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2012年全国轧钢生产技术会

作者： HUI Wei-jun 惠卫军 CHEN Si-lian 陈思联 YANG Wei-ning 杨伟宁 WANG Lian-hai 王连海 dAI Guan-wen 戴观文 National Engineering Research Center of Advanced Steel Technology Central Iron & Steel Research Ins 钢铁研究总院先进钢铁材料技术国家工程研究中心北京100081 Special Steel R&D Center Baoshan Iron&Steel Co. Ltd.Research InstituteShanghai 200940 China 宝钢股份研究院特钢技术中心上海200940 R & D Center Fushun Special Steel Co.Ltd. Fushtm Liaoning 113001 China 抚顺特殊钢股份有限公司技术中心辽宁抚顺113001 Development Department Shijiazhuang Iron & Steel Co. Ltd Shijiazhuang Hebei 050031 China 石家庄钢铁有限责任公司开发部河北石家庄050031

本文结合近年来国内外的发展趋势，从化学成分的精确稳定控制、硫化物控制、前轴、半轴和胀断连杆等典型品种用非调质钢的研发及非调质钢的长疲劳寿命化技术等方面对中国近年来非调质钢的部分研发工作进行了综合论述。为了进一步提高非... 详细信息

本文结合近年来国内外的发展趋势，从化学成分的精确稳定控制、硫化物控制、前轴、半轴和胀断连杆等典型品种用非调质钢的研发及非调质钢的长疲劳寿命化技术等方面对中国近年来非调质钢的部分研发工作进行了综合论述。为了进一步提高非调质钢的技术经济性，非调质钢的少无微合金化元素的低成本化、精确成分和尺寸控制是其中的重要发展方向。此外，随着冶金生产和零件制造技术的不断进步，为了替代调质处理的合结钢等以制造更多的保安件，具有更高的强韧性配合的贝氏体型非调质钢必将得到更多的应用。

关键词：非调质钢产品开发节能降耗冶金质量力学性能

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高速喷墨打印纸涂层表面性能研究

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中国印刷与包装研究 2011年第1期3卷 68-70页

作者： Author John Kettle Taina Lamminm aki Patrick Gane 许英(编译) VTT Technical Research Centre of Finland Tekniikantie 2 FI -02044 Espoo Finland Printing Technology TKK Vuorimiehentie 2 FI - 02150 Espoo Finland R＆D Omya Development AG CH-4665 Oftringen Switzerland 不详

在印刷领域,喷墨打印作为一种非接触式的打印方式,其市场份额正在逐渐上升。喷墨打印可用于家庭、办公,并在3d、电子和生物材料印刷方面有很大潜力。在高速喷墨打印中广泛应用的两种墨滴成形技术是,连续喷墨技术(CIJ)和按需喷墨技术(dOd... 详细信息

在印刷领域,喷墨打印作为一种非接触式的打印方式,其市场份额正在逐渐上升。喷墨打印可用于家庭、办公,并在3d、电子和生物材料印刷方面有很大潜力。在高速喷墨打印中广泛应用的两种墨滴成形技术是,连续喷墨技术(CIJ)和按需喷墨技术(dOd)。按照油墨的基质划分,喷墨打印机所用的油墨可分为水性油墨、溶剂型油墨、相变油墨和紫外光固化油墨;按着色剂划分,可分为颜料型和染料型油墨。油墨固着时会与纸基发生多种反应,这些反应与着色剂的固着和油墨液相的运动有关,会影响印品的质量。

关键词：打印纸喷墨打印机性能涂层喷墨技术打印方式市场份额生物材料

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Highly efficient InGaN/GaN blue LEd grown on Si (111) substrate

Highly efficient InGaN/GaN blue LED grown on Si (111) substr...

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Conference on Lasers and Electro-Optics (CLEO)

作者： Jun-Youn Kim Yongjo Tak Jae Won Lee Hyun-Gi Hong Suhee Chae Hyoji Choi Bokki Min Youngsoo Park Minho Kim Seongsuk Lee Namgoo Cha Yoonhee Shin Jong-ryeol Kim Jong-In Shim Photo-Electronic Device Group Semiconductor Device Lab Samsung Advanced Institute of Technology (SA1T) Suwon Republic of Korea Research and Development 2Team Samsung LED Company Limited Suwon South Korea R&D 2Team Samsung LED) Suwon Republic of Korea Department of Optical Engineering Sejong University Seoul Republic of Korea Department of Electrical and Computer Engineering Hanyang University Ansan Republic of Korea

ISBN: (纸本)9781557529107

For the first time, based on the high crystalline quality of n-GaN on Si template, highly efficient InGaN/GaN LEds grown on 4-inch silicon substrates comparable to those on sapphire substrates have been successfully demonstrated. At driving current of 350 mA, the overall output power of 1 × 1 mm 2 LEd chips exceeded 420 mW and forward voltage was 3.2 V under un-encapsulated condition, which is the best value among the reported values of blue LEd grown on Si substrates. The internal quantum efficiency of 76% at injection current of 350 mAwas measured.

关键词： Silicon Substrates Light emitting diodes Gallium nitride Epitaxial growth Power generation Semiconductor device measurement

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Phase Change Memory development trends

Phase Change Memory development trends

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IEEE International Memory Workshop (IMW)

作者： r. Bez S. Bossi B. Gleixner F. Pellizzer A. Pirovano G. Servalli M. Tosi R&D Technology Development Numonyx Milan Italy R&D Technology Development Numonyx B.V. San Jose CA USA

At the beginning of this decade, in early 2000, few disruptive technologies had been proposed to replace the industry standard Non-Volatile Memory (NVM) technology and to enlarge the Flash application base. A widely accepted statement was that if any technology will succeed, it will materialize in the next decade. As the end of this decade is approaching it can be noted that only one of the proposed technologies is demonstrating the capability to enter the broad NVM market and to be a mainstream memory for the next decade: the Phase Change Memory technology. PCM provides a new set of features interesting for novel applications, combining features of NVM and drAM and being at the same time a sustaining and a disruptive technology.

关键词： Phase change memory Phase change materials Nonvolatile memory diodes random access memory Application software Material storage P-n junctions CMOS technology research and development

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CMOS-MEMS Fabrication:with and beyond the Moore's Law

CMOS-MEMS Fabrication:with and beyond the Moore's Law

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第四届微米纳米技术“创新与产业化”国际研讨会暨物联网MEMS产业应用论坛

作者： Herb Huang MEMS & TSV Technology Development Corporate R&D Center

An industry-wide trend has become evident in recent years that the rapid deployment of MEMS system products into mobile phones and consumer electronics generates the paramount driving force from evolution to revolution in manufacturing efficiency as well as supply chain and cost structures besides beside continuous improvement in product design and *** "CMOS-MEMS" is no doubt recognized widely as the central scene of future advance and growth the MEMS industry, while implicating even a broad and profound stretch again from the Moore's Law.

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determination Factors of Strain-relaxed Complex domain Structure observed in Thick Epitaxial pb(Zr,Ti)O3Films

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MrS Online Proceedings Library (OPL) 2011年第1期1199卷 1199-F08-08-1199-F08-08页

作者： Hiroshi Nakaki Satoru Utsugi Takashi Fujisawa Mitsumasa Nakajima Yoshitaka Ehara Tomoaki Yamada Hitoshi Morioka Toshihiro Ifuku Hiroshi Funakubo nakaki.h.aa@titech.ac.jp Tokyo Institute of Technology Innovative and Engineered Materials Yokohama Japan utsugi.s.aa@m.titech.ac.jp Tokyo Institute of Technology Innovative and Engineered Materials Yokohama Japan fujisawa.t.ac@m.titech.ac.jp Tokyo Institute of Technology Innovative and Engineered Materials Yokohama Japan nakajima.m.ac@m.titech.ac.jp Tokyo Institute of Technology Innovative and Engineered Materials Yokohama Japan ehara.y.aa@m.titech.ac.jp Tokyo Institute of Technology Innovative and Engineered Materials Yokohama Japan yamada.t.al@m.titech.ac.jp Tokyo Institute of Technology Innovative and Engineered Materials Yokohama Japan hitoshi.morioka@bruker-axs.jp Tokyo Institute of Technology Innovative and Engineered Materials Yokohama Japan Ifuku.toshihiro@canon.co.jp Canon Inc. Nano materials Technology Development Center Corporate R&D Headquarters Tokyo Japan funakubo.h.aa@m.titech.ac.jp Tokyo Institute of Technology Innovative and Engineered Materials Yokohama Japan

Crystal structure change with the temperature was investigated for 3 m-thick (100)/(001)-oriented epitaxial PbTiO3 films grown on SrTiO3 substrates. Complex strain-relaxed domain structure labeled as Type III was observed and directly transformed to the cubic phase at about 490°C. This transition temperature and the lattice parameter (a and c- axes) change with the temperature well agreed with the reported data for the PbTiO3 powders. The volume fraction of the (001) orientations, Vc, was almost independent of the temperature up to the phase transition temperature. The tilting angles of the spots in Xrd plan view were almost the same with the estimated ones from the lattice parameters and the Vc. This suggests that the angle of the domains identified by the domain structure in Type III. This structure is mainly determined by the tetragonality, (c/a ratio) and the Vc.

关键词： ferroelectricity piezoelectric thin film

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Multiphysics modeling of PCM devices for scaling investigation

Multiphysics modeling of PCM devices for scaling investigati...

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International Conference on Simulation of Semiconductor Processes and devices (SISPAd)

作者： G. Ferrari A. Ghetti d. Ielmini A. redaelli A. Pirovano Politecnico di Milano Milan Italy R&D Technology Development Numonyx Agrate-Brianza Italy

A multiphysics model for Phase Change Memory (PCM) is calibrated on a large set of experimental data. Critical material and interface properties such as electrical and thermal resistivities and their dependence on temperature are extracted from data or fitting electrical characteristics with numerical simulations. The model is shown to match with a unique set of parameters experimental data from 90 nm and 45 nm technology nodes. The calibrated model is then exploited to perform a sensitivity analysis of key cell characteristics to geometry and material properties variations. Furthermore, the model is used to predict performance of a scaled down cell suitable for the 32 nm technology node and the results demonstrate the consistent scalability of PCM with respect to the technology node.

关键词： resistance Conductivity Numerical models resistance heating Phase change materials Electrical resistance measurement

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Palladium incorporated nickel silicide for a cost effective alternative salicide technology for scaled CMOS

Palladium incorporated nickel silicide for a cost effective ...

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International Symposium on VLSI technology, Systems and Applications

作者： Yoshifumi Nishi Takeshi Sonehara Akira Hokazono Shigeru Kawanaka Satoshi Inaba Atsuhiro Kinoshita Advanced LSI Technology Laboratory Corporate R&D Center Toshiba Corporation Japan Center for Semiconductor Research and Development Toshiba Corporation Semiconductor Company Japan Device and Process Development Center Corporate R&D Center Toshiba Corporation Yokohama Japan

Incorporation of platinum (Pt) into nickel silicide (NiSi) improves the reliability and thermal stability of electrodes in Si MOSFETs. Increasing the Pt content is desirable for further scaled CMOS, but incorporation of more Pt would tremendously increase the material cost. In addition, since Pt is one of the key materials for eco-technology such as catalyst for exhaust absorption and so on, reduction of the use of Pt whose amount is limited is essential for ecology. recently palladium (Pd), which has similar chemical properties to those of Pt, has been attracting interest as a substitute of Pt. Several works have pointed out that NiPdSi bulk film has superior thermal stability to NiSi. However, its potentiality in fully integrated CMOS devices has not been studied yet. In this work, we investigate the detailed properties of NiPdSi on fully integrated CMOS structures fabricated with the advanced process technology as a candidate of the alternative silicide material for NiPtSi.

关键词： CMOS technology Palladium Nickel Silicides Costs Thermal stability Platinum Electrodes MOSFETs Absorption

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Functional and Performance Verification of Overlay Multicast Applications - A Product Level Approach

Functional and Performance Verification of Overlay Multicast...

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Consumer Communications and Networking Conference, CCNC IEEE

作者： Thilmee Baduge Lim Boon Ping Kunio Akashi Jason Soong Ken-ichi Chinen Ettikan K. K. Eiichi Muramoto Immersive Communication Task Force Panasonic Corporation Japan Advanced Technology Development Group Panasonic R&D Center Malaysia Japan Advanced Institute of Science and Technology Japan

In this paper we present a testbed for the functional and performance verification and validation of product level overlay multicast (or ALM in short) applications which is a complex task due to humongous test patterns. Structured, systematic and simplified test environment is vital for product level quality validation. The key features of this testbed are network emulation, automated test scenario execution, log collection and testbed/real environment interconnectivity. The testbed uses StarBEd as its mother testbed and netem as the network emulator. The key contributions of this work are calibration of netem in term of network emulation and establishing an architecture to use netem and StarBEd for ALM system verification. The calibration of netem was carried out up to 30 pipes (logical links) and the results show the network emulation can be done at maximum 1.2% packet loss. One of the simple ALM verification experiments executed on the testbed took only 43 hours for execution completion compared to human execution which would take 15 weeks.

关键词： Automatic testing Emulation Calibration Protocols Network topology Switches Communications Society System testing Humans Peer to peer computing

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Comparison of Two Kinds of Humidifier on Microorganism Transmission via Aerosol of different Size and Quantity

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American Journal of Infection Control 2011年第5期39卷 E191-E191页

作者： Hongchao Wang Baomin Chen Yinghong Wu Qing Yang R&D center Beijing Orient-Tide Science and Technology Development Co. Ltd. Beijing China Director Infection Control Dept. Beijing Di-Tan Hospital Beijing China Director of Beijing Nosocomial Infection Control Network Peking University People's Hospital Beijing China Chief Researcher Dept. of Toxicology Beijing CDC P.R. China Beijing China

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