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IEEE Conference on Vehicular technology (VTC)

作者： Murugaraj Shanmugam Srinath Thiruvengadam Christophe Cordier Jean-pierre Le rouzic Siemens AG Corporate Technology Germany France Telecom Research & Development MAPS France France Telecom R&D / MAPS France

There are number of mechanisms and algorithms available to achieve ad hoc communication. However, establishing communication between heterogeneous networks with fragile connectivity, is still a challenging task. Existing transport protocols like TCP are not well suited to networks with instable bandwidth and connectivity. In such environments, services cannot be reliably offered and hence more intelligent protocols and architectures should be used. For such scenarios, we study the feasibility of using opportunistic forwarding to achieve end-to-end communication. In this paper, we investigate the usage of delay tolerant networks based protocols for achieving reliable communication in such scenarios. Specifically, we study the provision of emergency services and show how mobile users could make use of the ad hoc peers to reach an appropriate answering point e.g., public safety answering point using the delay tolerant approach. Moreover, we have extended the usage of dTN for complementary services such as buddy communication.

关键词： Emergency services delay disruption tolerant networking Mobile communication Protocols Peer to peer computing routing Telecommunication network reliability Safety Ad hoc networks

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INFLUENCE OF ELECTrICAL ANd STrUCTUrAL PArAMETErS ON THE PErFOrMANCE OF THE SPACErS IN HOPFEd

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Journal of Electronics(China) 2006年第1期23卷 117-120页

作者： Zhong Xuefei Wilbert van der Poel daniel den Engelsen Yin Hanchun Jin Dong Fei Display Technology R＆D Center Southeast University Nanjing 210096 China LG. Philips Displays Product ＆ Process Development Eindhoven the NetheHands

The HOPping Field Emission display （HOPFEd） is a new architecture for field emission displays. The main difference between a conventional Field Emission display （FEd） device and a ItOPFEd lies in the spacer structure. In a HOPFEd, two dielectric plates, named hop and flu spacer, are sandwiched between the emitter and the front plate. The objective of this spacer structure is to improve the performance oF a FEd substantially with notable contrast, color purity and luminance uniformity. In order to optimize the structure of the device and to make the electron spot on the screen match the requirement of the phosphor dot dimension, the influence of electrical and structural parameters of the device on the electron spot profile was studied by numerical simulation in this paper. Monte Carlo method was employed to calculate the potential distribution inside hop and flu spacers due to secondary electrons mechanism plays an important role in HOPFEd. The results indicated that the potential distribution in the spacers and spot profile depended strongly on the hop voltage, anode voltage and spacer＇s layout. This study may provide a useful theoretical support for optimizing the structure in HOPFEd.

关键词： Hopping field emission display Monte Carlo calculation Hop voltage, Anode voltage Spacer＇s layout

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Abstracts for the 6th Congress of Asian Sleep research Society

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Sleep and Biological rhythms 2009年第4期7卷 A1-A49页

作者： Seog Ju Kim In Kyoon Lyoo Yu-Jin Lee do-Un Jeong Hirohiko Kanai Masanori Ookubo Atsushi Yoshimura Masako Okawa Noto Yamada Takeshi Munezawa Yoshitaka Kaneita Yoneatsu Osaki Hideyuki Kanda Tadahiro Ohtsu Masumi Minowa Kenji Suzuki Susumu Hijuchi Hiroyuki Suzuki Takashi Ohida Takashi Abe Yoko Komada Shoichi Asaoka Yuichi Inoue Jin-Seong Lee Sang-Yong Cho deependra Kumar Hruda N. Mallick Velayudhan M. Kumar Mahesh K. Kaushik Akihiro Karashima Noiihiro Katayama Mitsuyuki Nakao ravindra P. Nagendra Sathiamma Sulekha Sathyaprabha T. Narasappa Pradhan Nityanadan Bindu M. Kutty M. Nirmala P. N. ravindra Basavaraj ramappa Tubaki T. N. Sathyaprabha d. Sudhakar G. S. Lavekar C. r. Chandrashekar Kazuyoshi Kitaoka Mika Shimizu Sachiko Chikahisa Kazuo Yoshizaki Hiroyoshi Sei Jong-Won Kim Misa Takegami Shin Yamazaki Yasuaki Hayashino rei Ono Koji Otani Miho Sekiguchi Shinichi Konno Shunichi Fukuhara Antonia J. Jakobson Paul Fitzgerald russell Conduit Xin Shirley Li Siu Ping Joyce Lam Wai Man Mandy Yu Yun Kwok Wing Kazue Okamoto-Mizuno Koh Mizuno Mituaki Yamamoto Shuichiro Shirakawa Hirokazu doi Mikako Kato Kazuyuki Shinohara Masako Tamaki Shiori Matsuda Katsuo Yamazaki Tadao Hori Keiko Ogawa Kazumi Takahashi Kunio Kitahama Katuo Yamazaki Yoshimasa Koyama Kohei Shioda Yugo Ueda Yukiko Nakamura Clara Inoue Kazushige Goto Sunao Uchida Yuko Morita Yoshiko Honda Tohru Kodama Mari Hagihara Toru Nakajima Masato Saito Yoshihiko Koga Shinichiro Tanaka Hiroshi Yamadera Madoka Takahara Sachiko Suwa Minoru Onozuka Sadao Sato Fumiharu Togo Taiki Komatsu Takeshi Mitani Jongbae Choi Bin Zhang Taeko Sasai Hiromi Mitsubayashi Mitsuhiro Ohtsu Isao Hasegawa Tatsuya Ishii Akira Komori Asami Suzuki Yue Nakahara Mitsuyasu Hiroki Mariko Nakauma Nobuo Someya Tomomasa Ochiai Shouhei Komori rayleigh Ping-Ying Chiang Zai-Ting Yeh Seong T. Kim Seung H. Yoon Jeong S. Kwon Jong H. Choi Hyung J. Ahn Youngsoo Kim Bolortuya Yunren Lichao Chen radhika Basheer robert W. Mccarley robert E. Strecker Makoto Honda Tetsuaki Arai Miyuki Fukazawa Yutaka Honda Kuniaki T Department of Psychiatry Gachon University of Medicine and Science Incheon Republic of Korea Department of Psychiatry Seoul National University Seoul Republic of Korea Department of Neuropsychiatry and Center for Sleep and Chronobiology Seoul National University Hospital Seoul Republic of Korea Department of Neuropsychiatry Seoul National University Hospital Seoul Republic of Korea Seoul National University Hospital Seoul Republic of Korea Department of Psychiatry Shiga University of Medical Science Otsu Japan Division of Public Health Department of Social Medicine Nihon University School of Medicine Tokyo Japan Department of Public Health Nihon University School of Medicine Tokyo Japan Division of Environmental and Preventive Medicine Department of Social Medicine Faculty of Medicine Tottori University Yonago Japan Department of Hygiene and Preventive Medicine Fukushima Medical University Fukushima Japan Department of Public Health Showa University School of Medicine Tokyo Japan Faculty of Humanities Seitoku University Matsudo Japan Section on Behavioral Science Division of Clinical Research National Hospital Organization Kurihama Alcoholism Center Yokosuka Japan Department of Otolaryngology Second Hospital Fujita Health University Nagoya Japan National Hospital Organization Kurihama Alcoholism Center Kanagawa Japan Metropolitan Police Department Criminal Investigation Laboratory Tokyo Japan Japan Somnology Center Neuropsychiatrie Research Institute Tokyo Japan Department of Somnology Tokyo Medical University Tokyo Japan Japan Somnology Center Neuropsychiatric Research Institute Tokyo Japan Department of Somnology Tokyo Medical and Dental University Tokyo Japan Center for Sleep and Chronobiology Department of Psychiatry and Behavioral Science Seoul National University College of Medicine Seoul Republic of Korea Department of Psychiatry and Behavioral Science Center for Sleep and Chronobiology Seoul Republic of Korea Department of Physiology Al

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A Study of Intermetallic Compounds in Tin Bumps during Multi-reflows

A Study of Intermetallic Compounds in Tin Bumps during Multi...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Lei Nie Jian Cai Xiao Peng Nan Zhang Shuidi Wang Songliang Jia Institute of Microelectronics Tsinghua University Beijing China Electronic Packaging Technology Research & Development Center RIIT Tsinghua University Beijing China Institute of Microelectronics Tsinghua University Beijing 100084 China Electronic Packaging Technology R&D Center RIIT Tsinghua University Beijing 100084 China

An electroplating pure tin bumping technology has been developed in house with commercial chemicals. Sputtered TiW and Cu were used as under bump metallurgy (UBM). The tin bumps were peripheral distributed on the die. The electroplated bumps had mushroom shape, and the height is about 70mum. The as-reflow bumps had sleek shape, and the diameter is about 100mum. For as-reflow bumps, scanning electron microscope was used for observing the microstructure of interface, and energy dispersive X-ray microanalysis was used for investigating the composition of the intermetallic compounds. Multireflow tests were used as accelerating tests for tin bumps. The samples reflowed 1 times to 10 times respectively. Ball shear tests were used for evaluate the strength of different samples of multi-reflow tests. There are two layers of intermetallic compounds between copper and tin, which are Cu6Sn5 and Cu3Sn. For as-reflow bumps, the thickness of Cu3Sn layer is too thin to detect, and its growth need additional contact time. As the reflows time increased, Cu6Sn5 and Cu3Sn layers both grow, and the thickness of Cu6Sn5 is thicker than that of Cu3Sn. The total thickness of intermetallic compound has an exponential relationship with the times of reflow. The mechanism of intermetallic compounds growth is the diffusion of liquid tin to solid copper. The simplified diffusion model in the intermetallic interface is similar to one dimension nonequilibrium diffusion in the plate. The shear strength results of different samples which had multireflow tests were found to have little discrepancy with each other, that means the performance of tin bumps were stable

关键词： Intermetallic Tin Testing Copper Chemical technology Shape Scanning electron microscopy Microstructure dispersion Life estimation

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Facet Passivation of GaInAsP/InP Laser diodes by Aluminum Ultrathin Layer Insertion

Facet Passivation of GaInAsP/InP Laser Diodes by Aluminum Ul...

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IEEE International Semiconductor Laser Conference

作者： H. Ichikawa C. Fukuda K. Hamada T. Nakabayashi Analysis technology research center Sumitomo Electric Industries Limited Yokohama Japan Transmission devices Research and Development laboratories Sumitomo Electric Industries Limited Yokohama Japan Transmission Devices R&D Labs. Sumitomo Electr. Ind. Ltd. Yokohama

We demonstrated that facet degradation is successfully suppressed by inserting aluminum ultra-thin layer between semiconductor and dielectric coating films. We also clarified that aluminum layer suppress lack of phosp... 详细信息

ISBN: (纸本)078039559X

关键词： Passivation Indium phosphide diode lasers Aluminum degradation Coatings Optical surface waves Argon Oxidation Optical films

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Band-Edge High-Performance High-k/Metal Gate n-MOSFETs Using Cap Layers Containing Group IIA and IIIB Elements with Gate-First Processing for 45 nm and Beyond

Band-Edge High-Performance High-k/Metal Gate n-MOSFETs Using...

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Symposium on VLSI technology

作者： T.C. Chen G. Shahidi S. Guha M. Ieong M.P. Chudzik r. Jammy P. ronsheim P.E. Batson Y. Wang d.L. Lacey J.-P. Locquet P. Jamison A. Callegari E. Cartier M. Steen M. Copel J. Arnold S. Brown J. Stathis S. Zafar Y.H. Kim B. doris B.P. Linder N.A. Bojarczuk V.K. Paruchuri V. Narayanan IBM Semiconductor Research and Development Center (SRDC) Yorktown Heights NY USA IBM Systems and Technology Division Hopewell Junction NY USA IBM Semicond. R&D Center T. J. Watson Res. Center Yorktown Heights NY

We have fabricated electrically reliable band-edge (BE) high-k/metal nMOSFETs stable to 1000degC, that exhibit the highest mobility (203 cm 2 /Vs @ 1MV/cm) at the thinnest T inv (1.4 nm) reported to date. These stacks are formed by capping HfO 2 with ultra-thin layers containing strongly electropositive gp. IIA and IIIB elements (e.g. Mg and La), prior to deposition of the TiN/Poly-Si electrode stack, in a conventional gate-first flow. Increasing the cap thickness tunes the V t /V fb from a midgap position to BE while maintaining high mobility and good PBTI. The addition of La can enhance the effective k value of the dielectric stack, resulting in EOTs < 1nm. Short channel devices with band edge characteristics are demonstrated down to 60 nm. Finally, possible mechanisms to explain the nFET V t shift are discussed

关键词： High K dielectric materials High-K gate dielectrics MOSFET circuits Hafnium oxide Tin Channel bank filters Electrodes Electron mobility Jamming research and development

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Highly Manufacturable Single Metal Gate Process Using Ultra-Thin Metal Inserted Poly-Si Stack (UT-MIPS)

Highly Manufacturable Single Metal Gate Process Using Ultra-...

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International Electron devices Meeting (IEdM)

作者： Sung Kee Han Hyung-Suk Jung Hajin Lim Min Joo Kim Cheol-kyu Lee Mong sub Lee Young-sub You Hion Suck Baik Young Su Chung Eunha Lee Jong-Ho Lee Nae In Lee Ho-Kyu Kang Advanced Process Development Team System LSI Division Samsung Electronics Company Limited Yongin si Gyeonggi South Korea Semiconductor R&D Center Memory Division Samsung Electronics Company Limited South Korea AE Center Samsung Advanced Institute of Technology Gyeonggi South Korea

The authors have successfully developed a mass production friendly single metal gate process utilizing an ultra-thin metal inserted poly-Si stack (UT-MIPS) structure. First, the inserted metal gate thickness effects on device performances are carefully examined, and then the other parameters are optimized to give the best performance. As a results, low and symmetrical short channel Vth (0.44/-0.48 V for n/pMOS) and excellent drive currents (620/230 muA/mum for n/pMOS at Ioff =20pA/mum and Vdd=1.2 V) are obtained without using any mobility enhancement strain technology. The estimated operation voltage for 10 years lifetime of optimized UT-MIPS devices (1.25 V for nMOS PBTI and 1.5 V pMOS NBTI) are well beyond the 1.2 V, showing the good reliability characteristics of UT-MIPS devices as well

关键词： Manufacturing processes Mass production Optimized production technology dielectrics Large scale integration research and development Capacitive sensors Life estimation Lifetime estimation Voltage

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reliability Issues and Models of sub-90nm NANd Flash Memory Cells

Reliability Issues and Models of sub-90nm NAND Flash Memory ...

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2006 8th International Conference on Solid-State and Integrated Circuit technology

作者： Hong Yang Hyunjae Kim Sung-il Park Jongseob Kim Sung-Hoon Lee Jung-Ki Choi duhyun Hwang Chulsung Kim Mincheol Park Keun-Ho Lee Young-Kwan Park Jai Kwang Shin Jeong-Taek Kong CAE Team Memory DivisionSemiconductor BusinessSamsung Electronics Co.Ltd.San Nano CSE Project Team Samsung Advanced Institute of Technology R&D TEST Engineering Group Samsung Electronics Co.Ltd. Process Development Team Samsung Electronics Co.Ltd. Flash Process Architecture Team Semiconductor BusinessSamsung Electronics Co.Ltd.

ISBN: (纸本)1424401607

The reliability issues,including 100k cycle's endurance and 2 hours high temperature storage（HTS:150℃, 200℃and 250℃） of sub-90nm NANd Flash cells,are ***,the trap generation models in endurance and interface trap recovery model in HTS are *** characteristics show that the interface trap and bulk trap generation have a power-dependence on program/erase cycle count(△N,△N∝cycle^m).The exponent of interface trap generation both program and erase are 0.62;while in bulk trap generation,the exponent for the cycle count is 0.30,which is extracted only from the erased cells due to varying stored charges of programmed cells during tunnel oxide *** HTS characteristics show that the interface trap recovery and electron-detrapping are the major mechanisms for sub-90nm NANd Flash memory,while stress induced leakage current（SILC） is almost ***,based on the reaction-diffusion （r-d）model and Arrhenius approximation,the simplified interface recovery model in HTS is proposed as:dN/N=-k·exp（-E/kT）.dt.

关键词： HTS reliability Issues and Models of sub-90nm NANd Flash Memory Cells

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Trap Layer Engineered FinFET NANd Flash with Enhanced Memory Window

Trap Layer Engineered FinFET NAND Flash with Enhanced Memory...

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Symposium on VLSI technology

作者： Y. Ahn J.-d. Choe J. Lee d. Choi E. Cho B. Choi S.-H. Lee S.-K. Sung C.-H. Lee S. Cheong d. Lee S. Kim d. Park B.-I. ryu Device Research Team Samsung Electronics Co. Yongin-City Gyeonggi-Do Korea Semiconductor R&D Center Samsung Electronics Co. Yongin-City Gyeonggi-Do 449-711 Korea Process Development Team Samsung Electronics Co. Yongin-City Gyeonggi-Do Korea Manufacturing Technology Team Samsung Electronics Co. Yongin-City Gyeonggi-Do Korea

This paper presents the trap layer engineered body-tied FinFET device for MLC NANd flash application. The device design parameters for high density NANd flash memory have been considered, and the advantages of FinFET structure and high-k blocking dielectric in such device have been demonstrated. Based on the WN nano-dot memory device, the trap layer engineering using nitride layer has been performed, and the results show that the memory window is improved from 2.6 V to 7.8 V by utilizing engineered trap layer at 14 MV/cm F-N programming, and it is proposed as a possible MLC NANd device structure

关键词： FinFETs Electron traps Manufacturing processes Pulp manufacturing Semiconductor device manufacture research and development High K dielectric materials High-K gate dielectrics dielectric devices Nanoscale devices

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Effect of Laser Bias Current to the Third Order Intermodulation in the radio over Fibre System

Effect of Laser Bias Current to the Third Order Intermodulat...

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International rF and Microwave Conference, rFM

作者： S. Yaakob W. r. Wan Abdullah M. N. Osman A. K. Zamzuri r. Mohamad M. r. Yahya A. F. Awang Mat M. r. Mokhtar H. A. Abdul rashid TM Research and Development Sdn Bhd UPM-MTDC Technology Incubation Center One Serdang Selangor Darul Ehsan Malaysia TM R&D Sdn Bhd Serdang Selangor Malaysia TM R&D Sdn Bhd Idea Tower UPM-MTDC Incubation Centre One Lebuh Silikon 43400 Serdang Selangor Malaysia. wanrazli@tmrnd.com.my romli@tmrnd.com.my razman@tmrnd.com.my ridz@mmu.edu.my TM R&D Sdn Bhd Idea Tower UPM-MTDC Incubation Centre One Lebuh Silikon 43400 Serdang Selangor Malaysia. drfatah@tmrnd.com.my romli@tmrnd.com.my razman@tmrnd.com.my ridz@mmu.edu.my Faculty of Engineering Multimedia University Cyberjaya Selangor Malaysia Faculty of Engineering Multimedia University Jalan Multimedia 63100 Cyberjaya Selangor Malaysia. hairul.azhar@mmu.edu.my romli@tmrnd.com.my razman@tmrnd.com.my ridz@mmu.edu.my

Third order intermodulation (IM 3 ) can cause non-linearity effects which result in interference and crosstalk between the subcarriers in radio over fibre (rOF) transmissions. This paper presents the experimental results of the effect of varying the magnitude of the laser bias current on the IM 3 in an rOF system with direct modulation. We also investigate the behaviour of the system spurious free dynamic range (SFdr) with the bias current variation. The results show that there will be an optimum bias current range for a given range of the radio frequency (rF) input power in order to minimise the IM 3 effect and obtain the best possible SFdr for the system

关键词： Fiber lasers Optical fibers radio frequency Optical modulation Semiconductor lasers Fiber nonlinear optics Optical crosstalk Intensity modulation Masers Multimedia systems

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