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International Electron devices Meeting (IEdM)

作者： T. Ogata M. Inoue T. Nakamura N. Tsuji K. Kobayashi K. Kawase H. Kurokawa T. Kaneoka Y. Ohno H. Miyoshi ULSI Development Center Mitsubishi Electronic Corporation Itami Hyogo Japan Ryoden Semiconductor System Engineering Corporation Itami Hyogo Japan Memory IC Division Mitsubishi Electronic Corporation Itami Hyogo Japan Advanced Technology R&D Center Mitsubishi Electronic Corporation Amagasaki Hyogo Japan

We have statistically analyzed 28800 cells of arrayed stacked gate transistors, and, for the first time, we discuss the effectiveness of NO and N/sub 2/O nitridation in suppressing microscopic SILC (mSILC). We have found that NO nitridation is more effective in suppressing the mSILC than N/sub 2/O nitridation and is very promising for the reduction of bit failures.

关键词： Microscopy dielectric substrates MOS capacitors Electron traps Stress dielectric measurements Charge carrier processes dielectric films Leakage current Gases

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Least-hop path planning using neural networks

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Electronics and Communications in Japan (Part I: Communications) 1998年第8期80卷

作者： Haruko Kawahigashi Ken-ichi Tanaka Kazuyoshi Oshima Mitsubishi Electric Corp. Information Technology R&D Center Kamakura Japan 247 Advanced Technology R&D Center Amagasaki Japan 661 Information & Communication Systems Development Center Kamakura Japan 247

recently, application of neural networks using their parallel processing feature has progressed. This paper proposes a routing method using a neural network and based on dynamic programming. The proposed method finds the least-hop path between two points in a communication network. The method consists of the application of disturbance to the destination, propagation of the disturbance to the source, and search for the shortest path from the source to the destination, using the distribution of the influences of the disturbance at each node. © 1997 Scripta Technica, Inc. Electron Comm Jpn Pt 1, 80(8): 1–6, 1997

关键词： neural network broad band-ISdN network design network theory data communication network network technology

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Investigation of Pt/Ta diffusion barrier using hybrid conductive oxide (ruO2) for high dielectric applications

Journal of Vacuum Science & Technology B: Microelectronics a...

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Journal of Vacuum Science & technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 1998年第3期16卷 1137-1141页

作者： dong-Soo Yoon Hong Koo Baik Sung-Man Lee Sang-In Lee Hyun ryu Hwack Joo Lee Department of Metallurgical Engineering Yonsei University Seoul 120-749 Korea Department of Materials Engineering Kangwon National University Chuncheon Kangwon-Do 200-701 Korea Technology Development Semiconductor R&D Center Samsung Electronics Co. San#24 Nongseo-Lee Kiheung-Eup Yongin-City Kyungki-Do 449-900 Korea New Material Evaluation Center KRISS Taejon 305-600 Korea

The Pt/Ta diffusion barrier using hybrid conductive oxide (ruO2) for dynamic random access memory and ferroelectric random access memory capacitor bottom electrodes is proposed. The thermal stability of Pt+ruO2 (50 nm)/Ta+ruO2 (50 nm)/TiSi2/poly-Si/SiO2/Si contact system is investigated and compared to that of the Pt(50 nm)/Ta(50 nm)/TiSi2/poly-Si/SiO2/Si contact system. The Pt+ruO2/Ta+ruO2/TiSi2/poly-Si/SiO2/Si contact system sustained its structure up to 650 °C, whereas Pt/Ta/TiSi2/poly-Si/SiO2/Si contact system was completely degraded after annealing at 650 °C. In the former case, the addition of ruthenium dioxide (ruO2) into the Pt bottom electrode layer led to retardation of the oxygen indiffusion, preventing the indiffusion of oxygen up to 650 °C. In addition, the Ta+ruO2 diffusion barrier showed an amorphous structure and ruO2 is bound to the Ta matrix, inhibiting the interdiffusion of O, Pt, and Si through grain boundaries which can act as fast diffusion paths up to high temperatures. Therefore, it appeared that the barrier properties of Pt/Ta diffusion barrier are improved by using hybrid conductive oxide (ruO2).

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recapitalizing the Navy through optimized manning and improved reliability

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NAVAL ENGINEErS JOUrNAL 1998年第6期110卷 61-72页

作者： Anderson, dE Malone, TB Baker, CC Mr. David E. Anderson:is a Navel Engineer with the Naval Sea Systems Command where he is currently assigmd to the HumanSystems Integration branch. Mr Anderson has a Bachelor of Science degree an Environmental Engineering from Flurida Technological University and a Master's in Environmental Engiwering from the University of Central Flurida. He currentEy is an HSI manager for a number oflvay R&D and skig acquisition efforts. Dr. Thomas B. Malone:received a Ph.D. in Experimental Psychology from Fordham University in 1964. He is President of Carlow International Incorporated an organization dedicated to human factors research and development with emphasis an mantime systems. He has directed over 350 programs and projects in his 33 year career and is responsible for overall management of all contract programs within the Corporation. He is a Past President of the Human Factors and E r g m i c s Society (HFES) of which he is a Fellow. He is also a Fellow of the Washington Academy of Sciences He was selected as a member of the N A S Space Sciences Technical Advisuiy Committee on Technoloo Requirements for Human Performance on Long Duration Space Missions in 2989 and 90. He was elected as the First Chair of the Systems Development Technical Group of the HFES. Dr Malone is currently managing eflorts to devehp and auto- mate standardized processes for canducting human systems integration (HSI) in the military weapon systems acquisition process and fov developing automated tools to facilitate fledormance of specific steps in the HSI process. Dr Malone also is currently occupied in applying human engineering to the DD 21 and is serving as the Chair ofthe System ManninglHuman Perfomzance Working IPT under the DD 21 ManninglHSI IPT chaired ty PMS 500M. Mr. Clifford Baker:has over 20 years experience in developing and applying human factors technology to complex systems. He holds a masters degree in psychology with a specialization in human factors engineering and he is a Board Certified Human Factors Engineering Profesional

reduced manning is the process (and the result) of removing human functions from a system while retaining or improving system operability and effectiveness. reliability and maintainability characterize a system's operability and effectiveness. reduced manning impacts system reliability by changing the characteristics of (1) human error associated with system operation and maintenance, (2) time to repair failed components, and (3) mean-time-between-failures (MBTF) in a reduced manning environment. Simply reducing manning without compensating for system dependence on human involvement generally has a negative impact on system maintainability. Methods to address this include (1) human-system integration design of maintenance interfaces and (2) design of operations activities that are closely related to device failures. After demonstrating reliable performance through testing and operation, ship commanders can be assured that fewer people can effectively operate and maintain Navy ships and systems.

关键词： Naval vessels

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Prediction of the measured temperature after the last finishing stand using artificial neural networks

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STEEL rESEArCH 1997年第1期68卷 20-26页

作者： Vermeulen, W Bodin, A vanderZwaag, S Materials Science Laboratory Delft University of Technology Section Manager R&D Hoogovens Research and Development Koninklijke Hoogovens N.V.

In this report the development of an artificial neural network, capable of predicting the temperature after the last finishing stand of a hot strip mill for a certain class of steels, is described. Three neural networks with different numbers of hidden nodes (3, 5 and 7) were trained. The relative standard deviation in finish temperature as predicted by the best performing neural network model (7 hidden nodes) was just over 25% smaller than that of the linear Hoogovens model. This improved accuracy can be explained by the incorrect assumption in the Hoogovens model of linear dependence of the finishing temperature on some input parameters. With the trained neural network, the influence of the various input parameters on the finishing temperature could be examined. The dependencies predicted by the neural network can be approximated by a linear fit and are a factor 2 lower for all input parameters. it is conceivable that operation of the mill using an artificial neural network for the prediction of the finishing temperature would have resulted in smaller operational fluctuations.

关键词：精轧机温度测定预测 Hot strip mills Artificial neural networks finishing stand

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reliable 0.28 μm metal contact technology

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Journal of Vacuum Science & technology B: Microelectronics Processing and Phenomena 1997年第5期15卷 1775-1775页

作者： Kim, J.S. Kang, C.J. Park, J.W. Chung, S.H. Kim, B.C. Lee, J.Y. Park, J.W. R&D Center Technology Development Semiconductor Business Samsung Electronics Co. Kiheung-Eup Yongin-Gun Kyungki-Do Korea

A reliable small metal contact (MC) process is developed for the gigabit scaled dynamic random access memories (drAMs). The high aspect ratio contact etch was accomplished by using a high density inductively coupled plasma reactor. The low contact resistance of the MC for the gigabit scaled drAMs is realized when the amount of Si consumption at the bottom of the contact holes is minimized (<20 nm). The dopant activation of the source and drain (S/d) regions is also critical to have low contact and sheet resistances (rc and rs). Use of the high temperature (>950 °C) rapid thermal annealing enhances the dopant activation and effectively reduces the rc and rs. Surface treatment of the bottom of the contact hole after dry etch, becomes a key factor to have low contact resistance in the case of small contacts. The conventional Ar+ in situ sputter cleaning deteriorates the contact resistance of the vertically sloped small MCs. Light etch using CF4 and O2 gases removes damaged layer and improves contact resistance. rapid thermal nitridation after TiN barrier metal deposition also improves electrical properties of the MCs.

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Abstracts of presentations at the 19th Congress of the Israeli Phytopathological Society - February 16-17, 1998, ArO, the Volcani Center, Bet dagan, Israel

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PHYTOPArASITICA 1998年第2期26卷 153-174页

作者： [Anonymous] Dept. of Ornamental Horticulture ARO Newe Ya’ar Research Center Ramat Yishay Israel Extension Service Ministry of Agriculture Tel Aviv Israel Dept. of Plant Pathology ARO The Volcani Center Bet Dagan Israel Kibbutz Bar’am M.P. Merom Israel Dept. of Plant Pathology ARO Gilat Experiment Station M.P. Negev Israel Dept. of Plant Pathology Israel Dept. of Field Crops ARO The Volcani Center Bet Dagan Israel Dept. of Plant Pathology and Microbiology The Hebrew University of Jerusalem Faculty of Agricultural Food and Environmental Quality Sciences Rehovot Inst. for Cereal Crops Improvement (ICCI) The George S. Wise Faculty of Life Sciences Tel-Aviv University Tel Aviv Israel Dept. of Plant Pathology ARO The Volcani Center Bet Dagan Dept. of Plant Pathology and Microbiology The Hebrew University of Jerusalem Food and Environmental Quality Sciences Rehovot Israel Official Seed Testing Laboratory Israel Depts. of Plant Pathology Israel Extension Service Ministry of Agriculture Tel Aviv Virology ARO The Volcani Center Bet Dagan Dept. of Entomology The Hebrew University of Jerusalem Faculty of Agricultural Food and Environmental Sciences Rehovot Israel Dept. of Life Sciences Bar-Ilan University Ramat Gan Israel Recherche en Sciences de la Vie et de la Santé Laval University University City Quebec Canada Dept. of Agronomy and Natural Resources ARO The Volcani Center Bet Dagan Israel Dept. of Plant Science The George S. Wise Faculty of Life Sciences Tel-Aviv University Tel Aviv Israel Dept. of Ornamental Horticulture ARO The Volcani Center Bet Dagan Israel Dept. of Plant Pathology ARO The Volcani Center Bet Dagan Israel Inst. de Agricultura Sostenible CSIC Cordoba Spain Dept. of Plant Science Israel Dept. of Biology Technion-Israel Institute of Technology Haifa Israel Inst. of Cereal Crops Improvement Tel-Aviv University Tel Aviv Arava R&D Sapir Center M.P. Central Dept. of Agricultural Botany Israel Dept. of Vegetable Crops ARO Newe Ya’ar Resea

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Efficient Amplification at 1.3 µm in a Pr3+-doped Ga-Na-S Fiber 8

Efficient Amplification at 1.3 µm in a Pr3+-doped Ga-Na-S F...

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8th Topical Meeting on Optical Amplifiers and Their Applications, OAA 1997

作者： Tawarayama, H. Ishikawa, E. Itoh, K. Aoki, H. Yanagita, H. Okada, K. Yamanaka, K. Matsuoka, Y. Toratani, H. Technology Development Laboratory R&D Center Hoya Corporation 3-3-1 Musashino Akishima-shi Tokyo196 Japan

A Pr3+-doped Ga-Na-S (GNS) chalcogenide glass fiber, of which transmission loss is 1.2 dB/m at 1.31 µm, has been fabricated and a large gain coefficient of 0.81 dB/mW has been achieved. © 1997 OSA/OAA 1997.

ISBN: (纸本)1557525056

关键词： rare earths

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Arsenal ship program certification plan

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NAVAL ENGINEErS JOUrNAL 1998年第1期110卷 249-261页

作者： Arntson, S Lind, W Turner, JJ Blaiklock, WC Tedesco, M Stephen G. Arntson is an independent consultant. A degree Naval Architect he has over 38 years of experience in the design construction and maintenance of surface ships. His experience includes 28 yeus with the Naval Sea Systems Command Naval Ship Engineering Centerl Bureau of Ships specializing in the structural design of Naval surface ships and 7 years with ABS Specializing in the application of commercial ship design practices. Most recently he worked with both NASSCO and ABS MZ the Arsenal Ship Program. Steve was very active with the Ships Structure Committee in developing R&D programs for ship structure and he is a member of the ASNE Journal Committee. Steve received a BS in Mechanical Engineering (Naval Architecture Option) from Virginia Polytechnic Institute in 1964. He is a member of the ASNE TAU BETA PI PI TAU SIGMA and PHI KAPPA PHI. William 1. Lind joined ABS in 1992 after ten years with Sparkman and Stephens Inc. He is currently ABS Amekas Manager of Engineering jm New Orleans and Cleveland. Both ofices conduct plan reviews for militavy commercial and private marine craft fm self-propelled vessels under 300 feet in length and bargus unlimited in length. As Vice-Chaimn ojthe Western Rivers Technical Committee Great Lakes Technical Committee and the Small Vessel Committee Bill participated in the writing of the 1997 ABS Guide for Building and Classing High Speed Craft and the 1997 ABS Rules for Building and Classing Steel Vessels Under 9OM. Bill received an MBA from Florida Atlantic University in 1995 a BS in Mechanical Engineering from New York Institute of Technology in 1986 and a BA in Histoy from Colgate University in 1976. He is Chaimn of SNAME HS-9 Composite Panel Testing & Fire Protection and a member of ASNE. John J. Turner is Senior Vice President of SYNTEK Technologies Inc. in Arlington Virginia. SYNTEK specializes in activities of a highly technical nature supporting both industry and government in domestic and international markets. He is a registered Professional Engineer

The defense Advanced research Project Agency (dArPA), in conjunction with the U.S. Navy, initiated a research program for the design and construction of a distinctive warship for the 21st century known as the Arsenal Ship. By using an innovative development and acquisition approach it was hoped to streamline the procurement process and reduce costs. In an environment where budgets are being cut, both industry and Government were challenged to develop, design, and produce the innovative ship and related mission systems to meet specific performance capabilities within strict affordability constraints. A key element of this innovative acquisition approach was a new certification scheme designed to replace the traditional test and evaluation (T&E) and acceptance process. The purpose of this paper is to describe the development of the certification plan during Phase LI of the Arsenal Ship program by the American Bureau of Shipping and the contending Shipyard teams, and to discuss the potential benefits of this alternative certification approach. Although the Arsenal Ship program was canceled late in 1997, insight derived from the exploration of new certification concepts could benefit future design and building programs.

关键词： Warships

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Evaluation of alignment accuracy in processed wafers and SiC masks on a scattered-light alignment system for x-ray aligners

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Journal of Vacuum Science & technology B: Microelectronics Processing and Phenomena 1997年第6期15卷 2471-2471页

作者： Miyatake, Tsutomu Hirose, Masaoki Shoki, Tsutomu Ohkubo, ryo Yamazaki, Kuniaki Laboratory for Quantum Equipment Technology Sumitomo Heavy Industries Ltd. 2-1-1 Yato-cho Tanashi-shi Tokyo 188 Japan R&D Center HOYA Corporation 3-1-1 Musashino Akishima-shi Tokyo 196 Japan Research & Development Operations Semiconductor Products Division Nippon Motorola Ltd. 2-9-1 Akedori Izumi-ku Sendai-shi Miyagi 981-32 Japan

The alignment performances of the video-based scattered-light alignment (SLA) system for 0.1 μm lithography are described in this article. The SLA system has high sensitivity to the silicon carbide (SiC) mask without an antireflection coating (ArC). This article especially focuses on the alignment accuracy in processed wafers and the dependency of the alignment accuracy on the SiC membrane thickness. A series of alignment tests was done on a lab-based vertical wafer stage using the SiC masks. In order to evaluate the alignment accuracy in processed wafers, we prepared four processed wafer types: nitride, oxide, poly-Si, and aluminum. The high position sensing repeatability in the range of 4.8–6.4 nm (3σ) was obtained using the combination of the four processed wafers and a 2-μm-thick SiC membrane without the ArC. We also obtained the alignment accuracy using the wafer alignment marks only, resulting in an alignment accuracy of 10.0, 8.8, 9.1, and 35.7 nm (3σ) for the nitride, oxide, poly-si, and aluminum wafers, respectively. In addition, the dependency of the alignment accuracy on the SiC membrane thickness was obtained using the membranes with thicknesses of 2, 3, 4, and 5 μm. An improvement of the alignment accuracy in the aluminum is discussed.

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