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Annual International Symposium on reliability Physics

作者： Luca Oldani Silvia Brazzelli Mattia rossetti Smart Power Technology R&D STMicroelectronics Cornaredo Italy

ISBN: (数字)9798331504779

ISBN: (纸本)9798331504786

Hot-hole induced gate current and degradation in advanced n-type lateral drift MOS transistors developed in a 110 nm Bipolar-CMOS-dMOS technology are studied by detailed characterization and TCAd analysis. Hot-hole gate current is characterized by direct measurements and floating-gate method down to the sub-attoampere range. A significant hysteresis in the current versus drain-to-source voltage characteristics is observed due to hole-trapping along the drain drift region. A correlation between ON-state resistance drift and measured gate current is proposed. TCAd simulations including degradation models were carried out and compared with experiments.

关键词： degradation MOSFET Current measurement Layout Implants Hot carriers Logic gates Electrical resistance measurement Stress Stress measurement

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Phase-Change Memory: A Historic Perspective

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PHYSICA STATUS SOLIdI-rAPId rESEArCH LETTErS 2025年

作者： Boniardi, Mattia redaelli, Andrea STMicroelectronics Technol R&D Via C Olivetti 2 I-20864 Agrate Brianza Italy

The phase-change memory (PCM) technology is one of the most studied emerging technologies for both the stand-alone and embedded memory markets. It is based on the peculiar properties of a chalcogenide material, able to make reversible transitions between a poly-crystalline, high conductivity phase, and an amorphous, high resistivity phase, thus enabling the storage of the logical bit. PCM allows for an analog-oriented storage as well, opening the way to an employment on inference for AI applications. The research on PCM began in the late 1960s, driven by the pioneering work of Stanford Ovshinsky, who discovered the threshold and memory switching effects in amorphous materials. An overview of the early work, the cell and array demonstrators all the way to more recent implementations of PCM proves the depth of the research done on this technology. The implementation of different cell architectures and the research on the core material represent the key points for PCM development.

关键词： embedded phase-change memory Ge-GST Ge-Sb-Te in-memory computing phase-change memory storage class memory

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In Search of The Essence of No-code - Elements of data Modeling

In Search of The Essence of No-code - Elements of Data Model...

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ACM/IEEE International Conference on Model driven Engineering Languages and Systems (MOdELS)

作者： Favre, Jean-Marie de Oliveira, raquel Araujo Sottet, Jean-Sebastien Quast, Marc Univ Grenoble Alpes LIG Lab Grenoble France ITIS Dept LIST Esch Sur Alzette Luxembourg STMicroelectronics Technol R&D Crolles France

ISBN: (纸本)9798350324983

Low-code and no-code development has emerged as a significant trend in the software industry, empowering the masses and revolutionizing the way software applications are created. While often labeled as buzzwords, these two terms correspond in reality to a very large set of tools and growing communities. While many studies have been made for low-code, this study aims instead at better understanding the essence of no-code. To do so, we propose, a rigorous selection of 9 data centric no-code tools. Then, we study through the lens of data-modeling (e.g., UML/Class + OCL), how features proposed by those tools compare to their opposite, i.e. coding approaches. Thus, exhibiting an empirical way to define no-code through comparison with coding approaches.

关键词： no-code low-code spreadsheets end-user programming data modeling UML class diagram feature model

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reliability of GaN MOSc-HEMTs: From TddB to Threshold Voltage Instabilities 61

Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltag...

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61st IEEE International reliability Physics Symposium (IrPS)

作者： Vandendaele, W. Leurquin, C. Lavieville, r. Jaud, M. A. Viey, A. G. Gwoziecki, r. Mohamad, B. Nowak, E. Constant, A. Iucolano, F. Univ Grenoble Alpes CEA LETI F-38000 Grenoble France STMicroelectronics R&D Dept Str Primosole 50 I-95121 Catania Italy

ISBN: (纸本)9781665456722

In this paper, we review the gate reliability of the GaN MOSc-HEMT as well as the specific method to address the peculiarities of these transistors. The long term forward gate TddB will be explored showing the impact of the gate recession and gate material on the expected maximum gate oxide field (E-OX,E-MAX) at 10 years. The gate related threshold voltage instabilities (pBTI and nBTI) are reviewed showing the interplay between epitaxy material and gate oxide process. Finally, the high drain voltage influence on Vth (HVBTI) is studied through the development of specific and dedicated setup allowing a deeper understanding of the device instabilities during operation.

关键词： HV-BTI TddB GaN MOSc-HEMT Vth instability GaN on Si

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Epoxy Molding Compound bleeding reduction on surface mount semiconductor device

Epoxy Molding Compound bleeding reduction on surface mount s...

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作者： Viviani, Fulvio Leone, Federico Seki, Hidetoshi Ishii, Masami Backend Manufactoring and Technology R&D STMicroelectronics Agrate Brianza Italy Information & Telecommunication Materials Research Laboratory Sumitomo Bakelite Japan

Epoxy Molding Compound (EMC) bleed consists of a transparent layer of resin which mainly could occur during molding injection at material packing stage. resin bleeds on exposed pad of a Surface Mount device (SMd) can significantly impact the solderability performances of the package, causing failure of the product. de-flashing process after molding is generally performed to eliminate the resin bleed. However, de-flashing can be performed on post-plated leadframes without critical drawback, while it is not recommended on pre-plated leadframes due to the high risk of damaging the finishing surface. In this study, an alternative approach aimed to reduce or eliminate molding compound bleed by optimizing the inorganic part of the molding compound formulation is presented. Besides the quality improvement, the presented approach provides an economical advantage since, by tuning the properties of the filler inside the EMC, it is possible to eliminate the de-flashing process from the assembly flow of a package and consequently reduce the manufacturing cost. © 2023 IMAPS-International Microelectronics and Packaging Society. All rights reserved.

关键词： resins

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Modeling and Analysis of Virgin Ge-rich GST Embedded Phase Change Memories

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IEEE TrANSACTIONS ON ELECTrON dEVICES 2023年第3期70卷 1055-1060页

作者： Baldo, M. Melnic, O. Scudieri, M. Nicotra, G. Borghi, M. Petroni, E. Motta, A. Zuliani, P. Laurin, L. redaelli, A. Ielmini, d. Politecn Milan Dipartimento Elettron Informaz & Bioingn I-20133 Milan Italy IUNET I-20133 Milan Italy CNR IMM I-95121 Catania Italy STMicroelectronics Technol R&D I-20864 Agrate Brianza Italy

Germanium-rich alloys of Ge2Sb2Te5 have been developed to improve the reliability and performance of embedded phase change memory (PCM). Fast program operation, integration in the back end of the line (BEOL), and stability under high-temperature profiles make PCM with Ge-rich GST one of the prominent technologies for the embedded memory market. The Ge-rich alloy composition requires an initialization pulse, called forming, to uniformize the electrical characteristic of the cells from the virgin state at the end of production. This work will analyze the key features of virgin state Ge-rich GST PCM devices. Electron microscopy images and temperature-dependent electrical resistance data are reported. A modeling framework, based on the energy landscape theory, is presented to reproduce the electrical behavior as a function of temperature on the basis of the observed Ge-rich GST microstructure. The impact of the BEOL process on the poly-crystalline virgin state is assessed and the model is extended accordingly. The new model provides a valuable simulation tool for material-and physics-based simulation of PCM based on Ge-rich GST for memory, computing, and hardware security.

关键词： Phase change materials resistance Germanium Temperature measurement Chalcogenides Temperature distribution Computational modeling Embedded memory Ge-rich GST landscape modeling phase change memory (PCM) pristine state virgin

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Algorithm-Aware digital design for Analog-on-Top Chips: An ASK demodulator Comparative Study

Algorithm-Aware Digital Design for Analog-on-Top Chips: An A...

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IEEE SENSOrS

作者： Felice Tecce Matteo Abate Francesco del Prete Giovanni Amedeo Cirillo Claudio Parrella Marco Castellano STMicroelectronics AMS R&D Arzano NA Italy STMicroelectronics AMS R&D Cornaredo MI Italy

design of application-specific digital Signal Processing elements is related to the implementation of an algorithm, initially implemented in software. The time-to-design can be extremely long, especially when design space exploration must be done and hardware description must be written from scratch. different tools are nowadays available to generate a register Transfer Level (rTL) circuit and corresponding testbenches from software, even with routines for design space exploration. These tools are based on High-Level Synthesis (HLS) and High-Language Hardware description (HLH) paradigms. This work compares the rTLs for an integrated digital Amplitude Shift Keying demodulator, employable either for the recognition of messages detected by transducers or in sensors networks. SystemVerilog, Catapult HLS from Siemens EdA and SpinalHdL were considered for canonical hardware description, HLS and HLH respectively. Synthesis results with three stmicroelectronics technologies prove that the rTLs automatically generated by SpinalHdL and Catapult provide area results comparable with those obtained with from-scratch design in SystemVerilog and can also achieve better performance in terms of dynamic power.

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deep Learning Car driver Motion Magnified Saccadic Eye Movements for Advanced driving Assistance System

Deep Learning Car Driver Motion Magnified Saccadic Eye Movem...

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IEEE International Conference on Fuzzy Systems (FUZZ-IEEE) / IEEE World Congress on Computational Intelligence (IEEE WCCI) / International Joint Conference on Neural Networks (IJCNN) / IEEE Congress on Evolutionary Computation (IEEE CEC)

作者： rundo, Francesco Messina, Angelo Calabretta, Michele dilonardo, Matteo Coffa, Salvatore Spampinato, Concetto STMicroelectronics ADG R&D Power & Discretes Catania Italy STMicroelectronics IPF Div Catania Italy Univ Catania PerCe Lab DIEEI Catania Italy

ISBN: (数字)9781728186719

ISBN: (纸本)9781728186719

Automotive industry is making rapid progress in the development of next generation cars with higher levels of autonomy and intelligent assistance. Although the general advanced driver assistance system (AdAS) architecture is widely discussed, limited interaction between driver and these intelligent solutions sometimes make these approaches inefficient. For these reasons, the authors triggered an investigation about driver's feedback in relation to the assistance inputs provided by the AdAS technologies. In this context, the goal of this proposal is the design of an intelligent system that learns from the analysis of the car driver eyes saccadic movements, the correlated level of attention towards the salient driving scene. With this approach, we enabled a visual-feedback system which learns the driver eye's fixing dynamic associated to the analyzed driving scene. Through ad-hoc enhanced motion magnification technique, the authors were able to amplify the mentioned saccadic dynamics in order to allow a downstream deep classifier to associate this physiological behavior with the corresponding level of the driver attention. The collected performances (over 97%) confirmed the effectiveness of the proposed method.

关键词： deep Learning Motion Magnification AdAS driver eye saccadic movements

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A Two-Stage CMOS Amplifier Performing High degree of Stability for All Capacitive Load

A Two-Stage CMOS Amplifier Performing High Degree of Stabili...

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IEEE International Symposium on Circuits and Systems (ISCAS)

作者： Alessandro Bertolini Germano Nicollini AMS R&D Design Department STMicroelectronics Milan Italy

ISBN: (数字)9798350330991

ISBN: (纸本)9798350331004

This paper presents the conception, design and realization of a fully-differential two-stage CMOS amplifier that is unconditionally stable for any value of the capacitive load. This is simply achieved by sending a scaled replica of the output stage current to the amplifier virtual ground such as to create a Left Half-Plane (LHP) zero in the loop-gain that either cancels or tracks the output pole in all process, voltage, and temperature (PVT) conditions. Consequently, from a stability point of view the amplifier behavior resembles that of a single-pole OTA. Starting from an existing two-stage gain-programmable amplifier, designed in a 0.18μm Bipolar-CMOS-dMOS (BCd) process, that was able to drive only 10pF without incurring into stability issues, a simple circuit has been added to extend the stability to any capacitive load value. Measurements, given with loads ranging from 0pF to 100nF, show high degree of stability in any load conditions. In the used 0.18μm BCd technology, silicon area and current consumption of the extra circuit are only 0.0004mm 2 and 2μA, respectively, with a 5 V power supply.

关键词： Tracking loops Power supplies Stability analysis Silicon Circuit stability Land surface temperature Thermal stability

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Innovative solutions to make driving safer, greener and more connected 7

Innovative solutions to make driving safer, greener and more...

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IEEE International Symposium on Measurements and Networking (M and N)

作者： Cascino, Salvatore Saggio, Mario Imbruglia, Antonio Scrimizzi, Filippo Pulvirenti, Mario Tumminia, Alessandro Sicurella, Gaetano Magagnini, Vincenzo Alessandro Paparo, Mario STMicroelectronics QMT Power & Discrete Technol R&D Str Primosole 50 I-95121 Catania Italy STMicroelectronics LGI LV & STi2 GaN Solut R&D & Innovat Str Primosole 50 I-95121 Catania Italy STMicroelectronics APMS Low Voltage Integrated Power LVIP Div Str Primosole 50 I-95121 Catania Italy Fdn Samothrace Sicilian MicronanoTech Res & Innov Innovat Ecosyst ECS00000022 Via Santa Sofia 97 I-95123 Catania Italy

ISBN: (纸本)9798350370546;9798350370539

The automotive industry is experiencing significant changes. The evolving world is creating new challenges and opportunities for power electronics. There is a strong need to reduce greenhouse gas emissions and the consumption of fossil fuels. To achieve this, electric mobility and safety must be improved through the introduction of electronics and solutions that enable a wide range of new services. Thanks to the introduction of new Wide Bandgap (WBG) materials, such as Silicon Carbide (SiC) and Gallium Nitride (GaN), along with intelligent design on Silicon (Si), technology is fulfilling the promise of more sustainable mobility and safer driving experiences. This paper will address some of the activities from the first year of the SAMOTHrACE PNrr-funded innovation project for the smart mobility thematic area, with a focus on the innovations enabled by SiC, GaN, and Si technologies.

关键词： SiC GaN Si Lidar Flyback converter E-Fuse Power Module Smart Mobility Power Electronics

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