Homoepitaxial 4H-SiC film growth has been carried out at temperatures as low as 1000°C on 4H-SiC of Si-face and C-face by microwave plasma chemical vapordeposition method. The extent of step-bunching of those fi...
Homoepitaxial 4H-SiC film growth has been carried out at temperatures as low as 1000°C on 4H-SiC of Si-face and C-face by microwave plasma chemical vapordeposition method. The extent of step-bunching of those films grown on C-face was low in comparison with that on Si-face, although large and irregular shaped step-bunching was occurred in both films grown on Si-face and C-face. For the first step to application for the electrical devices, the electrical properties of the μPCVd grown films was characterized by fabricating simple pn-junction structure. The obtained SiC films indicated n-type conductivity and the amount of backgrounddonor impurities of the films grown on C-face substrates were lower by one order than that on Si-face.
Growth and characterization of p-type 4H-SiC epitaxial layers grown on (11-20) substrates are reported. P-type 4H-SiC epilayers with smooth surface morphology have been grown on (11-20) substrates by low-pressure, hot...
Growth and characterization of p-type 4H-SiC epitaxial layers grown on (11-20) substrates are reported. P-type 4H-SiC epilayers with smooth surface morphology have been grown on (11-20) substrates by low-pressure, hot-wall type CVd with SiH4–C3H8–H2–TMA system. The doping concentration can be controlled in the range from about 1×1016cm−3 to 1×1019cm−3. Anisotropy of the crystalline quality is observed by x-ray diffraction measurement. P-type epilayers, in which near band-gap emissions are dominated andd-A pair peak is not observed, are obtained. Hole mobility of (11-20) epilayers is smaller than that of (0001) epilayers probably due to the lack of crystalline quality compared to (0001) epilayers. The results of both low-temperature photoluminescence and the temperature dependence of Hall effect measurements indicate that the boron concentration as undoped impurity in (11-20) epilayer is lower than that of (0001) epilayer. This may be caused by the smaller incorporation efficiency of boron into (11-20) epilayer than that of (0001) epilayer.
We report the rf-MBE growth and characterizations of AlGaN/GaN heterostructures and their HEMTs on vicinal sapphire (0001) substrates. Vicinal angle dependences of the property (surface morphologies and 2dEG mobility)...
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We characterized GaN crystals with various dislocation densities by micro-raman spectroscopy. defects and Strain for the GaN layer were examined through measurements of the raman shift and the width of the TO phonon b...
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A deterioration mechanism of dC characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated around hollow cores that extend from micropipes in SiC substrates was studied. Various sizes of hollow...
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Metal-insulator-semiconductor (MIS) heterostructure field-effect transistors (HFETs) fabricated with HfAlO as a gate insulator with high dielectric permittivity are demonstrated to achieve true enhancement-mode operat...
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GaN/AlN super-lattice structures (SLs) grown on the vicinal sapphire (0001) substrates by rf-MBE are investigated using various characterization techniques. The satellite Xrddiffraction peaks originating from the SLs...
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