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检索条件"机构=R&D and Technology Development"
1031 条 记 录,以下是891-900 订阅
real time 3d nonlinear microscopy
Real time 3D nonlinear microscopy
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Conference on Lasers and Electro-Optics Europe (CLEO EUrOPE)
作者: J. Fekete A. Banyasz r. Szipocs G. Katona A. Lukacs B. Csaszar Z. Varallyay A. Saghy P. Maak B. rozsa E.S. Vizi Research Institute of Solid State Physics and Optics Budapest Hungary Research Institute for for Solid State Physics and Optics Budapest Hungary Department for Pharmacology Institute for Experimental Medicine R&D Ultrafast Lasers Kft. Budapest Hungary Budapest University of Technology and Economics Budapest Hungary Research and Development Ultrafast Lasers Kft Budapest Hungary Institute for Experimental Medicine Department for Pharmacology Budapest Hungary
We propose a nonlinear microscope scheme being capable of simultaneous, 3d investigation of the electric activity pattern of neural networks or signal summation rules of individual neurons in a 0.6times0.6times 0.2 mm... 详细信息
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Post-fluorination of fluoride films for VUV lithography in order to improve their optical properties
Post-fluorination of fluoride films for VUV lithography in o...
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Optical Interference Coatings, OIC 2004
作者: Taki, Yusuke Watanabe, Shunji Tanaka, Akira R&D Section Lens Engineering Development Dept. Core Technology Center Nikon Corporation 10-1 Asamizodai 1-chome Kanagawa Sagamihara228-0828 Japan
Post-fluorination process that consists of 'fluorination of F-poor areas' and 'modification to denser structure' has been developed. This process reduces the optical losses of fluoride films and preven... 详细信息
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design and Performance Evaluation of roaming Service base on MIP in Heterogeneous Network
Design and Performance Evaluation of Roaming Service base on...
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The 2004 Joint Conference of the 10~(th) Asia-Pacific Conference on Communications and the 5~(th) International Symposium on Multi-dimensional Mobile Communications
作者: SeongSoo Park New Technology Development Team Network R&D Center SK Telecom
In this paper, we describe the roaming service with mobile IP between public WLAN and cdma2000 1x design, and show the implementation in SK Telecom cellular network. In terms of network configuration, the coverage of ... 详细信息
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Some Items of Interest to Process r&d Chemists and Engineers
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Organic Process research & development 2005年 第5期9卷 522-536页
作者: Mark McLaughlin Silvina García-rubio Ulf Tilstam ramaiah Muthyala Octavio Augusto Ceva Antunes Trevor Laird Ganapati d. Yadav Andrei Zlota Merck & Co. Inc. Rahway New Jersey 07065 U.S.A. E-mail: Albany Molecular Research Inc. Syracuse Research Center 7001 Performance Drive North Syracuse New York 13212 U.S.A. E-mail: Lilly Development Centre S.A. Parc Scientifique de Louvain-la-Neuve Rue Granbonpre 11 B-1348 Mont-Saint-Guibert Belgium E-mail: Department of Medicinal Chemistry University of Minnesota College of Pharmacy 7-125E Weaver-Densford Hall 308 Harvard Street S.E. Minneapolis Minnesota 55455 U.S.A. E-mail: Departamento de Quimica Inorganica Instituto de Quimica UFRJ CT Bloco A Lab. 641 Cidade Universitaria Rio de Janeiro RJ 21949-900 Brazil E-mail: Editor Department of Chemical Engineering University Institute of Chemical Technology University of Mumbai Matunga Mumbai - 400 019 India E-mail: Chemical R&D Sepracor Inc. 84 Waterford Drive Marlborough Massachusetts 01752 U.S.A. E-mail:
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Implementation of seamless roaming service in hybrid network
Implementation of seamless roaming service in hybrid network
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IEEE International Symposium on Personal, Indoor and Mobile radio Communications (PIMrC)
作者: SeongSoo Park Network R&D Center New Technology Development Team SK Telecom South Korea
We describe the roaming service with mobile IP between public WLAN and cdma2000 1/spl times/ Ev-do design, and implemented. In terms of network configuration, the coverage of public WLAN network is overlapped with tha... 详细信息
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Hot Carrier Issues in Thin Body double-Gate MOSFET
Hot Carrier Issues in Thin Body Double-Gate MOSFET
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2004 7th International Conference on Solid-State and Integrated Circuits technology(ICSICT 2004)
作者: Eun-Jung Yoon Chang-Woo Oh Sung-Young Lee Sung-Min Kim Kyeong-Hwan Yeo Min-Sang Kim Sung-Hwan Kim dong-Uk Choi Jeong-dong Choe dong-Won Kim donggun Park Kinam Kim Device Research Team R&D CenterSamsung Electronics Co.LTD. Advanced Technology Development Team R&D CenterSamsung Electronics Co.LTD.
In this paper,the hot carrier reliability of double-gate (dG) MOSFETs is evaluated by *** effect of floating body and volume inversion on hot carrier injection in dG is *** proves that thin body dG has good immunity t... 详细信息
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Screen printed carbon nanotube field emitter array for lighting source application
Screen printed carbon nanotube field emitter array for light...
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International Conference on Vacuum Nanoelectronics (IVNC)
作者: Jae-Hong Park Jin-San Moon Jae-Hee Han A.S. Berdinsky Ji-Beom Yoo Joong-Woo Nam Jonghwan Park C.G. Lee d.H. Choi Byeong Kyoo Shon Hak Jun Chung Sang Jik Kwon Center for Nanotubes and Nanostructured Composites Sungkyunkwan University Suwon Korea Technology Development 3 Corperate R&D Center Kiheung South Korea Technology Development 3 Corperate R&D Center Yongin Korea Department of Electronics Engineering Kyungwon University Seongnam Kyunggi-Do Korea
Photosensitive carbon nanotube (CNT) paste was synthesized with spin on glass (SOG) as inorganic binder. The field emission characteristics of this CNT paste was studied. CNT field emitter arrays (FEAs) was then fabri... 详细信息
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A novel sub-50 nm multi-bridge-channel MOSFET (MBCFET) with extremely high performance
A novel sub-50 nm multi-bridge-channel MOSFET (MBCFET) with ...
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Symposium on VLSI technology
作者: Sung-Young Lee Eun-Jung Yoon Sung-Min Kim Chang Woo Oh Ming Li Jeong-dong Choi Kyoung-Hwan Yeo Min-Sang Kim Hye-Jin Cho Sung-Hwan Kim dong-Won Kim donggun Park Kinam Kim Advanced Technology Development Team R&D Center Samsung Electronics Co. Yongin-City Kyungki-Do KOREA
We demonstrate highly manufacturable sub-50 nm MBCFET with the I/sub on/ of 4.26 mA/ /spl mu/m at V/sub dd/ = 1.2V, which is the best performance ever reported. This excellent performance of the MBCFET is resulted fro... 详细信息
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Transistor test structures for leakage current analysis of partial SOI
Transistor test structures for leakage current analysis of p...
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IEEE International Conference on Microelectronic Test Structures
作者: Kyoung Hwan Yeo Chang Woo Oh Sung-Min Kim Min-Sang Kim Sung-Young Lee Ming Li Hye-Jin Cho Eun-Jung Yoon Sung-Hwan Kim Jeong-dong Choe dong-Won Kim donggun Park Kinam Kim Advanced Technology Development Team R&D Center Samsung Electronics Company Limited Yongin si Gyeonggi South Korea
A new test structure to directly measure the junction leakage current between the channel and source/drain region is developed with partially-insulated structure. Si/SiGe epitaxial growth and selective SiGe etch proce... 详细信息
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Prospects of emerging new memory technologies
Prospects of emerging new memory technologies
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IEEE International Conference on Integrated Circuit design and technology (ICICdT)
作者: S.Y. Lee K. Kim Advanced Technology Development Semiconductor R&D Center Memory Division Samsung Electronics Company Limited Yongin si Gyeonggi South Korea
New types of memories with potentially ideal properties are topic of growing interest. Among the candidates, Ferroelectric rAM, Phase change rAM, and Magnetic rAM appear to be most promising for commercialization. In ... 详细信息
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