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VoIP over cdma2000 1xEV-dO revision A

IEEE COMMUNICATIONS MAGAZINE 2006年第2期44卷 88-95页

作者： Yavuz, M diaz, S Kapoor, r Grob, M Black, P Tokgoz, Y Lott, C Corporate Research and Development of Qualcomm Inc. San Diego California. QUALCOMM Inc. Corporate R&D Division Qualcomm. Senior Vice President of Technology for Corporate Research and Development QUALCOMM Incorporated. System Engineer Qualcomm Inc. San Diego California. Corporate R&D Department Qualcomm Inc. San Diego

In this article we analyze performance of VoIP services over 1xEVdO-revision A (dO-rev A) networks and show that high-quality VoIP with unconstrained mobility and high capacity can be achieved. Together with quality of service (QoS) requirements, we emphasize practical issues such as mobility, degradation of feedback-channel quality, and packet overheads. Novel techniques are presented for voice processing such as smart blanking and adaptive dejitter playback buffer with time warping. These techniques help to meet QoS constraints to achieve a circuitlike voice quality while improving overall capacity. detailed end-to-end simulations are presented and system capacity is analyzed under the QoS and system stability constraints. We claim that dO-rev A can provide VoIP capacity comparable to circuit-switched cellular CdMA technologies (e.g., IS-2000) and simultaneously carry significant amount of other types of traffic such as non-delay sensitive applications and downlink multicast.

关键词： INTErNET telephony COdE division multiple access WIrELESS communication systems QUALITY of service MULTICASTING (Computer networks) INTErNET industry SIMULATION methods & models SPrEAd spectrum communications TELEPHONE systems

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Plant-derived Vaccines: A New Approach to International Public Health

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Journal of Food Science 2008年第1期69卷

作者： CHArLES J. ArNTZEN rICHArd T. M AHONEY About the authors: Charles Arntzen was appointed to the Florence Ely Nelson Presidential Endowed Chair at Arizona State Univ. in Tempe in 2000. He also serves as the Founding Director of the Arizona Biomedical Institute. Prior to joining ASU Dr. Arntzen was the president and CEO of the Boyce Thompson Institute for Plant Research in Ithaca New York. He has served on many national and international committees including service as Chairman of the National Institutes of Health's Biotechnology Policy Board and as Chair of the Biobased Industrial Products Committee for the National Academy of Sciences. He was elected to the US National Academy of Sciences in 1983 and to the National Academy of India the following year. He currently serves as a member of President George W. Bush's Council of Advisors on Science & Technology. Richard Mahoney joined the faculty of Arizona State Univ. in 2002 and with Dr. Arntzen is the co-founder of the proVacs (production of Vaccines using Applied Crop Science) Center. He has been an international pioneer in public sector management of intellectual property and in policy issues related to the global introduction of vaccines. He formerly served as Vice President of PATH (the Program for Appropriate Technology in Health Seattle Washington) as chairman of the International Task Force on Hepatitis B Immunization and as co-founder and Chief Development and Administrative Officer of IVI (the International Vaccine Institute Seoul Korea). He has spent the past 15 years focusing on vaccine production and supply issues and has identified intellectual property as a crucial element in assuring vaccine supply to the developing world. Based upon this experience he was the architect of recently created the Center for Management of Intellectual Property in Health R&D (MIHR) program which is based in London England. Their mailing address is: Arizona Biomedical Institute Arizona State Univ. PO Box 871601 Tempe AZ 85287-1601 USA.

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Small-Signal Analysis and Modeling of Asymmetric Source/drain Parasitic resistances for drAM Access Transistors in Low-Power Applications

Small-Signal Analysis and Modeling of Asymmetric Source/Drai...

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International Conference on Simulation of Semiconductor Processes and devices (SISPAd)

作者： Young Pil Kim Matthew Ulrich Praveen Vaidyanathan Venkat Ananthan Chandra Mouli Kunal Parekh R&D Process Development Micron Technology Inc. Boise ID USA

The small-signal conductance technique was extended to extract asymmetric source/drain parasitic resistances. It was also applied in order to analyze the t Wr delay of drAM cell transistors in production and to develop a non-planar cell transistor such as recessed access device (rAd) for low-power drAM cells. Factors limiting the drive current for planar and non-planar access transistors in the low-power drAM cells were discussed

关键词： random access memory data mining Threshold voltage Production Equations research and development delay drives Monitoring Manufacturing

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20V-40V Symmetrical Vertical Trench nMOS (SVT MOS) design for display driver ICs

20V-40V Symmetrical Vertical Trench nMOS (SVT MOS) design fo...

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International Symposium on Power Semiconductor devices and Ics (ISPSd)

作者： M. Annese P. Montanini F. Toia L. Zullino C. Contiero STMicroelectronics FTM-R&D Smart Power & High Voltage Technology Platform Development Agrate-Brianza Agrate Brianza Italy

This paper presents a novel 20V/40V symmetrical vertical trench MOS (SVT MOS) having both drain extension and gate realized in vertical direction respect to the silicon surface. Using silicon depth to realize the gate and to withstand high voltage, carefully designing doping implants and realizing a vertical field oxide, it was possible to reduce more than 60% the device pitch (i.e. spacing between half drain contact and half source contact) maintaining the same performance of equivalent lateral device

关键词： MOS devices displays Voltage Silicon Etching Thin film transistors Lithography doping CMOS technology driver circuits

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800 KV HVdC for Transmission of Large Amount of Power Over Very Long distances

800 KV HVDC for Transmission of Large Amount of Power Over V...

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International Conference on Power System technology (POWErCON)

作者： Gunnar Asplund Urban Astrom Victor Lescale Honorable Doctor of Technology Royal Institute of Technology Sweden R&D manager of HVDC ABB. Manager 800 kV HVDC development project

800 kV HVdC is economically attractive for bulk power transmission of 6000 MW and even 9000 MW per bipole over distances up to 3000 km. With the present progress of r&d converter equipment for 800 kV HVdC will be qualified within short. With proper separation and proper structure of the control and protection and auxiliary systems, the reliability and availability will be as good as, or even better than, for converters at lower voltages.

关键词： HVdC transmission Voltage Power generation economics Hydroelectric power generation Cost function Power generation rivers Africa Power systems Asia

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Highly reliable 256Mb PrAM with Advanced ring Contact technology and Novel Encapsulating technology

Highly Reliable 256Mb PRAM with Advanced Ring Contact Techno...

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Symposium on VLSI technology

作者： Y.J. Song K.C ryoo Y.N. Hwang C.W. Jeong d.W. Lim S.S. Park J.I. Kim J.H. Kim S.Y. Lee J. Kong S. Ahn S.H. Lee J.H. Park J.H. Oh Y.T. Oh J.S. Kim J. Shin J. Park Y. Fai G. Koh G.T. Jeong r.H. Kim H.S. Lim I.S. Park H.S. Jeong H. Jeong K. Kim Advanced Technology Development Semiconductor Research and Development Division Samsung Electronics Company Limited Yongin si Kyunggi South Korea Advanced Technology Development Semicond. R&D Div. Samsung Electron. Co. Ltd. Process Technology Semiconductor R&D Div Samsung Electronics Co. Ltd Yongin Kyunggi-Do Korea

ISBN: (纸本)142440004X

Advanced ring type technology and encapsulating scheme were developed to fabricate highly manufacturable and reliable 256Mb PrAM. Very uniform BEC area was prepared by the advanced ring type technology in which core dielectrics were optimized for cell contact CMP process. In addition, relatively high set resistance was stabilized from encapsulating Ge 2 Sb 2 Te 5 (GST) stack with blocking layers, thus giving rise to a wide sensing window. These advanced ring type and encapsulating technologies can provide great potentials of developing high density 512Mb PrAM and beyond

关键词： Phase change random access memory dielectrics degradation Tellurium Electrodes CMOS technology Planarization Cleaning research and development Manufacturing processes

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Emergency Services in delay Tolerant Environments

Emergency Services in Delay Tolerant Environments

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IEEE Conference on Vehicular technology (VTC)

作者： Murugaraj Shanmugam Srinath Thiruvengadam Christophe Cordier Jean-pierre Le rouzic Siemens AG Corporate Technology Germany France Telecom Research & Development MAPS France France Telecom R&D / MAPS France

There are number of mechanisms and algorithms available to achieve ad hoc communication. However, establishing communication between heterogeneous networks with fragile connectivity, is still a challenging task. Existing transport protocols like TCP are not well suited to networks with instable bandwidth and connectivity. In such environments, services cannot be reliably offered and hence more intelligent protocols and architectures should be used. For such scenarios, we study the feasibility of using opportunistic forwarding to achieve end-to-end communication. In this paper, we investigate the usage of delay tolerant networks based protocols for achieving reliable communication in such scenarios. Specifically, we study the provision of emergency services and show how mobile users could make use of the ad hoc peers to reach an appropriate answering point e.g., public safety answering point using the delay tolerant approach. Moreover, we have extended the usage of dTN for complementary services such as buddy communication.

关键词： Emergency services delay disruption tolerant networking Mobile communication Protocols Peer to peer computing routing Telecommunication network reliability Safety Ad hoc networks

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INFLUENCE OF ELECTrICAL ANd STrUCTUrAL PArAMETErS ON THE PErFOrMANCE OF THE SPACErS IN HOPFEd

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Journal of Electronics(China) 2006年第1期23卷 117-120页

作者： Zhong Xuefei Wilbert van der Poel daniel den Engelsen Yin Hanchun Jin Dong Fei Display Technology R＆D Center Southeast University Nanjing 210096 China LG. Philips Displays Product ＆ Process Development Eindhoven the NetheHands

The HOPping Field Emission display （HOPFEd） is a new architecture for field emission displays. The main difference between a conventional Field Emission display （FEd） device and a ItOPFEd lies in the spacer structure. In a HOPFEd, two dielectric plates, named hop and flu spacer, are sandwiched between the emitter and the front plate. The objective of this spacer structure is to improve the performance oF a FEd substantially with notable contrast, color purity and luminance uniformity. In order to optimize the structure of the device and to make the electron spot on the screen match the requirement of the phosphor dot dimension, the influence of electrical and structural parameters of the device on the electron spot profile was studied by numerical simulation in this paper. Monte Carlo method was employed to calculate the potential distribution inside hop and flu spacers due to secondary electrons mechanism plays an important role in HOPFEd. The results indicated that the potential distribution in the spacers and spot profile depended strongly on the hop voltage, anode voltage and spacer＇s layout. This study may provide a useful theoretical support for optimizing the structure in HOPFEd.

关键词： Hopping field emission display Monte Carlo calculation Hop voltage, Anode voltage Spacer＇s layout

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Abstracts for the 6th Congress of Asian Sleep research Society

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Sleep and Biological rhythms 2009年第4期7卷 A1-A49页

作者： Seog Ju Kim In Kyoon Lyoo Yu-Jin Lee do-Un Jeong Hirohiko Kanai Masanori Ookubo Atsushi Yoshimura Masako Okawa Noto Yamada Takeshi Munezawa Yoshitaka Kaneita Yoneatsu Osaki Hideyuki Kanda Tadahiro Ohtsu Masumi Minowa Kenji Suzuki Susumu Hijuchi Hiroyuki Suzuki Takashi Ohida Takashi Abe Yoko Komada Shoichi Asaoka Yuichi Inoue Jin-Seong Lee Sang-Yong Cho deependra Kumar Hruda N. Mallick Velayudhan M. Kumar Mahesh K. Kaushik Akihiro Karashima Noiihiro Katayama Mitsuyuki Nakao ravindra P. Nagendra Sathiamma Sulekha Sathyaprabha T. Narasappa Pradhan Nityanadan Bindu M. Kutty M. Nirmala P. N. ravindra Basavaraj ramappa Tubaki T. N. Sathyaprabha d. Sudhakar G. S. Lavekar C. r. Chandrashekar Kazuyoshi Kitaoka Mika Shimizu Sachiko Chikahisa Kazuo Yoshizaki Hiroyoshi Sei Jong-Won Kim Misa Takegami Shin Yamazaki Yasuaki Hayashino rei Ono Koji Otani Miho Sekiguchi Shinichi Konno Shunichi Fukuhara Antonia J. Jakobson Paul Fitzgerald russell Conduit Xin Shirley Li Siu Ping Joyce Lam Wai Man Mandy Yu Yun Kwok Wing Kazue Okamoto-Mizuno Koh Mizuno Mituaki Yamamoto Shuichiro Shirakawa Hirokazu doi Mikako Kato Kazuyuki Shinohara Masako Tamaki Shiori Matsuda Katsuo Yamazaki Tadao Hori Keiko Ogawa Kazumi Takahashi Kunio Kitahama Katuo Yamazaki Yoshimasa Koyama Kohei Shioda Yugo Ueda Yukiko Nakamura Clara Inoue Kazushige Goto Sunao Uchida Yuko Morita Yoshiko Honda Tohru Kodama Mari Hagihara Toru Nakajima Masato Saito Yoshihiko Koga Shinichiro Tanaka Hiroshi Yamadera Madoka Takahara Sachiko Suwa Minoru Onozuka Sadao Sato Fumiharu Togo Taiki Komatsu Takeshi Mitani Jongbae Choi Bin Zhang Taeko Sasai Hiromi Mitsubayashi Mitsuhiro Ohtsu Isao Hasegawa Tatsuya Ishii Akira Komori Asami Suzuki Yue Nakahara Mitsuyasu Hiroki Mariko Nakauma Nobuo Someya Tomomasa Ochiai Shouhei Komori rayleigh Ping-Ying Chiang Zai-Ting Yeh Seong T. Kim Seung H. Yoon Jeong S. Kwon Jong H. Choi Hyung J. Ahn Youngsoo Kim Bolortuya Yunren Lichao Chen radhika Basheer robert W. Mccarley robert E. Strecker Makoto Honda Tetsuaki Arai Miyuki Fukazawa Yutaka Honda Kuniaki T Department of Psychiatry Gachon University of Medicine and Science Incheon Republic of Korea Department of Psychiatry Seoul National University Seoul Republic of Korea Department of Neuropsychiatry and Center for Sleep and Chronobiology Seoul National University Hospital Seoul Republic of Korea Department of Neuropsychiatry Seoul National University Hospital Seoul Republic of Korea Seoul National University Hospital Seoul Republic of Korea Department of Psychiatry Shiga University of Medical Science Otsu Japan Division of Public Health Department of Social Medicine Nihon University School of Medicine Tokyo Japan Department of Public Health Nihon University School of Medicine Tokyo Japan Division of Environmental and Preventive Medicine Department of Social Medicine Faculty of Medicine Tottori University Yonago Japan Department of Hygiene and Preventive Medicine Fukushima Medical University Fukushima Japan Department of Public Health Showa University School of Medicine Tokyo Japan Faculty of Humanities Seitoku University Matsudo Japan Section on Behavioral Science Division of Clinical Research National Hospital Organization Kurihama Alcoholism Center Yokosuka Japan Department of Otolaryngology Second Hospital Fujita Health University Nagoya Japan National Hospital Organization Kurihama Alcoholism Center Kanagawa Japan Metropolitan Police Department Criminal Investigation Laboratory Tokyo Japan Japan Somnology Center Neuropsychiatrie Research Institute Tokyo Japan Department of Somnology Tokyo Medical University Tokyo Japan Japan Somnology Center Neuropsychiatric Research Institute Tokyo Japan Department of Somnology Tokyo Medical and Dental University Tokyo Japan Center for Sleep and Chronobiology Department of Psychiatry and Behavioral Science Seoul National University College of Medicine Seoul Republic of Korea Department of Psychiatry and Behavioral Science Center for Sleep and Chronobiology Seoul Republic of Korea Department of Physiology Al

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A Study of Intermetallic Compounds in Tin Bumps during Multi-reflows

A Study of Intermetallic Compounds in Tin Bumps during Multi...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Lei Nie Jian Cai Xiao Peng Nan Zhang Shuidi Wang Songliang Jia Institute of Microelectronics Tsinghua University Beijing China Electronic Packaging Technology Research & Development Center RIIT Tsinghua University Beijing China Institute of Microelectronics Tsinghua University Beijing 100084 China Electronic Packaging Technology R&D Center RIIT Tsinghua University Beijing 100084 China

An electroplating pure tin bumping technology has been developed in house with commercial chemicals. Sputtered TiW and Cu were used as under bump metallurgy (UBM). The tin bumps were peripheral distributed on the die. The electroplated bumps had mushroom shape, and the height is about 70mum. The as-reflow bumps had sleek shape, and the diameter is about 100mum. For as-reflow bumps, scanning electron microscope was used for observing the microstructure of interface, and energy dispersive X-ray microanalysis was used for investigating the composition of the intermetallic compounds. Multireflow tests were used as accelerating tests for tin bumps. The samples reflowed 1 times to 10 times respectively. Ball shear tests were used for evaluate the strength of different samples of multi-reflow tests. There are two layers of intermetallic compounds between copper and tin, which are Cu6Sn5 and Cu3Sn. For as-reflow bumps, the thickness of Cu3Sn layer is too thin to detect, and its growth need additional contact time. As the reflows time increased, Cu6Sn5 and Cu3Sn layers both grow, and the thickness of Cu6Sn5 is thicker than that of Cu3Sn. The total thickness of intermetallic compound has an exponential relationship with the times of reflow. The mechanism of intermetallic compounds growth is the diffusion of liquid tin to solid copper. The simplified diffusion model in the intermetallic interface is similar to one dimension nonequilibrium diffusion in the plate. The shear strength results of different samples which had multireflow tests were found to have little discrepancy with each other, that means the performance of tin bumps were stable

关键词： Intermetallic Tin Testing Copper Chemical technology Shape Scanning electron microscopy Microstructure dispersion Life estimation

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