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14th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2025

作者： Mauromicale, Giuseppe Sitta, Alessandro Fiore, Michele Calabretta, Michele Iannuzzo, Francesco STMicroelectronics Quality Manufacturing and Technology R&d Catania Italy University of Aalborg Department of Energy Technology Aalborg Denmark

ISBN: (纸本)9798331516116

In this work, the dynamic gate stress (dGS) on a planar-gate silicon carbide MOSFET is performed based on an automotive mission profile. An extensive characterization was performed, even beyond automotive qualification guidelines, including the effect of the temperature. The results show that the temperature accelerates the threshold voltage drift, which ranges from 3 % at room temperature up to 6 % at 125 °C and 150°C, with negligible impact on the on-state resistance. Moreover, we measured the gate-source voltage waveforms before and after the dGS stress, not finding significant variations in switching gradients. © 2025 IEEE.

关键词： Silicon carbide

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Understanding the role of encapsulation layers under wet conditions on the reliability of power devices 8

Understanding the role of encapsulation layers under wet con...

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8th Electron devices Technology & Manufacturing Conference (EdTM)

作者： reggiani, Susanna Balestra, Luigi Gnani, Elena rossetti, Mattia depetro, riccardo Univ Bologna ARCES Bologna Italy Univ Bologna DEI Bologna Italy STMicroelectronics Smart Power R&D Cornaredo Italy

ISBN: (纸本)9798350383089;9798350371529

recent characterizations of epoxy-based molding compounds under wet conditions were carried out to understand the role of charge spreading in integrated high-voltage devices. Space-charge injection at high electric fields showed unexpected instabilities and numerical simulations were carried out, showing a significant influence played by the reduced dimensions of the structures under investigation. As a preliminary result, humidity might influence not only the mobility but also the barrier lowering at the electrodes.

关键词： Epoxy-Molding Compound Moisture High Voltage Integrated Circuits TCAd simulations

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Competitors-Aware Stochastic Lap Strategy Optimisation for race Hybrid Vehicles

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IEEE TrANSACTIONS ON VEHICULAr TECHNOLOGY 2023年第3期72卷 3074-3089页

作者： Paparusso, Luca riani, Manuel ruggeri, Fabio Braghin, Francesco Politecn Milan Dept Mech Engn I-20133 Milan Italy STMicroelectronics R&D Div Cornaredo MI Italy Philip Morris Int Bologna Italy

World Endurance Championship (WEC) racing events are characterised by a relevant performance gap among competitors. The fastest vehicles category, consisting in LMP1 race hybrid vehicles, has to respect energy usage constraints set by the technical regulation. Considering absence of competitors, i.e. traffic conditions, the optimal energy usage strategy for lap time minimisation is typically computed through a constrained optimisation problem. To the best of our knowledge, the majority of state-of-the-art works neglects competitors. This leads to a mismatch with the real world, where traffic generates considerable time losses. To bridge this gap, we propose a new framework to offline compute optimal strategies for the powertrain energy management considering competitors. Through analysis of the available data from previous events, statistics on the sector times and overtaking probabilities are extracted to encode the competitors' behaviour. Adopting a multi-agent model, the statistics are then used to generate realistic Monte Carlo (MC) simulation of their position along the track. The simulator is then adopted to identify the optimal strategy as follows. We develop a longitudinal vehicle model for the ego-vehicle and implement an optimisation problem for lap time minimisation in absence of traffic, based on Genetic Algorithms. Solving the optimisation problem for a variety of constraints generates a set of candidate optimal strategies. Stochastic dynamic Programming is finally employed to online choose the best strategy at the beginning of each lap, considering the competitors' initial position and their forecast future motion provided by the MC simulator. Our approach, validated on data from a real stint of race, allows to significantly reduce the lap time.

关键词： Stochastic dynamic programming genetic algorithms lap time minimisation traffic race hybrid vehicles

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A compact 6-axis IMU combining low-power operation with high stability and low noise 9

A compact 6-axis IMU combining low-power operation with high...

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9th IEEE International Symposium on Inertial Sensors and Systems (IEEE INErTIAL)

作者： Valzasina, Carlo rizzini, Francesco Guerinoni, Luca Falorni, Luca Garbarino, Marco Polesel, Stefano Milani, Marco Quartiroli, Matteo Mecchia, Alessandro rizzo, Alessandra STMicroelectronics AMS R&D Milan Italy STMicroelectronics AMS MEMS sGRP Milan Italy

ISBN: (纸本)9781665402828

This paper presents design, architecture and characterization results of stmicroelectronics LSM6dSV16X 6-axis Inertial Measurement Unit (IMU). Traditional consumer-grade IMUs have been split into low-power sensors intended for Wearable & IoT applications [1, 2] and consumer High-End sensors offering improved stability of the gyroscope and accelerometer parameters [3, 4, 5] as result of increased power consumption. LSM6dSV16X presents the traditional compact footprint of 2.5 x 3.0 mm(2) housed in a plastic full mold LGA package and it is the first sensor to offer state-of-the-art stability performance, Zero rate Level (ZrL) temperature drift of +/- 5 mdps/K, Zero-g Level (ZgL) temperature drift lower than +/- 0.1 mg/K together with 650 mu A current consumption in high-performance mode, combined with extremely low gyroscope noise of 2.8 mdps/root(Hz).

关键词： IMU accelerometer gyroscope

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deep Learning Algorithm for Advanced Level-3 Inverse-Modeling of Silicon-Carbide Power MOSFET devices

Deep Learning Algorithm for Advanced Level-3 Inverse-Modelin...

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2023 Workshop on Electronics Communication Engineering, WECE 2023

作者： Spata, Massimo Orazio Battiato, Sebastiano Ortis, Alessandro rundo, Francesco Calabretta, Michele Pino, Carmelo Messina, Angelo Dipartimento di Matematica ed Informatica University of Catania Italy STMicroelectronics ADG R&D Division Catania Italy

ISBN: (纸本)9781510672574

Inverse modelling with deep learning algorithms involves training deep architecture to predict device’s parameters from its static behaviour. Inverse device modelling is suitable to reconstruct drifted physical parameters of devices temporally degraded or to retrieve physical configuration. There are many variables that can influence the performance of an inverse modelling method. In this work the authors propose a deep learning method trained for retrieving physical parameters of Level-3 model of Power Silicon-Carbide MOSFET (SiC Power MOS). The SiC devices are used in applications where classical silicon devices failed due to high-temperature or high switching capability. The key application of SiC power devices is in the automotive field (i.e. in the field of electrical vehicles). due to physiological degradation or high-stressing environment, SiC Power MOS shows a significant drift of physical parameters which can be monitored by using inverse modelling. The aim of this work is to provide a possible deep learning-based solution for retrieving physical parameters of the SiC Power MOSFET. Preliminary results based on the retrieving of channel length of the device are reported. Channel length of power MOSFET is a key parameter involved in the static and dynamic behaviour of the device. The experimental results reported in this work confirmed the effectiveness of a multi-layer perceptron designed to retrieve this parameter. © 2024 SPIE. All rights reserved.

关键词： Scattering parameters

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A BASELINE ON CONTINUAL LEArNING METHOdS FOr VIdEO ACTION rECOGNITION 30

A BASELINE ON CONTINUAL LEARNING METHODS FOR VIDEO ACTION RE...

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30th IEEE International Conference on Image Processing (ICIP)

作者： Castagnolo, Giulia Spampinato, Concetto rundo, Francesco Giordano, daniela Palazzo, Simone Univ Catania PeRCeiVe Lab Catania Italy STMicroelectronics R&D Power & Discretes ADG Catania Italy

ISBN: (纸本)9781728198354

Continual learning has recently attracted attention from the research community, as it aims to solve long-standing limitations of classic supervised-trained models. However, most research on this subject has tackled continual learning in simple image classification scenarios. In this paper, we present a benchmark of state-of-the-art continual learning methods on video action recognition. Besides the increased complexity due to the temporal dimension, the video setting imposes stronger requirements on computing resources for top-performing rehearsal methods. To counteract the increased memory requirements, we present two method-agnostic variants for rehearsal methods, exploiting measures of either model confidence or data information to select memorable samples. Our experiments show that, as expected from the literature, rehearsal methods outperform other approaches;moreover, the proposed memory-efficient variants are shown to be effective at retaining a certain level of performance with a smaller buffer size.

关键词： Continual Learning Video Action recognition Benchmark Memory Efficiency

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Phase Change Memory: A review on Electrical Behavior and Use in Analog In-Memory-Computing (A-IMC) Applications

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AdVANCEd ELECTrONIC MATErIALS 2024年第12期10卷

作者： Boniardi, Mattia Baldo, Matteo Allegra, Mario redaelli, Andrea STMicroelectronics Technol R&D I-20864 Agrate Brianza Italy

recent development and progress of Artificial Intelligence (AI) algorithms made clear that this topic is a paradigm shift with respect to the past. High throughput and ability to do complex tasks makes AI a great field of opportunity. This advancement is somehow limited by the physical implementation of the chips that are still bound to the historical von-Neumann Architecture with processing units and memory hardware spatially separated. The way data is bussed and processed needs disruptive innovation, rather than an evolutionary approach, too. In Analog In-Memory Computing (A-IMC) the typical properties of resistance-based memory technologies are used to both store and compute information. This allows for incredibly high parallelism and removes the problems related to the known von-Neumann bottleneck. In the present work, A-IMC networks based on resistive memories and on the Phase Change Memory (PCM) technology, in particular, are extensively discussed. After a first review of the general features of PCM devices, their application to A-IMC is described, aiming at a full description of the current technological scenario.

关键词： A-IMC ePCM GST Ge-GST MVM non-idealities compensation phase change memory

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Simulation Analysis of the Bit Error Induced by EMI on Galvanically Isolated data-Link Embedded in an Automotive Battery Management IC 25

Simulation Analysis of the Bit Error Induced by EMI on Galva...

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24th International Conference on Electromagnetics in Advanced Applications (ICEAA) / 12th IEEE-APS Topical Conference on Antennas and Propagation in Wireless Communications (IEEE APWC)

作者： Ahmadi, Amirhossein Serratoni, Claudio Bendotti, Valerio Crovetti, Paolo S. Politecn Torino Dept Elect & Telecommun Turin Italy STMicroelectronics ADG Smart Power R&D Milan Italy

ISBN: (纸本)9798350320589

In this paper, the susceptibility to electromagnetic interference (EMI) of a battery management system (BMS) used in electric vehicles is addressed. In particular, the effects of EMI on the BMS vertical interface (VIF), i.e., the galvanically isolated data link between different BMS modules are analyzed by transistor-level simulations with reference to direct power injection (dPI) and bulk current injection (BCI) test conditions for the first time. Based on the simulations, the dPI and BCI susceptibility levels of two different VIF architectures are estimated, and different failure mechanisms are highlighted.

关键词： Electric Vehicle (EV) Battery Management System (BMS) Vertical Interface (VIF) Electromagnetic Compatibility (EMC) Transistor-level simulation Integrated Circuit EMC Electromagnetic Interference (EMI) direct Power Injection (dPI) Bulk Current Injection (BCI)

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Frequency Stop-Band Management System for dC-dC Converters

Frequency Stop-Band Management System for DC-DC Converters

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Annual IEEE Conference on Applied Power Electronics Conference and Exposition (APEC)

作者： Alessandro Bertolini Alberto Cattani Claudio Luise Alessandro Gasparini APMS R&D STMicroelectronics Milan

ISBN: (数字)9798331516116

ISBN: (纸本)9798331516123

Ever complex electronic systems have pushed the requirements on power management to new limits, with applications needing to satisfy stringent operating frequency constraints while maintaining high efficiency. This article addresses the requirement to avoid any operation of a dC-dC converter in specific frequency bands when regulating light loads in discontinuous-conduction-mode (dCM) and operating in pulse-skip-mode (PSM). The presented stop-band-management-system (SBMS) is a versatile mixed-signal solution that has been designed for an inverting buck-boost (IBB) converter, which generates a programmable output voltage in the range of -1V to -9V from a Li-Ion battery. Targeting consumer Active-Matrix-Organic-Light-Emitting-diode (AMOLEd) display applications, a power-management-integrated-circuit (PMIC) has been fabricated in a 180nm bipolar-CMOS-dMOS (BCd) process, and the effectiveness of the proposed solution is shown with experimental results.

关键词： Lithium-ion batteries Power system management Switched mode power supplies Stability criteria dC-dC power converters Switches Frequency conversion Topology Transient analysis Active matrix organic light emitting diodes

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A Comparative Study on Hall Plate Topologies in p-GaN Technology

IEEE SENSORS LETTERS

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IEEE SENSOrS LETTErS 2023年第10期7卷 1页

作者： Crescentini, Marco Marchesi, Marco Gibiino, Gian Piero Ion, Lucian Petrisor Castagna, Eloisa Iucolano, Ferdinando Univ Bologna Dept Elect Elect & Informat Engn I-40136 Bologna Italy Univ Bologna Adv Res Ctr Elect Syst I-40136 Bologna Italy STMicroelectronics Analog & Smart Power Technol R&D I-20007 Cornaredo Italy STMicroelectronics Automot & Power Discrete Grp R&D I-95121 Catania Italy

Gallium nitride (GaN) power transistors are being increasingly used in high-power and high-frequency electronic systems due to their high breakdown field, high carrier density, and good thermal conductivity. despite these advantages, system durability of GaN-based power systems is hindered by the necessity to work at variable operating conditions. The necessary real-time monitoring of the load current is normally implemented by using external shunt resistors, yet the implementation of GaN-based isolated current sensor would be beneficial to the final power system in terms of space occupation as well as cost. This letter describes the implementation of two Hall-effect devices in p-type GaN (p-GaN) technology, which can potentially be used as integrated current sensors in GaN monolithic implementation. These devices are experimentally characterized and compared in terms of sensitivity, offset, and input resistance. Some nonideality effects are also outlined, identifying future research directions.

关键词： Magnetic sensors Magnetic sensors current sensors current sensors gallium nitride (GaN) gallium nitride (GaN) Hall effect Hall effect

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