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2007 International Conference on Consumer Electronics (ICCE 2007)

作者： Kenji Watanabe Masanao Ise Takao Onoye Hiroaki Niwamoto Ikuo Keshi Graduate School of Information Science and Technology Osaka University Japan R&D Department 1 Synthesis Corporation Japan Corporate Research and Development Group Sharp Corporation Japan

To construct an energy-efficient wireless home network, novel architecture is proposed. In this architecture, all nodes are classified into stationary nodes and mobile nodes according to the functionality of each node. As for mobile nodes which are usually battery-powered, effective handover sequence based on MAC broadcasting and a transmission power control framework are employed. Experimental results demonstrate that in the proposed architecture, communication time and power consumption of mobile nodes can be reduced by 1.2sec and 42.8%, respectively.

关键词： Energy efficiency Home automation Broadcasting Power control ZigBee Energy consumption Network topology research and development Mobile communication routing

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Hierarchical Power distribution with 20 Power domains in 90-nm Low-Power Multi-CPU Processor

Hierarchical Power Distribution with 20 Power Domains in 90-...

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IEEE International Conference on Integrated Circuit design and technology (ICICdT)

作者： Yusuke Kanno Hiroyuki Mizuno Yoshihiko Yasu Kenji Hirose Yasuhisa Shimazaki Tadashi Hoshi Yujiro Miyairi Toshifumi Ishii Tetsuya Yamada Takahiro Irita Toshihiro Hattori Kazumasa Yanagisawa Naohiko Irie Central Research Laboratory Hitachi Ltd. Kokubunii Tokyo Japan R&D Group Hitachi Ltd. Chiyoda-ku Tokyo Japan Renesas Technology Corp. Kodaira Tokyo Japan Renesas Technology Corporation Kodaira Tokyo Japan Hitachi ULSI Systems Co Ltd. Fukuoka Fukuoka Japan Hitachi Ltd. Central Research and Development Laboratory Kokubunji Tokyo Japan

Hierarchical power distribution with a power tree has been developed. The key features are power tree management rules and a distributed common power-domain implementation. The hierarchical power distribution supports a fine-grained power gating with dozens of power domains, which is analogous to a fine-grained clock gating. Leakage currents of a 1,000,000-gate power domain were effectively reduced to 1/4,000 in multi-CPU SoCs with minimal area overhead.

关键词： Power distribution System-on-a-chip Clocks Leakage current Fabrication Large scale integration digital signal processing chips Circuits repeaters Laboratories

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Estimated beam pattern and echolocation characteristics of clicks recorded from a free-ranging Ganges river dolphin

Estimated beam pattern and echolocation characteristics of c...

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International Symposium on Underwater technology

作者： Tamaki Ura rajendar Bahl Harumi Sugimatsu Junichi Kojima Tomoki Inoue Tetsuo Fukuchi Sandeep Behera Ajit Pattnaik Muntaz Khan Sudhakar Kar Chandra Sekhar Kar Institute of Industrial Science University of Tokyo Indian Institute of Technology Delhi India Institute of Industrial Science University of Tokyo Japan KDDI R&D Laboratories Inc. Japan System Giken Co. Ltd. WWF-India India Chilika Development Authority Parallel Geometry Inc. Office of the Principal CCF(Wildlife) & Chief Wildlife Warden

recordings of bio-sonar clicks from a free-ranging Ganges river dolphin (Platanista gangetica) in Budhabalanga river in Orissa, India have been made for the first time in April 2006. A high frequency multi-hydrophone 3.2 meter long array composed of three hydrophones forming an equispaced linear array and another two hydrophones in conjunction with the central hydrophone forming a small SSBL triangular array in a plane perpendicular to the array axis was used. The array structure was deployed both in horizontal and vertical configurations. The click sounds of the dolphin received on each hydrophone were sampled at a rate of 500 kHz per channel and recorded over a period of 2 days. An estimate of the dolphin's 3-d location was made using the relative delays of the click signal at the hydrophones. From these sampled click data, the sonar beam pattern of the animal (in both horizontal plane and vertical plane) has been estimated using difference of ASL (apparent source level of the dolphin) and the absolute angles of the dolphin location between the central hydrophone and the other two peripheral hydrophones for the "on axis clicks". The dolphin made several "runs" towards the array during the observation period. The variation of ASL with the range of the dolphin during its approach towards the array showed a systematic trend of reduction in ASL as the range reduced. This suggests that the animal was echolocating on the array as a possible target. The results also suggest that the animal can exercise control of the transmit signal level.

关键词： rivers dolphins Sonar equipment Animals Frequency delay estimation Acoustic beams Acoustic measurements Hydrogen research and development

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On-panel Analog Output Buffer for data driver with Consideration of device Characteristic Variation in LTPS technology

On-panel Analog Output Buffer for Data Driver with Considera...

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2007亚洲显示国际会议

作者： Yu-Hsuan Li Ming-dou Ker Chun-Yuan Hsu Nanoelectronics and Gigascale Systems Laboratory Institute of Electronics National Chiao-Tung University Hsinchu Taiwan China Nanoelectronics and Gigascale Systems Laboratory Institute of Electronics National Chiao-Tung University Hsinchu Taiwan China Panel Design Dept. Technology Development General Division R&D Center TFT Business Unit Chunghwa Picture Tubes LTD. Taoyuan Taiwan China

A class-A analog output buffer for the data driver with consideration of device variation in low temperature poly-silicon (LTPS) technology is *** high enough mobility,LTPS thin-film transistor (TFT) has been suitable for the realization with driver circuits on the LCd panel to meet system-on-panel (SoP) ***,the device char- acteristics of poly-Si TFTs have poor uniformity and suffer from huge variations in different locations due to the poly-sili- con grain ***,the variation on device characteristic of the N-type TFI" is much worse than that of P-type ***,replacing the critical part of the analog circuit by P-TFTs is a good design solution for suppressing device characteristic variation in order to improve manufacturing yield of the analog circuit on panel.A class-A output buffer real- ized with P-TFTs as the input stage has been designed and fabricated in a 8-μm LTPS *** the experimental results,this proposed analog output buffer with P-TFTs as input stage can be operated at 50-kHz operation frequency with at least a 1-to-9 V output swing for using in the on-panel data drivers to provide a uniform brightness and high resolution display.

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Novel Heat dissipating Cell Scheme for Improving a reset distribution in a 512M Phase-change random Access Memory (PrAM)

Novel Heat Dissipating Cell Scheme for Improving a Reset Dis...

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Symposium on VLSI technology

作者： d.H. Kang J.S. Kim Y.r. Kim Y.T. Kim M.K. Lee Y.J. Jun J.H. Park F. Yeung C.W. Jeong J. Yu J.H. Kong d.W. Ha S.A. Song J. Park Y.H. Park Y.J. Song C.Y. Eum K.C. ryoo J.M. Shin d.W. Lim S.S. Park J.H. Kim W.I. Park K.r. Sim J.H. Cheong J.H. Oh J.I. Kim Y.T. Oh K.W. Lee S.P. Koh S.H. Eun N.B. Kim G.H. Koh G.T. Jeong H.S. Jeong Kinam Kim Advanced Technology Development Team 2 Yongin-City Gyunggi-Do South Korea Semi. Business Samsung Electronic Co. Ltd. Yongin-City Gyunggi-Do South Korea CAE Yongin-City Gyunggi-Do South Korea Analytical Engineering Center Samsung Advanced Institute of Technology Yongin-City Gyunggi-Do South Korea Process Analysis & Control Group Memory R&D Div. Yongin-City Gyunggi-Do South Korea

ISBN: (纸本)4900784036;97

Programming with larger current than optimized one is often preferable to ensure a good resistance distribution of high-resistive reset state in high-density phase-change random access memories because it is very effective to increase the resistance of cells to a target value. In this paper, we firstly report that this larger current writing may conversely degrade the reset distribution by reducing the resistance of normal cells via the partial crystallization of amorphous Ge 2 Sb 2 Te 5 and this degradation can be suppressed by designing a novel cell structure with a heat dissipating layer.

关键词： Phase change random access memory Crystallization degradation Amorphous materials Writing resistance heating Temperature Phase change materials Switches Cooling

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A CQI FEEdBACK rEdUCTION SCHEME FOr MULTI-USEr MIMO/OFdMA SYSTEMS

A CQI FEEDBACK REDUCTION SCHEME FOR MULTI-USER MIMO/OFDMA SY...

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18th International Symposium on Personal, Indoor and Mobile radio Communications (PIMrC 2007), vol.3

作者： Myeon-gyun Cho Youngju Kim Jaekon Lee daesik Hong 4G System Development Team Telecommunication R&D Center Samsung Electronics Company Limited Suwon South Korea Information and Telecommunication Laboratory Center for Information Technology Yonsei University Seoul South Korea

An opportunistic scheduling is adopted to improve the capacity of the system by exploiting the multiuser diversity of multiuser MIMO (MU-MIMO)systems. However, it requires a large amount of feedback carrying the channel quality information (CQI) of each user to the transmitter. The considered Per User Unitary and rate Control (PU{sup}2rC) needs to feedback the preferred precoding index and its CQIs, and it has a defect in scheduling the streams for the grouped user. In order to overcome these drawbacks, a novel feedback reduction scheme is proposed and is modified for OFdMA systems in this paper. It employs transmitter controlled precoding and opportunistic feedback (TCP-OFB) in conjunction with frequency scheduling. The simulation results demonstrate that TCP-OFB/OFdMA shows comparable performance to PU{sup}2rC while it only requires far reduced feedback load.

关键词： Feedback MIMO Scheduling Multiaccess communication radio transmitters Access protocols Land mobile radio Mobile communication research and development Information technology

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Correction to “Edge Profile Effect of Tunnel Oxide on Erase Threshold Voltage distributions in Flash Memory Cells”

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IEEE Transactions on Electron devices 2007年第4期54卷 893-893页

作者： Bomsoo Kim Wook-Hyun Kwon Chang-Ki Baek Younghwan Son Chan-Kwang Park Kinam Kim dae M. Kim School of Computational Sciences Korea Institute of Advanced Study Seoul South Korea Advanced Technology Development Team Semiconductor R&D Center Samsung Electronics Company Limited Gyeonggi South Korea

In the original article by B. Kim (see ibid., vol. 53, no. 12, p. 3012-3019, dec. 2006) the biography for dr. Kinam Kim was out of date. A more current one is given.

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Plant-derived Vaccines: A New Approach to International Public Health

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Journal of Food Science 2008年第1期69卷

作者： CHArLES J. ArNTZEN rICHArd T. M AHONEY About the authors: Charles Arntzen was appointed to the Florence Ely Nelson Presidential Endowed Chair at Arizona State Univ. in Tempe in 2000. He also serves as the Founding Director of the Arizona Biomedical Institute. Prior to joining ASU Dr. Arntzen was the president and CEO of the Boyce Thompson Institute for Plant Research in Ithaca New York. He has served on many national and international committees including service as Chairman of the National Institutes of Health's Biotechnology Policy Board and as Chair of the Biobased Industrial Products Committee for the National Academy of Sciences. He was elected to the US National Academy of Sciences in 1983 and to the National Academy of India the following year. He currently serves as a member of President George W. Bush's Council of Advisors on Science & Technology. Richard Mahoney joined the faculty of Arizona State Univ. in 2002 and with Dr. Arntzen is the co-founder of the proVacs (production of Vaccines using Applied Crop Science) Center. He has been an international pioneer in public sector management of intellectual property and in policy issues related to the global introduction of vaccines. He formerly served as Vice President of PATH (the Program for Appropriate Technology in Health Seattle Washington) as chairman of the International Task Force on Hepatitis B Immunization and as co-founder and Chief Development and Administrative Officer of IVI (the International Vaccine Institute Seoul Korea). He has spent the past 15 years focusing on vaccine production and supply issues and has identified intellectual property as a crucial element in assuring vaccine supply to the developing world. Based upon this experience he was the architect of recently created the Center for Management of Intellectual Property in Health R&D (MIHR) program which is based in London England. Their mailing address is: Arizona Biomedical Institute Arizona State Univ. PO Box 871601 Tempe AZ 85287-1601 USA.

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Small-Signal Analysis and Modeling of Asymmetric Source/drain Parasitic resistances for drAM Access Transistors in Low-Power Applications

Small-Signal Analysis and Modeling of Asymmetric Source/Drai...

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International Conference on Simulation of Semiconductor Processes and devices (SISPAd)

作者： Young Pil Kim Matthew Ulrich Praveen Vaidyanathan Venkat Ananthan Chandra Mouli Kunal Parekh R&D Process Development Micron Technology Inc. Boise ID USA

The small-signal conductance technique was extended to extract asymmetric source/drain parasitic resistances. It was also applied in order to analyze the t Wr delay of drAM cell transistors in production and to develop a non-planar cell transistor such as recessed access device (rAd) for low-power drAM cells. Factors limiting the drive current for planar and non-planar access transistors in the low-power drAM cells were discussed

关键词： random access memory data mining Threshold voltage Production Equations research and development delay drives Monitoring Manufacturing

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20V-40V Symmetrical Vertical Trench nMOS (SVT MOS) design for display driver ICs

20V-40V Symmetrical Vertical Trench nMOS (SVT MOS) design fo...

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International Symposium on Power Semiconductor devices and Ics (ISPSd)

作者： M. Annese P. Montanini F. Toia L. Zullino C. Contiero STMicroelectronics FTM-R&D Smart Power & High Voltage Technology Platform Development Agrate-Brianza Agrate Brianza Italy

This paper presents a novel 20V/40V symmetrical vertical trench MOS (SVT MOS) having both drain extension and gate realized in vertical direction respect to the silicon surface. Using silicon depth to realize the gate and to withstand high voltage, carefully designing doping implants and realizing a vertical field oxide, it was possible to reduce more than 60% the device pitch (i.e. spacing between half drain contact and half source contact) maintaining the same performance of equivalent lateral device

关键词： MOS devices displays Voltage Silicon Etching Thin film transistors Lithography doping CMOS technology driver circuits

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