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Symposium on VLSI Technology

作者： Jaehoon Jang Han-Soo Kim Wonseok Cho Hoosung Cho Jinho Kim Sun Il Shim Younggoan Jae-Hun Jeong Byoung-Keun Son dong Woo Kim Kihyun Jae-Joo Shim Jin Soo Lim Kyoung-Hoon Kim Su Youn Yi Ju-Young Lim dewill Chung Hui-Chang Moon Sungmin Hwang Jong-Wook Lee Yong-Hoon Son U-In Chung Won-Seong Lee Samsung Electronics Co. Ltd Giheung-Gu Yongin-City Gyeonggi-Do Korea Memory Research and Development Center Memory Division Samsung Electronics Company Limited Yongin si Gyeonggi South Korea Advanced Technology Development Team 2&Process Development Team Memory R&D Center

Vertical NANd flash memory cell array by TCAT (terabit cell array transistor) technology is proposed. damascened metal gate SONOS type cell in the vertical NANd flash string is realized by a unique dasiagate replacementpsila process. Also, conventional bulk erase operation of the cell is successfully demonstrated. All advantages of TCAT flash is achieved without any sacrifice of bit cost scalability.

关键词： SONOS devices Plugs Costs Etching Transistors Scalability Nonhomogeneous media dielectric substrates Sun Moon

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Semiconductor patterning technologies for nano devices

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CUrrENT APPLIEd PHYSICS 2008年第6期8卷 656-658页

作者： Kang, C. J. Park, S. C. [a]Process Development Team R&D Center Semiconductor Samsung Electronics Co. Ltd. Republic of Korea

In the era of nano devices, patterning technology encounters many challenges, which arise from not only lithography but also plasma etching. Water-immersion lithography (193 nm) is clearly within sight and many lithography technologies, including extreme ultra-violet (EUV) and other methods, are being developed as the next generation lithography technologies. For nano device etching, introduction of very thin photoresist and more complex device structure requires subtle improvement of etching. Also, the adoption of new materials such as high-k dielectric, metal gate, and phase change materials require more improvement in the view point of profile and selectivity. Finally, since the process window is getting narrower, control and monitoring technologies such as advanced process control (APC) and advanced equipment control (AEC) are strongly required. (C) 2007 Elsevier B.V. All rights reserved.

关键词： patterning nano device lithography etching APC AEC

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Green Chemistry Articles of Interest to the Pharmaceutical Industry

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Organic process research & development 2009年第3期13卷 397-408页

作者： Ian Andrews Jian Cui Jimmy daSilva Leo dudin Peter dunn John Hayler Bill Hinkley david Hughes Bernard Kaptein Stanley Kolis Kurt Lorenz Suju Mathew Thomas rammeloo Lijun Wang Andrew Wells Timothy White Chaoyu Xie Fuyao Zhang GlaxoSmithKline Stevenage Herts U.K. Schering-Plough Union New Jersey U.S.A. Schering-Plough Union New Jersey U.S.A. GlaxoSmithKline Leigh Nr. Tonbridge Kent U.K. Pfizer Global Research and Development Ramsgate Road Sandwich U.K. GlaxoSmithKline Leigh Nr. Tonbridge Kent U.K. E-mail: GlaxoSmithKline Research Triangle Park North Carolina U.S.A. Merck and Co. Inc. Rahway New Jersey U.S.A. DSM Pharmaceutical Products Innovative Synthesis & Catalysis Geleen The Netherlands. Eli Lilly Indianapolis Indiana U.S.A. Eli Lilly Dunderrow Kinsale County Cork Ireland. E-mail: Pfizer Global Research and Development Ramsgate Road Sandwich U.K. Johnson&Johnson Pharmaceutical Research & Development Turnhoutseweg 30 B-2340 Beerse Belgium. Schering-Plough Union New Jersey U.S.A. Global Process R&D AstraZeneca Leicestershire U.K. Eli Lilly Indianapolis Indiana U.S.A. Eli Lilly Indianapolis Indiana U.S.A. Eli Lilly Indianapolis Indiana U.S.A

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recombinant Human Coagulation Factor IX Expressed in HEK293 Cells: Influence of Serin Phosphorylation and Tyrosine Sulfation on Pharmacokinetic Properties in FIX-Knock-out Mice

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Blood 2008年第11期112卷 4098-4098页

作者： Ernst Boehm Michael dockal Meinhard Hasslacher Artur Mitterer Eva M Muchitsch Manfred reiter Friedrich Scheiflinger R&D Discovery Research Baxter BioScience Vienna Austria R&D Discovery Research Baxter BioScience Orth/Donau Austria R&D Process Development Baxter BioScience Orth/Donau Austria R&D Pre-Clinical Baxter BioScience Vienna Austria

recombinant factor IX (rFIX) expressed in Chinese hamster ovary (CHO) cells has been shown to be safe and effective in clinical studies, but differs in pharmacokinetics from plasma-derived FIX (pdFIX). In clinical studies, CHO-derived rFIX had a 30–50 % lower in-vivo recovery when compared to pdFIX, whereas mean residence time and terminal half-life did not differ between preparations. Although rFIX shows high similarity to pdFIX in structure and function, differences in glycosylation and gamma-carboxylation degree can be detected. Moreover, although experimental proof has yet to be published, the lower degree of phosphorylation of amino acid serine 155, and the lower degree of sulfation of tyrosine 158 have been hypothesized to be causative for the lower in-vivo recovery of rFIX. These two modifications occur at less than 20 % for the tyrosine-sulfation and at less than 1 % for the serine phosphorylation in rFIX, whereas pdFIX has both modifications to more than 90 % completed. We identified human HEK293 cells to perform rFIX phosphorylation and sulfation to a higher extent than CHO cells. A rFIX-producing cell line derived from HEK293 cells was generated by stable transfection, and was adapted to suspension culture conditions to allow lab-scale fermentation. rFIX was produced and purified from a single fermentation run using two different down-stream process schemes: the first was able to enrich high-phosphorylated and -sulfated rFIX; the second to purify total rFIX from the supernatant at high yield. For pharmacokinetic comparison, these HEK293 materials, CHO-derived rFIX, and a pdFIX preparation were formulated in the same buffer. determination of phosphorylation and sulfation by mass spectrometry showed a phosphorylation and sulfation degree of 50 % plus a 20 % single modification (phosphorylation or sulfation) for the HEK293-material purified by the modification enrichment method versus 15 % for both modifications plus a 15 % single modification for the materi

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New Smelting Method development (Ca Cleaner Technology) 11

New Smelting Method Development (Ca Cleaner Technology)

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11th World Conference on Titanium, Ti-2007

作者： Yamaguchi, Makoto Ogasawara, Tadashi Ichihashi, Hiroyuki New Process Development Group R&D Department Sumitomo Titanium Corporation 1 Higashi-hamacho Hyogo Amagasaki City660-8533 Japan

ISBN: (纸本)9784889034066

The Japan Titanium Society initiated the development of a new smelting method in an effort to achieve low-cost production of titanium sponges in Japan. With a view to developing and commercializing a new smelting method, a four-year joint project was started in 2005 by Sumitomo Titanium Corporation and Toho Titanium Co., Ltd. with a government subsidy provided by the Ministry of Economy, Trade and Industry. The proposed new smelting process consists of two parts;One step for reducing titanium tetrachloride (TiCl4) to produce titanium, which is then formed into titanium ingots, and the second step for electrolyzing the by-products derived from the process for recycling. Sumitomo Titanium Corporation is responsible for development of the reduction and melting stages as integral parts of the new method. The current development work has produced some interesting phenomena regarding calcium treatment in molten calcium chloride and these new findings are introduce in this report. © Ti-2007 - Proceedings of the 11th World Conference on Titanium. All rights reserved.

关键词： Calcium chloride

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Hot-spot detection and correction using full-chip based process window analysis

Hot-spot detection and correction using full-chip based proc...

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International Conference on Microprocesses and Nanotechnology

作者： Sang-Wook Kim Sung-Soo Suh Young-Chang Kim Suk-Joo Lee Jung-Hyeon Lee Chang-Jin Kang Joo-Tae Moon Process Development Team Semiconductor R&D center Samsung Electronics Company Limited Hwasung Gyeonggi South Korea

In this paper, key process factors are computed during OPC for each fragment segments to perform a full-chip analysis of hot spot and removal of hot spot via process factor cost driven auto-correction or provide design guide for design for patterning (dFP) using a commercial OPC tool. Exposure latitude and dose sensitivity value represent image log slope (ILS) while dOF represents critical dimension variation at a defocused condition.

关键词： Moon research and development Postal services Focusing Error correction Image segmentation Performance analysis Costs Computational modeling Error analysis

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2-stack 1d-1r Cross-point Structure with Oxide diodes as Switch Elements for High density resistance rAM Applications

2-stack 1D-1R Cross-point Structure with Oxide Diodes as Swi...

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2007 IEEE International Electron devices Meeting (IEdM 2007), vol.2

作者： Myoung-Jae Lee Youngsoo Park Bo-Soo Kang Seung-Eon Ahn Changbum Lee Kihwan Kim Wenxu. Xianyu G. Stefanovich Jung-Hyun Lee Seok-Jae Chung Yeon-Hee Kim Chang-Soo Lee Jong-Bong Park In-Gyu Baek In-Kyeong Yoo Samsung Advanced Institute of Technology Semiconductor Device Laboratory Gyeonggi-Do Korea Nano Fabrication Technology Center Samsung Advanced Institute of Technology Gyeonggi-Do Korea Analytical Engineering Center Samsuna Advanced Institute of Technology Gyeonggi-Do Korea Advanced Process Development Team Semiconductor R&D Center Gyeonggi-Do Korea

We have successfully integrated a 2-stack 8×8 array 1d-1r (one diode-one resistor) structure with 0.5μm×0.5μm cells in order to demonstrate the feasibility of high density stacked rrAM. p-CuO{sub}X/n-InZnO{sub}X heterojunction thin film was used for the first time as a oxide diode which shows increased current density of two orders over our previous p-NiO{sub}x/n-TiO{sub}x oxide diode. And Ti-doped NiO was used for the storage node. No limitation to the number of stacks has been observed from our results. Cell and device properties of our cross-point structure 8×8 array are reported. In addition, all fabrication processes were done at room temperature without other dedicated facilities or processes allowing for compatibility with current CMOS technology. Bi-stable switching for 1d-1r memory was demonstrated for our 2-stack cross-point structures showing excellent behavior for both diode and storage nodes. The forward current density for p-CuO{sub}X/n-IZO{sub}X diodes was over 10{sup}4 A/cm{sup}2, and the operation voltage for the storage node with diode attached was around 3V.

关键词： Switches diodes Current density CMOS technology read-write memory resistors Heterojunctions Transistors Fabrication Temperature

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Novel Heat dissipating Cell Scheme for Improving a reset distribution in a 512M Phase-change random Access Memory (PrAM)

Novel Heat Dissipating Cell Scheme for Improving a Reset Dis...

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Symposium on VLSI Technology

作者： d.H. Kang J.S. Kim Y.r. Kim Y.T. Kim M.K. Lee Y.J. Jun J.H. Park F. Yeung C.W. Jeong J. Yu J.H. Kong d.W. Ha S.A. Song J. Park Y.H. Park Y.J. Song C.Y. Eum K.C. ryoo J.M. Shin d.W. Lim S.S. Park J.H. Kim W.I. Park K.r. Sim J.H. Cheong J.H. Oh J.I. Kim Y.T. Oh K.W. Lee S.P. Koh S.H. Eun N.B. Kim G.H. Koh G.T. Jeong H.S. Jeong Kinam Kim Advanced Technology Development Team 2 Yongin-City Gyunggi-Do South Korea Semi. Business Samsung Electronic Co. Ltd. Yongin-City Gyunggi-Do South Korea CAE Yongin-City Gyunggi-Do South Korea Analytical Engineering Center Samsung Advanced Institute of Technology Yongin-City Gyunggi-Do South Korea Process Analysis & Control Group Memory R&D Div. Yongin-City Gyunggi-Do South Korea

ISBN: (纸本)4900784036;97

Programming with larger current than optimized one is often preferable to ensure a good resistance distribution of high-resistive reset state in high-density phase-change random access memories because it is very effective to increase the resistance of cells to a target value. In this paper, we firstly report that this larger current writing may conversely degrade the reset distribution by reducing the resistance of normal cells via the partial crystallization of amorphous Ge 2 Sb 2 Te 5 and this degradation can be suppressed by designing a novel cell structure with a heat dissipating layer.

关键词： Phase change random access memory Crystallization degradation Amorphous materials Writing resistance heating Temperature Phase change materials Switches Cooling

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Small-Signal Analysis and Modeling of Asymmetric Source/drain Parasitic resistances for drAM Access Transistors in Low-Power Applications

Small-Signal Analysis and Modeling of Asymmetric Source/Drai...

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International Conference on Simulation of Semiconductor processes and devices (SISPAd)

作者： Young Pil Kim Matthew Ulrich Praveen Vaidyanathan Venkat Ananthan Chandra Mouli Kunal Parekh R&D Process Development Micron Technology Inc. Boise ID USA

The small-signal conductance technique was extended to extract asymmetric source/drain parasitic resistances. It was also applied in order to analyze the t Wr delay of drAM cell transistors in production and to develop a non-planar cell transistor such as recessed access device (rAd) for low-power drAM cells. Factors limiting the drive current for planar and non-planar access transistors in the low-power drAM cells were discussed

关键词： random access memory data mining Threshold voltage Production Equations research and development delay drives Monitoring Manufacturing

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Sub-6F2 Charge Trap dynamic random Access Memory Using a Novel Operation Scheme 64

Sub-6F2 Charge Trap Dynamic Random Access Memory Using a Nov...

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64th device research Conference, drC 2006

作者： Huo, ZongLiang Baik, SeungJae Kim, Shieun Yeo, In-Seok Chung, U-In Moon, Joo Tae Process Development Team Semiconductor R&D Center Samsung Electronics Co. LTD. San#24 Nongseo-Ri Giheung-Eup Gyeonggi-Do Yongin-City449-711 Korea Republic of

ISBN: (纸本)0780397495

For the first time, we have demonstrated the feasibility of charge trap-based devices with ultra-thin tunnel oxide for high density drAM application. Experimental results using direct tunneling scheme show good memory characteristics such as long retention time (>1000sec), large memory window (>1V), non-destructive read, high endurance, and acceptable programming speed (~100ns). Further improvement for low operation voltage and sub-6F2 cell size can be achieved by adopting a novel hot electron injection method. This novel operation scheme is helpful for efficient programming and minimizing disturbance. due to the simple and fully logic compatible process, charge trap drAM is considered to be a good candidate for future high-density drAM and SOC applications. © 2006 IEEE.

关键词： Hot electrons

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