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arXiv 2023年

作者： Kobayashi, Kazuma Gu, Lin Hataya, ryuichiro Mizuno, Takaaki Miyake, Mototaka Watanabe, Hirokazu Takahashi, Masamichi Takamizawa, Yasuyuki Yoshida, Yukihiro Nakamura, Satoshi Kouno, Nobuji Bolatkan, Amina Kurose, Yusuke Harada, Tatsuya Hamamoto, ryuji Division of Medical AI Research and Development National Cancer Center Research Institute 5-1-1 Tsukiji Chuo-ku Tokyo104-0045 Japan Cancer Translational Research Team RIKEN Center for Advanced Intelligence Project 1-4-1 Nihonbashi Chuo-ku Tokyo103-0027 Japan Machine Intelligence for Medical Engineering Team RIKEN Center for Advanced Intelligence Project 1-4-1 Nihonbashi Chuo-ku Tokyo103-0027 Japan Research Center for Advanced Science and Technology The University of Tokyo 4-6-1 Komaba Meguro-ku Tokyo153-8904 Japan Medical Data Deep Learning Team Advanced Data Science Project RIKEN Information R&D and Strategy Headquarters 1-4-1 Nihonbashi Chuo-ku Tokyo103-0027 Japan Department of Experimental Therapeutics National Cancer Center Hospital 5-1-1 Tsukiji Chuo-ku Tokyo104-0045 Japan Department of Diagnostic Radiology National Cancer Center Hospital 5-1-1 Tsukiji Chuo-ku Tokyo104-0045 Japan Department of Neurosurgery and Neuro-Oncology National Cancer Center Hospital 5-1-1 Tsukiji Chuo-ku Tokyo104-0045 Japan Department of Colorectal Surgery National Cancer Center Hospital 5-1-1 Tsukiji Chuo-ku Tokyo104-0045 Japan Department of Thoracic Surgery National Cancer Center Hospital 5-1-1 Tsukiji Chuo-ku Tokyo104-0045 Japan Radiation Safety and Quality Assurance Division National Cancer Center Hospital 5-1-1 Tsukiji Chuo-ku Tokyo104-0045 Japan Division of Research and Development for Boron Neutron Capture Therapy National Cancer Center Exploratory Oncology Research & Clinical Trial Center 5-1-1 Tsukiji Chuo-ku Tokyo104-0045 Japan Medical Physics Laboratory Division of Health Science Graduate School of Medicine Osaka University Yamadaoka 1-7 Osaka Suita-shi565-0871 Japan Department of Surgery Kyoto University Graduate School of Medicine 54 Shogoin Kawahara-cho Sakyo-ku Kyoto606-8507 Japan

The amount of medical images stored in hospitals is increasing faster than ever;however, utilizing the accumulated medical images has been limited. This is because existing content-based medical image retrieval (CBMIr) systems usually require example images to construct query vectors;nevertheless, example images cannot always be prepared. Besides, there can be images with rare characteristics that make it difficult to find similar example images, which we call isolated samples. Here, we introduce a novel sketch-based medical image retrieval (SBMIr) system that enables users to find images of interest without example images. The key idea lies in feature decomposition of medical images, whereby the entire feature of a medical image can be decomposed into and reconstructed from normal and abnormal features. By extending this idea, our SBMIr system provides an easy-to-use two-step graphical user interface: users first select a template image to specify a normal feature and then draw a semantic sketch of the disease on the template image to represent an abnormal feature. Subsequently, it integrates the two kinds of input to construct a query vector and retrieves reference images with the closest reference vectors. Using two datasets, ten healthcare professionals with various clinical backgrounds participated in the user test for evaluation. As a result, our SBMIr system enabled users to overcome previous challenges, including image retrieval based on fine-grained image characteristics, image retrieval without example images, and image retrieval for isolated samples. Our SBMIr system achieves flexible medical image retrieval on demand, thereby expanding the utility of medical image databases. Copyright © 2023, The Authors. All rights reserved.

关键词： Search engines

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retraction notice to "Analysis of Conocurvone, Ganoderic acid A and Oleuropein molecules against the main protease molecule of COVId-19 by in silico approaches: Molecular dynamics docking studies" [Engineering Analysis with Boundary Elements volume 150 (2023) Pages 583-598]

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Engineering analysis with boundary elements 2023年 156卷 239页

作者： Quynh Hoang Le Bahareh Farasati Far S Mohammad Sajadi Bahar Saadaie Jahromi Sogand Kaspour Bilal Cakir Zahra Abdelmalek Mustafa Inc Institute of Research and Development Duy Tan University Da Nang Vietnam. School of Medicine and Pharmacy Duy Tan University Da Nang Vietnam. Department of Chemistry Iran University of Science and Technology Tehran Iran. Department of Nutrition Cihan University-Erbil Kurdistan Region Iraq. Biological Science Department Western Michigan University 1903W Michigan Avenue Kalamazoo MI 49008-5410 United States. Department of Paramed Tehran University of Medical Science Tehran Iran. Halal Food R&D Center Istanbul S. Zaim University (IZÜ) Halkalı Küçükçekmece Istanbul Turkey. IZÜ Food and Agricultural Research Center (GTUAM) Halkalı Campus Küçükçekmece Istanbul 34303 Turkey. Science Faculty Department of Mathematics Firat University Elazig 23119 Turkey. Department of Medical Research China Medical University Taichung 40402 Taiwan.

[This retracts the article dOI: 10.1016/***.2023.02.043.].

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Atomic-scale ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors

Research Square

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research Square 2021年

作者： Cheema, Suraj S. Shanker, Nirmaan Wang, Li-Chen Hsu, Cheng-Hsiang Hsu, Shang-Lin Liao, Yu-Hung Jose, Matthew San Gomez, Jorge Li, Wenshen Bae, Jong-Ho Volkman, Steve Kwon, daewoong rho, Yoonsoo Pinelli, Gianni rastogi, ravi Pipitone, dominick Stull, Corey Cook, Matthew Tyrrell, Brian Stoica, Vladimir A. Zhang, Zhan Freeland, John W. Tassone, Christopher J. Mehta, Apurva Soheli, Ghazal Thompson, david Suh, dong Ik Koo, Won-Tae Nam, Kab-Jin Jung, dong Jin Song, Woo-Bin Lin, Chung-Hsun Nam, Seunggeol Heo, Jinseong Grigoropoulos, Costas P. Shafer, Padraic Fay, Patrick ramesh, ramamoorthy Ciston, Jim datta, Suman Mohamed, Mohamed Hu, Chenming Salahuddin, Sayeef Department of Materials Science and Engineering University of California BerkeleyCA United States Department of Electrical Engineering and Computer Sciences University of California BerkeleyCA United States Department of Electrical Engineering University of Notre Dame Notre DameIN United States Applied Science & Technology University of California BerkeleyCA United States Laser Thermal Laboratory Department of Mechanical Engineering University of California BerkeleyCA United States Lincoln Laboratory Massachusetts Institute of Technology LexingtonMA United States Department of Materials Science and Engineering Pennsylvania State University University ParkPA United States Advanced Photon Source Argonne National Laboratory LemontIL United States Stanford Synchrotron Radiation Lightsource SLAC National Accelerator Laboratory Menlo ParkCA United States Applied Materials Santa ClaraCA United States SK Hynix Inc. Gyeonggi-do Icheon17336 Korea Republic of Semiconductor R&D Center Samsung Electronics Gyeonggi-do 445-330 Korea Republic of Logic Technology Development Intel Corporation HillsboroOR97124 United States Samsung Advanced Institute of Technology Samsung Electronics Gyeonggi-do 445-330 Korea Republic of Advanced Light Source Lawrence Berkeley National Laboratory BerkeleyCA United States Department of Physics University of California BerkeleyCA United States Materials Sciences Division Lawrence Berkeley National Laboratory BerkeleyCA United States National Center for Electron Microscopy Molecular Foundry Lawrence Berkeley National Laboratory BerkeleyCA United States

With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage1. This led to the adoption of high-κ dielectric HfO2 in the gate stack in 20082, which remains as the material of choice to date. Here, we report HfO2-ZrO2 superlattice heterostructures as a gate stack, stabilized with mixed ferroelectric-antiferroelectric order, directly integrated onto Si transistors and scaled down to ∼ 20 Å, the same gate oxide thickness required for high performance transistors. The overall EOT (equivalent oxide thickness) in metal-oxide-semiconductor capacitors is equivalent to ∼ 6.5 Å effective SiO2 thickness, which is, counterintuitively, even smaller than the interfacial SiO2 thickness (8.0-8.5 Å) itself. Such a low effective oxide thickness and the resulting large capacitance cannot be achieved in conventional HfO2-based high-κ dielectric gate stacks without scavenging the interfacial SiO2, which has adverse effects on the electron transport and gate leakage current3. Accordingly, our gate stacks, which do not require such scavenging, provide substantially lower leakage current and no mobility degradation. Therefore, our work demonstrates that HfO2-ZrO2 multilayers with competing ferroelectric-antiferroelectric order, stabilized in the 2 nm thickness regime, provides a new path towards advanced gate oxide stacks in electronic devices beyond the conventional HfO2-based high-κ dielectrics. © 2021, CC BY.

关键词： Silica

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Corrosion Mechanisms of Cu Wire Bonding on Al Pads

Corrosion Mechanisms of Cu Wire Bonding on Al Pads

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IEEE Electronic Components and technology Conference

作者： Wentao Qin Tom Anderson denise Barrientos Harold Anderson George Chang Technology Assessment and Characterization Lab ON Semiconductor Phoenix AZ USA Corporate R&D Packaging Development ON Semiconductor Phoenix AZ USA Corporate Program Management ON Semiconductor Phoenix AZ USA

In microelectronic devices, Cu wire bonding on Al-alloy pads suffers from reliability failures that are due to the corrosion of intermetallic compounds (IMC) at the bonding interface. The issue is exacerbated in harsh operation environments with high temperature and high humidity. We studied Cu wire bonding on AISi bond pads that was packaged and subjected to an un-biased Highly Accelerated Stress Test (uHAST). The most Cu-rich IMC at the bonding interface associated with the failure had been completely corroded, while the least Cu-rich IMC survived. The passivity of the surface oxide of an IMC is compromised likely due to the inherent structural incompatibility between the component aluminum oxide and copper oxide, and consequently the loss of structural integrity of the surface oxide, which makes the IMC less resistant to corrosion than both Al and Cu. The Cu/Al ratio of an IMC decides its ratio of the cathode-to-anode surface areas exposed to the electrolyte, and is expected to be the major factor to determine the corrosion rate of the IMC. The most Cu-rich IMC accordingly exhibits the highest corrosion rate among the IMC;in addition, its interface with the Cu wire has the highest Cu/Al ratio and therefore the highest corrosion rate in the film stack at the bonding interface. Therefore the most Cu-rich IMC is subjected to corrosions along not only the laterally inward direction, but also the vertically downward direction, which exacerbates the preferential corrosion of it. The mechanisms correlate with the widely reported reliability improvements induced by Pd-coating of the wire and other methods. On the outlook to address the reliability issue, both coating of the wire with Ni and replacing Cu wires with Al wires possesses the potential to improve the corrosion resistance, since Ni behaves thermodynamically similar to Pd in the ternary system with Cu and Al, and there will be no IMC formation with the use of Al wires. Both methods, nonetheless, are yet to be v

关键词： Copper wire bonding corrosion reliability failure intermetallic compound IMC

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Numerical investigation on the sealing performance of pipeline inspection gauge (PIG) Crossing Elbows

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IOP Conference Series: Earth and Environmental Science 2020年第1期585卷

作者： Jinxu Jiang Yang Kang Chunxiao Jiao Haoyu Shi Kai Wang Hong Zhang Xiaoben Liu National Engineering Laboratory for Pipeline Safety/MOE Key Laboratory of Petroleum Engineering/Beijing Key Laboratory of Urban Oil and Gas Distribution Technology China University of Petroleum-Beijing 102249 Beijing China Beijing Key Laboratory of Pipeline Critical Technology and Equipment for Deepwater Oil & Gas Development Beijing Institute of Petrochemical Technology 102627 Beijing China Petrochina Pipeline R&D Center 065000 Hebei China

The pipeline inspection gauge (PIG) is one of the most popular pigging equipment. In recent years, blocking and stagnation accidents during PIG's operation process seriously affect the safe operation of energy pipelines. In order to investigate the sealing performance of the PIG's rubber cup, a four cup drain PIG's movement in elbow was considered as a prototype in this study. Based on a validated finite element model, the contact stress between sealing cups and the pipe wall and pressure relief area of cup are obtained. The results indicate that when the PIG is operated in a small curvature elbow, the sealing performance of the cup is obviously weakened. Increasing the sealing cup interference and the differential pressure of the sealing cup surface can enhance the sealing performance of the PIG cup. When the PIG's sealing cup is detached from the inner wall of the pipe, reducing the elastic modulus of the pig's cup material can be a reasonable measure to enhance the sealing performance of PIG cups.

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Crack size dependency of shear-mode fatigue threshold in bearing steel subjected to continuous hydrogen charging

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Procedia Structural Integrity 2019年 14卷 11-17页

作者： Y. Akaki T Matsuo Y. Nishimura S. Miyakawa Graduate School of Engineering Fukuoka University 8-19-1 Nanakuma Jonan-ku Fukuoka 814-0180 Japan Development of Mechanical Engineering Fukuoka University 8-19-1 Nanakuma Jonan-ku Fukuoka 814-0180 Japan Institute of Materials Science and Technology Fukuoka University 8-19-1 Nanakuma Jonan-ku Fukuoka 814-0180 Japan Materials Engineering R&D Division DENSO CORPORATION Japan 1-1 Syowa-cho Kariya Aichi 448-8661 Japan

Premature delamination failure, characterized by the white structure flaking (WSF) or the white etching crack (WEC), often occurs in rolling element bearings and it deteriorates the durability of bearing substantially. It is known that this failure is caused by shear-mode (Mode II and Mode III) crack growth in conjunction with evolution and invasion of hydrogen into material during operation. To ensure the structural integrity associated with rolling element bearing, it is important to clarify the effect of hydrogen on the shear-mode fatigue crack growth behavior near the threshold level. In our previous study, the effect of hydrogen on the shear-mode fatigue crack growth behavior in a bearing steel of JIS SUJ2 was examined near the threshold level. Consequently, it was shown that the threshold stress intensity factor (SIF) range for shear-mode fatigue crack growth decreased significantly by action of hydrogen. However, the investigation was made only for a crack with a surface length of about 900 mm. To thoroughly understand the critical condition for delamination failure, it is important to investigate the crack size dependency of the threshold level for a shear-mode small fatigue crack in the presence of hydrogen. In the present study, correspondingly, the threshold SIF ranges for a shear-mode crack with different length were additionally measured in the same material by using a novel technique that enables continuous charging of hydrogen in a specimen during long-term fatigue test. Then, a clear reduction in crack growth rate and a crack size dependency of the threshold SIF range were observed under the environmental condition of continuous hydrogen charging.

关键词： Shear-mode fatigue crack Bearing steel Threshold level Crack size dependency Continuous hydrogen charging

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Helium nano-bubble bursting near the nickel surface

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Chinese Physics B 2017年第11期26卷 155-161页

作者：龚恒风刘敏高飞李锐严岩黄恒刘彤任啟森 ATF R&D Accident Tolerant Fuel Research and Development China Nuclear Power Technology Research Institute Co. Ltd Shanghai Institute of Applied Physics Chinese Academy of Sciences Division of Nuclear Materials and Engineering Key Laboratory of Interfacial Physics and Technology Chinese Academy of Sciences Department of Mechanical Engineering University of Michigan

We have investigated the expansion and bursting of a helium nano-bubble near the surface of a nickel matrix using a molecular dynamics simulation. The helium atoms erupt from the bubble in an instantaneous and volcano-like process,which leads to surface deformation consisting of cavity formation on the surface, along with modification and atomic rearrangement at the periphery of the cavity. during the kinetic releasing process, the channel may undergo the ＂open＂ and＂close＂ states more than once due to the variation of the stress inside the nano-bubble. The ratio between the number of helium atoms and one of vacancies can directly reflect the releasing rate under different temperatures and crystallographic orientation conditions, respectively. Moreover, a special relationship between the stress and He-to-vacancy ratio is also determined. This model is tested to compare with the experimental result from Hastelloy N alloys implanted by helium ions and satisfactory agreement is obtained.

关键词： molecular dynamics nano-bubbles near surface

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Carrier lifetimes in 4H-SiC epitaxial layers on the C-face enhanced by carbon implantation

Carrier lifetimes in 4H-SiC epitaxial layers on the C-face e...

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International Conference on Silicon Carbide and related Materials, ICSCrM 2017

作者： Kushibe, Mitsuhiro Nishio, Johji Iijima, ryosuke Miyasaka, Akira Asamizu, Hirokuni Kitai, Hidenori Kosugi, ryoji Harada, Shinsuke Kojima, Kazutoshi Corporate R&D Center Toshiba Corporation KawasakiKanagawa212-8582 Japan Advanced Power Electronics Research Center Advanced Industrial Science and Technology TsukubaIbaraki305-8568 Japan Showa Denko K. K Shimokagemori ChichibuSaitama369-1893 Japan Research and Development Division ROHM Co. Ltd UkyoKyoto615-8585 Japan

ISBN: (纸本)9783035711455

Carrier lifetime in low carrier concentration 4H-SiC epitaxial layers grown on the C-face was enhanced by using carbon implantation and post annealing. The measured carrier lifetime increased with the thickness of the epitaxial layer and was 11.4 μs for the 150 μm thick epitaxial layer. The internal carrier lifetime was estimated as 21 μs from the dependence of the measured carrier lifetime on the epitaxial layer thickness. This value is almost comparable to the reported values of the internal carrier lifetime for the layers grown on the Si-face. © 2018 Trans Tech Publications, Switzerland.

关键词： Silicon carbide

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Compensation Method of Gyroscope Bias Hysteresis Error with Temperature and rate of Temperature using deep Neural Networks

Compensation Method of Gyroscope Bias Hysteresis Error with ...

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International Conference on Control, Automation and Systems

作者： Yeong-Bin Seo Haesung Yu Myeong-Jong, Yu Sang Jeong Lee Weapon System Engineering University of Science and Technology Daejeon Korea The 3rd R&D Institute Agency for Defense Development Department of Electronics Engineering Chungnam National University Daejeon Korea

ISBN: (纸本)9781538670804;9788993215168

In this paper, a new compensation method for hysteresis bias error of the ring laser gyroscope (rLG) is proposed. deep neural networks using temperature and rate of temperature is applied to obtain the rLG bias. In the process of entering the deep neural networks, temperature and rate of temperature are split into several factors for higher accuracy. Through entering these factors to the deep neural networks, more accurate estimation performance is achieved than simply entering the temperature and rate of temperature. The rLG bias estimating performance of deep neural network is evaluated through comparing with various methods -3rd order function, classic rate of temperature method, and radial basis function network (rBFN). The experimental results show that the proposed compensation method has more precise calibration performance than others.

关键词： Error compensation rLG hysteresis bias Neural network Gyroscope bias radial basis function network

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Grinding feed control based on workpiece deflection and on-machine measurement of workpiece stiffness 20

Grinding feed control based on workpiece deflection and on-m...

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20th International Symposium on Advances in Abrasive technology, ISAAT 2017

作者： Yoritsune, Masashi Tano, Makoto Process Technology R&D Department Research and Development Headquarters JTEKT CORPORATION 1-1 Asahi-machi Kariya Aichi448-8652 Japan

In grinding process, the actual depth of cut lags behind the command depth of cut because of workpiece deflection. In order to achieve the required machining accuracy, it is necessary to stabilize the actual cutting depth which is proportional to workpiece deflection. As a result, conventional grinding process needs a long machining time. In this research, we have developed the grinding system to stabilize the amount of workpiece deflection in a short time. In this system, the control logic was built to compensate the grinding feed rate based on workpiece deflection, which was predicted from the workpiece stiffness and the grinding force. Grinding experiment was carried out for the evaluation of developed grinding system by using cylindrical grinders. In addition, on-machine measuring method of workpiece stiffness was proposed for flexible manufacturing system. This paper describes the grinding experiment of the developed grinding system and measurement result of workpiece stiffness. © ISAAT *** right reserved.

关键词： Grinding (machining)

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