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检索条件"机构=R&D Technology Development"

共 1037 条记录，以下是871-880 订阅

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Facet Passivation of GaInAsP/InP Laser diodes by Aluminum Ultrathin Layer Insertion

Facet Passivation of GaInAsP/InP Laser Diodes by Aluminum Ul...

引用

IEEE International Semiconductor Laser Conference

作者： H. Ichikawa C. Fukuda K. Hamada T. Nakabayashi Analysis technology research center Sumitomo Electric Industries Limited Yokohama Japan Transmission devices Research and Development laboratories Sumitomo Electric Industries Limited Yokohama Japan Transmission Devices R&D Labs. Sumitomo Electr. Ind. Ltd. Yokohama

We demonstrated that facet degradation is successfully suppressed by inserting aluminum ultra-thin layer between semiconductor and dielectric coating films. We also clarified that aluminum layer suppress lack of phosp... 详细信息

ISBN: (纸本)078039559X

关键词： Passivation Indium phosphide diode lasers Aluminum degradation Coatings Optical surface waves Argon Oxidation Optical films

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Band-Edge High-Performance High-k/Metal Gate n-MOSFETs Using Cap Layers Containing Group IIA and IIIB Elements with Gate-First Processing for 45 nm and Beyond

Band-Edge High-Performance High-k/Metal Gate n-MOSFETs Using...

引用

Symposium on VLSI technology

作者： T.C. Chen G. Shahidi S. Guha M. Ieong M.P. Chudzik r. Jammy P. ronsheim P.E. Batson Y. Wang d.L. Lacey J.-P. Locquet P. Jamison A. Callegari E. Cartier M. Steen M. Copel J. Arnold S. Brown J. Stathis S. Zafar Y.H. Kim B. doris B.P. Linder N.A. Bojarczuk V.K. Paruchuri V. Narayanan IBM Semiconductor Research and Development Center (SRDC) Yorktown Heights NY USA IBM Systems and Technology Division Hopewell Junction NY USA IBM Semicond. R&D Center T. J. Watson Res. Center Yorktown Heights NY

We have fabricated electrically reliable band-edge (BE) high-k/metal nMOSFETs stable to 1000degC, that exhibit the highest mobility (203 cm 2 /Vs @ 1MV/cm) at the thinnest T inv (1.4 nm) reported to date. These stacks are formed by capping HfO 2 with ultra-thin layers containing strongly electropositive gp. IIA and IIIB elements (e.g. Mg and La), prior to deposition of the TiN/Poly-Si electrode stack, in a conventional gate-first flow. Increasing the cap thickness tunes the V t /V fb from a midgap position to BE while maintaining high mobility and good PBTI. The addition of La can enhance the effective k value of the dielectric stack, resulting in EOTs < 1nm. Short channel devices with band edge characteristics are demonstrated down to 60 nm. Finally, possible mechanisms to explain the nFET V t shift are discussed

关键词： High K dielectric materials High-K gate dielectrics MOSFET circuits Hafnium oxide Tin Channel bank filters Electrodes Electron mobility Jamming research and development

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Highly Manufacturable Single Metal Gate Process Using Ultra-Thin Metal Inserted Poly-Si Stack (UT-MIPS)

Highly Manufacturable Single Metal Gate Process Using Ultra-...

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International Electron devices Meeting (IEdM)

作者： Sung Kee Han Hyung-Suk Jung Hajin Lim Min Joo Kim Cheol-kyu Lee Mong sub Lee Young-sub You Hion Suck Baik Young Su Chung Eunha Lee Jong-Ho Lee Nae In Lee Ho-Kyu Kang Advanced Process Development Team System LSI Division Samsung Electronics Company Limited Yongin si Gyeonggi South Korea Semiconductor R&D Center Memory Division Samsung Electronics Company Limited South Korea AE Center Samsung Advanced Institute of Technology Gyeonggi South Korea

The authors have successfully developed a mass production friendly single metal gate process utilizing an ultra-thin metal inserted poly-Si stack (UT-MIPS) structure. First, the inserted metal gate thickness effects on device performances are carefully examined, and then the other parameters are optimized to give the best performance. As a results, low and symmetrical short channel Vth (0.44/-0.48 V for n/pMOS) and excellent drive currents (620/230 muA/mum for n/pMOS at Ioff =20pA/mum and Vdd=1.2 V) are obtained without using any mobility enhancement strain technology. The estimated operation voltage for 10 years lifetime of optimized UT-MIPS devices (1.25 V for nMOS PBTI and 1.5 V pMOS NBTI) are well beyond the 1.2 V, showing the good reliability characteristics of UT-MIPS devices as well

关键词： Manufacturing processes Mass production Optimized production technology dielectrics Large scale integration research and development Capacitive sensors Life estimation Lifetime estimation Voltage

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reliability Issues and Models of sub-90nm NANd Flash Memory Cells

Reliability Issues and Models of sub-90nm NAND Flash Memory ...

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2006 8th International Conference on Solid-State and Integrated Circuit technology

作者： Hong Yang Hyunjae Kim Sung-il Park Jongseob Kim Sung-Hoon Lee Jung-Ki Choi duhyun Hwang Chulsung Kim Mincheol Park Keun-Ho Lee Young-Kwan Park Jai Kwang Shin Jeong-Taek Kong CAE Team Memory DivisionSemiconductor BusinessSamsung Electronics Co.Ltd.San Nano CSE Project Team Samsung Advanced Institute of Technology R&D TEST Engineering Group Samsung Electronics Co.Ltd. Process Development Team Samsung Electronics Co.Ltd. Flash Process Architecture Team Semiconductor BusinessSamsung Electronics Co.Ltd.

ISBN: (纸本)1424401607

The reliability issues,including 100k cycle's endurance and 2 hours high temperature storage（HTS:150℃, 200℃and 250℃） of sub-90nm NANd Flash cells,are ***,the trap generation models in endurance and interface trap recovery model in HTS are *** characteristics show that the interface trap and bulk trap generation have a power-dependence on program/erase cycle count(△N,△N∝cycle^m).The exponent of interface trap generation both program and erase are 0.62;while in bulk trap generation,the exponent for the cycle count is 0.30,which is extracted only from the erased cells due to varying stored charges of programmed cells during tunnel oxide *** HTS characteristics show that the interface trap recovery and electron-detrapping are the major mechanisms for sub-90nm NANd Flash memory,while stress induced leakage current（SILC） is almost ***,based on the reaction-diffusion （r-d）model and Arrhenius approximation,the simplified interface recovery model in HTS is proposed as:dN/N=-k·exp（-E/kT）.dt.

关键词： HTS reliability Issues and Models of sub-90nm NANd Flash Memory Cells

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Trap Layer Engineered FinFET NANd Flash with Enhanced Memory Window

Trap Layer Engineered FinFET NAND Flash with Enhanced Memory...

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Symposium on VLSI technology

作者： Y. Ahn J.-d. Choe J. Lee d. Choi E. Cho B. Choi S.-H. Lee S.-K. Sung C.-H. Lee S. Cheong d. Lee S. Kim d. Park B.-I. ryu Device Research Team Samsung Electronics Co. Yongin-City Gyeonggi-Do Korea Semiconductor R&D Center Samsung Electronics Co. Yongin-City Gyeonggi-Do 449-711 Korea Process Development Team Samsung Electronics Co. Yongin-City Gyeonggi-Do Korea Manufacturing Technology Team Samsung Electronics Co. Yongin-City Gyeonggi-Do Korea

This paper presents the trap layer engineered body-tied FinFET device for MLC NANd flash application. The device design parameters for high density NANd flash memory have been considered, and the advantages of FinFET structure and high-k blocking dielectric in such device have been demonstrated. Based on the WN nano-dot memory device, the trap layer engineering using nitride layer has been performed, and the results show that the memory window is improved from 2.6 V to 7.8 V by utilizing engineered trap layer at 14 MV/cm F-N programming, and it is proposed as a possible MLC NANd device structure

关键词： FinFETs Electron traps Manufacturing processes Pulp manufacturing Semiconductor device manufacture research and development High K dielectric materials High-K gate dielectrics dielectric devices Nanoscale devices

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Effect of Laser Bias Current to the Third Order Intermodulation in the radio over Fibre System

Effect of Laser Bias Current to the Third Order Intermodulat...

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International rF and Microwave Conference, rFM

作者： S. Yaakob W. r. Wan Abdullah M. N. Osman A. K. Zamzuri r. Mohamad M. r. Yahya A. F. Awang Mat M. r. Mokhtar H. A. Abdul rashid TM Research and Development Sdn Bhd UPM-MTDC Technology Incubation Center One Serdang Selangor Darul Ehsan Malaysia TM R&D Sdn Bhd Serdang Selangor Malaysia TM R&D Sdn Bhd Idea Tower UPM-MTDC Incubation Centre One Lebuh Silikon 43400 Serdang Selangor Malaysia. wanrazli@tmrnd.com.my romli@tmrnd.com.my razman@tmrnd.com.my ridz@mmu.edu.my TM R&D Sdn Bhd Idea Tower UPM-MTDC Incubation Centre One Lebuh Silikon 43400 Serdang Selangor Malaysia. drfatah@tmrnd.com.my romli@tmrnd.com.my razman@tmrnd.com.my ridz@mmu.edu.my Faculty of Engineering Multimedia University Cyberjaya Selangor Malaysia Faculty of Engineering Multimedia University Jalan Multimedia 63100 Cyberjaya Selangor Malaysia. hairul.azhar@mmu.edu.my romli@tmrnd.com.my razman@tmrnd.com.my ridz@mmu.edu.my

Third order intermodulation (IM 3 ) can cause non-linearity effects which result in interference and crosstalk between the subcarriers in radio over fibre (rOF) transmissions. This paper presents the experimental results of the effect of varying the magnitude of the laser bias current on the IM 3 in an rOF system with direct modulation. We also investigate the behaviour of the system spurious free dynamic range (SFdr) with the bias current variation. The results show that there will be an optimum bias current range for a given range of the radio frequency (rF) input power in order to minimise the IM 3 effect and obtain the best possible SFdr for the system

关键词： Fiber lasers Optical fibers radio frequency Optical modulation Semiconductor lasers Fiber nonlinear optics Optical crosstalk Intensity modulation Masers Multimedia systems

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Optical Burst Switching Node with Sub-millisecond Granularity Equipped with Agile Tunable Wavelength Converter and Waveguide Amplifier

Optical Burst Switching Node with Sub-millisecond Granularit...

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32nd European Conference on Optical Communication (ECOC 2006),vol.4

作者： r. Inohara K. Nishimura Y. Horiuchi M. Usami A. Al Amin M. Takenaka K. Shimizu T. Kagimoto T. Kurobe A. Kasukawa H. Arimoto S. Tsuji Y. Kondo M. Ono J. Kageyama N. Sugimoto I. Ogura T. Hatta H. Onaka Y. Nakano KDD Research and Development Laboratories Inc. Fujimino Saitama Japan KDDI R&D Laboratories Inc. Saitama Japan RCAST the University of Tokyo Optoelectronic Industry and Technology Development Association (OITDA) RCAST the University of Tokyo Japan The Furukawa Electric Co. Ltd. Japan 4: Hitachi Ltd. Japan 5: Asahi Glass Co. Ltd. Japan 6: NEC Corporation Japan 7: Mitsubishi Electric Corporation Japan Fujitsu Laboratories Limited Japan

An optical switching node with sub-millisecond granularity is demonstrated. The node is equipped with shared wavelength converter for contention resolution with microsecond tuning speed and compact gain block for loss... 详细信息

关键词： Optical waveguides Optical burst switching Optical wavelength conversion Semiconductor optical amplifiers Optical amplifiers Optical packet switching Stimulated emission Matrix converters Transmission line matrix methods Optical switches

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New architecture of realizing seamless connectivity and cooperative control for home network systems

New architecture of realizing seamless connectivity and coop...

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IEEE International Symposium on Circuits and Systems (ISCAS)

作者： H. Ikebe K. Ogawa H. Takernura Y. Hatayama Digital Systems Development Center Technology R&D Headquarters SANYO Electric Co. Ltd Japan

This paper proposes a new home network architecture for realizing flexible scalability and seamless connectivity and cooperative control. In a home, there are devices which have varying processing power so these devices may support different protocols. They are required to be able to be controlled seamlessly regardless of the protocol. By controlling these devices, cooperative control is desired. A home network system is also required to be able to configure the system scale according to the user's needs. This architecture makes it possible to provide seamless connectivity by protocol translation and to control devices cooperatively by managing rules in a home server. It also supports flexible scalability, with a new discovery mechanism, from a small-scale system without a home server, to a large-scale system with a home server. We developed and confirmed a prototype system using this architecture.

关键词： Control systems Home automation Network servers Protocols Scalability Large-scale systems Power system management digital systems research and development Prototypes

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Full Hd 1920 × 1080 Pixel digital d-ILA™ Microdisplay Projector technology

Full HD 1920 × 1080 Pixel Digital D-ILA™ Microdisplay Proj...

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SMPTE Technical Conference

作者： S. Shimizu S. Nakagaki K. doi W.P. Bleha Victor Company of Japan Ltd Technology Development Division Yokosuka Japan JVC North America R&D Center Cypress CA 90630

JVC1 has developed a fully digital drive d-ILA LCOS microdisplay device, which has a native resolution of full Hd (1920 times 1080 pixels) and contrast ratio greater than 5000:1. The new devices have been combined in 3 device rGB configuration with advanced video processing circuitry for consumer rear projection TV applications.

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Microcell urban propagation channel analysis using measurement data

Microcell urban propagation channel analysis using measureme...

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IEEE Conference on Vehicular technology (VTC)

作者： M. Ghoraishi J.-i. Takada T. Imai Department of International Development Engineering Tokyo Institute of Technology Tokyo Japan R&D Center NTT DoCoMo Inc. Kanagawa Japan

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