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IEEE International Nanoelectronics Conference (INEC)

作者： Xiaodong Wang Guike Li Jiran Liang An Ji Ming Hu Fuhua Yang Jian Liu Nanjian Wu Hongda Chen Engineering Research Center for Semiconductor Integrated Technology Institute of Semiconductors Chinese Academy and Sciences Beijing China Engineering Research Center for Semiconductor Integrated Technology Chinese Academy of Sciences Beijing P. R. China Chinese Academv of Sciences Institute of Semiconductors Beijing P. R. China Department of electronic science and -technology Tianiin University Tianiin P. R. China Optoelectronic Research and Development Center Institute of Semiconductors Chinese Academy and Sciences Beijing China Optoelectronic R&D Center Chinese Academy of Sciences Beijing P. R. China

VO x thin films have been fabricated by low temperature ion beam sputtering and post reductive annealing process. Semiconductor-metal phase transition is observed for the film annealed at 400degC for 2 hours. The film also shows a polycrystal structure with grain size from 50 nm to 150 nm. The VO x thin films fabricated by this process have a TCr up to -2.7% at room temperature. Our results indicate a promising fabrication method of the nano-structured VO x film with relatively high TCr and semiconductor-metal phase transition.

关键词： Nanoelectronics Conferences

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Strategy and Technical Support System for developing New TCM drugs

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World Science and technology 2008年第3期10卷 1-7页

作者： Qiong-lin LIANG Guo-an LUO Jian-qiang ZOU Xiu-mei GAO Jian-xun LIU Zu-guang YE Wei JIA Modern Research Center for TCM Tsinghua University Beijing 100084 China Division of Biotechnology and Medicine Department of Social Development Ministry of Science and Technology of China Beijing 100862 China Tianjin University of Traditional Chinese Medicine Tianjin 300193 China Xiyuan Hospital China Academy of Chinese Medical Sciences Beijing 100091 China State Research Center for R&D of TCM Multi-ingredient Drugs Beijing 100075 China School of Pharmacy Shanghai Jiao Tong University Shanghai 200030 China

Abstract Along with frequently changed human disease spectrums, multicomponent drugs have attracted increasing attention of the mainstream international medical community. Traditional Chinese Medicine (TCM) has been deemed one of the best choices for treating complex chronic diseases. In this context, people believe that TCM formula and Chinese patented medicine with proven effects are valuable assets for bringing out new drugs and that modernized composite medicine (MCM) can be developed enjoying TCM-specific merits, with rational compatibility, identical pharmaceutical ingredients, clearly defined mechanism, safety assurance, efficacy, and quality control. Such a MCM will become popular in the mainstream international medical market, allowing inventors being at an advantageous position in the international competition for innovative drugs. This paper proposes a technical roadmap for developing composite medicines, with a range of useful suggestions and solutions. It also presents a perspective for developing new composite medicines.

关键词： New drug discovery/development Traditional Chinese Medicine Composite medicine/Multicomponent drug roadmap Key technology

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3dAV integrated system featuring arbitrary listening-point and viewpoint generation

3DAV integrated system featuring arbitrary listening-point a...

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IEEE Workshop on Multimedia Signal Processing

作者： Mehrdad Panahpour Tehrani Kenta Niwa Norishige Fukushima Yasushi Hirano Toshiaki Fujii Masayuki Tanimoto Kazuya Takeda Kenji Mase Akio Ishikawa Shigeyuki Sakazawa Atsushi Koike Visual Communications Laboratory KDDI R&D Laboratories Inc. Fujimino Saitama Japan Department of Information Science Nagoya University Nagoya Aichi Japan Department of Electrical Engineering and Computer Science Nagoya University Nagoya Aichi Japan Information Technology Centre Nagoya University Nagoya Aichi Japan Visual Communications Laboratory KDD Research and Development Laboratories Inc. Fujimino Saitama Japan

ISBN: (纸本)9781424422944

In this paper, we propose two novel methods for arbitrary listening-point generation for 3d audio-video (3dAV) integration in a large-scale multipoint cameras and microphones system with abilities to process, and display information of any recorded 3d scene in realtime. With this system, users are able to control their own viewpoint/listening-point position, freely. Arbitrary listening-point can be generated by either (i) ray-space representation of sound wave field (i.e. source sound independent) for multi frequency layers, or (ii) acoustic transfer function estimation (i.e. source sound dependent) and blind separation of sources of sounds. Arbitrary viewpoint generation is based on ray-space method, which is enhanced by using multipass dynamic programming for geometry compensation. Integration is done by either (i) ray-space representation of sound wave and image together, or (ii) integrating each camera video signal and acoustic transfer function of the same location as integrated 3dAV data. The prototype system of integrated audio-visual viewer achieves both good image and sound qualities with 15 frames/second.

关键词： Microphones Cameras Three dimensional displays Estimation Transfer functions Synchronization Interpolation

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Investigation of Mobility in Twin Silicon Nanowire MOSFETs （TSNWFETs）

Investigation of Mobility in Twin Silicon Nanowire MOSFETs ...

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2008 9th International Conference on Solid-State and Integrated-Circuit technology

作者： Junsoo Kim Seungwon Yang Jaehong Lee Sung dae Suk Kangil Seo donggun Park Byung-Gook Park Jong duk Lee Hyungcheol Shin Nano Systems Institute (NSI) Inter-University Semiconductor Research Center (ISRC)and School of Electrical EngineeringSeoul National UniversitySan 56-1Shinlim-dongKwanak-kuSeoulKorea Advanced Technology Development Team1 R&D CenterSamsung Electronics Co.San 24Kiheung-GuYongin-City Kyunggi-DoKorea449-711

The transport characteristics of cylindrical gate-all-around twin silicon nanowire field-effect transistors with radius of 5 nm have been investigated. Mobility was estimated by extracting of source/drain resistance.

关键词： Investigation of Mobility in Twin Silicon Nanowire MOSFETs TSNWFETs

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Neutron-induced soft errors in advanced flash memories

Neutron-induced soft errors in advanced flash memories

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International Electron devices Meeting (IEdM)

作者： G. Cellere S. Gerardin M. Bagatin A. Paccagnella A. Visconti M. Bonanomi S. Beltrami P. roche G. Gasiot r. Harboe Sorensen A. Virtanen C. Frost P. Fuochi C. Andreani G. Gorini A. Pietropaolo S. Platt DEI University of Padova Padova Italy Numonyx R&D - Technology Development Agrate-Brianza Italy STMicroelectronics Crolles France ESA ESTEC Noordwijk Netherlands Accelerator Laboratory University of Jyväskylä Finland Rutherford Appleton Laboratory ISIS Facility Didcot UK CNR-ISOF Bologna Italy Università di Roma Tor Vergata Italy Università di Milano-Bicocca Italy University of Central Lancashire UK

Atmospheric neutrons are a known source of Soft Errors (SE), in static and dynamic CMOS memories. This paper shows for the first time that atmospheric neutrons are able to induce SE in Flash memories as well. detailed experimental results provide an explanation linking the Floating Gate (FG) cell SE rate to the physics of the neutron-matter interaction. The neutron sensitivity is expected to increase with the number of bits per cell and the reduction of the feature size, but the SE issue is within the limit of current ECC capabilities and will remain so in the foreseeable future.

关键词： Flash memory Neutrons Intersymbol interference Error correction codes Laboratories IEC standards Logic arrays Logic testing research and development Joining processes

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Two-bit Cell Operation in diode-Switch Phase Change Memory Cells with 90nm technology

Two-bit Cell Operation in Diode-Switch Phase Change Memory C...

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Symposium on VLSI technology

作者： d. H. Kang J. H. Lee J. H. Kong d. Ha J. Yu C. Y. Um J. H. Park F. Yeung J. H. Kim W. I. Park Y. J. Jeon M. K. Lee Y. J. Song J. H. Oh G. T. Jeong H. S. Jeong Advanced Technology Development Team 2 Memory R&D Div. Samsung Electronics Co. Ltd. San #24 Nongseo-Dong Giheung-Gu Yongin-City Gyunggi-Do 449-711 South Korea

ISBN: (纸本)9781424418022

This paper firstly reports key factors which are to be necessarily considered for the successful two-bit (four-level) cell operation in a phase-change random access memory (PrAM). They are 1) the write-and-verify (WAV) writing of four-level resistance states and 2) the moderate-quenched (MQ) writing of intermediate resistance levels, 3) the optimization of temporal resistance increase (so-called resistance drift) and 4) of resistance increase after thermal annealing. With taking into account of them, we realized a two-bit cell operation in diode-switch phase change memory cells with 90nm technology. All of four resistance levels are highly write endurable and immune to write disturbance above 10{sub}8 cycles, respectively. In addition, they are non-destructively readable above 10{sub}7 read pulses at 100ns and 1uA.

关键词： battery operation Phase change memory key factors Phase change random access memory Immunity Phase thermal insulation annealing

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Erratum: 'A Novel Body-Tied Fin Field Effect Transistor Flash Memory Structure with λ-Shaped Floating Gate for Sub 45 nm NOr Flash Memory'

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Japanese Journal of Applied Physics 2008年第12R期47卷

作者： Yimao Cai Yun Heub Song Wook Hyun Kwon Younggoan Jang Wonhyeng ryu Joongshik Shin Chan-Kwang Park Advanced Technology Development Team2 Semiconductor R&D Center Samsung Electronics Co. Ltd. San #24 Nongseo-dong Giheung-gu Yongin Gyeonggi-do 446-711 Korea

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Study on Inter-Base Station Link Capacity Sharing using Cognitive radio Communication

Study on Inter-Base Station Link Capacity Sharing using Cogn...

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IEEE International Symposium on Personal, Indoor and Mobile radio Communications (PIMrC)

作者： Kanshiro Kashiki Mitsuo Nohara Satoshi Imata Hiroyuki Nakamura KDDI R&D Laboratories Technology Development Center Chiyoda Tokyo Japan Media Technology Department KDDI Chiyoda Tokyo Japan

This paper describes a study on beam switching scheme applicable to the cognitive radio communication, from the viewpoint of the efficient use of radio frequency resource, as a function of the response time of Web browsing. The beam switching is time division scheme of the assigned frequency bandwidth among one wireless link and another links. regarding the radio network, we consider three types of topology. As a result of software simulations, we conclude that the radio beam switching have the better performance in frequency use, comparing with the case of the conventional fixed frequency allocation. Furthermore, we simulate the IP throughput characteristics and response time characteristics of Web browsing in the radio link affected by transmission error.

关键词： Cognitive radio Communication switching delay radio spectrum management radio frequency Frequency conversion Bandwidth radio network Network topology Software performance

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Smallest Bit-Line Contact of 76nm pitch on NANd Flash Cell by using reversal Pr (Photo resist) and SAdP (Self-Align double Patterning) Process

Smallest Bit-Line Contact of 76nm pitch on NAND Flash Cell b...

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IEEE/SEMI Conference and Workshop on Advanced Semiconductor Manufacturing

作者： Byungjoon Hwang Jaehwang Shim Jang-Ho Park Kwangseok Lee Sunghyun Kwon Sang-Yong Park Yoonmoon Park dong-Hwa Kwak Jaekwan Park Won-Seong Lee Advanced Technology Development Team Semiconductor R&D Center Memory Business Samsung Electro Mechanics Company Limited Yongin si Kyunggi South Korea

For the scaling down of design rule to develop the high density NANd flash device, the reduced active area forces to form a small bit-line contact with the low contact-resistance, as well as the low junction leakage current due to the borderless contact. In this paper, we propose a novel process to make 38 nm small size contact with 76 nm pitch by using the reversal Pr (photo resist) and SAdP (self-align double patterning) process. The methods to minimize the contact resistance and to suppress the junction leakage current were explained on NANd flash device with 38 nm node technology.

关键词： resists Etching Leakage current Contact resistance Lithography Production research and development Electronic mail Fabrication Atomic layer deposition

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Synthesizing realistic Vehicular Mobility for More Precise Simulation of Inter-vehicle Communication

Synthesizing Realistic Vehicular Mobility for More Precise S...

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IEEE Globecom Workshops

作者： Kazuhiro Nakanishi Takaaki Umedu Teruo Higashino Hironobu Kitaoka Hiroko Mori Graduate School of Information Science and Technology Osaka University Graduate School of Information Science and Technology Osaka University Japan Toyota Central Research and Development Laboratories Inc. Japan Toyota Central R&D Labs

recently many researches about transmission of traffic information among vehicles by using inter-vehicle communication without any load side infrastructures have been studied. In order to evaluate performance of such inter-vehicle communication, traffic simulators are widely used. However, in most of existing traffic simulators, distance between two following vehicles is modeled as equals based on statistical flow rates. Such mobility models do not reflect real performance of inter-vehicle communication, In this paper, we extract particular characteristics of real vehicular mobility from several traces of vehicular movement, formulate them formally, implement the formulated realistic vehicular mobility on an existing traffic simulator and obtain more real performance of inter-vehicle communication. In the extracted vehicular mobility, each vehicle runs at a different speed, with different distance from the vehicle ahead, and with different vehicular density/distribution while the bottleneck capacity and saturation flow rate of the target roads are preserved as the same as those on the original one. We have shown that performance of inter-vehicle communication is rather different between the proposed mobility and original mobility by evaluating the reachable hop counts of multi-hop communication and performance of the dSr protocol.

关键词： Traffic control road vehicles Telecommunication traffic Spread spectrum communication Mobile communication Protocols Ad hoc networks research and development Predictive models Microscopy

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