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Journal of Vacuum Science & technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 2005年第2期23卷 702-706页

作者： Jae-Hong Park Jin-San Moon Jae-Hee Han Alexander S. Berdinsky Ji-Beom Yoo Chong-Yun Park Joong-Woo Nam Jonghwan Park Chun Gyoo Lee deok Hyeon Choe Center for Nanotubes and Nanostructured Composites Sungkyunkwan University 300 Chunchun-Dong Jangan-Gu Suwon 440-746 Korea Technology Development 3 Corporate R&D Center Samsung SDI 428-5 Gongse-Ri Kiheung-Eup Yongin 449-902 Korea

A carbon nanotube (CNT) paste was synthesized by mixing multiwalled CNTs (MWNTs), organic vehicles, and inorganic binder. The paste with spin on glass (SOG) showed improved uniformity, dispersion, and adhesion characteristics of the CNT paste layer. The emission characteristics of CNT paste with SOG were improved, and compared to those of a CNT paste with a glass frit. When the organic vehicle was changed from ethyl cellulose to acryl solution, current density of CNT paste increased. The firing condition for CNT pastes was investigated and optimized. It was found that firing at 450 °C under N2 was the most suitable condition for pastes with MWNTs. We obtained stable and high emission current of 100 mA at an electric field of 8.35V∕μm from CNT paste with SOG printed on a Ni plate.

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Automatic generation of software/hardware co-emulation interface for transaction-level communication

Automatic generation of software/hardware co-emulation inter...

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International Symposium on VLSI design, Automation and Test

作者： Young-Il Kim Ki-Yong Aim Heejun Shim Wooseung Yang Young-Su Kwon Ando Ki Chong-Min Kyung Department of EECS Korea Advanced Institute of Science and Technology Daejeon Korea Research & Development Center Dynalith Systems Company Limited Daejeon South Korea Dynalith Systems R&D Center Daejeon Korea Department of EECS Korea Advanced Institute of Science and Technology Daejeon South Korea

ISBN: (纸本)0780390601

This paper presents a methodology for generating interface of a co-emulation system where processor and emulator execute testbench and design unit, respectively while interacting with each other. To reduce the communication time between the processor and emulator, data transfers are performed in transaction level instead of signal level. To do this, transactor should be located near the dUT mapped on the hardware emulator. Consequently transactor is described in a synthesizable way. Moreover, the transactor design depends on both emulator system protocol and dUT protocol. Therefore, transactor description would not only be time-consuming but also error-prone task. Based on the layered architecture, we propose an automated procedure for generating co-emulation interface from platform-independent transactor. We have also discussed about the practical issues on multiple channel and clock skew problem.

关键词： Hardware Protocols Computer architecture Software systems Engines System testing Clocks Software testing Emulation decoding

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Field emission properties of carbon nanotube paste on cathode with a curved surface for microwave power amplifier

Field emission properties of carbon nanotube paste on cathod...

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International Conference on Vacuum Nanoelectronics (IVNC)

作者： Jae-Hee Han Jae Hong Park A.S. Berdinsky Ji-Beom Yoo Chong-Yun Park Hae Jin Kim Jin Ju Choi Joong-Woo Nam Chun Kyu Lee Center for Nanotubes and Nanostructured Composites Sungkyunkwan University Suwon South Korea School of Electronics Engineering Gwangwoon University Seoul South Korea Technology Development 3 Corporate R&D Center Samsung SDI Company Limited Yongin si South Korea

In this report, we present field emission properties of the carbon nanotube (CNT) paste on cathode with a curved surface for MPA. The CNT paste was prepared using a mixture of multiwalled CNTs powders synthesized by chemical vapor deposition method, organic vehicles, and inorganic binders. We made use of both spin on glass (SOG) and a sensitizer as an inorganic binder and additive to the CNT paste. Then the paste was rubbed over a round cathode (diameter, d-4.3 mm) with a curved surface (a radius of curvature, r/spl sim/9.7 mm) designed specifically for our X-band (8-12 GHz) TWT-MPA.

关键词： Carbon nanotubes Cathodes Microwave amplifiers Power amplifiers High power amplifiers Electron tubes Operational amplifiers Pulse amplifiers Voltage design engineering

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Multi-layer cross-point binary oxide resistive memory (OxrrAM) for post-NANd storage application

Multi-layer cross-point binary oxide resistive memory (OxRRA...

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International Electron devices Meeting (IEdM)

作者： I.G. Baek d.C. Kim M.J. Lee H.-J. Kim E.K. Yim M.S. Lee J.E. Lee S.E. Ahn S. Seo J.H. Lee J.C. Park Y.K. Cha S.O. Park H.S. Kim I.K. Yoo U. Chung J.T. Moon B.I. ryu Process Development Team Samsung Electronics Co. Ltd. Yongin si South Korea Process Development Team Semiconductor R&D Center Samsung Electronics Company Limited Yongin si Gyeonggi South Korea Devices Lab. Samsung Advanced Institute of Technology Yongin-City Kyeonggi-Do Korea Process Development Team Samsung Electronics Co. Ltd.

Feasibility of the multi-layer cross-point structured binary oxide resistive memory (OxrrAM) has been tested for next generation non-volatile random access high density data storage application. Novel plug contact type bottom electrode (plug-BE) could reduce active memory cell diameter down to 50nm with smaller operation current and improved switching distributions. With 2 additional masks, one layer of plug-BE included cross-point memory array could be added on top of another one. No signal of inter-layer interference has been observed. Also, prototype binary oxide based diodes have been fabricated for the purpose of suppressing intra-layer interference of cross-point memory array

关键词： Electrodes Testing Memory Plugs Energy consumption CMOS technology Moon research and development Consumer electronics Electronic mail

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dual stress liner enhancement in hybrid orientation technology

Dual stress liner enhancement in hybrid orientation technolo...

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Symposium on VLSI technology

作者： C.d. Sheraw M. Yang d.M. Fried G. Costrini T. Kanarsky W.-H. Lee V. Chan M.V. Fischetti J. Holt L. Black M. Naeem S. Panda L. Economikos J. Groschopf A. Kapur Y. Li r.T. Mo A. Bonnoit d. degraw S. Luning d. Chidambarrao X. Wang A. Bryant d. Brown C.-Y. Sung P. Agnello M. Ieong S.-F. Huang X. Chen M. Khare IBM Syst. & Technol. Group IBM Semicond. R&D Center USA IBM Thomas J. Watson Research Center Yorktown Heights NY USA IBM Systems and Technology Group USA Advanced Micro Devices IBM Semiconductor Research and Development Center Hopewell Junction NY USA

Hybrid orientation technology (HOT) has been successfully integrated with a dual stress liner (dSL) process to demonstrate outstanding PFET device characteristics in epitaxially grown [110] bulk silicon. Stress induced by the nitride MOL liners results in mobility enhancement that depends on the designed orientation of the gate, in agreement with theory. Compressive stressed liner films are utilized to increase HOT PFET saturation current to 635 uA/um I/sub dSat/ at 100 nA/um I/sub OFF/ for V/sub dd/=1.0 V at a 45 nm gate length. The AC performance of a HOT ring oscillator shows 14% benefit from [110] silicon and an additional 8% benefit due to the compressive MOL film.

关键词： Silicon Compressive stress dSL ring oscillators Fabrication Etching Implants Tungsten research and development Hybrid junctions

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Fabrication of 3d trench PZT capacitors for 256Mbit FrAM device application

Fabrication of 3D trench PZT capacitors for 256Mbit FRAM dev...

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International Electron devices Meeting (IEdM)

作者： June-Mo Koo Bum-Seok Seo Sukpil Kim Sangmin Shin Jung-Hyun Lee Hionsuck Baik Jang-Ho Lee Jun Ho Lee Byoung-Jae Bae Ji-Eun Lim dong-Chul Yoo Soon-Oh Park Hee-Suk Kim Hee Han Sunggi Baik Jae-Young Choi Yong Jun Park Youngsoo Park Nano Devices Laboratory Samsung Advanced Institute of Technology Yongin si South Korea Nano Fabrication Center Samsung Advanced Institute of Technology Yongin si South Korea AE Center Samsung Advanced Institute of Technology Yongin si South Korea Process Development Team Semiconductor R&D Division Samsung Electronics Company Limited Yongin si South Korea Department of Materials Science and Engineering Pohang University of Science and Technology Pohang South Korea Pohang Accelerator Laboratory Pohang University of Science and Technology Pohang South Korea

ISBN: (纸本)078039268x

We fabricated trench PbZr x Ti 1-x O 3 (PZT) capacitors that can be used in 256Mbit 1T-1C FrAM devices. The capacitor has 0.25mum diameter and 0.4mum depth. Three layers, Ir(20nm)/PZT(60nm)/Ir(20nm), were deposited in SiO 2 trench holes by ALd and MOCVd. Both columnar and granular grains were formed on the sidewalls of the trench capacitors, and their relative portion had strong size dependence. The trench capacitors with more columnar PZT grains showed good switching behavior under 2.1V external bias and 19 to 24 muC/cm 2 remnant polarization

关键词： Fabrication Capacitors random access memory Ferroelectric films Nonvolatile memory Polarization Materials science and technology Laboratories MOCVd Ferroelectric materials

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real time 3d nonlinear microscopy

Real time 3D nonlinear microscopy

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Conference on Lasers and Electro-Optics Europe (CLEO EUrOPE)

作者： J. Fekete A. Banyasz r. Szipocs G. Katona A. Lukacs B. Csaszar Z. Varallyay A. Saghy P. Maak B. rozsa E.S. Vizi Research Institute of Solid State Physics and Optics Budapest Hungary Research Institute for for Solid State Physics and Optics Budapest Hungary Department for Pharmacology Institute for Experimental Medicine R&D Ultrafast Lasers Kft. Budapest Hungary Budapest University of Technology and Economics Budapest Hungary Research and Development Ultrafast Lasers Kft Budapest Hungary Institute for Experimental Medicine Department for Pharmacology Budapest Hungary

We propose a nonlinear microscope scheme being capable of simultaneous, 3d investigation of the electric activity pattern of neural networks or signal summation rules of individual neurons in a 0.6times0.6times 0.2 mm... 详细信息

关键词： Microscopy Neurons Spatial resolution Ultrafast optics Biomedical optical imaging Nonlinear optics Laser theory Biomedical imaging Neural networks Arithmetic

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Post-fluorination of fluoride films for VUV lithography in order to improve their optical properties

Post-fluorination of fluoride films for VUV lithography in o...

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Optical Interference Coatings, OIC 2004

作者： Taki, Yusuke Watanabe, Shunji Tanaka, Akira R&D Section Lens Engineering Development Dept. Core Technology Center Nikon Corporation 10-1 Asamizodai 1-chome Kanagawa Sagamihara228-0828 Japan

Post-fluorination process that consists of 'fluorination of F-poor areas' and 'modification to denser structure' has been developed. This process reduces the optical losses of fluoride films and preven... 详细信息

ISBN: (纸本)3540003649

关键词： Fluorination

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design and Performance Evaluation of roaming Service base on MIP in Heterogeneous Network

Design and Performance Evaluation of Roaming Service base on...

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The 2004 Joint Conference of the 10～(th) Asia-Pacific Conference on Communications and the 5～(th) International Symposium on Multi-dimensional Mobile Communications

作者： SeongSoo Park New Technology Development Team Network R&D Center SK Telecom

In this paper, we describe the roaming service with mobile IP between public WLAN and cdma2000 1x design, and show the implementation in SK Telecom cellular network. In terms of network configuration, the coverage of public WLAN network is overlapped with that of cellular network. In this configuration, mobile terminal will decide the access system among the available systems. We propose the roaming method based on measuring the power of WLAN signal in heterogeneous network environments, and implement it. In order to confirm the effectiveness of our roaming method, we apply our proposed solution to both seamless roaming service and VOd streaming service.

关键词： Mobile IP(MIP), Seamless roaming, Public WLAN, Cellular Network

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Some Items of Interest to Process r&d Chemists and Engineers

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Organic Process research & development 2005年第5期9卷 522-536页

作者： Mark McLaughlin Silvina García-rubio Ulf Tilstam ramaiah Muthyala Octavio Augusto Ceva Antunes Trevor Laird Ganapati d. Yadav Andrei Zlota Merck & Co. Inc. Rahway New Jersey 07065 U.S.A. E-mail: Albany Molecular Research Inc. Syracuse Research Center 7001 Performance Drive North Syracuse New York 13212 U.S.A. E-mail: Lilly Development Centre S.A. Parc Scientifique de Louvain-la-Neuve Rue Granbonpre 11 B-1348 Mont-Saint-Guibert Belgium E-mail: Department of Medicinal Chemistry University of Minnesota College of Pharmacy 7-125E Weaver-Densford Hall 308 Harvard Street S.E. Minneapolis Minnesota 55455 U.S.A. E-mail: Departamento de Quimica Inorganica Instituto de Quimica UFRJ CT Bloco A Lab. 641 Cidade Universitaria Rio de Janeiro RJ 21949-900 Brazil E-mail: Editor Department of Chemical Engineering University Institute of Chemical Technology University of Mumbai Matunga Mumbai - 400 019 India E-mail: Chemical R&D Sepracor Inc. 84 Waterford Drive Marlborough Massachusetts 01752 U.S.A. E-mail:

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