检索结果-内蒙古大学图书馆

Symposium on VLSI technology

作者： d. J. Jung W. S. Ahn Y. K. Hong H. H. Kim Y. M. Kang J. Y. Kang E. S. Lee H. K. Ko S. Y. Kim W. W. Jung J. H. Kim S. K. Kang J. Y. Jung H. S. Kim d. Y. Choi S. Y. Lee K. H. A. C. Wei H. S. Jeong Technology-Development Team 2 Semiconductor R&D Center Memory Division Samsung Electronics Co. Ltd. San #24 Nongseo-Dong Giheung-Gu Yongin-City Kyungki-Do S. Korea

ISBN: (纸本)9781424418022

We demonstrate endurance characteristics of a 1T1C, 64 Mb FrAM in a real-time operational situation. To explore endurance properties in address access time t{sub}(AA) of 100ns, we establish a measurement set-up that covers asymmetric pulse-chains corresponding to d1- and d0-rEAd/rESTOrE/WrITE over a frequency range from 1.0 to 7.7MHz. What has been achieved is that endurance cycles approximate 5.9×10{sup}24 of cycle times in an operational condition of V{sub}(dd)=2.0V and 85℃ in the developed 64Mb FrAM. donor concentration due to build-up of oxygen vacancy in a ferroelectric film has also been evaluated to 2.3×10{sup}20cm{sup}(-3) from I-V-t measurements.

关键词： endurance property Operating conditions Ferroelectric rAM random access machine time cycles Endurance frequency ranges ferroelectric thin films Storage access times

来源：评论

学校读者我要写书评

暂无评论

Numerical optimization of single-mode photonic crystal VCSELs

Numerical optimization of single-mode photonic crystal VCSEL...

引用

International Conference on Numerical Simulation of Optoelectronic devices, (NUSOd)

作者： Peter Nyakas Tomofumi Kise Tamas Karpati Noriyuki Yokouchi Furukawa Electric Institute of Technology Limited Budapest Hungary Yokohama Research & Development Laboratories Photonic Device Research Center Furukawa Electric Corporation Limited Nishi Japan Yokohama R&D Labs. Furukawa Electr. Corp. Yokohama

The lattice constant of a single-defect photonic crystal vertical-cavity surface-emitting laser (PhC-VCSEL) is numerically optimized to achieve the highest single-mode power in the fundamental mode. The simulated results are compared to measured device characteristics, and the different factors influencing the single-mode behavior are analyzed.

关键词： Photonic crystals Vertical cavity surface emitting lasers Lattices Optical scattering Etching Laser modes Optical refraction Frequency Equations Optical resonators

来源：评论

学校读者我要写书评

暂无评论

TId Sensitivity of NANd Flash Memory Building Blocks

TID Sensitivity of NAND Flash Memory Building Blocks

引用

European Conference on radiation and its Effects on Components and Systems

作者： M. Bagatin G. Cellere S. Gerardin A. Paccagnella A. Visconti S. Beltrami RREACT Group Dipartimento di Ingegneria dell'Informazione Universita di Padova Numonyx R&D - Technology Development Agrate Brianza (Mi)

ISBN: (纸本)9781457704819

NANd Flash memories are the leader among high capacity non-volatile memory technologies and are becoming attractive also for radiation harsh environments, such as space. For these applications, a careful assessment of their sensitivity to radiation is needed. In this contribution we analyze TId effects on the many different building blocks of NANd Flash memories, including the charge pumps, row-decoder, and floating gate array. Since each of these elements have dedicated circuital and technological characteristics, we identify and study the peculiar failure mode for each part.

关键词： Flash memories Total dose effects X-rays

来源：评论

学校读者我要写书评

暂无评论

Extraction of Voltage Transfer Characteristic of Inverter Based on TSNWFETs

Extraction of Voltage Transfer Characteristic of Inverter Ba...

引用

2008 9th International Conference on Solid-State and Integrated-Circuit technology

作者： Yeonsung Kang Sung dae Suk Kang Il Seo donggun Park Hyungcheol Shin Seoul National Univ.Dept.of EE San 56-1Sillim-dongGwanak-guSeoul151-742Korea Advanced Technology Development Teaml R&D CenterSamsung Electronics Co.San 24Nongseo-DongKiheung-KuYongin-CityKyoungi-Do449-711Korea

In this paper,voltage transfer characteristic(VTC) of inverter based on Twin Silicon Nanowire MOSFETs (TSNWFETs) is *** with 40 nm gate length and 10 nm nanowire diameter are used to construct ***,switching threshold voltage, noise margin and transition width are extracted from VTC to show the performance of inverter based on *** addition,these performance parameters are extracted by varying the supply voltage.

关键词： VTC Extraction of Voltage Transfer Characteristic of Inverter Based on TSNWFETs

来源：评论

学校读者我要写书评

暂无评论

Fabrication of nano-structured VOx film by low temperature ion beam sputtering and reductive annealing

Fabrication of nano-structured VOx film by low temperature i...

引用

IEEE International Nanoelectronics Conference (INEC)

作者： Xiaodong Wang Guike Li Jiran Liang An Ji Ming Hu Fuhua Yang Jian Liu Nanjian Wu Hongda Chen Engineering Research Center for Semiconductor Integrated Technology Institute of Semiconductors Chinese Academy and Sciences Beijing China Engineering Research Center for Semiconductor Integrated Technology Chinese Academy of Sciences Beijing P. R. China Chinese Academv of Sciences Institute of Semiconductors Beijing P. R. China Department of electronic science and -technology Tianiin University Tianiin P. R. China Optoelectronic Research and Development Center Institute of Semiconductors Chinese Academy and Sciences Beijing China Optoelectronic R&D Center Chinese Academy of Sciences Beijing P. R. China

VO x thin films have been fabricated by low temperature ion beam sputtering and post reductive annealing process. Semiconductor-metal phase transition is observed for the film annealed at 400degC for 2 hours. The film also shows a polycrystal structure with grain size from 50 nm to 150 nm. The VO x thin films fabricated by this process have a TCr up to -2.7% at room temperature. Our results indicate a promising fabrication method of the nano-structured VO x film with relatively high TCr and semiconductor-metal phase transition.

关键词： Nanoelectronics Conferences

来源：评论

学校读者我要写书评

暂无评论

Strategy and Technical Support System for developing New TCM drugs

引用

World Science and technology 2008年第3期10卷 1-7页

作者： Qiong-lin LIANG Guo-an LUO Jian-qiang ZOU Xiu-mei GAO Jian-xun LIU Zu-guang YE Wei JIA Modern Research Center for TCM Tsinghua University Beijing 100084 China Division of Biotechnology and Medicine Department of Social Development Ministry of Science and Technology of China Beijing 100862 China Tianjin University of Traditional Chinese Medicine Tianjin 300193 China Xiyuan Hospital China Academy of Chinese Medical Sciences Beijing 100091 China State Research Center for R&D of TCM Multi-ingredient Drugs Beijing 100075 China School of Pharmacy Shanghai Jiao Tong University Shanghai 200030 China

Abstract Along with frequently changed human disease spectrums, multicomponent drugs have attracted increasing attention of the mainstream international medical community. Traditional Chinese Medicine (TCM) has been deemed one of the best choices for treating complex chronic diseases. In this context, people believe that TCM formula and Chinese patented medicine with proven effects are valuable assets for bringing out new drugs and that modernized composite medicine (MCM) can be developed enjoying TCM-specific merits, with rational compatibility, identical pharmaceutical ingredients, clearly defined mechanism, safety assurance, efficacy, and quality control. Such a MCM will become popular in the mainstream international medical market, allowing inventors being at an advantageous position in the international competition for innovative drugs. This paper proposes a technical roadmap for developing composite medicines, with a range of useful suggestions and solutions. It also presents a perspective for developing new composite medicines.

关键词： New drug discovery/development Traditional Chinese Medicine Composite medicine/Multicomponent drug roadmap Key technology

来源：评论

学校读者我要写书评

暂无评论

3dAV integrated system featuring arbitrary listening-point and viewpoint generation

3DAV integrated system featuring arbitrary listening-point a...

引用

IEEE Workshop on Multimedia Signal Processing

作者： Mehrdad Panahpour Tehrani Kenta Niwa Norishige Fukushima Yasushi Hirano Toshiaki Fujii Masayuki Tanimoto Kazuya Takeda Kenji Mase Akio Ishikawa Shigeyuki Sakazawa Atsushi Koike Visual Communications Laboratory KDDI R&D Laboratories Inc. Fujimino Saitama Japan Department of Information Science Nagoya University Nagoya Aichi Japan Department of Electrical Engineering and Computer Science Nagoya University Nagoya Aichi Japan Information Technology Centre Nagoya University Nagoya Aichi Japan Visual Communications Laboratory KDD Research and Development Laboratories Inc. Fujimino Saitama Japan

ISBN: (纸本)9781424422944

In this paper, we propose two novel methods for arbitrary listening-point generation for 3d audio-video (3dAV) integration in a large-scale multipoint cameras and microphones system with abilities to process, and display information of any recorded 3d scene in realtime. With this system, users are able to control their own viewpoint/listening-point position, freely. Arbitrary listening-point can be generated by either (i) ray-space representation of sound wave field (i.e. source sound independent) for multi frequency layers, or (ii) acoustic transfer function estimation (i.e. source sound dependent) and blind separation of sources of sounds. Arbitrary viewpoint generation is based on ray-space method, which is enhanced by using multipass dynamic programming for geometry compensation. Integration is done by either (i) ray-space representation of sound wave and image together, or (ii) integrating each camera video signal and acoustic transfer function of the same location as integrated 3dAV data. The prototype system of integrated audio-visual viewer achieves both good image and sound qualities with 15 frames/second.

关键词： Microphones Cameras Three dimensional displays Estimation Transfer functions Synchronization Interpolation

来源：评论

学校读者我要写书评

暂无评论

Investigation of Mobility in Twin Silicon Nanowire MOSFETs （TSNWFETs）

Investigation of Mobility in Twin Silicon Nanowire MOSFETs ...

引用

2008 9th International Conference on Solid-State and Integrated-Circuit technology

作者： Junsoo Kim Seungwon Yang Jaehong Lee Sung dae Suk Kangil Seo donggun Park Byung-Gook Park Jong duk Lee Hyungcheol Shin Nano Systems Institute (NSI) Inter-University Semiconductor Research Center (ISRC)and School of Electrical EngineeringSeoul National UniversitySan 56-1Shinlim-dongKwanak-kuSeoulKorea Advanced Technology Development Team1 R&D CenterSamsung Electronics Co.San 24Kiheung-GuYongin-City Kyunggi-DoKorea449-711

The transport characteristics of cylindrical gate-all-around twin silicon nanowire field-effect transistors with radius of 5 nm have been investigated. Mobility was estimated by extracting of source/drain resistance.

关键词： Investigation of Mobility in Twin Silicon Nanowire MOSFETs TSNWFETs

来源：评论

学校读者我要写书评

暂无评论

Neutron-induced soft errors in advanced flash memories

Neutron-induced soft errors in advanced flash memories

引用

International Electron devices Meeting (IEdM)

作者： G. Cellere S. Gerardin M. Bagatin A. Paccagnella A. Visconti M. Bonanomi S. Beltrami P. roche G. Gasiot r. Harboe Sorensen A. Virtanen C. Frost P. Fuochi C. Andreani G. Gorini A. Pietropaolo S. Platt DEI University of Padova Padova Italy Numonyx R&D - Technology Development Agrate-Brianza Italy STMicroelectronics Crolles France ESA ESTEC Noordwijk Netherlands Accelerator Laboratory University of Jyväskylä Finland Rutherford Appleton Laboratory ISIS Facility Didcot UK CNR-ISOF Bologna Italy Università di Roma Tor Vergata Italy Università di Milano-Bicocca Italy University of Central Lancashire UK

Atmospheric neutrons are a known source of Soft Errors (SE), in static and dynamic CMOS memories. This paper shows for the first time that atmospheric neutrons are able to induce SE in Flash memories as well. detailed experimental results provide an explanation linking the Floating Gate (FG) cell SE rate to the physics of the neutron-matter interaction. The neutron sensitivity is expected to increase with the number of bits per cell and the reduction of the feature size, but the SE issue is within the limit of current ECC capabilities and will remain so in the foreseeable future.

关键词： Flash memory Neutrons Intersymbol interference Error correction codes Laboratories IEC standards Logic arrays Logic testing research and development Joining processes

来源：评论

学校读者我要写书评

暂无评论

Two-bit Cell Operation in diode-Switch Phase Change Memory Cells with 90nm technology

Two-bit Cell Operation in Diode-Switch Phase Change Memory C...

引用

Symposium on VLSI technology

作者： d. H. Kang J. H. Lee J. H. Kong d. Ha J. Yu C. Y. Um J. H. Park F. Yeung J. H. Kim W. I. Park Y. J. Jeon M. K. Lee Y. J. Song J. H. Oh G. T. Jeong H. S. Jeong Advanced Technology Development Team 2 Memory R&D Div. Samsung Electronics Co. Ltd. San #24 Nongseo-Dong Giheung-Gu Yongin-City Gyunggi-Do 449-711 South Korea

ISBN: (纸本)9781424418022

This paper firstly reports key factors which are to be necessarily considered for the successful two-bit (four-level) cell operation in a phase-change random access memory (PrAM). They are 1) the write-and-verify (WAV) writing of four-level resistance states and 2) the moderate-quenched (MQ) writing of intermediate resistance levels, 3) the optimization of temporal resistance increase (so-called resistance drift) and 4) of resistance increase after thermal annealing. With taking into account of them, we realized a two-bit cell operation in diode-switch phase change memory cells with 90nm technology. All of four resistance levels are highly write endurable and immune to write disturbance above 10{sub}8 cycles, respectively. In addition, they are non-destructively readable above 10{sub}7 read pulses at 100ns and 1uA.

关键词： battery operation Phase change memory key factors Phase change random access memory Immunity Phase thermal insulation annealing

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：