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第五届宝钢学术年会

作者： dU Shan Wen HO Chung Ken TUNG Che Hsiung Ironmaking Process Development Section Ironmaking & Steelmaking R&D DepartmentChina Steel CorporationKaohsiungTaiwanChina Blast Furnace Plant IIronmaking DepartmentChina Steel CorporationKaohsiungTaiwanChina

For the reduction of the operation cost,pulverised coal injection ( PCI) has become a standard practice in most steelworks *** aid improving the practical performance of blast furnace,coal combustion behaviours in the raceway of the blast furnace with different lance configurations and oxygen enrichment patterns were simulated in this *** lance configurations including single lance,double air- cooled coaxial lance and oxy-coal lance,in which the enriched oxygen flowed through the annulus of the lance as cooling gas,were *** the calculated temperature contours,early ignition is found when the double lance is operated due to better dispersion of coal particles in hot ***,the coal combustion efficiency in the raceway could be *** the other hand,the ignition position for the oxy-coal lance injection is shifted away from the tuyere exit as a result of cooling effect by the enriched *** indicated by the calculated pressure drop within the combustion region,late ignition provides an advantage in lowering the pressure resistance across the ***,the coal combustion efficiency for the oxy-coal lance injection is not affected since the coal plume is surrounded by the enriched oxygen,which could intensify the combustion as long as the reactions are trigged in the raceway.

关键词： blast furnace pulverised coal injection injection lance configuration

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Experimental Measurements of drop Size distributions in 30 mm diameter Annular Centrifugal Contactor with 30% TBP-Nitric Acid Biphasic System

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International Journal of Nuclear Energy 2013年第1期2013卷

作者： Shekhar Kumar U. Kamachi Mudali Process Development and Equipment Section Reprocessing R&D Division Reprocessing Group Indira Gandhi Centre for Atomic Research Kalpakkam 603102 Indiaigcar.gov.in

For design and development of liquid-liquid extraction systems, it is essential to have an accurate estimation of hydrodynamic and mass transfer characteristics of the employed contactor. In the present study, experimental evaluations consisted primarily of determining the maximum solution throughput that could be processed without cross-phase contamination at a given rotor speed, O/A flow ratio, and organic-aqueous solution pair in a 30 mm bowl diameter centrifugal contactor. In addition, analysis included experimental drop size determinations as well as holdup determination. The experimental drop size distributions are expected to be helpful for modeling work.

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Effects of CVd-W process on electrical properties in sub 2× nm flash devices

Effects of CVD-W process on electrical properties in sub 2×...

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IEEE International Conference on Interconnect Technology

作者： Hauk Han Changwon Lee Hyunseok Lim Myungbum Lee Process Development Team Semiconductor R&D center Hwasung Korea

The physical and electrical properties of chemical vapor deposition (CVd) tungsten (W) are evaluated in terms of W nucleation layer (SiH 4 and B 2 H 6 reduction). Moreover effects of W nucleation layer on contact resistance (rc) for sub 2× nm device are also studied. The results show that electrical properties of W thin films are varied with nucleation layers. Our results reveal that W reductions gases determine the grain sizes of W films which influence both electrical and surface properties of W films. It also has been investigated that effect of boron (B) atoms in B 2 H 6 reduction W layer on P + rc. Out-diffused B atoms from P + junction into silicide layer during post thermal process are compensated by B of B 2 H 6 reduction W layer, which result in no degradation of P + rc despite of dopants loss at the contact interfaces. We reveal that tungsten nucleation layers are correlated with physical and electrical properties of W films and device performance.

关键词： Films Conductivity Grain size Heat treatment Atomic layer deposition Silicon Contact resistance

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Modeling of Hydrodynamics in a 25mmϕPulsed disk and doughnut Column

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International Scholarly research Notices 2013年第1期2013卷

作者： rajnish Kumar d. Sivakumar Shekhar Kumar U. Kamachi Mudali Atomic Energy Regulatory Board Mumbai 400094 Indiaaerb.gov.in Process Development and Equipment Section Reprocessing R&D Division Indira Gandhi Centre for Atomic Research Kalpakkam 603102 Indiaernet.in

The hydrodynamic parameters, namely, dispersed phase holdup and flooding throughput, have been investigated in 25 mm diameter pulsed disk and doughnut column (PddC), in no mass transfer conditions. In this work, using existing correlations on plate pulsed columns, the dispersed phase holdup and the flooding throughput are empirically modelled well using the slip velocity concept. A good agreement is observed between experimental values and predicted values obtained from empirical correlation. The experimental data for dispersed phase holdup and flooding throughput has been modelled using the Van delden model to describe the hydrodynamics characteristics of a PddC and necessary adjustable parameters for drop size distribution and dispersed phase holdup are updated for 30% TBP-nitric acid system. The model parameters were estimated by minimizing the absolute error between experimental and theoretical values of flooding throughput and holdup data. It was found that the measured values and observed trends could be described accurately using this model after fitting holdup and flooding data. The error between the experimental and theoretical values of flooding throughput and holdup was found to be less than 10%.

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Successful recovery of moisture-induced TddB degradation for Cu/ULK(k=2.5) BEOL interconnect

Successful recovery of moisture-induced TDDB degradation for...

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IEEE International Conference on Interconnect Technology

作者： Sang Hoon Ahn Tae-Soo Kim Viet Ha Nguyen OkHee Park KyuHee Han Jang-Hee Lee JongMyeong Lee Gilheyun Choi Ho-Kyu Kang Chilhee Chung Process Development Team Semiconductor R&D center Samsung Electronics Hwasung Gyeonggi-Do Korea

Cu/ULK(k=2.5) dual damascene back end of line(BEOL) dielectric degradation was studied with respect to post Cu CMP delay prior to dielectric diffusion barrier deposition. The threshold of the delay time was observed beyond which line-to-line leakage current increased rapidly while the dielectric breakdown voltage decreased. This air exposure-dependent degradation was attributed to moisture absorption by damaged ULK during integration, and caused premature TddB (time-dependent dielectric breakdown) failure. It was found that combination of moisture removal by damage-free UV and mild plasma treatment was able to restore dielectric breakdown voltage as well as TddB time to failure even well past the threshold of delay time.

关键词： Plasmas delay Moisture Leakage current degradation dielectric breakdown dielectrics

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decarburization of ferrochrome and high alloy steels with optimized gas and slag phases towards improved Cr retention

Decarburization of ferrochrome and high alloy steels with op...

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Ninth International Conference on Molten Slags,Fluxes and Salts(MOLTEN12)

作者： Mselly M.NZOTTA Seshadri SEETHArAMAN Research & Development(R&D) Process Development(Metallurgy)Uddeholms ABHagforsSweden. Division of Materials Process Science Royal Institute of TechnologyStockholmSweden.

Chromium is a high value metal and the retention of the same during the refining of high carbon ferrochrome(HCFeCr) as well as high alloy steel has significant economic and environmental impacts. The loss of chromium ... 详细信息

关键词： CO2 Cr retention partial pressure decarburizer temperature control

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A Study On the removal Method of Si residue during Si Wet Etch

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ECS Meeting Abstracts 2013年第30期MA2013-02卷

作者： Kihyung Ko Hayoung Jeon Myunggeun Song Boun Yoon Chilgi Lee Taesung Kim Samsung Electronics Co. Process Development Team Semiconductor R&D Center Samsung Electronics Co School of Information and Communication Engineering Sungkyunkwan University SKKU Advanced Institute of Nanotechnology Sungkyunkwan University Department of Mechanical Engineering Sungkunkwan University Sungkunkwan University

Abstract not Available.

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Applications of site-specific scanning spreading resistance microscopy (SSrM) to failure analysis of production lines

Applications of site-specific scanning spreading resistance ...

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International Workshop on Junction Technology

作者： Youhei Hayase Keiryo Hara Shinsuke Ogata Li Zhang Haruko Akutsu Michio Kurihara Kenji Norimatsu Shinji Nagamine Quality Assurance Dept. Corporate R&D Center Device & Process Development Center Quality Assurance Dept. Toshiba Corporation Oita Japan

Much attention has been paid to the site-specific scanning spreading resistance microscopy (SSrM) for visualizing impurity-diffusion layers because of its capability of failure analysis as well as analyzing scaled LSI devices. We report applications of the site-specific SSrM to failure analysis in LSI production lines for the first time. SSrM is shown to be capable of observing no implantation areas with high spatial resolution by combining with defect localization techniques. The combination of the site-specific SSrM with multiple failure analysis techniques in addition to design and process information has been demonstrated to be a powerful tool to find root causes in a short period.

关键词： Companies Abstracts Electrodes Nanoscale devices Metals

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A Study on the removal Method of Si residue during Si Wet Etching

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ECS Transactions 2013年第6期58卷

作者： Kihyung Ko Hayoung Jeon Myunggeun Song Jeongnam Han Boun Yoon Siyoung Choi Hokyu Kang Chilgi Lee Taesung Kim Samsung Electronics Co. Process Development Team Semiconductor R&D Center Samsung Electronics Co Samsung Electronics Co. SAMSUNG ELECTRONICS Co. Ltd. School of Information and Communication Engineering Sungkyunkwan University Sungkyunkwan University Department of Mechanical Engineering Sungkunkwan University Sungkunkwan University

In this paper, problems that can occur during the poly-Si wet etch in the semiconductor process are used and methods to solve these problems are introduced. In order to prevent the substrate from being damaged, we generally use a wet etching process that uses alkali solutions rather than dry etching process. If poly si residues remain after etch process in this critical step, it bring about a huge impact on the wafer yield.

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Novel flowable CVd process technology for sub-20nm interlayer dielectrics

Novel flowable CVD process technology for sub-20nm interlaye...

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IEEE International Conference on Interconnect Technology

作者： Honggun Kim Seungheon Lee Jun-Won Lee ByeongJu Bae YongSoon Choi Young-Ho Koh Hayoung Yi Eunkee Hong Mansug Kang Seok Woo Nam Ho-Kyu Kang Chilhee Chung Jinhyung Park Namjin Cho Seungmoo Lee Process Development Team Semiconductor R&D Center Hwasung-City Gyeonggi-Do R. O. KOREA Thin Film Team Manufacturing Center Hwasung-City Gyeonggi-Do R. O. KOREA

Flowable CVd (Chemical Vapor deposition) process having merits in terms of both superior gap-fill performance of SOd (Spin-on dielectric) and process stability of CVd was introduced for the interlayer dielectric (ILd) in sub-20nm devices based on new concept and precursor. remote plasma during low temperature deposition and ozone treatment was adopted to stabilize the film. We also developed a novel Flowable CVd process which does not oxidize Si or electrode, resulted in removal of Si 3 N 4 stopper layer as an oxidation or diffusion barrier. After the application of Flowable CVd to 20nm drAM ILd, we could reduce not only loading capacitance of Bit-line by 15% but also enhance comparable productivity. Through the successful development of sub-20nm drAM ILd Gap-fill process, Flowable CVd was successful demonstrated as a promising candidate for mass production-worthy ILd in sub-20nm next generation devices.

关键词： Films Plasma temperature random access memory dielectrics Capacitance Silicon

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