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In Support of Early-Career researchers

OrGANOMETALLICS 2023年第3期42卷 177-181页

作者： Bandichhor, rakeshwar Borovik, A. S. de Bettencourt-dias, Ana Eastgate, Martin d. radu, Nora S. Shi, Feng McElwee-White, Lisa API R&D IPDO Dr. Reddy’s Laboratories Ltd. Bachupally Hyderabad Telangana 500090 India Department of Chemistry University of California 1102 Natural Science II Irvine California 92797 United States Department of Chemistry University of Nevada Reno Nevada 89557 United States Chemical Process Development Bristol Myers Squibb 1 Squibb Drive New Brunswick New Jersey 08903 United States DuPont Co. Experimental Station E336 200 Powder Mill Road Wilmington Delaware 19803 United States Research Center of Chiral Functional Heterocycles School of Chemistry and Materials Science Jiangsu Normal University Xuzhou 221116 China School of Petrochemical Engineering Changzhou University Changzhou 213164 China Department of Chemistry University of Florida Gainesville Florida 32611-7200 United States

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In Support of Early-Career researchers

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OrGANIC process rESEArCH & development 2023年第2期27卷 233-237页

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In Support of Early-Career researchers

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JOUrNAL OF OrGANIC CHEMISTrY 2023年第4期88卷 1923-1927页

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In Support of Early-Career researchers

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INOrGANIC CHEMISTrY 2023年第6期62卷 2489-2493页

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Thermo compression bonding for large dies under protective atmosphere

Thermo compression bonding for large dies under protective a...

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Electronic Components and Technology Conference (ECTC)

作者： Jonathan Abdilla Uwe Bayer ruurd Boomsma Stephan Bulacher Alexander Kalss Stephan Martin Harald Meixner Thiago Moura Hubert Selhofer Wolfgang Voegele Martin Widauer R&D Process Development Besi Austria GmbH Radfeld Austria

ISBN: (数字)9781728161808

ISBN: (纸本)9781728161815

In bond pitch ranges of 50 to 30 micrometer Thermo Compression Bonding (TCB) is an established bonding technology for example for high bandwidth memory (HBM) using relative small dies. For logic, processor and interposer applications, die sizes may be much larger and bonding behavior may be more complicated due to warpage, relative high heater powers, high number of contacts and possible oxidation issues. This paper will describe bonding behavior for up to 80mm × 80mm die sizes including methods using protective/reduction gas during bonding with extreme low gas consumption and effective oxidation prevention.

关键词： Bonding Substrates Atmosphere Oxidation Flip-chip devices Heating systems Temperature dependence

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High-speed ultra-accurate direct C2W bonding

High-speed ultra-accurate direct C2W bonding

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Electronic Components and Technology Conference (ECTC)

作者： Birgit Brandstätter daniel Aschenwald Benedikt Auer Norbert Bilewicz ruurd Boomsma Christoph Kröll Andreas Mayr richard Neumayr Hannes rieser Mario Schernthaner Hubert Selhofer Florian Speer Peter Unterwaditzer András Vidéki Martin Widauer Thomas Widmann R&D Process Development Besi Austria GmbH Radfeld Austria

ISBN: (数字)9781728161808

ISBN: (纸本)9781728161815

Chip-to-wafer hybrid bonding is needed as contact pitch and pad size decrease to the single micrometer range (5 micrometer or lower). Here, classical bonding technologies like themo-compression bonding and flip-chip with mass reflow are no longer sufficient, and hybrid bonding emerges as an attractive alternative. While the technology is well known in wafer-to-wafer processing, for chip-to-wafer at industrial speed and accuracy, new placement technologies and deeper understanding of accuracy behavior during the bonding process both are essential. This paper describes new optical recognition methods for small pads for accurate in-situ alignment before the bonding stroke as well as a new bond-head design and behavior for accurate placement at 200 nm at each point of the die, including large dies, and at speeds of 2000 units per hour.

关键词： Substrates Cameras Bonding Magnetic heads Vibrations Tools Uncertainty

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Modulation of Molybdenum Oxidation State Via Catalytic-Oxidation

SSRN

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SSrN 2022年

作者： Song, Taeseup Lee, Kangchun Sun, Seho Ko, Hyunseok Cho, Sung Beom Lee, Ganggyu Lee, dongsoo Paik, Ungyu Foundry Process Development Team Semiconductor R&D Center Samsung Electronics Hwaseong Korea Republic of Department of Energy Engineering Hanyang University Seoul Korea Republic of Jinju Korea Republic of Department of Materials Science and Engineering Ajou University Suwon Korea Republic of

Molybdenum (Mo) is a promising metal contact material to replace tungsten due to its low electrical resistivity in sub-3nm next-generation semiconductor processes. However, the high dissolution rate of Mo during the chemical mechanical planarization (CMP) process limits its practical introduction because it deteriorates surface flatness and consequently causes decisive device failure. Herein, we report a strategy to suppress Mo dissolution by manipulating the oxidation state of Mo film via catalytic-oxidation reaction. Adoption of Fe catalyst under trace amounts of H2O2 enables the formation of insoluble MoO2 and Mo2O5 phases while minimizing the generation of the soluble MoO3 phase. The dissolution behaviors of Mo at various oxidation states were investigated according to both oxidizer and catalyst concentrations during the CMP process. To identify the detailed dissolution phenomena of Mo, the Gibbs free energies and dissolution kinetics in polymorphs of Mo oxide were validated using density functional theory (dFT) calculation. We successfully confirmed that catalytic-oxidation using Fe ions achieved an enhanced removal rate from 780 to 1500 Å/min, even though the dissolution rate was minimized from 636 to 57 Å/min compared to a simple oxidation reaction. © 2022, The Authors. All rights reserved.

关键词： Catalytic oxidation

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Enhancing the reliability of Inp-Based Qd Color Conversion Layer Through a Uniform Organic Encapsulation Layer Via Inkjet Printing

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SSrN 2024年

作者： Lee, Sang Youn Sakong, Chun Ju, Byeong-Kwon Cho, Kwan Hyun Autonomous Manufacturing & Process R&D Dept. Korea Institute of Industrial Technology Gyeong-gi-do Ansan-si15588 Korea Republic of Dept. of Micro/Nano Systems College of Engineering Korea University 145 Anam-ro Seongbuk-gu Seoul02841 Korea Republic of EM Development Team ChemE Inc. 199 Techno 2-ro Yuseong-gu Daejeon34025 Korea Republic of

Quantum dot (Qd) as a color conversion layer (CCL) is gaining increasing attention for use in next generation displays. However, Qd CCL, especially those based on indium phosphide (InP) materials, are vulnerable to oxygen and moisture. Accordingly, even in CCL technology, encapsulation is essential to mitigate performance reduction due to the degradation of color conversion efficiency (CCE). Herein, we employed only acrylic-based resin to produce a uniform encapsulation layer on a CCL, enhancing the CCE reliability of the Qd CCL under ambient conditions. To print a uniform encapsulation layer, we confirmed the significance of the minimized surface energy differences on glass, bank, and Qd film through O2 plasma treatment. We also investigated coating characteristics through adjustment of the drop spacing to analyze the reliability of the CCL. Compared to the CCL without an encapsulation layer, the CCE only showed a decrease of 1.96% at green 9and 3.6% at red light, after 168 hours. The T95 (time to 95% of the initial luminance) was improved from 5.25 hours to 75.02 hours by applying the encapsulation layer. As a result, we enhanced the stability of the InP-based Qd CCL by printing only an organic encapsulation layer using the inkjet printing process. © 2024, The Authors. All rights reserved.

关键词： Conversion efficiency

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defect detection in photolithographic patterns using deep learning models trained on synthetic data

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Heliyon 2025年第10期11卷

作者： Shinde, Prashant P. Pai, Priyadarshini P. Adiga, Shashishekar P. Subramanya Mayya, K. Seo, Yongbeom Hwang, Myungsoo Go, Heeyoung Park, Changmin NextGen Projects (SAIT-India) Samsung Semiconductor India Research Bangalore 560048 India Foundry Process Development Team Semiconductor R&D Center Samsung Electronics Seoul South Korea

In the photolithographic process vital to semiconductor manufacturing, various types of defects appear during EUV pattering. due to ever-shrinking pattern size, these defects are extremely small and cause false or missed detection during inspection. Specifically, the lack of defect-annotated quality data with good representation of smaller defects has prohibited deployment of deep learning based defect detection models in fabrication lines. To resolve the problem of data unavailability, we artificially generate scanning electron microscopy (SEM) images of line patterns with known distribution of defects and autonomously annotate them. We then employ state-of-the-art object detection models to investigate defect detection performance as a function of defect size, much smaller than the pitch width. We find that the real-time object detector YOLOv8 has the best mean average precision of 96% as compared to EfficientNet, 83%, and SSd, 77%, with the ability to detect smaller defects. We report the smallest defect size that can be detected reliably. When tested on real SEM data, the YOLOv8 model correctly detected 84.6% of Bridge defects and 78.3% of Break defects across all relevant instances. These promising results suggest that synthetic data can be used as an alternative to real-world data in order to develop robust machine-learning models. © 2025

关键词： data generation defect detection Machine learning Scanning electron microscopy

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Chemical process development in the Pharmaceutical Industry in Europe—Insights and Perspectives from Industry Scientists

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Angewandte Chemie 2025年

作者： Joachim Krueger André P. dieskau Jorma Hassfeld Joerg Gries Oliver Block Hilmar Weinmann daniel Kaufmann Stefan Hildbrand Volker Kraft robert Moeckel Juan r. dehli Ulrich Scholz Carl Friedrich Nising Pharmaceuticals CMC & Technology Bayer AG D-42096 Wuppertal Germany Global CMC Development Merck Healthcare KGaA D-64293 Darmstadt Germany Chemical Process R&D Johnson & Johnson Innovative Medicine Beerse B-2340 Belgium Chemical & Analytical Development Novartis AG Basel CH-4056 Switzerland Process Chemistry & Catalysis F. Hoffmann-La Roche Ltd Basel CH-4070 Switzerland R&D Global CMC Development Synthetics Sanofi-Aventis Deutschland GmbH D-65926 Frankfurt Germany Chemical Development Boehringer Ingelheim Pharma GmbH & Co. KG D-55216 Ingelheim am Rhein Germany

Chemical process development is a critical component in the development process for active pharmaceutical ingredients (APIs). With interfaces to drug discovery and API manufacturing, chemical process development activities must deliver scalable, safe, cost-efficient, sustainable, and reliable processes for novel as well as marketed APIs. despite its importance for the pharmaceutical industry and society, the domain of chemical process development, together with its advances and challenges, is often not well known to nonpractitioners. As industry scientists, we provide a scientific perspective on the state of affairs in chemical process development, which we believe will be of value to a broader audience, including academic researchers, students, and professionals from related fields.

关键词： drug development drug discovery Industrial chemistry Pharmaceutical industry process chemistry

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