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Annual International Symposium on reliability Physics

作者： S. Gerardin M. Bagatin A. Paccagnella G. Cellere A. Visconti S. Beltrami C. Andreani G. Gorini C.d. Frost Department of Information Engineering University of Padova Padova Italy Applied Materials Baccini Treviso Italy Numonyx R&D-Technology Development Agrate-Brianza Italy Department of Physics University of Rome Rome Italy Department of Physics University of Milano Milan Italy ISIS Rutherford and Appleton Laboratory Didcot UK

ISBN: (纸本)9781424454303;9781424454310

We investigate atmospheric neutron effects on floating gate cells in MLC NANd Flash memories. Loss of information is shown to occur especially at the highest program levels, but to an extent that does not challenge current error correction capabilities. We discuss the physical mechanisms and analyze scaling trends, which show a rapid increase in sensitivity for decreasing feature size. A large spread in the cross section is visible from vendor to vendor for comparable feature size.

关键词： Neutrons Error correction codes Nonvolatile memory Physics CMOS technology Ionizing radiation Bit error rate research and development Laboratories Intersymbol interference

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Chelate Effect on the synthesis of carbon supported Pt nanoparticles for PEMFC anodes

Chelate Effect on the synthesis of carbon supported Pt nanop...

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Energy and Sustainable development

作者： Shyh-Jiun Liu Chia-Hung Huang Weng-Sing Hwang der-Yuan Lee Department of Greenery Technology National University of Tainan Taiwan Department of Materials Science and Engineering National Cheng Kung University Tainan Taiwan Surface Engineering and Heat Treatment Section Micro/Meso Mechanical Manufacturing R&D Department Metal Industries Research and Development Centre Kaohsiung Taiwan Department of Environmental Resource Management Chia Nan University of Pharmacy and Science Tainan Taiwan

ISBN: (纸本)9781424485635

Colloidal suspensions of spherical crystalline Pt nanoparticles with a narrow size distribution were synthesized using a microwave synthesis process. Analogous Pt-complexes (Pt(dien) 2+ , Pt(trien) 2+ , and Pt(en) 2 2+ . where dien = diethylenetriamine, trien = triethylenetetraamine, en = ethylenediamine) were deposited onto Vulcan XC-72 carbon powder to obtain Pt/C-x catalysts (x = 3, 4, and 22 represents the coordination number of the chelating agent). The Pt/C-x catalysts were evaluated under PEMFC conditions. X-ray diffraction and transmission electron microscopy were used to characterize the Pt/C-x catalysts. It was found that the Pt nanoparticles were uniform in size and highly dispersed on the carbon black supports. The chelating agents were expected to improve the growth of Pt particle size as well as the dispersion of Pt nanoparticles. In the PEMFC experiments, the mass-specific current density and mass-specific power density of the catalysts were as high as that of the commercial 20wt % Pt/C-ETEK catalyst.

关键词： X-ray imaging Anodes Charge coupled devices

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Virtual Story in Cyberspace: Valley of Geysers, Kamchatka

Virtual Story in Cyberspace: Valley of Geysers, Kamchatka

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International Conference on Cyberworlds

作者： Andrey Leonov Alexander Serebrov Mikhail Anikushkin dmitriy Belosokhov Alexander Bobkov Evgeny Eremchenko Pavel Frolov Ilya Kazanskiy Andrey Klimenko Stanislav V. Klimenko Viktoria Leonova Andrey rashidov Vasil Urazmetov Alexander Aleynikov Valeriy droznin Viktor dvigalo Vladimir Leonov Sergey Samoylenko Tikhon Shpilenok Protvino Institute of Computing for Physics and Technology Moscow region Russia Research and Development Center ScanEx Moscow Russia R&D Center ScanEx Moscow Singapore Petropavlovsk-Kamchatskiy Institute of Volcanology and Seismology FEB RAS Russia Petropavlovsk-Kamchatskiy Institute of Volcanology and Seismology FEB RAS Petropavlovsk-kamchatsky Russia Kronotskiy Natural State Biosphere Reserve Elizovo Kamchatskiy region Russia

Virtual 3d model of the Valley of Geysers, Kamchatka provides virtual travelling and interactive storytelling in the cyberspace and serves for scientific visualization, geodynamical processes modeling, disaster prepar... 详细信息

关键词： Solid modeling Three dimensional displays Biological system modeling data models Terrain factors Internet Cyberspace

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Highly reliable Vertical NANd technology with Biconcave Shaped Storage Layer and Leakage Controllable Offset Structure

Highly Reliable Vertical NAND Technology with Biconcave Shap...

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Symposium on VLSI technology

作者： Won-seok Cho Sun Il Shim Jaehoon Jang Hoo-sung Cho Byoung-Koan You Byoung-Keun Son Ki-hyun Kim Jae-Joo Shim Choul-min Park Jin-soo Lim Kyoung-Hoon Kim Ju-Young Lim Hui-Chang Moon Sung-min Hwang Hyun-seok Lim Han-Soo Kim Jungdal Choi Chilhee Chung Flash Core Technology Lab Semiconductor R&D Center Samsung Electronics Co. Ltd.San #24 Nongseo-Dong Giheung-Gu Yongin-City Gyeonggi-Do 449-711 Korea Process Development Team Semiconductor R&D Center Samsung Electronics Co. Ltd.San #24 Nongseo-Dong Giheung-Gu Yongin-City Gyeonggi-Do 449-711 Korea

ISBN: (纸本)9781424454518

The performance and reliability of 3-d NANd cells fabricated by TCAT (Terabit Cell Array Transistor) technology have been improved significantly via a damascened metal gates and a controlled offset between BL contact and select transistor. The damascened metal gate providing sufficiently low resistance is achieved by adopting a novel metal process. Highly suppressed disturbance property-is achieved by the appropriate offset which reduces the leakage current through the select transistor. It is proved that the TCAT NANd is a manufacturable technology in terms of reliability as well as performance in a channel hole with a diameter of 90nm.

关键词： Flash memory Vertical 3d TCAT and CTF

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reliability characterization of Phase Change Memory

Reliability characterization of Phase Change Memory

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Non-Volatile Memory technology Symposium

作者： Bob Gleixner Fabio Pellizzer roberto Bez Numonyx R&D - Technology Development 2550 North First Street Suite 250 San Jose CA 95131 USA R&D-Technology Development Numonyx Agrate-Brianza Italy

ISBN: (纸本)9781424449538;9781424449545

Phase Change Memory (PCM) has emerged as an attractive candidate for next-generation non-volatile memory devices. For these applications, reliability is determined by the ability to retain the state of data in the device and support a specified number of re-writes without failure. In PCM technologies, retention is limited by the meta-stable amorphous state of the cell. For cycling endurance (re-writes), failure occurs due to either void formation in the active material or contamination of the heating element of the cell. With optimized process integration and cell programming, large array devices based on a 90 nm PCM technology are able to support data retention to 10 years at 85°C and greater than 10 6 write cycles.

关键词： Phase change memory Phase change materials Nonvolatile memory Crystallization Amorphous materials research and development robustness Acceleration Failure analysis Contamination

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Microphase separated structures of block copolymer thin film with non-volatile selective solvent

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IOP Conference Series: Materials Science and Engineering 2010年第1期14卷

作者： Katsuhiro Yamamoto Naoya Umegaki Taito Matsutani Hideaki Takagi Eri Ito Shinichi Sakurai Department of Materials Science & Technology Graduate School of Engineering Nagoya Institute of Technology Gokiso-cho Showa-ku Nagoya 466-8555 Japan Material Development Section Central R&D Menicon Co. Ltd. 1-10 Kouzouji 5-chome Kasugai 487-0032 Japan Kyoto Institute of Technology Matsugasaki Sakyo-ku Kyoto 606-8585 Japan

Microphase separated structures of block copolymer, polystyrene-b-polyisoprene (PS-b-PI, PS = 14%) including non-volatile selective solvent thin films were investigated using grazing incidence small angle X-ray scattering technique. The diethyl phthalate (dEP) was used as a non-volatile selective solvent which solves PS only. The dEP swelled PS phase selectively and the microphase separated structure transited from the PS spherical domain to the lamellar domain with an increase in dEP content in the bulk state. Similarly, the phase separated structure in the thin film prepared by spin cast on a silicon wafer from the mixture of toluene/dEP and block copolymer changed according to the initial dPE concentration. However, the morphologies developed in the thin film were shifted to the structures at lower dEP concentration than that expected from the initial concentration. Moreover, the cylindrical and lamellar domains were aligned parallel and perpendicularly to the substrate, respectively.

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Integrated a-si circuit for capacitively coupled drive method in tft-lcds

Integrated a-si circuit for capacitively coupled drive metho...

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2009 Vehicles and Photons Symposium

作者： Ma, Jun Luo, Xixi Jung, Tae Bo Wu, Yong Ling, Zhihua Huang, Zhongshou Zeng, Wei Li, Yuesheng Advanced Technology Development R&D Center Shanghai Tianma Micro-Electronics Co. Ltd 889 Huiqing Rd. Pudong New Area Shanghai China Department of Materials Science Fudan University 220 Handan Road Shanghai China

A novel amorphous silicon driving circuitry, operated in Capacitively Coupled driving (CCd) method, is proposed and analyzed. By employing the circuitry for TFT-LCd gate and storage capacitor lines, line inversion driving mode can be realized with dC voltage on common electrode. With dC voltage on color filter common electrode, a capacitive touch panel is no longer suffered from driving pulse cross-talk in a conventional line inversion TFT-LCd. � 2009 SId.

关键词： Electrodes

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A unified model for permanent and recoverable NBTI based on hole trapping and structure relaxation

A unified model for permanent and recoverable NBTI based on ...

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Annual International Symposium on reliability Physics

作者： daniele Ielmini Mariaflavia Manigrasso Francesco Gattel Grazia Valentini Dipartimento di Elettronica e Informazione Politecnico di Milano Milan Italy R&D Technology Development Numonyx Milan Italy

Negative bias temperature instability (NBTI) strongly limits reliability of PMOS devices by degradation of threshold voltage, subthreshold slope and transconductance. The physical understanding of the NBTI mechanism is essential for searching paths of NBTI alleviation and providing realistic predictions for CMOS reliability. This work presents a new NBTI model based on hole trapping/detrapping accompanied by structural relaxation in the host dielectric. Simulations account for a time and T dependence of the drain current degradation during NBTI stress. dynamic NBTI effects are then explained by alternative hole capture and emission during stress and relaxation stages. The impact of the activation energy dispersion on relaxation times is finally discussed.

关键词： Niobium compounds Titanium compounds degradation Stress Negative bias temperature instability MOS devices Threshold voltage Transconductance Semiconductor device modeling dielectrics

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Investigation on hot carrier reliability of Gate-All-Around Twin Si Nanowire Field Effect Transistor

Investigation on hot carrier reliability of Gate-All-Around ...

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Annual International Symposium on reliability Physics

作者： Yun Young Yeoh Sung dae Suk Ming Li Kyoung Hwan Yeo dong-Won Kim Gyoyoung Jin Kyoungsuk Oh Advanced Technology Development Team 1 R&D Center Samsung Electronics Company Limited Yongin si Gyeonggi South Korea

Hot carrier (HC) reliability of gate-all-around twin Si nanowire field effect transistor (GAA TSNWFET) is reported and discussed with respect to size and shape of nanowire channel, gate length, thickness and kind of gate dielectric in detail. Smaller nanowire channel size, shorter gate length and thinner gate oxide down to 2 nm thickness show worse hot carrier reliability. The worst V d for 10 years guaranty, 1.31 V, satisfies requirement of ITrS roadmap.

关键词： Hot carriers FETs degradation Shape dielectrics Stress Silicon germanium Germanium silicon alloys Etching Tin

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Mechanical properties of rubber composites with stacked-cup carbon nanotubes

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Carbon 2010年第2期48卷 571-571页

作者： Mikiko Hashimoto Tetsuya Isshiki Masanori Tomita Takashi Yanagisawa Kazuo Kaneda Hidetaka Takahashi Fujio Okino Faculty of Textile Science and Technology Shinshu University 3-15-1 Tokida Ueda 386-8567 Japan GSI Creos Corporation Nano Bio Development Center (NBDC) 1-12 Minami-Watarida Kawasaki-ku Kawasaki 210-0855 Japan Fujikura Rubber Ltd. R&D Division 1-840 Mihashi Omiya-ku Saitama 330-0856 Japan

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