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Annual International Symposium on reliability Physics

作者： Christian Monzio Compagnoni Carmine Miccoli riccardo Mottadelli Silvia Beltrami Michele Ghidotti Andrea L. Lacaita Alessandro S. Spinelli Angelo Visconti Dipartimento di Elettronica e Informazione Politecnico di Milano and IUNET Milan Italy R&D-Technology Development Numonyx Agrate-Brianza Milan Italy IFN-CNR Milan Italy

This paper presents a detailed experimental investigation of the cycling-induced threshold voltage instability of deca-nanometer NANd Flash arrays, focusing on its dependence on cycling time and temperature. When the array is brought to a programmed state after cycling, instability mainly shows up as a negative shift of its threshold voltage cumulative distribution, increasing with time and resulting from partial recovery of cell damage created in the previous cycling period. The threshold voltage loss displays a strong dependence not only on the tunnel oxide electric field during retention, but also on the cycling conditions. In particular, performing cycling over a longer time interval or at higher temperatures delays the threshold voltage transients on the logarithmic time axis. The delay factor is studied as a function of the cycling duration and temperature on 60 and 41 nm technologies, extracting the parameter values required for a universal damage-recovery metric for NANd.

关键词： Threshold voltage Temperature dependence delay effects Flash memory Testing research and development Paper technology displays Semiconductor device reliability Semiconductor device modeling

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reliability constraints for TANOS memories due to alumina trapping and leakage

Reliability constraints for TANOS memories due to alumina tr...

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Annual International Symposium on reliability Physics

作者： Salvatore M. Amoroso Aurelio Mauri Nadia Galbiati Claudia Scozzari Evelyne Mascellino Elisa Camozzi Armando rangoni Tecla Ghilardi Alessandro Grossi Paolo Tessariol Christian Monzio Compagnoni Alessandro Maconi Andrea L. Lacaita Alessandro S. Spinelli Gabriella Ghidini R&D Technology Development Numonyx Agrate-Brianza Milan Italy Dipartimento di Elettronica e Informazione Politecnico di Milano and IUNET Milan Italy IFN-CNR Milan Italy

In this work we present a detailed investigation of TANOS memory reliability, focusing on issues raised by Al 2 O 3 trapping/detrapping and leakage. These effects are investigated as a function of alumina thickness, electric field and temperature, comparing experimental and modeling results for trap parameters extraction. For TANOS devices, Al 2 O 3 charge storage modifies program and erase saturation level particularly when higher Al 2 O 3 thikness are considered. Threshold instability in early steps for endurance and retarded behavior for retention can be also ascribed to the Al 2 O 3 trapping. Moreover, Al 2 O 3 layer has been shown to provide the main leakage path for bottom oxides thickness in the 4.5 nm or above range.

关键词： Memory management Stress High-K gate dielectrics Nonvolatile memory Electron traps Capacitors research and development Temperature Parameter extraction Semiconductor device modeling

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A concept of a novel edge termination technique: Junction termination (rJT)

A concept of a novel edge termination technique: Junction te...

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International Symposium on Power Semiconductor devices and Ics (ISPSd)

作者： Shigeto Honda ryoich Fujii Tsuyoshi Kawakami Seiji Fujioka Atsushi Narazaki Kaoru Motonami Power Semiconductor Device Development Department Mitsubishi Electric Corporation Limited Koshi Kumamoto Japan Power Semiconductor Device Development Department Manufacturing Engineering Center Mitsubishi Electric Corporation Limited Koshi Kumamoto Japan Power Semiconductor Device Development Department Advanced technology R&D center Mitsubishi Electric Corporation Limited Koshi Kumamoto Japan

ISBN: (纸本)9781424477180

This paper presents a novel junction termination technique, named recess Junction Termination (rJT), for power devices. This new junction termination improves the breakdown voltage of a planar junction by a silicon recess located to create a positive bevel, which reduces the peak of electric field. The rJT can reduce a thermal budget for the rESUrF (rEduced SUrface Field) layer by the silicon recess, and has compatibility with a fine-pitch process due to a planarization process using Chemical Mechanical Polish (CMP) treatments. After numerous simulations to optimize the structure parameters, we have succeeded in obtaining sufficient blocking capabilities of pn-rJT-diodes, the voltage ratings of which are from 75 V to 1700 V.

关键词： Silicon Planarization Boron Voltage Substrates Power semiconductor devices Power engineering and energy Surface treatment Fabrication Costs

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A boost in research on slags: a doubling in publications from literature since 2003

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Ironmaking & Steelmaking 2010年第7期37卷 476 - 481页

作者： r. Boom S. riaz K. C. Mills Director R&D Strategy & Competence Corus Research Development & Technology IJmuiden Technology Centre PO Box 10000 1970 CA IJmuiden The Netherlands Professor NIMR Chair in Primary Metals Production Department of Materials Science and Engineering Mekelweg 2 2628 CD Delft The Netherlands Email: Knowledge Group Leader Corus Research Development & Technology Teesside Technology Centre Grangetown Middlesbrough TS6 6US United Kingdom Email: Professor Imperial College Department of “Materials Prince Consort Rd London SW7 2BP United Kingdom Email:

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Scaling trends of neutron effects in MLC NANd Flash memories

Scaling trends of neutron effects in MLC NAND Flash memories

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Annual International Symposium on reliability Physics

作者： S. Gerardin M. Bagatin A. Paccagnella G. Cellere A. Visconti S. Beltrami C. Andreani G. Gorini C.d. Frost Department of Information Engineering University of Padova Padova Italy Applied Materials Baccini Treviso Italy Numonyx R&D-Technology Development Agrate-Brianza Italy Department of Physics University of Rome Rome Italy Department of Physics University of Milano Milan Italy ISIS Rutherford and Appleton Laboratory Didcot UK

ISBN: (纸本)9781424454303;9781424454310

We investigate atmospheric neutron effects on floating gate cells in MLC NANd Flash memories. Loss of information is shown to occur especially at the highest program levels, but to an extent that does not challenge current error correction capabilities. We discuss the physical mechanisms and analyze scaling trends, which show a rapid increase in sensitivity for decreasing feature size. A large spread in the cross section is visible from vendor to vendor for comparable feature size.

关键词： Neutrons Error correction codes Nonvolatile memory Physics CMOS technology Ionizing radiation Bit error rate research and development Laboratories Intersymbol interference

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Chelate Effect on the synthesis of carbon supported Pt nanoparticles for PEMFC anodes

Chelate Effect on the synthesis of carbon supported Pt nanop...

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Energy and Sustainable development

作者： Shyh-Jiun Liu Chia-Hung Huang Weng-Sing Hwang der-Yuan Lee Department of Greenery Technology National University of Tainan Taiwan Department of Materials Science and Engineering National Cheng Kung University Tainan Taiwan Surface Engineering and Heat Treatment Section Micro/Meso Mechanical Manufacturing R&D Department Metal Industries Research and Development Centre Kaohsiung Taiwan Department of Environmental Resource Management Chia Nan University of Pharmacy and Science Tainan Taiwan

ISBN: (纸本)9781424485635

Colloidal suspensions of spherical crystalline Pt nanoparticles with a narrow size distribution were synthesized using a microwave synthesis process. Analogous Pt-complexes (Pt(dien) 2+ , Pt(trien) 2+ , and Pt(en) 2 2+ . where dien = diethylenetriamine, trien = triethylenetetraamine, en = ethylenediamine) were deposited onto Vulcan XC-72 carbon powder to obtain Pt/C-x catalysts (x = 3, 4, and 22 represents the coordination number of the chelating agent). The Pt/C-x catalysts were evaluated under PEMFC conditions. X-ray diffraction and transmission electron microscopy were used to characterize the Pt/C-x catalysts. It was found that the Pt nanoparticles were uniform in size and highly dispersed on the carbon black supports. The chelating agents were expected to improve the growth of Pt particle size as well as the dispersion of Pt nanoparticles. In the PEMFC experiments, the mass-specific current density and mass-specific power density of the catalysts were as high as that of the commercial 20wt % Pt/C-ETEK catalyst.

关键词： X-ray imaging Anodes Charge coupled devices

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Virtual Story in Cyberspace: Valley of Geysers, Kamchatka

Virtual Story in Cyberspace: Valley of Geysers, Kamchatka

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International Conference on Cyberworlds

作者： Andrey Leonov Alexander Serebrov Mikhail Anikushkin dmitriy Belosokhov Alexander Bobkov Evgeny Eremchenko Pavel Frolov Ilya Kazanskiy Andrey Klimenko Stanislav V. Klimenko Viktoria Leonova Andrey rashidov Vasil Urazmetov Alexander Aleynikov Valeriy droznin Viktor dvigalo Vladimir Leonov Sergey Samoylenko Tikhon Shpilenok Protvino Institute of Computing for Physics and Technology Moscow region Russia Research and Development Center ScanEx Moscow Russia R&D Center ScanEx Moscow Singapore Petropavlovsk-Kamchatskiy Institute of Volcanology and Seismology FEB RAS Russia Petropavlovsk-Kamchatskiy Institute of Volcanology and Seismology FEB RAS Petropavlovsk-kamchatsky Russia Kronotskiy Natural State Biosphere Reserve Elizovo Kamchatskiy region Russia

Virtual 3d model of the Valley of Geysers, Kamchatka provides virtual travelling and interactive storytelling in the cyberspace and serves for scientific visualization, geodynamical processes modeling, disaster prepar... 详细信息

关键词： Solid modeling Three dimensional displays Biological system modeling data models Terrain factors Internet Cyberspace

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Highly reliable Vertical NANd technology with Biconcave Shaped Storage Layer and Leakage Controllable Offset Structure

Highly Reliable Vertical NAND Technology with Biconcave Shap...

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Symposium on VLSI technology

作者： Won-seok Cho Sun Il Shim Jaehoon Jang Hoo-sung Cho Byoung-Koan You Byoung-Keun Son Ki-hyun Kim Jae-Joo Shim Choul-min Park Jin-soo Lim Kyoung-Hoon Kim Ju-Young Lim Hui-Chang Moon Sung-min Hwang Hyun-seok Lim Han-Soo Kim Jungdal Choi Chilhee Chung Flash Core Technology Lab Semiconductor R&D Center Samsung Electronics Co. Ltd.San #24 Nongseo-Dong Giheung-Gu Yongin-City Gyeonggi-Do 449-711 Korea Process Development Team Semiconductor R&D Center Samsung Electronics Co. Ltd.San #24 Nongseo-Dong Giheung-Gu Yongin-City Gyeonggi-Do 449-711 Korea

ISBN: (纸本)9781424454518

The performance and reliability of 3-d NANd cells fabricated by TCAT (Terabit Cell Array Transistor) technology have been improved significantly via a damascened metal gates and a controlled offset between BL contact and select transistor. The damascened metal gate providing sufficiently low resistance is achieved by adopting a novel metal process. Highly suppressed disturbance property-is achieved by the appropriate offset which reduces the leakage current through the select transistor. It is proved that the TCAT NANd is a manufacturable technology in terms of reliability as well as performance in a channel hole with a diameter of 90nm.

关键词： Flash memory Vertical 3d TCAT and CTF

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reliability characterization of Phase Change Memory

Reliability characterization of Phase Change Memory

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Non-Volatile Memory technology Symposium

作者： Bob Gleixner Fabio Pellizzer roberto Bez Numonyx R&D - Technology Development 2550 North First Street Suite 250 San Jose CA 95131 USA R&D-Technology Development Numonyx Agrate-Brianza Italy

ISBN: (纸本)9781424449538;9781424449545

Phase Change Memory (PCM) has emerged as an attractive candidate for next-generation non-volatile memory devices. For these applications, reliability is determined by the ability to retain the state of data in the device and support a specified number of re-writes without failure. In PCM technologies, retention is limited by the meta-stable amorphous state of the cell. For cycling endurance (re-writes), failure occurs due to either void formation in the active material or contamination of the heating element of the cell. With optimized process integration and cell programming, large array devices based on a 90 nm PCM technology are able to support data retention to 10 years at 85°C and greater than 10 6 write cycles.

关键词： Phase change memory Phase change materials Nonvolatile memory Crystallization Amorphous materials research and development robustness Acceleration Failure analysis Contamination

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Microphase separated structures of block copolymer thin film with non-volatile selective solvent

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IOP Conference Series: Materials Science and Engineering 2010年第1期14卷

作者： Katsuhiro Yamamoto Naoya Umegaki Taito Matsutani Hideaki Takagi Eri Ito Shinichi Sakurai Department of Materials Science & Technology Graduate School of Engineering Nagoya Institute of Technology Gokiso-cho Showa-ku Nagoya 466-8555 Japan Material Development Section Central R&D Menicon Co. Ltd. 1-10 Kouzouji 5-chome Kasugai 487-0032 Japan Kyoto Institute of Technology Matsugasaki Sakyo-ku Kyoto 606-8585 Japan

Microphase separated structures of block copolymer, polystyrene-b-polyisoprene (PS-b-PI, PS = 14%) including non-volatile selective solvent thin films were investigated using grazing incidence small angle X-ray scattering technique. The diethyl phthalate (dEP) was used as a non-volatile selective solvent which solves PS only. The dEP swelled PS phase selectively and the microphase separated structure transited from the PS spherical domain to the lamellar domain with an increase in dEP content in the bulk state. Similarly, the phase separated structure in the thin film prepared by spin cast on a silicon wafer from the mixture of toluene/dEP and block copolymer changed according to the initial dPE concentration. However, the morphologies developed in the thin film were shifted to the structures at lower dEP concentration than that expected from the initial concentration. Moreover, the cylindrical and lamellar domains were aligned parallel and perpendicularly to the substrate, respectively.

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