The effect of Co substitution on magnetocaloric effects and magnetic properties of La(Fe/sub 1-x-y/Co/sub x/Si/sub y/)/sub 13/ was described. X-ray diffraction and magnetization measurements were performed on the samp...
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The effect of Co substitution on magnetocaloric effects and magnetic properties of La(Fe/sub 1-x-y/Co/sub x/Si/sub y/)/sub 13/ was described. X-ray diffraction and magnetization measurements were performed on the sample. The samples exhibited itinerant-electron metamagnetic and ferromagnetic nature when x = 0.035, 0.065 and x = 0.05, 0.07 respectively. Co substitution gave rise to varying intrinsic change of magnetic entropy.
We have made great progress for mass production of a highly reliable 1.6V, 0.18 mum 1T1C FrAM embedded smart card. For mass production, ourdevice has to pass standard qualification tests on the package level. These c...
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We have made great progress for mass production of a highly reliable 1.6V, 0.18 mum 1T1C FrAM embedded smart card. For mass production, ourdevice has to pass standard qualification tests on the package level. These contain the infant life test (ILT), the high temperature operating life (HTOL), the endurance and the high temperature storage (HTS) test. Problems in the PZT capacitor integration scheme led to single bit fails during the standard ILT, HTOL and HTS tests. The causes are broken EBL and TE/PZT interface damage, which were removed by the modification of top electrode deposition and capacitor etching processes and by a new capping oxide deposition scheme
For the first time, 75% and 7% drive current improvement is simultaneously achieved in both N/PMOS by adopting ultimate spacer process (USP) with a single stress liner. High out-of-plane stress in the channel accounts...
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For the first time, 75% and 7% drive current improvement is simultaneously achieved in both N/PMOS by adopting ultimate spacer process (USP) with a single stress liner. High out-of-plane stress in the channel accounts for the simultaneously enhanceddrive current in N/PMOS. A 15% speed enhancement without compromising yield and product qualification in field-programmable gate arrays (FPGA) confirms immediate manufacturing feasibility of USP. This process provides a unique approach to significantly enhance device performance for 65nm CMOS technology and beyond. Extreme current increase of 25% in NMOS and 35% in PMOS can be achieved by applying additional strain enhancement methods
For the first time, S-rCAT (sphere-shaped-recess-channel-array transistor) technology has been successfully developed in a 2Gb density drAM with 70nm feature size. It is a modified structure of the rCAT (recess-channe...
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For the first time, S-rCAT (sphere-shaped-recess-channel-array transistor) technology has been successfully developed in a 2Gb density drAM with 70nm feature size. It is a modified structure of the rCAT (recess-channel-array transistor) and shows an excellent scalability of recessed-channel structure to sub-50nm feature size. The S-rCAT demonstrated superior characteristics in dIBL, subthreshold swing (SW), body effect, junction leakage current anddata retention time, comparing to the rCAT structure, in this paper, S-rCAT is proved to be the most promising drAM array transistor suitable for sub-50nm and mobile applications.
The relationship between impurity species included in regioregular poly(3-hexylthiophene) (P3HT) and the field effect transistors (FETs) property was investigated. P3HT synthesized by the rieke method contained only Z...
The relationship between impurity species included in regioregular poly(3-hexylthiophene) (P3HT) and the field effect transistors (FETs) property was investigated. P3HT synthesized by the rieke method contained only Zn, Ni and Br (free halogen) as impurities. Several kinds of P3HT with different purities by using purification techniques were prepared, and those P3HT-FETs properties were estimated. As a result, it is revealed that the free halogen is effective dopant to increase the FET mobility, and the removal of the catalyst metal (Zn and Ni) is also effective to decrease off-current.
We demonstrate high power operation of 200 mW at 70°C of 660-nm GaInP/AlGaInP ridge laserdiodes. Very narrow vertical beam divergence angle of 15.3° was achieved by employing a dry etching process and a two...
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We demonstrate high power operation of 200 mW at 70°C of 660-nm GaInP/AlGaInP ridge laserdiodes. Very narrow vertical beam divergence angle of 15.3° was achieved by employing a dry etching process and a two-step n-clad layerdesign.
This paperreports on a new PC mouse device by the use of the micromachined thermal flow sensors. The proposed mouse contains two small flow sensors mounted in two 10-mm-diameter and 3-mm-depth spaces in order to meas...
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This paperreports on a new PC mouse device by the use of the micromachined thermal flow sensors. The proposed mouse contains two small flow sensors mounted in two 10-mm-diameter and 3-mm-depth spaces in order to measure its velocity anddirection. When the mouse is moved in a direction, air flow is generated because the air tends to stay where it is. Our sensors can detect the wide range flow speed which enables the mouse speedranging from hundreds to one mm/s. A ball-type mouse is as big as one's palm because the mouse needs sufficient weight of a rubber ball to provide friction force. An optical mouse is smaller but it needs a patterned indented surface and sufficient light reflection from the surface of the desktop. The present flow mouse is as small as an optical one and it can work even on a smooth transparent glass. The results indicate that displacement can be measured with in an errorratio +/$2% at 10, 50,100 and 150 mm/s. This errorratio is good enough for this application
This article demonstrates results and experiences gained in the area of multilayer internetworking, with emphasis on bandwidth on-demand provisioning as well as resource andrestoration management. Behavioral characte...
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This article demonstrates results and experiences gained in the area of multilayer internetworking, with emphasis on bandwidth on-demand provisioning as well as resource andrestoration management. Behavioral characteristics and numerical results were obtained from a management system prototype implemented and tested in an appropriately adapted commercial WdM environment enhanced with multivendor gigabit IP routers. The management solution, the testbed environment, and a representative evaluation scenario are presented as a means of explaining in detail the results that finally allow a global system assessment.
The uniformity of the deposited film in the sputtering process is a key issue that determines the quality of the device and the fabrication yield. Geometric parameters as well as operating conditions are considered as...
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The uniformity of the deposited film in the sputtering process is a key issue that determines the quality of the device and the fabrication yield. Geometric parameters as well as operating conditions are considered as two major categories that are responsible for the film uniformity. The parameters of reactor geometries in the first category include the dimensions and size of the reactor, the distance between target and substrate, and locations for the inlet gas and exhaust gas. The second category, (operating conditions), includes the factors such as gas flow rate, operating pressure, types of energy provided, quantities of energy given. Therefore, it is a tedious and costly procedure to fine-tune these variables to achieve the optimal film uniformity. In this study, the usage of CFd (computational fluiddynamics) techniques accompanied with the dOE (design of experiment) and ANN (artificial neural network, back propagation feed-forward neural net) methods is implemented to help locate the best parameters for plasma sputtering deposition process. In conclusion, the most significant factor that affects the film uniformity anddeposition rate is voltage of the target; the second most significant factor is operation pressure, while the flow rate of input gas has the least effect. With respect to the effect of target voltage, it is found that this variable has a much greater influence on the deposition rate than its effect to the film uniformity.
We have investigated carbon nanotube (CNT)-field emitter array (FEA) for the application of lighting system like back light unit (BLU) in liquid crystal display (LCd). The photosensitive CNT paste was synthesized by m...
We have investigated carbon nanotube (CNT)-field emitter array (FEA) for the application of lighting system like back light unit (BLU) in liquid crystal display (LCd). The photosensitive CNT paste was synthesized by mixing of multiwalled carbon nanotubes (MWNTs), spin on glass (SOG), organic vehicle, photosensitive monomers, photosensitive oligomers and photo initiators. Uniform CNT paste films were obtained by using backside exposure technique and emission properties of CNT paste were evaluateddepending on variation in SOG content and firing conditions. Then we prepared line patterned CNT-FEAs using photolithography and measured their I–V characteristics and brightness.
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