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Erratum: 'A Novel Body-Tied Fin Field Effect Transistor Flash Memory Structure with λ-Shaped Floating Gate for Sub 45 nm NOr Flash Memory'

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Japanese Journal of Applied Physics 2008年第12R期47卷

作者： Yimao Cai Yun Heub Song Wook Hyun Kwon Younggoan Jang Wonhyeng ryu Joongshik Shin Chan-Kwang Park Advanced Technology Development Team2 Semiconductor R&D Center Samsung Electronics Co. Ltd. San #24 Nongseo-dong Giheung-gu Yongin Gyeonggi-do 446-711 Korea

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Study on Inter-Base Station Link Capacity Sharing using Cognitive radio Communication

Study on Inter-Base Station Link Capacity Sharing using Cogn...

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IEEE International Symposium on Personal, Indoor and Mobile radio Communications (PIMrC)

作者： Kanshiro Kashiki Mitsuo Nohara Satoshi Imata Hiroyuki Nakamura KDDI R&D Laboratories Technology Development Center Chiyoda Tokyo Japan Media Technology Department KDDI Chiyoda Tokyo Japan

This paper describes a study on beam switching scheme applicable to the cognitive radio communication, from the viewpoint of the efficient use of radio frequency resource, as a function of the response time of Web browsing. The beam switching is time division scheme of the assigned frequency bandwidth among one wireless link and another links. regarding the radio network, we consider three types of topology. As a result of software simulations, we conclude that the radio beam switching have the better performance in frequency use, comparing with the case of the conventional fixed frequency allocation. Furthermore, we simulate the IP throughput characteristics and response time characteristics of Web browsing in the radio link affected by transmission error.

关键词： Cognitive radio Communication switching delay radio spectrum management radio frequency Frequency conversion Bandwidth radio network Network topology Software performance

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Smallest Bit-Line Contact of 76nm pitch on NANd Flash Cell by using reversal Pr (Photo resist) and SAdP (Self-Align double Patterning) Process

Smallest Bit-Line Contact of 76nm pitch on NAND Flash Cell b...

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IEEE/SEMI Conference and Workshop on Advanced Semiconductor Manufacturing

作者： Byungjoon Hwang Jaehwang Shim Jang-Ho Park Kwangseok Lee Sunghyun Kwon Sang-Yong Park Yoonmoon Park dong-Hwa Kwak Jaekwan Park Won-Seong Lee Advanced Technology Development Team Semiconductor R&D Center Memory Business Samsung Electro Mechanics Company Limited Yongin si Kyunggi South Korea

For the scaling down of design rule to develop the high density NANd flash device, the reduced active area forces to form a small bit-line contact with the low contact-resistance, as well as the low junction leakage current due to the borderless contact. In this paper, we propose a novel process to make 38 nm small size contact with 76 nm pitch by using the reversal Pr (photo resist) and SAdP (self-align double patterning) process. The methods to minimize the contact resistance and to suppress the junction leakage current were explained on NANd flash device with 38 nm node technology.

关键词： resists Etching Leakage current Contact resistance Lithography Production research and development Electronic mail Fabrication Atomic layer deposition

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Synthesizing realistic Vehicular Mobility for More Precise Simulation of Inter-vehicle Communication

Synthesizing Realistic Vehicular Mobility for More Precise S...

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IEEE Globecom Workshops

作者： Kazuhiro Nakanishi Takaaki Umedu Teruo Higashino Hironobu Kitaoka Hiroko Mori Graduate School of Information Science and Technology Osaka University Graduate School of Information Science and Technology Osaka University Japan Toyota Central Research and Development Laboratories Inc. Japan Toyota Central R&D Labs

recently many researches about transmission of traffic information among vehicles by using inter-vehicle communication without any load side infrastructures have been studied. In order to evaluate performance of such inter-vehicle communication, traffic simulators are widely used. However, in most of existing traffic simulators, distance between two following vehicles is modeled as equals based on statistical flow rates. Such mobility models do not reflect real performance of inter-vehicle communication, In this paper, we extract particular characteristics of real vehicular mobility from several traces of vehicular movement, formulate them formally, implement the formulated realistic vehicular mobility on an existing traffic simulator and obtain more real performance of inter-vehicle communication. In the extracted vehicular mobility, each vehicle runs at a different speed, with different distance from the vehicle ahead, and with different vehicular density/distribution while the bottleneck capacity and saturation flow rate of the target roads are preserved as the same as those on the original one. We have shown that performance of inter-vehicle communication is rather different between the proposed mobility and original mobility by evaluating the reachable hop counts of multi-hop communication and performance of the dSr protocol.

关键词： Traffic control road vehicles Telecommunication traffic Spread spectrum communication Mobile communication Protocols Ad hoc networks research and development Predictive models Microscopy

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The pupil as a possible premonitor of drowsiness

The pupil as a possible premonitor of drowsiness

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Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC)

作者： Junpei Nishiyama Koji Tanida Masashi Kusumi Yutaka Hirata Department of Computer Science Chubu University College of Engineering Kasugai Japan researchers Honda R&D Co. Ltd. Automobile R&D Center Department 4 Technology Research Division 2. e-mail: Koji_Tanida@n.t.rd.honda.co.jp Automobile Research and Development Center Department Technology Research Division Japan

Prediction of drowsiness based on an objective measure is demanded in machine and vehicle operations in which human errors may cause fatal accidents. Currently we focused on the pupil of the eye which is controlled by the autonomic nervous system, and easily observable non-invasively from the outside of the body. We employed uneventful driving simulation to induce drowsiness of human subjects, and an anti-saccade task to evaluate their cognitive and motor performance. First we confirmed that pupil diameter fluctuates with large amplitude at low frequencies when the subject is aware of his/her drowsiness as reported previously. during this period, the latency of anti-saccade initiation was elongated and varied. We then found that prior to this fluctuation, pupil diameter decreases gradually in most subjects, and they were not aware of sleepiness during this period. We conclude that this monotonic gradual miosis can be a reliable premonitor of drowsiness.

关键词： Humans Vehicles Autonomic nervous system Frequency Fluctuations Signal design Computer science Automotive engineering research and development Accidents

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Sintering Condition of Cordierite for Microwave/Millimeterwave dielectrics

Sintering Condition of Cordierite for Microwave/Millimeterwa...

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IEEE International Symposium on Applications of Ferroelectrics (ISAF)

作者： Hitoshi Ohsato Mio Terada Isao Kagomiya Keizou Kawamura Ken-ichi Kakimoto Materials Science and Engineering Shikumi-College Nagoya Institute of Technology Nagoya Japan Materials Science and Engineering Nagoya Institute of Technology Shikumi College Nagoya Japan Materials Research & Development Division General R&D Laboratories Taiyo Yuden Company Limited Gunma Japan

With advent of ubiquitous age, the high quality dielectric materials have been required for the wireless communications available to the millimeterwave as well as microwave frequencies. These high frequencies would be expected for ultra high speed LAN, ETS and car anti-collision system on the intelligent transport system (ITS) and so on. Silicates are good candidate for microwave/millimeterwave dielectrics, because of their low dielectric constant. Cordierite (Mg 2 Al 4 Si 5 O 18 ) is one of the silicates with low dielectric constant (epsiv r ), which are expected for good candidate of millimeterwave dielectrics. This study has been focused on the sintering condition of cordierite: the lowest calcined temperature of 1355degC among 1355 to 1375degC brings a single phase, the highest sintering temperature of 1440degC among 1375 to 1440degC brings a single phase. At 1440degC, the highest density of 2.48 g/cm 3 was obtained. dielectric constant was depended on the sintering temperatures, and the density was also was improved by the cooling rate from sintering temperature. The microwave dielectric properties are as follows: epsiv r = 6.14, Qldrf= 59682 GHz and tau r = -26.1 ppm/degC.

关键词： dielectric constant Frequency Temperature dependence Powders Materials science and technology dielectric materials Wireless communication Cooling dielectric losses delay effects

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Key Integration Technologies for Nanoscale FrAMs

Key Integration Technologies for Nanoscale FRAMs

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IEEE International Symposium on Applications of Ferroelectrics (ISAF)

作者： d.J. Jung Y.K. Hong H.H. Kim J.H. Park H.S. Kim S.K. Kang J.H. Kim W.S. Ahn d.Y. Choi J.Y. Jung W.W. Jung E.S. Lee H.K. Goh S.Y. Kim J.Y. Kang Y.M. Kang S.H. Joo S.Y. Lee H.S. Jeong Kinam Kim Advanced Technology Team 2 Semiconductor R&D center Samsung Electronics Co. LTD Yongin-City Gyunggi-Do KOREA Advanced Technology Team 2 Semiconductor Research and Development Center Samsung Electronics Company Limited Yongin si Gyeonggi South Korea

We discuss key technologies of 180 nm-node ferroelectric memories, whose process integration is becoming extremely complex when device dimension shrinks into a nano-scale. This is because process technology in ferroelectric integration does not extend to conventional shrink technology due to many difficulties of coping with MIM (metal-insulator-metal) capacitors. The key integration technologies in ferroelectric random access memory (FrAM) comprise (1) etching technology to have less plasma damage; (2) stack technology for the preparation of robust ferroelectrics; (3) capping technology to encapsulate cell capacitors; and (4) vertical conjunction technology to connect cell capacitors to the plate-line. What has been achieved from these novel approaches is not only to have a peak-to-peak value of 675 mV in bit-line potential but to ensure sensing margin of 300 mV in opposite-state retention even after 1000 hours at 150degC.

关键词： random access memory Ferroelectric films Nonvolatile memory Ferroelectric materials MIM capacitors Nanoscale devices Metal-insulator structures Etching Plasma applications Plasma devices

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2-stack 1d-1r Cross-point Structure with Oxide diodes as Switch Elements for High density resistance rAM Applications

2-stack 1D-1R Cross-point Structure with Oxide Diodes as Swi...

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2007 IEEE International Electron devices Meeting (IEdM 2007), vol.2

作者： Myoung-Jae Lee Youngsoo Park Bo-Soo Kang Seung-Eon Ahn Changbum Lee Kihwan Kim Wenxu. Xianyu G. Stefanovich Jung-Hyun Lee Seok-Jae Chung Yeon-Hee Kim Chang-Soo Lee Jong-Bong Park In-Gyu Baek In-Kyeong Yoo Samsung Advanced Institute of Technology Semiconductor Device Laboratory Gyeonggi-Do Korea Nano Fabrication Technology Center Samsung Advanced Institute of Technology Gyeonggi-Do Korea Analytical Engineering Center Samsuna Advanced Institute of Technology Gyeonggi-Do Korea Advanced Process Development Team Semiconductor R&D Center Gyeonggi-Do Korea

We have successfully integrated a 2-stack 8×8 array 1d-1r (one diode-one resistor) structure with 0.5μm×0.5μm cells in order to demonstrate the feasibility of high density stacked rrAM. p-CuO{sub}X/n-InZnO{sub}X heterojunction thin film was used for the first time as a oxide diode which shows increased current density of two orders over our previous p-NiO{sub}x/n-TiO{sub}x oxide diode. And Ti-doped NiO was used for the storage node. No limitation to the number of stacks has been observed from our results. Cell and device properties of our cross-point structure 8×8 array are reported. In addition, all fabrication processes were done at room temperature without other dedicated facilities or processes allowing for compatibility with current CMOS technology. Bi-stable switching for 1d-1r memory was demonstrated for our 2-stack cross-point structures showing excellent behavior for both diode and storage nodes. The forward current density for p-CuO{sub}X/n-IZO{sub}X diodes was over 10{sup}4 A/cm{sup}2, and the operation voltage for the storage node with diode attached was around 3V.

关键词： Switches diodes Current density CMOS technology read-write memory resistors Heterojunctions Transistors Fabrication Temperature

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A Novel Encapsulation technology for Mass-Productive 150 nm, 64-Mb, 1T1C FrAM

A Novel Encapsulation Technology for Mass-Productive 150 nm,...

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IEEE International Symposium on Applications of Ferroelectrics (ISAF)

作者： H. K. Ko d. J. Jung Y. K. Hong J. H. Park Y. M. Kang H. H. Kim S. K. Kang H. S. Kim J. Y. Jung d. Y. Choi S. Y. Kim W. S. Ahn J.-H. Kim W. W. Jung E. S. Lee J. Y. Kang S. Y. Lee H. S. Jeong Kinam Kim Memory Division Samsung Electronics Co. Ltd. Yongin-Si Kyungki-Do Korea Advanced Technology Development Team Semiconductor R&D Center Memory Division Samsung Electronics Co. Ltd. Kyungki-Do Korea

In order to realize a cost-effective high density FrAM product over 64-Mb, it is inevitable to develop technologies for a small cell and large wafer size without degradation during full integration. We have successfully demonstrated a fully functional 0.16 μm 2 capacitor size, 64-Mb, 1T1C FrAM on an 8-inch wafer by introducing new integration technologies at 150 nm technology node. One of the key technologies is the use of novel capping layer, i.e. Al 2 O 3 , which prevents the capacitor from the degradation caused by following integration process. It was found that novel capping Al 2 O 3 layer was very effective to block chronic hydrogen diffusion, and depending on the wafer size, the effective capping layer condition is changed. By introducing a novel capping layer of Al 2 O 3 and optimizing its process conditions, the fully integrated ferroelectric capacitor for the 150nm, 64-Mb, 1T1C FrAM on the 8-inch Si-substrate shows good ferroelectric properties such as a polarization value of 33 μC/cm 2 with an uniform distribution of σ = 1.27, and the sensing window of 300mV at 85°C.

关键词： Encapsulation random access memory Ferroelectric films Nonvolatile memory Capacitors Hydrogen degradation Ferroelectric materials Polarization dielectrics

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Analysis of a submarine's evasive capability against an antisubmarine warfare torpedo using dEVS modeling and simulation 07

Analysis of a submarine's evasive capability against an anti...

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Proceedings of the 2007 spring simulation multiconference - Volume 2

作者： doo-Yeoun Cho Myeong-Jo Son Jung-Ho Kang Sung-Jun Lee Ju-Hwan Cha Seong-Jin Yoo Hyo-Kwang Lee Kyu-Yeul Lee Tae-Wan Kim Yong-Seog Ko Seoul National University Korea Seoul National University Seoul Korea Republic of Korea Army Captain Information Technology R&D Team DAEWOO Shipbuilding & Marine Engineering Inc Geoje-si Gyeonsangnam-do Korea Korea Advanced Institute of Science and Technology Daejeon Korea Agency for Defense Development Jinhae Korea

ISBN: (纸本)9781565553132

The evasive capability of a costal conventional submarine against a light antisubmarine warfare (ASW) torpedo has been studied. The simulation systems are first analyzed and designed using Unified Modeling Language (UML). Then, the ASW torpedo, submarine, decoy and jammer model are developed using dEVS formalism and simulated in dEVSim++. We analyzed the submarine's evasive performance according to its maximum speed and acceleration as well as the sonar range of the ASW torpedo. We expect the results to be useful for the simulation based acquisition (SBA) of a submarine system.

关键词： evasive capability simulation based acquisition (SBA) unified modeling language (UML) submarine dEVS formalism

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