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The pupil as a possible premonitor of drowsiness

The pupil as a possible premonitor of drowsiness

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Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC)

作者： Junpei Nishiyama Koji Tanida Masashi Kusumi Yutaka Hirata Department of Computer Science Chubu University College of Engineering Kasugai Japan researchers Honda R&D Co. Ltd. Automobile R&D Center Department 4 Technology Research Division 2. e-mail: Koji_Tanida@n.t.rd.honda.co.jp Automobile Research and Development Center Department Technology Research Division Japan

Prediction of drowsiness based on an objective measure is demanded in machine and vehicle operations in which human errors may cause fatal accidents. Currently we focused on the pupil of the eye which is controlled by the autonomic nervous system, and easily observable non-invasively from the outside of the body. We employed uneventful driving simulation to induce drowsiness of human subjects, and an anti-saccade task to evaluate their cognitive and motor performance. First we confirmed that pupil diameter fluctuates with large amplitude at low frequencies when the subject is aware of his/her drowsiness as reported previously. during this period, the latency of anti-saccade initiation was elongated and varied. We then found that prior to this fluctuation, pupil diameter decreases gradually in most subjects, and they were not aware of sleepiness during this period. We conclude that this monotonic gradual miosis can be a reliable premonitor of drowsiness.

关键词： Humans Vehicles Autonomic nervous system Frequency Fluctuations Signal design Computer science Automotive engineering research and development Accidents

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Sintering Condition of Cordierite for Microwave/Millimeterwave dielectrics

Sintering Condition of Cordierite for Microwave/Millimeterwa...

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IEEE International Symposium on Applications of Ferroelectrics (ISAF)

作者： Hitoshi Ohsato Mio Terada Isao Kagomiya Keizou Kawamura Ken-ichi Kakimoto Materials Science and Engineering Shikumi-College Nagoya Institute of Technology Nagoya Japan Materials Science and Engineering Nagoya Institute of Technology Shikumi College Nagoya Japan Materials Research & Development Division General R&D Laboratories Taiyo Yuden Company Limited Gunma Japan

With advent of ubiquitous age, the high quality dielectric materials have been required for the wireless communications available to the millimeterwave as well as microwave frequencies. These high frequencies would be expected for ultra high speed LAN, ETS and car anti-collision system on the intelligent transport system (ITS) and so on. Silicates are good candidate for microwave/millimeterwave dielectrics, because of their low dielectric constant. Cordierite (Mg 2 Al 4 Si 5 O 18 ) is one of the silicates with low dielectric constant (epsiv r ), which are expected for good candidate of millimeterwave dielectrics. This study has been focused on the sintering condition of cordierite: the lowest calcined temperature of 1355degC among 1355 to 1375degC brings a single phase, the highest sintering temperature of 1440degC among 1375 to 1440degC brings a single phase. At 1440degC, the highest density of 2.48 g/cm 3 was obtained. dielectric constant was depended on the sintering temperatures, and the density was also was improved by the cooling rate from sintering temperature. The microwave dielectric properties are as follows: epsiv r = 6.14, Qldrf= 59682 GHz and tau r = -26.1 ppm/degC.

关键词： dielectric constant Frequency Temperature dependence Powders Materials science and technology dielectric materials Wireless communication Cooling dielectric losses delay effects

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Key Integration Technologies for Nanoscale FrAMs

Key Integration Technologies for Nanoscale FRAMs

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IEEE International Symposium on Applications of Ferroelectrics (ISAF)

作者： d.J. Jung Y.K. Hong H.H. Kim J.H. Park H.S. Kim S.K. Kang J.H. Kim W.S. Ahn d.Y. Choi J.Y. Jung W.W. Jung E.S. Lee H.K. Goh S.Y. Kim J.Y. Kang Y.M. Kang S.H. Joo S.Y. Lee H.S. Jeong Kinam Kim Advanced Technology Team 2 Semiconductor R&D center Samsung Electronics Co. LTD Yongin-City Gyunggi-Do KOREA Advanced Technology Team 2 Semiconductor Research and Development Center Samsung Electronics Company Limited Yongin si Gyeonggi South Korea

We discuss key technologies of 180 nm-node ferroelectric memories, whose process integration is becoming extremely complex when device dimension shrinks into a nano-scale. This is because process technology in ferroelectric integration does not extend to conventional shrink technology due to many difficulties of coping with MIM (metal-insulator-metal) capacitors. The key integration technologies in ferroelectric random access memory (FrAM) comprise (1) etching technology to have less plasma damage; (2) stack technology for the preparation of robust ferroelectrics; (3) capping technology to encapsulate cell capacitors; and (4) vertical conjunction technology to connect cell capacitors to the plate-line. What has been achieved from these novel approaches is not only to have a peak-to-peak value of 675 mV in bit-line potential but to ensure sensing margin of 300 mV in opposite-state retention even after 1000 hours at 150degC.

关键词： random access memory Ferroelectric films Nonvolatile memory Ferroelectric materials MIM capacitors Nanoscale devices Metal-insulator structures Etching Plasma applications Plasma devices

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2-stack 1d-1r Cross-point Structure with Oxide diodes as Switch Elements for High density resistance rAM Applications

2-stack 1D-1R Cross-point Structure with Oxide Diodes as Swi...

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2007 IEEE International Electron devices Meeting (IEdM 2007), vol.2

作者： Myoung-Jae Lee Youngsoo Park Bo-Soo Kang Seung-Eon Ahn Changbum Lee Kihwan Kim Wenxu. Xianyu G. Stefanovich Jung-Hyun Lee Seok-Jae Chung Yeon-Hee Kim Chang-Soo Lee Jong-Bong Park In-Gyu Baek In-Kyeong Yoo Samsung Advanced Institute of Technology Semiconductor Device Laboratory Gyeonggi-Do Korea Nano Fabrication Technology Center Samsung Advanced Institute of Technology Gyeonggi-Do Korea Analytical Engineering Center Samsuna Advanced Institute of Technology Gyeonggi-Do Korea Advanced Process Development Team Semiconductor R&D Center Gyeonggi-Do Korea

We have successfully integrated a 2-stack 8×8 array 1d-1r (one diode-one resistor) structure with 0.5μm×0.5μm cells in order to demonstrate the feasibility of high density stacked rrAM. p-CuO{sub}X/n-InZnO{sub}X heterojunction thin film was used for the first time as a oxide diode which shows increased current density of two orders over our previous p-NiO{sub}x/n-TiO{sub}x oxide diode. And Ti-doped NiO was used for the storage node. No limitation to the number of stacks has been observed from our results. Cell and device properties of our cross-point structure 8×8 array are reported. In addition, all fabrication processes were done at room temperature without other dedicated facilities or processes allowing for compatibility with current CMOS technology. Bi-stable switching for 1d-1r memory was demonstrated for our 2-stack cross-point structures showing excellent behavior for both diode and storage nodes. The forward current density for p-CuO{sub}X/n-IZO{sub}X diodes was over 10{sup}4 A/cm{sup}2, and the operation voltage for the storage node with diode attached was around 3V.

关键词： Switches diodes Current density CMOS technology read-write memory resistors Heterojunctions Transistors Fabrication Temperature

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A Novel Encapsulation technology for Mass-Productive 150 nm, 64-Mb, 1T1C FrAM

A Novel Encapsulation Technology for Mass-Productive 150 nm,...

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IEEE International Symposium on Applications of Ferroelectrics (ISAF)

作者： H. K. Ko d. J. Jung Y. K. Hong J. H. Park Y. M. Kang H. H. Kim S. K. Kang H. S. Kim J. Y. Jung d. Y. Choi S. Y. Kim W. S. Ahn J.-H. Kim W. W. Jung E. S. Lee J. Y. Kang S. Y. Lee H. S. Jeong Kinam Kim Memory Division Samsung Electronics Co. Ltd. Yongin-Si Kyungki-Do Korea Advanced Technology Development Team Semiconductor R&D Center Memory Division Samsung Electronics Co. Ltd. Kyungki-Do Korea

In order to realize a cost-effective high density FrAM product over 64-Mb, it is inevitable to develop technologies for a small cell and large wafer size without degradation during full integration. We have successfully demonstrated a fully functional 0.16 μm 2 capacitor size, 64-Mb, 1T1C FrAM on an 8-inch wafer by introducing new integration technologies at 150 nm technology node. One of the key technologies is the use of novel capping layer, i.e. Al 2 O 3 , which prevents the capacitor from the degradation caused by following integration process. It was found that novel capping Al 2 O 3 layer was very effective to block chronic hydrogen diffusion, and depending on the wafer size, the effective capping layer condition is changed. By introducing a novel capping layer of Al 2 O 3 and optimizing its process conditions, the fully integrated ferroelectric capacitor for the 150nm, 64-Mb, 1T1C FrAM on the 8-inch Si-substrate shows good ferroelectric properties such as a polarization value of 33 μC/cm 2 with an uniform distribution of σ = 1.27, and the sensing window of 300mV at 85°C.

关键词： Encapsulation random access memory Ferroelectric films Nonvolatile memory Capacitors Hydrogen degradation Ferroelectric materials Polarization dielectrics

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Analysis of a submarine's evasive capability against an antisubmarine warfare torpedo using dEVS modeling and simulation 07

Analysis of a submarine's evasive capability against an anti...

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Proceedings of the 2007 spring simulation multiconference - Volume 2

作者： doo-Yeoun Cho Myeong-Jo Son Jung-Ho Kang Sung-Jun Lee Ju-Hwan Cha Seong-Jin Yoo Hyo-Kwang Lee Kyu-Yeul Lee Tae-Wan Kim Yong-Seog Ko Seoul National University Korea Seoul National University Seoul Korea Republic of Korea Army Captain Information Technology R&D Team DAEWOO Shipbuilding & Marine Engineering Inc Geoje-si Gyeonsangnam-do Korea Korea Advanced Institute of Science and Technology Daejeon Korea Agency for Defense Development Jinhae Korea

ISBN: (纸本)9781565553132

The evasive capability of a costal conventional submarine against a light antisubmarine warfare (ASW) torpedo has been studied. The simulation systems are first analyzed and designed using Unified Modeling Language (UML). Then, the ASW torpedo, submarine, decoy and jammer model are developed using dEVS formalism and simulated in dEVSim++. We analyzed the submarine's evasive performance according to its maximum speed and acceleration as well as the sonar range of the ASW torpedo. We expect the results to be useful for the simulation based acquisition (SBA) of a submarine system.

关键词： evasive capability simulation based acquisition (SBA) unified modeling language (UML) submarine dEVS formalism

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Experimental Validation of deflection routing in a 3-Node Optical Burst Core Network with 40Gb/s Edge Nodes

Experimental Validation of Deflection Routing in a 3-Node Op...

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33rd European Conference and Exhibition of Optical Communication

作者： A. Al Amin M. Takenaka T. Tanemura K. Shimizu r. Inohara K. Nishimura M. Usami Y. Takita Y. Kai H. Onaka H. Uetsuka Y. Nakano Optical Industry and Technology Development Association (OITDA) Japan Research Center for Advanced Science and Technology the University of Tokyo 4-6-1 Komaba Meguro-ku 153-8904 Japan KDDI R&D Laboratories Inc. Japan Fujitsu Laboratories Limited Japan Hitachi Cable Ltd. Japan

We demonstrate deflection routing for random burst collision in a 3-node optical burst switching network testbed. Using a Ether-frame capable burst edge node, layer 2 characterization was performed, with neartheoretic... 详细信息

关键词： Optical switches Adaptive optics Bit error rate Photonics

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GaN HEMT Based doherty Amplifier for 3.5-GHz WiMAX Applications

GaN HEMT Based Doherty Amplifier for 3.5-GHz WiMAX Applicati...

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European Conference on Wireless technology

作者： Junghwan Moon Jangheon Kim Ildu Kim Young Yun Woo Sungchul Hong Han Seok Kim Jong Sung Lee Bumman Kim Department of Electrical Engineering Pohang University of Science and Technology Pohang Gyeongbuk Republic of Korea Telecommunication Research & Development Center Samsung Electronics Company Limited Suwon Gyeonggi South Korea Telecommunication R&D Center Samsung Electronics Co. LTD Suwon Gyeonggi Republic of Korea

We have implemented a doherty amplifier for 3.5-GHz World Interoperability for Microwave Access (WiMAX) applications using Eudyna 90-W (P 3dB ) Gallium-Nitride (GaN) High Electron Mobility Transistor (HEMT) because of the poor efficiency of a standard class AB amplifier when the linearity performance is good. The load modulation performance of the GaN HEMT device for the doherty operation is rather moderate but workable. The linearity is improved using the in-band error cancellation technique of the doherty amplifier. The implemented doherty amplifier has been designed at an average output power of 43 dBm, backed-off about 8 dB from the 51 dBm (P 3dB ). For WiMAX signal with 28 MHz signal bandwidth, the measured drain efficiency of the amplifier is 27.8%, and the measured relative Constellation Error (rCE) is -33.17 dB, while those of the comparable class AB amplifier are 19.42% and -24.26 dB, respectively, at the same average output power level.

关键词： Gallium nitride HEMTs WiMAX Power amplifiers Microwave amplifiers Linearity Power generation Power measurement Microwave devices MOdFETs

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Amorphization and Templated recrystallization (ATr) Study for Hybrid Orientation technology (HOT) using direct Silicon Bond (dSB) Substrates

Amorphization and Templated Recrystallization (ATR) Study fo...

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International Symposium on VLSI technology, Systems and Applications

作者： Yao-Tsung Huang Angelo Pinto Chien-Ting Lin Che-Hua Hsu Manfred ramin Mike Seacrist Mike ries Kenneth Matthews Billy Nguyen Melissa Freeman Bruce Wilks Chuck Stager Charlene Johnson Laurie denning Joe Bennett John Pilot Sachin Joshi Tung-Hsing Lee Mike Ma Osbert Cheng rick Wise Central R&D Division UMC Hsin-Chu City Taiwan R.O.C. Texas Instruments Inc. USA MEMC Electronic Materials Inc. Taiwan Advanced Technology Development Facility Inc. Taiwan Department of Electrical and Computer Engineering The University of Texas at Austin USA United Microelectronics Corp Hsinchu TW

ISBN: (纸本)142440584X

The use of hybrid orientation technology (HOT) with direct silicon bond (dSB) wafers consisting of a (110) crystal orientation layer bonded to a bulk (100) handle wafer provides promising opportunities for easier migration of bulk CMOS designs to higher performance materials. In this work, the integration of shallow-trench-isolation (STI) after amorphization and templated recrystallization (ATr) scheme for converting surface orientation from (110) to (100) was investigated. By optimizing the trade-off between ATr-induced triangular morphology and dSB layer thickness, a 3X holes mobility improvement and 36% drive current gain were achieved for PMOSFETs fabricated on (110) plane using dSB-HOT. In addition, un-loaded ring oscillators fabricated using dSB substrates show a 38% improvement compared with control CMOS on (100) wafers.

关键词： MOSFETs Silicon on insulator technology Surface morphology CMOS technology Substrates Crystalline materials Wafer bonding ring oscillators Thyristors diodes

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An Energy-efficient Architecture of Wireless Home Network Based on MAC Broadcast and Transmission Power Control

An Energy-efficient Architecture of Wireless Home Network Ba...

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2007 International Conference on Consumer Electronics (ICCE 2007)

作者： Kenji Watanabe Masanao Ise Takao Onoye Hiroaki Niwamoto Ikuo Keshi Graduate School of Information Science and Technology Osaka University Japan R&D Department 1 Synthesis Corporation Japan Corporate Research and Development Group Sharp Corporation Japan

To construct an energy-efficient wireless home network, novel architecture is proposed. In this architecture, all nodes are classified into stationary nodes and mobile nodes according to the functionality of each node. As for mobile nodes which are usually battery-powered, effective handover sequence based on MAC broadcasting and a transmission power control framework are employed. Experimental results demonstrate that in the proposed architecture, communication time and power consumption of mobile nodes can be reduced by 1.2sec and 42.8%, respectively.

关键词： Energy efficiency Home automation Broadcasting Power control ZigBee Energy consumption Network topology research and development Mobile communication routing

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