined Oki Electric where he has been engaged in research on ULSI processes. He is now a manager responsible for flash memory at the VLSI R&D Center. He holds a doctorate in engineering. He is a member of the Applied Physics Society. Graduated from the University of Tokyo Dept. of Applied Physics in 1973 and joined Oki Electric. He was engaged in the development of integrated circuit logic simulation technology and bipolar process technology and since 1980 he has been engaged in research on process/device simulation and modeling. Presently he is a senior manager at the VLSI R&D Center. In 1982–1984 he was a Visiting Scholar at MIT. He holds a doctorate in engineering. He is a member of the Applied Physics Society and a senior member of IEEE. Graduated from Tokyo Institute of Technology Dept. of Chemical Engineering in 1978 and completed the MS program in 1930. In that year he joined Oki Electric. Since then he has been engaged in CMOS process design for DRAM and flash memory. He is now a manager at the VLSI R&D Center. He is a member of the Applied Physics Society.

In order to analyze the BBT (band-to-band tunneling) phenomenon in flash memory cells by simulation, a new model is proposed, which improves on the BBT model by introducing the concept of ''average electric field.'' This model agrees well with the measured results in a wide drain N-concentration range. Using this model, the reliability of memory cells is analyzed. It is found that the difference of the amount of BBT generation does not directly affect the endurance characteristics but does affect the disturb characteristics. The same model can be used to analyze problem points of the present cells and to estimate the BBT current of next-generation devices accurately.

关键词： band-to-band tunneling flash memory simulation endurance characteristics

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OXIdATION PrOTECTION FOr 3d CArBON-CArBON COMPOSITES

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ACTA ASTrONAUTICA 1995年第1期35卷 35-41页

作者： HSU, SE WU, Hd WU, TM CHOU, ST WANG, KL CHEN, CI Materials R&D Center Chung Shan Institute of Science and Technology Lung-Tan Taiwan 32526 Republic of China

The main objective of this study is to produce an effective protection coating for 3d carbon/carbon composites (C/C) to prevent oxygen attacks at elevated temperatures. Silicon and zirconium base alloys were used to stack a multilayer coating in an array of elemental gradients. The oxidation rate was detected by an in situ measurement at various temperatures as well as by long-term isothermal oxidation at elevated temperatures up to 1650-degrees-C. A maximum oxidation rate was found at a medial temperature of around 800-degrees-C. The rate converged to zero at 1150-degrees-C and weight gain occurred at higher temperatures. The multilayer coating proved useful in encountering the severe oxidation circumstances for hundreds of hours without deterioration of the C/C substrate.

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INFLUENCE OF STACKING-SEQUENCE ON THE TrANSVErSE MATrIX CrACKING IN CONTINUOUS FIBEr CrOSSPLY LAMINATES

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JOUrNAL OF COMPOSITE materials 1995年第10期29卷 1337-1358页

作者： XU, LY R&D Division Si-Da Technology Development Centre Jinan Branch 113 JieFang Lu Jinan Shandong Province 250013 PR. China

The influence of stacking sequence to the transverse matrix crack was studied experimentally and analytically. Five crossply laminates of Gr/BMI and GL/BMI composites were tested. Stacking sequence was found to have a significant effect on the matrix crack growth in composite laminates, it is behaved by the thickness effect to the cracked 90 degrees plies. If the total volumes of the 0 degrees and 90 degrees plies are identical but the stacking sequences are designed to be different, the matrix crack growth processes are quite different. The 90 degrees layer with smaller thickness has the higher cracking loading, matrix crack growth rate and final saturation crack density. Although stacking sequence affects the damage material stare of the matrix crack, a final damage mechanics state may exist in the matrix crack growth for the laminates with the same total volumes of the 0 degrees and 90 degrees plies but with different stacking sequences, this damage state is characterized by the final residual laminate stiffness and seems to be independent of the laminate stacking sequence. This phenomenon can be accounted by a modified shear-lag model. Further study shows that the stiffness degradation of the cracked 90 degrees plies has a low boundary which is independent of the laminate layup and material.

关键词： MATrIX CrACKING STACKING SEQUENCE STIFFNESS rEdUCTION dAMAGE STATE

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Vanadium oxycarbide thin films prepared by conventional chemical vapour deposition from vanadium(III) acetylacetonate

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SUrFACE & COATINGS technology 1995年第1-3期76卷 244-249页

作者： ramirez, J Berroteran, I Department of Materials Technology Intevep SA R&D Centre of Venezuelan Oil Company P.O. Box 76343 Caracas 1070A Venezuela

Hard vanadium oxycarbide thin films were prepared by conventional atmospheric pressure chemical vapour deposition. As the precursor, vanadium (III) acetylacetonate was used, and low carbon steel and stainless steel were used as substrates. A reducing atmosphere of H-2 was chosen and heating was performed at a rate of 40 degrees C min(-1) with two isotherms of 1 h at 500 degrees C and 1000 degrees C. The mechanical properties of the coatings were evaluated by hardness measurements and scratch tests. during the first isotherm, surface activation and nucleation of the deposit occurred. with the formation of a non-homogeneous layer, which contained V2O5 and free carbon, as shown by X-ray photoelectron spectroscopy (XPS). Further increments modified the structure to crystalline oxycarbide as major phase. The addition of 1% CH4 to the reactive gas at 1000 degrees C markedly improved the adhesion between coating and substrate. Scanning electron microscopy and XPS showed that the oxygen concentration in the coating was reduced by increasing the reducing capacity of the reactive gas.

关键词： vanadium oxycarbide thin films chemical vapour deposition oxycarbide coatings

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EFFECT OF BrOMINATION OM EPdM CUrING BEHAVIOr ANd ITS TENSILE PrOPErTIES

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POLYMEr-PLASTICS technology ANd ENGINEErING 1995年第4期34卷 581-598页

作者： YOON, Jr TSUKAHArA, Y KOHJIYA, S Department of Materials Science Kyoto Institute of Technology Matsugasaki Sakyo-ku Kyoto 606 Japan Hankook Tire Mfg. Co. Ltd. Technical R&D Center Jang Dong Yusung-ku Tae Jeon Korea Institute for Chemical Research Kyoto University Uji Kyoto 611 Japan

Ethylene propylene diene rubber (EPdM) was brominated. The curing behavior and tensile properties of the brominated EPdM (BEPdM) were investigated using a typical sulfur curing formulation, The brominated EPdM was observed to cure with a shorter cure induction time than the unbrominated one, The activation energies (E(a)) of curing for EPdM and brominated EPdM were found to be approximately 145 kJ/mol and 58 kJ/mol, respectively. Analysis of curing behavior with individual curatives and stress-strain measurements indicates that these significant improvements could be attributed to the role of bromine as a more efficient crosslinking site, forming C-O-C crosslinks. In addition, the bromine also seems to increase the solubility of sulfur in the rubber, promoting sulfur crosslinks which are apparently not observed with the unbrominated EPdM, Consequently, the BEPdM displayed significantly higher tensile strength than the unbrominated one.

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High power density thermophotovoltaic energy conversion

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AIP Conference Proceedings 1995年第1期321卷 119-132页

作者： darryl L. Noreen Honghua du R&D Technologies Inc. Hoboken New Jersey 07030 Department of Materials Science and Engineering Stevens Institute of Technology Hoboken New Jersey 07030

r&d Technologies is developing thermophotovoltaic (TPV) technology based on the use of porous/fibrous ceramic broadband‐type emitter designs that utilize recuperative or regenerative techniques to improve thermal efficiency and power density. This paper describes preliminary estimates of what will be required to accomplish sufficient power density to develop a practical, commercially‐viable TPV generator. It addresses the needs for improved, thermal shock‐resistant, long‐life porous/fibrous ceramic emitters and provides information on the photocell technology required to achieve acceptable power density in broadband‐type (with selective filter) TPV systems. TPV combustors/systems operating at a temperature of 1500 °C with a broadband‐type emitter is proposed as a viable starting point for cost‐effective TPV conversion. Based on current projections for photocell cost, system power densities of 7.5–10 watts per square centimeter of emitter area will be required for TPV to become a commercially viable technology.

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Abstracts of papers presented at the 14th conference of the Weed Science Society of Israel Abstracts of papers presented at the international conference on controlled atmosphere and fumigation (CAF) in stored products Abstracts of papers presented at the joint international conference of FAOPMA — CEPA on pest control in the 21st century Abstracts of papers presented at the 2nd international Agro-Ecology Symposium on integrated pest management: from the drawing board to the market

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Phytoparasitica 1996年第3期24卷 199-265页

作者： E. Yogev M. Berson Y. Benyamini Y. Sheinboim T. Lev-ran A. Bahat Y. Barkai Y. Gatti M. Zaidan O. Barazani Y. Boshvize S. Graph U. Luchinsky T. Blumenfeld Y. Kleifeld G. Herzlinger H. Bucsbaum S. Golan T. Chilf r. Aly Y. Ohali A. Ovadia Y. Chachlon H. Yovel Y. Tesler G. Colodney A. Nir S. Zarka A. Tal B. rubin T. Yaacoby Y. Alon Y. Kedar Orit Ben-Zvi Assaraf O. Shainberg H. d. rabinowitch E. Tel-Or Y. Goldwasser d. M. Joel d. Plakhine V. Portnoy G. Tzuri N. Katzir dalia Losner-Goshen A. M. Mayer r. Jacobsohn Z. Tanaami H. Eisenberg Ziva Amsellem Z. Kernyi L. Hornok J. Gressel Adiva Shomer-Ilan Ela Nir daphna Michaeli V. Kampel A. Warshawsky M. Yogev M. Negbi J. Hershenhorn Y. Lavan T. Hilf M. Horowitz M. Cohen I. Hirsch A. Veneziani S. T. Conyers C. H. Bell Ana C. Sá-Fischer C. S. Adler Ch. reichmuth P. W. Flinn d. W. Hagstrum G. N. Mbata r. G. Winks Elisabeth A. Hyne M. Q. Chaudhry A. d. MacNicoll N. r. Price M. Schöller J. -F. dugast r. Plarre S. Navarro E. J. donahaye r. diaz Miriam rindner A. Azrieli P. Trematerra F. Fontana M. Mancini Ailsa d. Hocking Marta H. Taniwaki J. Lacey A. Hamer N. Magan N. Paster F. M. Caliboso d. G. Alvindia G. C. Sabio M. T. dela Cruz Okky Setyawati dharmaputra A. S. r. Putri M. Sidik Eleni Papademetriou A. Varnava C. Mouskos M. A. Malek B. Parveen K. A. dzisi W. O. Ellis Ana Maria Estevez Ljubica Galletti T. Fichet E. Oteiza L. A. Lizana M. X. Gonzalez B. Yakobson Y. Slavezky H. Ephrati El-H. Bartaly r. K. Kashyap M. Gupta W. L. Kashyap B. S. dahiya A. K. dash J. r. rangaswamy r. d. Shroff d. S. Jayas W. E. Muir N. d. G. White L Gaye Weller J. E. van S. Graver Wu-Kang Peng M. Bengston E. Alip C. reed J. G. Leesch G. F. Knapp G. F. russell L. B. Llewellin Ch. Ulrichs H. J. Banks P. C. Annis r. Allanson r. Tauscher K. Westphal S. Mohan M. Gopalan P. C. Sumdarababu V. V. Sree Narayanan Sabine Prozell G. Ziegleder B. Schartmann r. Matissek J. Kraus d. Gerard S. rogg W. raemann r. F. ryan Ya-Nan Wang r. T. Noyes P. Kenkel J. T. Criswell G. W. Cuperus C. J. Waterford C. P. Whittle L. Be Luxembourg Chemicals and Agriculture Ltd. Tel Aviv Israel Agrochemicals Dept. Milchan Bros. Ltd. Ramat Gan Israel Extension Service Ministry of Agriculture Zefat Mevo Hamma Ramat HaGolan Israel Dept. of Weed Science ARO Newe Ya’ar Research Center Haifa Israel Agrochemicals Department Milchan Bros. Ltd. Ramat Gan Israel Tarsis-Agrichem Tel Aviv Israel Weed Control Co. Ltd. Bet Dagan Israel Dept. of Field Crops Vegetables and Genetics The Hebrew University of Jerusalem Faculty of Agriculture Rehovot Israel Plant Protection and Inspection Services Ministry of Agriculture Bet Dagan 50250 Agan Chemical Manufacturers Ltd. Ashdod Israel Dept. of Field Crops Vegetables and Genetics Rehovot Dept. of Agricultural Botany The Hebrew University of Jerusalem Faculty of Agriculture Rehovot Israel Dept. of Weed Science ARO Newe Ya’ar Research Center Haifa Dept. of Botany The Hebrew University of Jerusalem Jerusalem Israel Dept. of Vegetable Crops ARO The Volcani Center Bet Dagan Israel Dept. of Plant Genetics Weizmann Institute of Science Rehovot Israel Inst. for Plant Science Agricultural Biotechnology Center Gödöllö Hungary Dept. of Botany Tel-Aviv University Tel Aviv Israel Dept. of Plant Genetics The Weizmann Institute of Science Rehovot Israel Dept. of Organic Chemistry The Weizmann Institute of Science Rehovot Israel Dept. of Ornamental Horticulture ARO The Volcani Center Bet Dagan Israel Weed Control Co. Ltd. Bet Dagan Chem-Nir Ltd. Kefar Shemaryahu Tiveon-Chem Co. Haifa Israel Central Science Laboratory Ministry of Agriculture Fisheries and Food Slough Berks UK Federal Biological Research Centre for Agriculture and Forestry Inst. for Stored Product Protection Berlin Germany USDA-ARS Grain Marketing and Production Research Center Manhattan USA School of Biological Sciences Abia State University Uturu Nigeria CSIRO Division of Entomology SCMC Nambour CSIRO Division of Entomology Canberra Australia DowElanco Europe Letcombe Laboratory L

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