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16th International Conference on Silicon Carbide and related Materials, ICSCrM 2015

作者： Yamada, Keiichi Senzaki, Junji Kojima, Kazutoshi Okumura, Hajime R&D Partnership for Future Power Electronics Technology 16-1 Onogawa TsukubaIbaraki305-8569 Japan Advanced Power Electronics Research Center National Institute of Advanced Industrial Science and Technology 1-1-1 Umezono TsukubaIbaraki305-8568 Japan

ISBN: (纸本)9783035710427

The new indicators, effective gate oxide thickness tc and effective gate electrode area d, and their combination are applied for a new analysis method of Fowler-Nordheim (F-N) tunneling characteristics in MOS capacitor having oxide thickness fluctuation. This method considering the conduction properties of F-N tunneling characteristics correlates its characteristics to the oxide reliability. These indicators quantified with the influence of the oxide thickness fluctuation can provide the net values of the electric field and the current density on the gate oxide. This new analysis method will lead to reducing the evaluation time for the reliability assessment. © 2016 Trans Tech Publications, Switzerland.

关键词： Electrodes

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developing technologies of SiC gas source growth method 16th

Developing technologies of SiC gas source growth method

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16th International Conference on Silicon Carbide and related Materials, ICSCrM 2015

作者： Kojima, Jun Tokuda, Yuichiro Makino, Emi Sugiyama, Naohiro Hoshino, Norihiro Kamata, Isaho Tsuchida, Hidekazu R&D Partnership for Future Power Electronics Technology Japan DENSO CORPORATION 500-1 Minamiyama Komenoki-cho Nisshin-shiAichi470-0111 Japan 2-6-1 Nagasaka Yokosuka-shiKanagawa240-0916 Japan 16-1 Onogawa Tsukuba-shiIbaraki305-8569 Japan

ISBN: (纸本)9783035710427

In order to diffuse the use of SiC, mass-production technologies of SiC wafers are needed. It is easy to be understood that high-speed and long-sized growth technologies are connected directly with mass-production technologies. The gas source growth method such as HT-CVd has the possibilities and the potential of the high-speed and long-sized growth. In this article, it was clarified that the high growth rate were achieved by the control of the source gas partial pressures and by the gas boundary layers. The average growth rate was 1mm/h on the 4 inch-diameter crystal, and the maximum growth rate reached 3.6 mm/h on the 12.5x25 mm tetragon by the above gas control. The crystal qualities of the gas source methods were also evaluated the equivalent level in comparison with the sublimation method. Concerning the 1mm/h-growth 3 inch crystal, the densities of TSds were kept in the 102 cm-2 levels from the seed to the upper-side of the ingot. Moreover, the ingot size increased year by year and a 4 inch x 43 mm sized ingot has been developed. © 2016 Trans Tech Publications, Switzerland.

关键词： Growth rate

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Characterization of interface state density from subthreshold slope of MOSFETs at low temperatures (≥ 10 K)

Characterization of interface state density from subthreshol...

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European Conference on Silicon Carbide and related Materials, ECSCrM 2014

作者： Yoshioka, Hironori Senzaki, Junji Shimozato, Atsushi Tanaka, Yasunori Okumura, Hajime R and D Partnership for Future Power Electronics Technology Tsukuba305-8569 Japan Tsukuba305-8568 Japan

ISBN: (纸本)9783038354789

We have evaluated interface state density (dIT) for EC−ET > 0.00 eV from the subthreshold slope deterioration of MOSFETs at low temperatures. We have compared two n-channel MOSFETs on the C- and a-faces with the gate oxide formed by pyrogenic oxidation followed by annealing in H2. The peak field-effect mobility (μFE,peak) for the C-face MOSFET was 57 cm2V-1s-1 at 300 K, which is lower than the half of 135 cm2V-1s-1 for the a-face MOSFET. We have shown that dIT very close to EC can well explain why μFE for C-face MOSFETs is lower than that for a-face MOSFETs. The value of dIT at 0.00 eV corresponding to the subthreshold slope at 11 K was 1.6×1014 cm-2eV-1 for the C-face MOSFET, which is more than the double of 6.4×1013 cm-2eV-1 for the a-face MOSFET. © (2015) Trans Tech Publications, Switzerland.

关键词： Silicon carbide

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3.3 kV-class 4H-SiC UMOSFET by double-trench with tilt angle ion implantation 16th

3.3 kV-class 4H-SiC UMOSFET by double-trench with tilt angle...

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16th International Conference on Silicon Carbide and related Materials, ICSCrM 2015

作者： Kobayashi, Yusuke Harada, Shinsuke Ishimori, Hiroshi Takasu, Shinji Kojima, Takahito Ariyoshi, Keiko Sometani, Mitsuru Senzaki, Junji Takei, Manabu Tanaka, Yasunori Okumura, Hajime R & D Partnership for Future Power Electronics Technology 2-9-5 Toranomon Minato-kuTokyo105-0001 Japan Fuji Electric Co. Ltd. 1-11-2 Osaki Shinagawa-kuTokyo141-0032 Japan Toshiba Corporation 1 Komukai Toshiba-cho Saiwai-ku KawasakiKanagawa212-8582 Japan National Institute of Advanced Industrial Science and Technology Tsukuba Central 2 1-1-1 Umezono TsukubaIbaraki305-8568 Japan

ISBN: (纸本)9783035710427

A 3.3 kV trench MOSFET with double-trench structure was demonstrated. The deep buried p-base regions were fabricated using tilt angle ion implantation into the sidewalls of the trench contacts. The distance between the trench gate and trench contact was determined through simulation, in order to optimize the trade-off between on-resistance (ronA) and the electrical field in the oxide (Eox). A tapered trench was located in the connective area between the edge termination and the active area, in order to maintain breakdown voltage. We achieved a ronA of 10.3 mcm2 and a breakdown voltage of 3843 V and the maximum Eox at breakdown voltage was estimated to be 3.2 MV/cm. © 2016 Trans Tech Publications, Switzerland.

关键词： Silicon carbide

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Evaluation of F-N tunneling emission current in MOS capacitor fabricated on step bunching

Evaluation of F-N tunneling emission current in MOS capacito...

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European Conference on Silicon Carbide and related Materials, ECSCrM 2014

作者： Yamada, Keiichi Ishiyama, Osamu Sako, Hideki Senzaki, Junji Kitabatake, Makoto R and D Partnership for Future Power Electronics Technology 16-1 Onogawa TsukubaIbaraki305-8569 Japan Advanced Power Electronics Research Center National Institute of Advanced Industrial Science and Technology 1-1-1 Umezono TsukubaIbaraki305-8568 Japan

ISBN: (纸本)9783038354789

This work reports on influence of step bunching of SiC epitaxial-wafer surface on Fowler-Nordheim (F-N) tunneling emission current of SiC-MOS capacitor. We have measured the effective barrier height (ΦB) of SiO2/SiC interface, and estimated deterioration of the effective ΦB by calculating the local tunneling emission currents. Step bunching causes fluctuations of the gate oxide thickness. The effective ΦB value can be successively derived using our proposed partitioned model in which constant ΦB value of flat surface is used. The fluctuation of the oxide film thickness results in the convergence of F-N tunneling emission currents at the thinner oxide in the MOS capacitor. © (2015) Trans Tech Publications, Switzerland.

关键词： Silicon carbide

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4H-SiC growth from Si-Cr-C solution under Al and N Co-doping conditions

4H-SiC growth from Si-Cr-C solution under Al and N Co-doping...

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European Conference on Silicon Carbide and related Materials, ECSCrM 2014

作者： Mitani, Takeshi Komatsu, Naoyoshi Takahashi, Tetsuo Kato, Tomohisa Ujihara, Toru Matsumoto, Yuji Kurashige, Kazuhisa Okumura, Hajime R and D Partnership for Future Power Electronics Technology TsukubaIbaraki305-8569 Japan National Institute of Advanced Industrial Science and Technology TsukubaIbaraki305-8569 Japan Nagoya University Chikusa NagoyaAichi464-8603 Japan Tohoku University Aoba SendaiMiyagi980-8579 Japan Hitachi Chemical Co. Ltd TsukubaIbaraki300-4247 Japan

ISBN: (纸本)9783038354789

We have investigated solution growth of 4H-SiC under various Al-N co-doping conditions. Both p-type and n-type 4H-SiC were successfully grown under Al-N co-doping conditions where we added Al to stabilize both growth surface morphology and polytype. The doping and electrical properties were investigated systematically. Interaction between Al and N in the incorporation process and electrical property under heavily co-doped conditions were discussed. © (2015) Trans Tech Publications, Switzerland.

关键词： Silicon carbide

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Influence of Cu/Ni(P) Metallized Si3N4 Ceramic Substrate in Bond reliability of power Components at 250 °C

Influence of Cu/Ni(P) Metallized Si3N4 Ceramic Substrate in ...

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CIPS 2014;8th International Conference on Integrated power electronics Systems

作者： Fengqun Lang Hiroshi Yamaguchi Hiroshi Nakagawa Hiroshi Sato R&D Partnership for Future Power Electronics Technology (FUPET)

ISBN: (纸本)9783800735785

Active metal bonded copper (AMC) on Si3N4 ceramic substrate was used to fabricate the high temperature resistant power components. The high temperature reliability of the substrate and its influence in bond reliability of the power components were investigated under isothermal storage conditions at 250 °C for up to 3000 h and thermal cycling conditions from -40 to 250 °C for up to 3000 cycles. during isothermal storage at 250 °C, the AMC substrate exhibited high reliability, characterized by very little copper (Cu) layer deformation, very low cracks growth rate and Cu oxidation rate of the Cu layer. As a result, the bond strength of the power components slowly decreased with storage time, from the original 83 MPa to ~60 MPa after 3000 h. Under thermal cycling conditions from -40 to 250 °C, no detachment of the Cu layer was observed even after the maximum 3000 cycles of the experiment. However, serious deformation of the Cu layer occurred and proceeded with number of the thermal cycles. In addition, the thermal stress led to significant increase of the surface roughness, rapid crack growth rate and high oxidation rate. The deformation of the Cu layer was the main cause responsible for the decrease of the bond strength under thermal cycling conditions. The shear strength decreased to 33 MPa after 3000 cycles.

关键词： energy component Thermal cycling Copper bond strength Surface roughness Oxidation rate Substrates

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Gate oxide reliability on trapezoid-shaped defects and obtuse triangular defects in 4H-SiC epitaxial wafers

Gate oxide reliability on trapezoid-shaped defects and obtus...

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作者： Ishiyama, Osamu Yamada, Keiichi Sako, Hideki Tamura, Kentaro Kitabatake, Makoto Senzaki, Junji Matsuhata, Hirofumi R and D Partnership for Future Power Electronics Technology Tsukuba Ibaraki 305-8568 Japan National Institute of Advanced Industrial Science and Technology Tsukuba Ibaraki 305-8568 Japan

The reliability of the gate oxide on large-area surface defects (trapezoid-shaped and obtuse triangular defects) in 4H-SiC epitaxial wafers is discussed. Time-dependent dielectric breakdown measurements revealed that a reduction in charge-to-breakdown (Qbd) occurred at a MOS capacitor including the downstream line of those defects. The deterioration of Q bd was at the same level in trapezoid-shaped defects and obtuse triangular defects. A cross-sectional transmission electron microscope (TEM) image and the simulation of the electric field distribution for the MOS structure indicated that the local fluctuation of the oxide thickness and/or the roughness of the interface on the downstream lines caused the degradation of the reliability of the MOS capacitors. © 2014 The Japan Society of Applied Physics.

关键词： Silicon carbide

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4H-SiC Bulk Growth Using High-Temperature Gas Source Method

4H-SiC Bulk Growth Using High-Temperature Gas Source Method

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15th International Conference on Silicon Carbide and related Materials (ICSCrM)

作者： Tokuda, Y. Kojima, J. Hara, K. Tsuchida, H. Onda, S. R and D Partnership for Future Power Electronics Technology Japan Denso Corporation Komenoki-cho Nisshin-shi Aichi 470-0111 500-1 Minamiyama Japan Central Research Institute of Electric Power Industry (CRIEPI) Yokosuka-shi Kanagawa 240-0916 2-6-1 Nagasaka Japan

ISBN: (纸本)9783038350101

Our latest results of SiC bulk growth by High-Temperature Gas Source Method are given in this paper. Based on Mullins-Sekerka instability, optimal growth conditions to preclude dendrite crystals, which are one of the pending issues for high-speed bulk growth, was studied. First, the simulation studies showed that high temperature gradient in a growing crystal is required for high-speed bulk growth without dendrite crystals. Second, high-speed bulk growth was demonstrated under high temperature gradient.

关键词： Bulk Growth High Growth rate High-Speed Growth HTCVd dendrite Crystal

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Correlation of Stress in Silicon Carbide Crystal and Frequency Shift in Micro-raman Spectroscopy

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MrS Online Proceedings Library 2014年第1期1693卷 107-112页

作者： Sugiyama, N. Yamada, M. Urakami, Y. Kobayashi, M. Masuda, T. Nishikawa, K. Hirose, F. Onda, S. R&D Partnership for Future Power Electronics Technology Tokyo Japan DENSO CORP. Aichi Japan SHOWA DENKO K.K. Shiga Japan Toyota Central R&D Labs. Inc. Aichi Japan

The correlation of stress in Silicon Carbide (SiC) crystal and frequency shift in micro- raman spectroscopy was determined by an experimental method. We applied uniaxial stress to 4H- and 6H-SiC single crystal square bar specimen shaped with (0001) and (11–20) faces by four point bending test, under measuring the frequency shift in micro-raman spectroscopy. The results revealed that the linearity coefficients between stress and raman shift were −1.96 cm−1/GPa for FTO(2/4)E2 on 4H-SiC (0001) face, −2.08 cm-1/GPa for FTO(2/4)E2 on 4H-SiC (11-20) face and −2.70 cm−1/GPa for FTO(2/6)E2 on 6H-SiC (0001) face. determination of these coefficients has made it possible to evaluate the residual stress in SiC crystal quantitatively by micro-raman spectroscopy. We evaluated the residual stress in SiC substrate that was grown in our laboratory by utilizing the results obtained in this study. The result of estimation indicated that the SiC substrate with a diameter of 6 inch remained residual stress as low as ±15 MPa.

关键词： crystal growth raman spectroscopy defects

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