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International Electron devices Meeting (IEdM)

作者： J. M. Park Y. S. Hwang S.-W. Kim S. Y. Han J. S. Park J. Kim J. W. Seo B. S. Kim S. H. Shin C. H. Cho S. W. Nam H. S. Hong K. P. Lee G. Y. Jin E. S Jung DRAM Technology Development Team Samsung Electronics Co. Hwasung-City Gyounggi-Do Korea DRAM Process Architecture Team Samsung Electronics Co. Hwasung-City Gyounggi-Do Korea Process Development Team Samsung Electronics Co. Hwasung-City Gyounggi-Do Korea Advanced Core Equipment Engineering & Development P/J Samsung Electronics Co. Hwasung-City Gyounggi-Do Korea DRAM Product & Technology Center Samsung Electronics Co. Hwasung-City Gyounggi-Do Korea Semiconductor R&D Center Samsung Electronics Co. Hwasung-City Gyounggi-Do Korea

For the first time, 20nm drAM has been developed and fabricated successfully without extreme ultraviolet (EUV) lithography using the honeycomb structure (HCS) and the air-spacer technology. The cell capacitance (Cs) can be increased by 21% at the same cell size using a novel low-cost HCS technology with one argon fluoride immersion (ArF-i) lithography layer. The parasitic bit-line (BL) capacitance is reduced by 34% using an air-spacer technology whose breakdown voltage is 30% better than that of conventional technology.

关键词： random access memory Capacitors Lithography Capacitance Honeycomb structures Metals Computer architecture

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A conceptual paper on ICT as national strategic resources toward national competitiveness

A conceptual paper on ICT as national strategic resources to...

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International Conference on Advanced Computer Science and Information System (ICACSIS)

作者： Basuki Yusuf Iskandar Fadhilah Mathar Agency of ICT R&D and Human Resources Development Ministry of Communication and Information Technology Republic of Indonesia

The conceptual paper adresses a question on how information and communication technology (ICT) is integratively managed as national strategic resources to be a key determinant to competitiveness. The sustainable competitive advantages are resulted in interrelated trends of technology, business, and industry regulated by government for meeting our national goals. When the external environment was and remain in a state of flux, the nation, as a bundle of resources, shall be more steady basis on which to define its nation and character building. The greater the rate of uncertainty in global environment, the more likely internal resources and capabilities will provide strong foundation for nation's resilence and souverignity.

关键词： Market research decision support systems Information technology Economics Education Technological innovation

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Experimental and Numerical Study of Moisture Effect on Warpage of Plastic Package

Experimental and Numerical Study of Moisture Effect on Warpa...

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The 15th International Conference on Electronic Packaging technology (ICEPT 2014) ) (第十五届电子封装技术国际会议)

作者： Yinglei Chen Maohua du Jianwei Zhou Tae Sub Chang Package Technology Development Team Samsung Semiconductor(China)R&D CO. LTD SuzhouChina

In this paper,the moisture effect on the warpage of plastic package is studied through experimental and numerical *** investigations have proved that polymer materials can expand after absorbing *** coefficient of moisture expansion(CME)is proposed to quantitatively describe polymer expansion caused by *** plastic package consists of epoxy molding compound(EMC)and PCB,both of which can easily absorb *** different amounts of moisture absorption in different materials can lead to different expansions,warpage of plastic package can change after moisture absorption,even when the temperature keeps *** the warpage and moisture are monitored during a series of *** the results show similar changing *** CME of EMC and BT core is tested through TGA/TMA *** is found that the CME increases with *** diffusion simulation is used to determine the moisture concentration change of EMC and BT core during the ambient *** results combined with CME are used to calculate the warpage change caused by moisture during the ambient *** simulation results agree with the experiments,verifying the moisture effect on warpage.

关键词： moisture effect warpage change plastic package coefficient of moisture expansion(CME) TGA/TMA method numerical analysis

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Influences of iron loss coefficients estimation on the prediction of iron losses for variable speed motors

Influences of iron loss coefficients estimation on the predi...

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IEEE International Electric Machines and drives Conference

作者： Jonathan Juergens Bernd Ponick Oliver Winter Antonio Fricasse Institute for Drive Systems and Power Electronics Leibniz-Universitat Hannover AIT Austrian Institute of Technology Mobility Department Electric Drive Technologies Centro Ricerche Fiat S.C.p.A. R&D EMEA Product Development Vehicle Research & Innovation

ISBN: (纸本)9781479979424

This paper addresses the influence of the estimation of hysteresis, eddy current and excess loss coefficients on the prediction of the overall iron losses in traction motors. Two standard iron loss models (according to Bertotti and Jordan) are presented and it is examined how the determination of the corresponding loss coefficients is effecting the iron loss calculation for variable speeds. It is shown that the accuracy of the iron loss calculation does not mainly depend on the number of iron loss terms in the model but rather depends on the computation of the corresponding coefficients. To reduce the uncertainty of the iron loss calculation, common curve fitting methods have to be used carefully. Provided that constant coefficients and exponents of the loss component terms are used, the resulting coefficients estimation by means of curve fitting methods depends on the considered frequency range of the measured losses given by the electrical steel manufacturer. Three different FEM analysis tools are used to compare the iron loss calculations for a simplified electrical machine model and a permanent magnet assisted synchronous reluctance machine (PMaSyrM) model.

关键词： Bertotti equation Curve fitting Eddy current Excess losses Hysteresis Iron losses Jordan equation Least square method Loss coefficient

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26th Annual Computational Neuroscience Meeting (CNS*2017) of the Organization for Computational Neuroscience Antwerp, Belgium, July 15-20, 2017

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BMC NEUrOSCIENCE 2017年第SUPPL 1期18卷 59-59页

作者： [Anonymous] Indiana University Purdue University Indianapolis Indianapolis IN 46032 USA Stark Neurosciences Research Institute Indiana University School of Medicine Indianapolis IN 46032 USA Department of Mathematics East Carolina University Greenville NC 27858 USA Jülich Supercomputing Centre Forschungszentrum Jülich 52425 Jülich Germany Future Systems Swiss National Supercomputing Centre 8092 Zurich Switzerland User Engagement and Support Swiss National Supercomputing Centre 6900 Lugano Switzerland Institut de Neurosciences des Systèmes Aix Marseille Univ 13005 Marseille France Simulation Lab Neuroscience Forschungszentrum Jülich Jülich Germany Department of Experimental Psychology Ghent University 9000 Ghent Belgium Donders Center for Cognitive Neuroimaging Radboud University 6525HR Nijmegen The Netherlands Department of Electrical Computer and Energy Engineering University of Colorado Boulder CO 80309 USA Department of Neurosurgery Johns Hopkins School of Medicine Baltimore MD 21287 USA Department of Neurology Johns Hopkins School of Medicine Baltimore MD 21287 USA Department of Otolaryngology Johns Hopkins School of Medicine Baltimore MD 21287 USA INSERM U968 Paris France Sorbonne Universités UPMC University Paris 06 UMR_S 968 Institut de la Vision Paris France CNRS UMR_7210 Paris France Department of Computer Architecture and Technology University of Granada (CITIC) Granada Spain Sorbonne Universités UPMC Univ Paris 06 INSERM CNRS Institut de la Vision Paris France Department of Adaptive Machine Systems Osaka University Osaka Japan Department of Computer Science University of Cergy-Pontoise Cergy-Pontoise France Department of Physics and Astronomy College of Charleston Charleston SC 29424 USA School of Physics Faculty of Science University of Sydney Sydney NSW 2006 Australia Center of Excellence for Integrative Brain Function Australian Research Council Sydney Australia Max Planck Institute for Human Cognitive and Brain Sciences Saxony Lei

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Operating principle verification and scaling benefits of SGLC eNVM

Operating principle verification and scaling benefits of SGL...

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device research Conference

作者： Sung-Kun Park Nam-Yoon Kim Eun-Mee Kown Sang-Yong Kim In-Wook Cho Kyung-dong Yoo System IC division Technology Development Team R&D division SK hynix Inc. Cheongju-si Chungbuk KOREA

The authors demonstrated and verified the operation of a SGLC eNVM cell using 3d and 2d TCAd simulations. In addition, we have explained the benefits of the SGLC NVM cell as CMOS process design rules shrink. The novel SGLC cell shows a smaller size than 6T SrAM for beyond the 65 nm technology node. The SGLC cell shows ideal characteristics for eNVM, such as a fast program speed, multi-time programmable support, over-erase free features as well as an SrAM comparable cell size without any additional process steps.

关键词： Couplings random access memory Three-dimensional displays Nonvolatile memory Logic gates Programming Solid modeling

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Abstracts from the Food Allergy and Anaphylaxis Meeting 2016 Abstracts

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CLINICAL ANd TrANSLATIONAL ALLErGY 2017年第SUPPL 1期7卷 10-10页

作者： [Anonymous] Department of Pediatrics Children’s Hospital Roubaix France Division of Pulmonology and Allergology Department of Pediatrics Faculty of Medicine and Children’s Hospital Lille France Allergy Vigilance Network Vandoeuvre les Nancy France Université Lille 2 CHU Lille EA 2694 - Santé Publique: épidémiologie et qualité des soins Lille France Biostatistics Unit Maison Régionale de la Recherche Clinique CHRU Lille Lille France Department of Allergology Emile Durkheim Hospital Epinal France Centre d’Epidémiologie sur les Causes Médicales de Décès INSERM CHU de Bicêtre Le Kremlin-Bicêtre France The Allergy Vigilance Network University Hospital Nancy Nancy France Pediatric Pulmonology and Allergy Department Hôpital Jeanne de Flandre CHU Lille Lille France Charité - Universitätsmedizin Berlin Berlin Germany Institute for Social Medicine Epidemiology and Health Economics Charité - Universitätsmedizin Berlin Berlin Germany Institute of Social Medicine Epidemiology and Health Economics Charité Universitätsmedizin Berlin Berlin Germany Department of Dermatology and Allergology Comprehensive Allergy Center Charité Charité – Universitätsmedizin Berlin Berlin Germany Department of Dermatology and Allergy Allergie-Centrum-Charité Charité-Universiätsmedizin Berlin Berlin Germany Department of Dermatology and Allergology Comprehensive Allergy Center Charité Charité Universitätsmedizin Berlin Berlin Germany University Hospital Basel Basel Switzerland Allergy Unit Department of Dermatology University Hospital Basel Switzerland Universitätsklinikum Salzburg Salzburg Austria Department of Dermatology and Allergy Centre Odense Research Center for Anaphylaxis (ORCA) Odense University Hospital Odense Denmark Odense University Hospital Odense Denmark Serviço de ImunoalergologiaCentro Hospitalar de São João E.P.E. Porto Portugal GRIAC Research Institute University of Groningen University Medical Center Groningen Groningen The Netherlands Serviço de Imunoalergologia Centr

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BSIM6 -- Benchmarking the Next-Generation MOSFET Model for rF Applications

BSIM6 -- Benchmarking the Next-Generation MOSFET Model for R...

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International Conference on VLSI design

作者： Anupam dutta Saurabh Sirohi Tamilmani Ethirajan Harshit Agarwal Yogesh Singh Chauhan richard Q. Williams Semicond. R&D Center IBM Bangalore India Semiconductor Research and Development Center IBM Bangalore India Indian Institute of Technology Kanpur India Semiconductor Research and Development Center IBM Burlington USA

BSIM6 is the new Compact Model Coalition (CMC) standard bulk MOSFET model. It offers excellent fitting capability, accurate rF/analog simulations, and similar implementation features of the small dimension effects as included in the popular BSIM4 model. These features make BSIM6 a very desirable candidate for future nano-MOSFET simulations. In this work we evaluate the capabilities of the model and perform benchmark tests to assess the strengths of the model. Bulk 90nm technology MOSFET data is used to extract BSIM6 for analog/rF specific applications. Industry standard benchmark tests have been performed and results shown against the hardware data (where applicable). The model is found to correlate very well with hardware data and passes all important model quality benchmark tests for analog/rF applications.

关键词： Semiconductor device modeling MOSFET radio frequency Benchmark testing Logic gates data models Mathematical model

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Wurtzite silicon as a potential absorber in photovoltaics: Tailoring the optical absorption by applying strain

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Physical review B 2015年第4期92卷 045207-045207页

作者： C. rödl T. Sander F. Bechstedt J. Vidal P. Olsson S. Laribi J.-F. Guillemoles Laboratoire des Solides Irradiés Ecole polytechnique CNRS CEA-DSM-IRAMIS Université Paris-Saclay 91128 Palaiseau cedex France Institut für Festkörpertheorie und -optik Friedrich-Schiller-Universität Max-Wien-Platz 1 07743 Jena Germany European Theoretical Spectroscopy Facility (ETSF) Institute for Research and Development of Photovoltaic Energy (IRDEP) UMR 7174 CNRS / EDF R&D / Chimie ParisTech 6 quai Watier 78401 Chatou France KTH Royal Institute of Technology Reactor Physics Roslagstullsbacken 21 SE-106 91 Stockholm Sweden NextPV International Joint Laboratory CNRS U. Bordeaux RCAST The University of Tokyo 4-6-1 Komaba Meguro-ku Tokyo 153-8904 Japan

We present ab initio calculations of the electronic structure and the optical properties of wurtzite Si (Si-IV). We find an indirect band gap of 0.95 eV (Γ5→M1) and an optically forbidden direct gap of 1.63 eV (Γ5→Γ10), which is due to a backfolding of the L1 state of Si in the diamond structure (Si-I). Optical absorption spectra including excitonic and local-field effects are calculated. Further, the effects of hydrostatic pressure, uniaxial strain, and biaxial strain on the absorption properties are investigated. Biaxial tensile strains enhance the optical absorption of Si-IV in the spectral range which is relevant for photovoltaic applications. High biaxial tensile strains (>4%) even transform Si-IV into a direct semiconductor.

关键词： WUrTZITE SILICON CHEMICAL potential PHOTOVOLTAIC power generation LIGHT absorption STrAINS & stresses (Mechanics)

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TSV technology and challenges for 3d stacked drAM

TSV technology and challenges for 3D stacked DRAM

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Symposium on VLSI technology

作者： Chang Yeol Lee Sungchul Kim Hongshin Jun Kyung Whan Kim Sung Joo Hong SK hynix DRAM Development Division Icheon-si Gyeonggi-do Korea SK hynix R&D Division Device & Integration Technology Group Icheon-si Gyeonggi-do Korea

ISBN: (纸本)9781479933334

A successful integration of Via-middle TSV process in drAM technology with major process issues is introduced. Fast TSV open/short detection and how to trade-off in choice repair scheme is discussed. Process development for TSV volume shrink required to reduce dynamic power for driving TSV. Fast Cu leak monitor method is essential to sustaining good quality and Fab process control.

关键词： Through-silicon vias random access memory Process control Metals Maintenance engineering Stacking Three-dimensional displays

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