检索结果-内蒙古大学图书馆

4th IEEE International Workshop on Metrology for Automotive (MetroAutomotive)

作者： rundo, Francesco Calabretta, Michele Sitta, Alessandro rundo, Michael S. Battiato, Sebastiano Messina, Angelo A. STMicroelectronics QMT R&D P&D Catania Italy Univ Catania Dipartimento Ingn Informat Elettr & Elettron PeRCeiVe Lab Catania Italy Univ Catania Dipartimento Matemat & Informat Catania Italy STMicroelectronics Italy Publ Affairs Catania Italy

ISBN: (纸本)9798350384994;9798350384987

Within the framework of the assisted systems for automotive applications, considerable research has been employed to monitoring the driver's attention level in order to assess the risk level of the driving scenario. In this context, physiological monitoring of the driver's condition has emerged as a relevant approach to enhance driving assistance without having an invasive approach. According to these premises, the authors have developed a driving assistance system capable to employ a dedicated bio-sensor for capture the driver's photoplethysmographic (PPG) signal, which is closely linked to their level of attention. This PPG signal is then processed by a dedicated deep learning architecture to reconstruct the driver's attention level. Meanwhile a separate automotive-grade intelligent vision-based system has been developed to quantify the risk level of the driving scenario by means of a video saliency analysis technique. The effectiveness of this comprehensive system has been validated through experimental results.

关键词： AdAS deep Learning automotive risk assessment

来源：评论

学校读者我要写书评

暂无评论

In-Situ Characterization of Plasma Species for Process Optimization and Improvement

In-Situ Characterization of Plasma Species for Process Optim...

引用

Electronics Packaging Technology Conference (EPTC)

作者： djamila Chou Chloe Schubert Valentin ray Laurent Figuiere Laurence Capellaro Nohora Caicedo STMicroelectronics BEMT R&D Grenoble

ISBN: (数字)9798331522001

ISBN: (纸本)9798331522018

Plasma treatments are widely known and used in physical chemistry, chemical engineering, polymer science, biomedicine, semiconductor fabrication, etc. In semiconductors, plasma-air interactions are commonly used in front-end and back-end processes, the understanding of plasma reactive species within plasma treatments is still very limited and at an early stage. Their interaction between ionized species, radicals, plasma atoms and sample chemical composition is still unknown. The challenge is to selectively produce actives species beforehand identified. A better understanding of species within a plasma could lead to considerable improvements in terms of efficiency and throughput. This paper begins with a description of the methodology used to characterize plasma. This is followed by a deep study of the targeted chemistry of different back -end processes and their possible optimization. Finally, an optimized recipe is suggested for some back-end processes such underfilling, molding and wirebonding.

关键词： Adhesives Process control Physical chemistry Plasmas Wire resins Polymers Optimization Substrates Electronics packaging

来源：评论

学校读者我要写书评

暂无评论

ATTENTION-BASEd CONVOLUTIONAL NEUrAL NETWOrK FOr CT SCAN COVId-19 dETECTION

ATTENTION-BASED CONVOLUTIONAL NEURAL NETWORK FOR CT SCAN COV...

引用

IEEE International Conference on Acoustics, Speech, and Signal Processing (ICASSP)

作者： rondinella, A. Guarnera, F. Giudice, O. Ortis, A. rundo, F. Battiato, S. Univ Catania Dept Math & Comp Sci Catania Italy STMicroelectronics ADG R&D Power & Discretes Div Catania Italy

ISBN: (纸本)9798350302615

The accurate detection of Covid-19 from chest Computed Tomography (CT) images can assist in early diagnosis and management of the disease. This paper presents a solution for Covid-19 detection, presented in the challenge of 3rd Covid-19 competition, inside the "AI-enabled Medical Image Analysis Workshop" organized by IEEE International Conference on Acoustic, Speech and Signal Processing (ICASSP) 2023. In this work, the application of deep learning models for chest CT image analysis was investigated, focusing on the use of a resNet as a backbone network augmented with attention mechanisms. The resNet provides an effective feature extractor for the classification task, while the attention mechanisms improve the model's ability to focus on important regions of interest within the images. We conducted extensive experiments on a provided dataset and achieved a macro F1 score of 0.78 on the test set, demonstrating the potential to assist the diagnosis of Covid-19. Our proposed approach leverages the power of deep learning with attention mechanisms to address the challenges of Covid-19 detection in the early detection and management of the disease. In both test and validation set, the proposed method outperformed the baseline of the challenge, ranking fifth in the competition.

关键词： Covid-19 detection deep Learning Computed Tomography classification Medical imaging

来源：评论

学校读者我要写书评

暂无评论

Wafer Bifurcation as a Spontaneous Symmetry Breaking 23

Wafer Bifurcation as a Spontaneous Symmetry Breaking

引用

23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

作者： Vinciguerra, Vincenzo Landi, Antonio Malgioglio, Giuseppe Luigi STMicroelectronics ADG R&D Stradale Primosole 50 I-95121 Catania Italy

ISBN: (纸本)9781665458368

A connection between the phenomenon of wafer bifurcation and that of spontaneous symmetry breaking (SSB) has been established. Indeed, by developing an analytical approximation of the elastic energy of a wafer coated with a thin layer (e.g. a metal), it is shown as the elastic potential energy, interpreted as a quantity contributing to the thermodynamic free energy, can be investigated within the framework of the Landau theory of the second order phase transitions. The elastic energy of a bifurcated wafer is a complex function of the stress and the curvatures in the two perpendicular directions. In this work, it is shown as a translation of the coordinate system of the curvatures allows to gain a potential which has a "Mexican hat" shape. This is a distinctive trait of the phenomenon of spontaneous symmetry breaking (SSB). Moreover, it is shown as the values of the coordinates at the minimum of the SSB potential agrees with those provided by the theory. Bifurcation is hence a phenomenon that can also be interpreted as a spontaneous symmetry breaking where the rotational symmetry of a disc shaped wafer is broken. It occurs because of a lowering of the wafer energy in the SSB broken symmetry configuration.

关键词： Bifurcation Wafer Spontaneous Symmetry Breaking Finite Element Analysis (FEA) Simulations

来源：评论

学校读者我要写书评

暂无评论

A Novel Common-Gate Comparator with Auto-Zeroing Offset Cancellation 17

A Novel Common-Gate Comparator with Auto-Zeroing Offset Canc...

引用

17th Conference on Ph.d research in Microelectronics and Electronics (PrIME)

作者： dago, Alessandro Leoncini, Mauro Cattani, Alberto Levantino, Salvatore Ghioni, Massimo Politecn Milan DEIB Milan Italy STMicroelectronics AMG R&D Milan Italy

ISBN: (纸本)9781665467001

This paper presents a novel auto-zeroing common-gate comparator. This topology cancels the input-referred offset voltage by AC coupling the gates of the two input mosfets. The circuit operation is divided in two phases: in the first one, the circuit is in closed loop and samples the offset voltage as a voltage difference between two capacitors, while, in the second phase, the circuit is configured in open loop to compare the two input signals. Monte Carlo simulations run on a reference design in CMOS process shows that the offset standard deviation is reduced from 4.42mV down to 25.85 mu V. The designed comparator shows a 290 mu W power consumption from a 5V supply, while occupying a total area of 0.0156mm(2).

关键词： common-gate comparator offset cancellation zero-current detector (ZCd) resonant switched-capacitor converter (reSCC)

来源：评论

学校读者我要写书评

暂无评论

From Wafer Bifurcation to Warpage die: a Correlation Method to determine the Warpage of a Metal-Coated Silicon Substrate 23

From Wafer Bifurcation to Warpage Die: a Correlation Method ...

引用

23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

作者： Vinciguerra, Vincenzo Malgioglio, Giuseppe Luigi Landi, Antonio Valastro, Salvatore Cafra, Brunella renna, Marco STMicroelectronics ADG R&D Stradale Primosole 50 I-95121 Catania Italy

ISBN: (纸本)9781665458368

Achieving a deeper comprehension and control on the evolution of warpage from wafer scale to die level can be a benefit within the semiconductor industry. In this work we compare the warpage measured in the use-case of a thin 8 '' wafer Si (001), metalized with a 4.5 mu m Al thin layer, with that one measured in the 9mmx12mm die obtained from the wafer. It results from measurements that the wafer bifurcates, whereas the die does not show a high warpage value. The bifurcation behavior of the wafer and its warpage has been simulated by means of the ANSYS mechanical solver. By exploiting similar conditions in the simulations, the warpage in the die has been also investigated. It is shown how the conservation of the stress can be transferred from the wafer case to the die case and it justifies the presence of a bifurcation at the wafer scale and its absence at the die level. The range of validity of this assert depends also on the die thickness. These results can be extended to other substrates, such as silicon carbide (SiC).

关键词： Bifurcation Wafer die Warpage Curvature Finite Element Analysis (FEA) Simulations

来源：评论

学校读者我要写书评

暂无评论

Models of Bifurcation in a Semiconductor Wafer: A Comparison of the Analytical Solution vs. the ANSYS Finite Element Analysis 23

Models of Bifurcation in a Semiconductor Wafer: A Comparison...

引用

23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

作者： Vinciguerra, Vincenzo Malgioglio, Giuseppe Luigi Landi, Antonio STMicroelectronics ADG R&D Stradale Primosole 50 I-95121 Catania Italy

ISBN: (纸本)9781665458368

In this work we report a relationship between the curvature provided by the Stoney equation, considered in an "extended" linear regime, and the arithmetic average of the main curvatures of a bifurcated plain metalized circularly shaped wafer. ANSYS (r) Finite element analysis (FEA) methods have exploited to find out the substrate curvatures for the case of an 8" silicon (001) semiconductor substrates metalized with a 4.5 mu m aluminium metal layer. We have explored the spherical and bifurcation cases. In particular, the bifurcation is induced in the wafer by applying a pair of weak forces acting normally with respect to the wafer surface as perturbations and along two perpendicular diameters. The resulting principal curvatures of the wafer have compared with the bifurcation diagram obtained from the theory. The FEA results also demonstrate a correlation between the Stoney slope extended in the bifurcation interval and the average of the simulated curvatures of the bifurcated wafer.

关键词： Bifurcation Wafer Warpage Curvature Finite Element Analysis (FEA) Simulations

来源：评论

学校读者我要写书评

暂无评论

Integrated Loop-Gain Measurement Circuit for dC/dC Boost Converters with Time-Based Control 17

Integrated Loop-Gain Measurement Circuit for DC/DC Boost Con...

引用

17th Conference on Ph.d research in Microelectronics and Electronics (PrIME)

作者： Leoncini, Mauro Melillo, Paolo Bertolini, Alessandro Levantino, Salvatore Ghioni, Massimo Politecn Milan DEIB Milan Italy STMicroelectronics AMG R&D Milan Italy

ISBN: (纸本)9781665467001

The open-loop transfer function provides valuable insights into the key dynamic characteristics of dC/dC voltage regulators, such as stability, line and load transient response. Nonetheless, the experimental measurement of the loop gain in a monolithically integrated regulator is not straightforward or not even possible by using standard techniques, especially when complex control strategies are adopted. To overcome this issue, we propose an integrated loop-gain measurement circuit specifically designed for dC/dC converters with time-based control. The measurement circuit includes a transconductor, two delay lines, and a simple logic that can be easily integrated in a small silicon area. Moreover, the circuit can be easily disabled during normal operation to minimize its impact on the regulator performance. The proposed circuit was fabricated in a 180nm CMOS technology, occupying a silicon area of 0.027mm(2). Experimental validation was performed by embedding the circuit into a boost converter with time-based control.

关键词： Transient response regulators Voltage measurement Transfer functions Gain measurement Transconductors Frequency conversion

来源：评论

学校读者我要写书评

暂无评论

A Novel Feedforward Technique for Improved Line Transient in Time-Based-Controlled Boost Converters 17

A Novel Feedforward Technique for Improved Line Transient in...

引用

17th Conference on Ph.d research in Microelectronics and Electronics (PrIME)

作者： Melillo, Paolo dago, Alessandro Gasparini, Alessandro Levantino, Salvatore Ghioni, Massimo Politecn Milan DEIB Milan Italy STMicroelectronics AMG R&D Milan Italy

ISBN: (纸本)9781665467001

Time-based control is a valid alternative to conventional voltage-mode since it operates with CMOS-level signals while adding no quantization error. This control methodology is especially suitable for voltage regulation in portable applications, where area and power consumption are key parameters. In boost converters powering LEd displays, a very fast response to disturbances in the line voltage is required, though the typical right-half-plane (rHP) zero in their control-output transfer function tends to cause large overshoots and long settling times. To solve this issue, we propose a novel feedforward technique, which can be easily combined to the time-based control. The technique is based on adding the band-pass-filtered line voltage to the controller input, to speed up the duty-cycle variation. To assess the effectiveness of this method, theoretical analysis and simulation results are proposed.

关键词： fast line transient response feedforward boost converter time-based control

来源：评论

学校读者我要写书评

暂无评论

Copper to resin adhesion characterization for power electronics application: Fracture toughness and cohesive zone analysis

引用

ENGINEErING FrACTUrE MECHANICS 2022年 266卷 108339-108339页

作者： Calabretta, Michele Sitta, Alessandro Oliveri, Salvatore Massimo Sequenzia, Gaetano STMicroelectronics ADG R&D Stradale Primosole 50 Catania Italy Univ Catania Dipartimento Ingn Elettr Elettron & Informat DIEE Catania Italy

The use of molding compound as encapsulant is nowadays increasing in semiconductor power module applications. The adhesion of package interfaces between copper components and molding compound is one of the key aspect for an improved durability. The presented activity proposes the fracture toughness characterization of copper-resin interface in a power semiconductor package due to different experimental tests and the cohesive zone method to describe interfacial fracture. double Cantilever Beam (dCB) and Four Point Bending (FPB) tests have been executed on dedicated bi-material coupons. The scope of these trials has been to enhance two different propagation modes based on different ratio between mode-I (opening) and mode-II (sliding) according to a mixed-mode approach. Strain energy release rate (SErr) and mode-mixity have been estimated by a finite element analysis based on the virtual crack closure technique (VCCT) and the crack surface displacement method (CSd). The information about fracture toughness at two different mode mixity have been considered to predict the SErr for every arbitrary mode mixity. Finally, dedicated finite element models based on cohesive elements have been developed and calibrated considering the fracture toughness experimental values and the measured force-displacements behavior during the two considered tests. dedicated physical analyses have been carried out to validate the proposed method.

关键词： Fracture toughness Cohesive zone method Interface Finite element analysis Power semiconductor package

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：