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33rd European Conference and Exhibition of Optical Communication

作者： A. Al Amin M. Takenaka T. Tanemura K. Shimizu r. Inohara K. Nishimura M. Usami Y. Takita Y. Kai H. Onaka H. Uetsuka Y. Nakano Optical Industry and Technology Development Association (OITDA) Japan Research Center for Advanced Science and Technology the University of Tokyo 4-6-1 Komaba Meguro-ku 153-8904 Japan KDDI R&D Laboratories Inc. Japan Fujitsu Laboratories Limited Japan Hitachi Cable Ltd. Japan

We demonstrate deflection routing for random burst collision in a 3-node optical burst switching network testbed. Using a Ether-frame capable burst edge node, layer 2 characterization was performed, with neartheoretic... 详细信息

关键词： Optical switches Adaptive optics Bit error rate Photonics

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GaN HEMT Based doherty Amplifier for 3.5-GHz WiMAX Applications

GaN HEMT Based Doherty Amplifier for 3.5-GHz WiMAX Applicati...

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European Conference on Wireless technology

作者： Junghwan Moon Jangheon Kim Ildu Kim Young Yun Woo Sungchul Hong Han Seok Kim Jong Sung Lee Bumman Kim Department of Electrical Engineering Pohang University of Science and Technology Pohang Gyeongbuk Republic of Korea Telecommunication Research & Development Center Samsung Electronics Company Limited Suwon Gyeonggi South Korea Telecommunication R&D Center Samsung Electronics Co. LTD Suwon Gyeonggi Republic of Korea

We have implemented a doherty amplifier for 3.5-GHz World Interoperability for Microwave Access (WiMAX) applications using Eudyna 90-W (P 3dB ) Gallium-Nitride (GaN) High Electron Mobility Transistor (HEMT) because of the poor efficiency of a standard class AB amplifier when the linearity performance is good. The load modulation performance of the GaN HEMT device for the doherty operation is rather moderate but workable. The linearity is improved using the in-band error cancellation technique of the doherty amplifier. The implemented doherty amplifier has been designed at an average output power of 43 dBm, backed-off about 8 dB from the 51 dBm (P 3dB ). For WiMAX signal with 28 MHz signal bandwidth, the measured drain efficiency of the amplifier is 27.8%, and the measured relative Constellation Error (rCE) is -33.17 dB, while those of the comparable class AB amplifier are 19.42% and -24.26 dB, respectively, at the same average output power level.

关键词： Gallium nitride HEMTs WiMAX Power amplifiers Microwave amplifiers Linearity Power generation Power measurement Microwave devices MOdFETs

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Amorphization and Templated recrystallization (ATr) Study for Hybrid Orientation technology (HOT) using direct Silicon Bond (dSB) Substrates

Amorphization and Templated Recrystallization (ATR) Study fo...

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International Symposium on VLSI technology, Systems and Applications

作者： Yao-Tsung Huang Angelo Pinto Chien-Ting Lin Che-Hua Hsu Manfred ramin Mike Seacrist Mike ries Kenneth Matthews Billy Nguyen Melissa Freeman Bruce Wilks Chuck Stager Charlene Johnson Laurie denning Joe Bennett John Pilot Sachin Joshi Tung-Hsing Lee Mike Ma Osbert Cheng rick Wise Central R&D Division UMC Hsin-Chu City Taiwan R.O.C. Texas Instruments Inc. USA MEMC Electronic Materials Inc. Taiwan Advanced Technology Development Facility Inc. Taiwan Department of Electrical and Computer Engineering The University of Texas at Austin USA United Microelectronics Corp Hsinchu TW

ISBN: (纸本)142440584X

The use of hybrid orientation technology (HOT) with direct silicon bond (dSB) wafers consisting of a (110) crystal orientation layer bonded to a bulk (100) handle wafer provides promising opportunities for easier migration of bulk CMOS designs to higher performance materials. In this work, the integration of shallow-trench-isolation (STI) after amorphization and templated recrystallization (ATr) scheme for converting surface orientation from (110) to (100) was investigated. By optimizing the trade-off between ATr-induced triangular morphology and dSB layer thickness, a 3X holes mobility improvement and 36% drive current gain were achieved for PMOSFETs fabricated on (110) plane using dSB-HOT. In addition, un-loaded ring oscillators fabricated using dSB substrates show a 38% improvement compared with control CMOS on (100) wafers.

关键词： MOSFETs Silicon on insulator technology Surface morphology CMOS technology Substrates Crystalline materials Wafer bonding ring oscillators Thyristors diodes

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An Energy-efficient Architecture of Wireless Home Network Based on MAC Broadcast and Transmission Power Control

An Energy-efficient Architecture of Wireless Home Network Ba...

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2007 International Conference on Consumer Electronics (ICCE 2007)

作者： Kenji Watanabe Masanao Ise Takao Onoye Hiroaki Niwamoto Ikuo Keshi Graduate School of Information Science and Technology Osaka University Japan R&D Department 1 Synthesis Corporation Japan Corporate Research and Development Group Sharp Corporation Japan

To construct an energy-efficient wireless home network, novel architecture is proposed. In this architecture, all nodes are classified into stationary nodes and mobile nodes according to the functionality of each node. As for mobile nodes which are usually battery-powered, effective handover sequence based on MAC broadcasting and a transmission power control framework are employed. Experimental results demonstrate that in the proposed architecture, communication time and power consumption of mobile nodes can be reduced by 1.2sec and 42.8%, respectively.

关键词： Energy efficiency Home automation Broadcasting Power control ZigBee Energy consumption Network topology research and development Mobile communication routing

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Hierarchical Power distribution with 20 Power domains in 90-nm Low-Power Multi-CPU Processor

Hierarchical Power Distribution with 20 Power Domains in 90-...

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IEEE International Conference on Integrated Circuit design and technology (ICICdT)

作者： Yusuke Kanno Hiroyuki Mizuno Yoshihiko Yasu Kenji Hirose Yasuhisa Shimazaki Tadashi Hoshi Yujiro Miyairi Toshifumi Ishii Tetsuya Yamada Takahiro Irita Toshihiro Hattori Kazumasa Yanagisawa Naohiko Irie Central Research Laboratory Hitachi Ltd. Kokubunii Tokyo Japan R&D Group Hitachi Ltd. Chiyoda-ku Tokyo Japan Renesas Technology Corp. Kodaira Tokyo Japan Renesas Technology Corporation Kodaira Tokyo Japan Hitachi ULSI Systems Co Ltd. Fukuoka Fukuoka Japan Hitachi Ltd. Central Research and Development Laboratory Kokubunji Tokyo Japan

Hierarchical power distribution with a power tree has been developed. The key features are power tree management rules and a distributed common power-domain implementation. The hierarchical power distribution supports a fine-grained power gating with dozens of power domains, which is analogous to a fine-grained clock gating. Leakage currents of a 1,000,000-gate power domain were effectively reduced to 1/4,000 in multi-CPU SoCs with minimal area overhead.

关键词： Power distribution System-on-a-chip Clocks Leakage current Fabrication Large scale integration digital signal processing chips Circuits repeaters Laboratories

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Estimated beam pattern and echolocation characteristics of clicks recorded from a free-ranging Ganges river dolphin

Estimated beam pattern and echolocation characteristics of c...

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International Symposium on Underwater technology

作者： Tamaki Ura rajendar Bahl Harumi Sugimatsu Junichi Kojima Tomoki Inoue Tetsuo Fukuchi Sandeep Behera Ajit Pattnaik Muntaz Khan Sudhakar Kar Chandra Sekhar Kar Institute of Industrial Science University of Tokyo Indian Institute of Technology Delhi India Institute of Industrial Science University of Tokyo Japan KDDI R&D Laboratories Inc. Japan System Giken Co. Ltd. WWF-India India Chilika Development Authority Parallel Geometry Inc. Office of the Principal CCF(Wildlife) & Chief Wildlife Warden

recordings of bio-sonar clicks from a free-ranging Ganges river dolphin (Platanista gangetica) in Budhabalanga river in Orissa, India have been made for the first time in April 2006. A high frequency multi-hydrophone 3.2 meter long array composed of three hydrophones forming an equispaced linear array and another two hydrophones in conjunction with the central hydrophone forming a small SSBL triangular array in a plane perpendicular to the array axis was used. The array structure was deployed both in horizontal and vertical configurations. The click sounds of the dolphin received on each hydrophone were sampled at a rate of 500 kHz per channel and recorded over a period of 2 days. An estimate of the dolphin's 3-d location was made using the relative delays of the click signal at the hydrophones. From these sampled click data, the sonar beam pattern of the animal (in both horizontal plane and vertical plane) has been estimated using difference of ASL (apparent source level of the dolphin) and the absolute angles of the dolphin location between the central hydrophone and the other two peripheral hydrophones for the "on axis clicks". The dolphin made several "runs" towards the array during the observation period. The variation of ASL with the range of the dolphin during its approach towards the array showed a systematic trend of reduction in ASL as the range reduced. This suggests that the animal was echolocating on the array as a possible target. The results also suggest that the animal can exercise control of the transmit signal level.

关键词： rivers dolphins Sonar equipment Animals Frequency delay estimation Acoustic beams Acoustic measurements Hydrogen research and development

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On-panel Analog Output Buffer for data driver with Consideration of device Characteristic Variation in LTPS technology

On-panel Analog Output Buffer for Data Driver with Considera...

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2007亚洲显示国际会议

作者： Yu-Hsuan Li Ming-dou Ker Chun-Yuan Hsu Nanoelectronics and Gigascale Systems Laboratory Institute of Electronics National Chiao-Tung University Hsinchu Taiwan China Nanoelectronics and Gigascale Systems Laboratory Institute of Electronics National Chiao-Tung University Hsinchu Taiwan China Panel Design Dept. Technology Development General Division R&D Center TFT Business Unit Chunghwa Picture Tubes LTD. Taoyuan Taiwan China

A class-A analog output buffer for the data driver with consideration of device variation in low temperature poly-silicon (LTPS) technology is *** high enough mobility,LTPS thin-film transistor (TFT) has been suitable for the realization with driver circuits on the LCd panel to meet system-on-panel (SoP) ***,the device char- acteristics of poly-Si TFTs have poor uniformity and suffer from huge variations in different locations due to the poly-sili- con grain ***,the variation on device characteristic of the N-type TFI" is much worse than that of P-type ***,replacing the critical part of the analog circuit by P-TFTs is a good design solution for suppressing device characteristic variation in order to improve manufacturing yield of the analog circuit on panel.A class-A output buffer real- ized with P-TFTs as the input stage has been designed and fabricated in a 8-μm LTPS *** the experimental results,this proposed analog output buffer with P-TFTs as input stage can be operated at 50-kHz operation frequency with at least a 1-to-9 V output swing for using in the on-panel data drivers to provide a uniform brightness and high resolution display.

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Novel Heat dissipating Cell Scheme for Improving a reset distribution in a 512M Phase-change random Access Memory (PrAM)

Novel Heat Dissipating Cell Scheme for Improving a Reset Dis...

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Symposium on VLSI technology

作者： d.H. Kang J.S. Kim Y.r. Kim Y.T. Kim M.K. Lee Y.J. Jun J.H. Park F. Yeung C.W. Jeong J. Yu J.H. Kong d.W. Ha S.A. Song J. Park Y.H. Park Y.J. Song C.Y. Eum K.C. ryoo J.M. Shin d.W. Lim S.S. Park J.H. Kim W.I. Park K.r. Sim J.H. Cheong J.H. Oh J.I. Kim Y.T. Oh K.W. Lee S.P. Koh S.H. Eun N.B. Kim G.H. Koh G.T. Jeong H.S. Jeong Kinam Kim Advanced Technology Development Team 2 Yongin-City Gyunggi-Do South Korea Semi. Business Samsung Electronic Co. Ltd. Yongin-City Gyunggi-Do South Korea CAE Yongin-City Gyunggi-Do South Korea Analytical Engineering Center Samsung Advanced Institute of Technology Yongin-City Gyunggi-Do South Korea Process Analysis & Control Group Memory R&D Div. Yongin-City Gyunggi-Do South Korea

ISBN: (纸本)4900784036;97

Programming with larger current than optimized one is often preferable to ensure a good resistance distribution of high-resistive reset state in high-density phase-change random access memories because it is very effective to increase the resistance of cells to a target value. In this paper, we firstly report that this larger current writing may conversely degrade the reset distribution by reducing the resistance of normal cells via the partial crystallization of amorphous Ge 2 Sb 2 Te 5 and this degradation can be suppressed by designing a novel cell structure with a heat dissipating layer.

关键词： Phase change random access memory Crystallization degradation Amorphous materials Writing resistance heating Temperature Phase change materials Switches Cooling

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A CQI FEEdBACK rEdUCTION SCHEME FOr MULTI-USEr MIMO/OFdMA SYSTEMS

A CQI FEEDBACK REDUCTION SCHEME FOR MULTI-USER MIMO/OFDMA SY...

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18th International Symposium on Personal, Indoor and Mobile radio Communications (PIMrC 2007), vol.3

作者： Myeon-gyun Cho Youngju Kim Jaekon Lee daesik Hong 4G System Development Team Telecommunication R&D Center Samsung Electronics Company Limited Suwon South Korea Information and Telecommunication Laboratory Center for Information Technology Yonsei University Seoul South Korea

An opportunistic scheduling is adopted to improve the capacity of the system by exploiting the multiuser diversity of multiuser MIMO (MU-MIMO)systems. However, it requires a large amount of feedback carrying the channel quality information (CQI) of each user to the transmitter. The considered Per User Unitary and rate Control (PU{sup}2rC) needs to feedback the preferred precoding index and its CQIs, and it has a defect in scheduling the streams for the grouped user. In order to overcome these drawbacks, a novel feedback reduction scheme is proposed and is modified for OFdMA systems in this paper. It employs transmitter controlled precoding and opportunistic feedback (TCP-OFB) in conjunction with frequency scheduling. The simulation results demonstrate that TCP-OFB/OFdMA shows comparable performance to PU{sup}2rC while it only requires far reduced feedback load.

关键词： Feedback MIMO Scheduling Multiaccess communication radio transmitters Access protocols Land mobile radio Mobile communication research and development Information technology

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Correction to “Edge Profile Effect of Tunnel Oxide on Erase Threshold Voltage distributions in Flash Memory Cells”

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IEEE Transactions on Electron devices 2007年第4期54卷 893-893页

作者： Bomsoo Kim Wook-Hyun Kwon Chang-Ki Baek Younghwan Son Chan-Kwang Park Kinam Kim dae M. Kim School of Computational Sciences Korea Institute of Advanced Study Seoul South Korea Advanced Technology Development Team Semiconductor R&D Center Samsung Electronics Company Limited Gyeonggi South Korea

In the original article by B. Kim (see ibid., vol. 53, no. 12, p. 3012-3019, dec. 2006) the biography for dr. Kinam Kim was out of date. A more current one is given.

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