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Optical Fiber Communication (OFC) Conference

作者： T. Sugihara K. Shimomura K. Shimizu Y. Kobayashi K. Matsuoka M. Hashimoto T. Hashimoto T. Hirai S. Matsumoto T. Ohira M. Takabayashi K. Yoshiara T. Mizuochi Information Technology Research and Development Center Kamakura Japan Information Technology R&D Center Mitsubishi Electric Corporation Ofuna Kamakura Japan Kamakura Works Japan Advanced Technology R&D Center Japan

ISBN: (纸本)1557527008

The automatic control of a tunable dispersion equalizer by means of a bit error monitor was demonstrated. The tunable dispersion equalizer developed consists of a chirped fiber grating and divided thin film heaters. From the tests of the step response and the automatic dEQ control, we confirmed that the tunable dispersion equalizer based on the grating and heaters is suitable for adaptive dispersion compensation of dispersion variations caused by slowly varying environmental conditions with a fluctuation rate of several minutes or more.

关键词： Equalizers Automatic control Error correction Computerized monitoring Chirp Optical fiber testing Fiber gratings Transistors Automatic testing Temperature control

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40th EASd Annual Meeting of the European Association for the Study of diabetes : Munich, Germany, 5-9 September 2004

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diabetologia 2004年第SUPPL 1期47卷 A1-A464页

作者： Veitenhansl, M. Stegner, K. Hierl, F.-X. dieterle, C. Feldmeier, H. Gutt, B. Landgraf, r. Garrow, A. P. Vileikyte, L. Findlow, A. Waterman, C. Boulton, A. J. M. Shankhdhar, K. Shankhdhar, L. Shankhdhar, U. Petrova, N. L. Foster, A. V. M. Edmonds, M. E. Ferraresi, r. Caravaggi, C. de Giglio, r. Cavaiani, P. Pogliaghi, I. Sommariva, E. Katz, I. A. Harlan, A. Miranda-Palma, B. Prieto-Sanchez, L. Armstrong, d. G. Bowker, J. H. Mizel, M. S. Cernea, S. Wohlgelernter, J. Kidron, M. Modi, P. raz, I. Arbit, E. Nosek, L. Kapitza, C. Beckett, P. Gelfand, r. Goldberg, M. Heise, T. Testa, M. A. Turner, r. r. Hayes, J. F. Scranton, r. E. Simonson, d. C. Yang, Y.-W. Hsu, Y.-J. Naujok, O. Francini, F. Jörns, A. Tiedge, M. Lenzen, S. Abdel-Wahab, Y. H. A. Marenah, L. Orr, d. F. Shaw, C. Flatt, P. r. Chokkalingam, K. Mansell, P. I. Clausen, P. Ekbom, P. damm, P. Feldt-rasmussen, U. Nielsen, B. Mathiesen, E. r. Feldt-rasmussen, B. dewan, S. da Silva, N. Ternan, P. Mc Leong, K. S. Wilding, J. P. H. Asatiani, N. Kurashvili, r. dundua, M. Shelestova, E. Pagava, K. ramazashvili, M. Hod, M. Smirnov, S. Petersen, J. L. A. Justesen, T. I. ringholm Nielsen, L. Müller, C. Højlund, K. Wensaas, A. Kase, E. T. Aas, V. rustan, A. C. Thoresen, G. H. Levin, K. Beck-Nielsen, H. Gaster, M. Im, S.-S. Kang, S.-Y. Kim, S.-Y. Ahn, Y.-H. Lihn, A. S. Schmoll, d. Werner, T. Kienitz, A. Meyer, M. Barthel, A. Ailett, F. Sutherland, C. Walther, r. Grempler, r. Sasson, S. reich, r. Tenenbaum, T. Alpert, E. Anfossi, G. russo, I. Traversa, M. Massucco, P. Mattiello, L. doronzo, G. Trovati, M. Lally, S. Tan, C. Y. Owens, d. Tomkin, G. H. Porchay, I. Péan, F. Bellili, N. Betoulle, d. Balkau, B. Tichet, J. Marre, M. Fumeron, F. Chatellier, G. Alhenc-Gelas, F. Nichols, G. A. Brown, J. B. Hayes, r. P. Bowman, L. drexel, H. Saely, C. H. Marte, T. Benzer, W. Langer, P. Hoefle, G. Moll, W. Aczel, S. Karagiannis, E. Lübben, G. Urquhart, r. Edwards, G. Bruce, S. Howlett, H. S. C. Cugnardey, N. Turner, K. C. Park, J.-S. Fiedorek, F. T. Avogaro, A. Gallo, A. Pinton, P. riz Innenstadt Klinikum der Universität München München Germany Diabetes Center Medizinische Klinik München Germany Medicine The University of Manchester Manchester UK Medicine University of Manchester Manchester UK Podiatry The University of Salford Manchester UK Department of Medicine/Division of Endocrinology Diabetes and Metabolism University of Miami Miami USA Department of Medicine Manchester Royal Infirmary Manchester UK Podiatry L.K.Diabetes Centre Lucknow India Diabetology L.K.Diabetes Centre Lucknow India Medical Nutrition L.K.Diabetes Centre Lucknow India Diabetic Foot Clinic King’s College Hospital London UK Haemodinamic Department - Cardiovascular Division Magenta Hospital Milan Italy Center for the Study and Treatment of Diabetic Foot Pathology Abbiategrasso Hospital Milan Italy Center for the Study and Treatment of Diabetic Foot Pathology Abbiategrasso Hospital Abbiategrasso Italy Department of Orthopedics University of Miami Miami USA Department of Surgery Southern Arizona Veterans Affairs Medical Center Tucson USA Surgery Southern Arizona VA Medical Center Tucson USA Podiatric Medicine and Surgery Rosalind Franklin University School of Medicine and Science North Chicago USA Diabetes Department Center of Diabetes Nutrition and Metabolic Disorders Clug-Napoca Romania Diabetes Unit Hadassah University Hospital Jerusalem Israel Diabetes Unit Hadassah Hebrew University Hospital Jerusalem Israel Research Department Generex Biotechnology Corporation Toronto Canada Hadassah Hebrew University Hospital Jerusalem Israel Medical Research Emisphere Technologies Inc. New York USA Profil Institut fuer Stoffwechselforschung GmbH Neuss Germany Profil Institute for Metabolic Research Neuss Germany Management Profil Inst. für Stoffwechselforschung Düsseldorf Germany Institute for Metabolic Research Profil Neuss Germany Biostatistics Harvard School of Public Health Boston USA Clinical Research Phase V Technologies Wellesley Hills US

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A novel bit line-SToFM (Spacerless top-flat mask)-technology for 90 nm drAM generation and beyond

A novel bit line-SToFM (Spacerless top-flat mask)-technology...

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Symposium on VLSI technology

作者： B.J. Park Y.S. Hwang Y.N. Hwang J.W. Lee K.H. Lee K.T. Jeong H.S. Jeong Y.J. Park Kinam Kim Technology Development Semiconductor R&D Center Samsung Electronics Company Limited Yongin si Kyunggi South Korea

ISBN: (纸本)078037312X

A novel bit line technology for self-aligned storage node contact has been developed to overcome the issues related with downscaling of COB stack drAM cells for the 90 nm drAM technology node and beyond. In this new scheme, both ILd gap fill tolerance and SAC etching selectivity of SiO/sub 2/ to Si/sub 3/N/sub 4/ are significantly enhanced because there is no need to form Si/sub 3/N/sub 4/ spacer around the bit-line and because of the better profile of top mask Si/sub 3/N/sub 4/. Furthermore, compared to the conventional scheme, the novel bit line has the advantages of device performance such as refresh time and speed because the parasitic bit line capacitance is decreased by as much as 25%. The new bit line technology has been developed and verified with a 0.12 /spl mu/m 512 Mb drAM product. The results obtained from a 0.12 /spl mu/m drAM technology confirm that this novel bit line scheme is beneficial for the 90 nm technology node and beyond.

关键词： Space technology random access memory Etching Parasitic capacitance Filling research and development Capacitors High-K gate dielectrics Shape SdrAM

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Novel drAM cell transistor with asymmetric source and drain junction profiles improving data retention characteristics

Novel DRAM cell transistor with asymmetric source and drain ...

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Symposium on VLSI technology

作者： S.J. Ahn G.T. Jung C.H. Cho S.H. Shin J.Y. Lee J.G. Lee H.S. Jeong Kinam Kim Technology Development Semiconductor R&D Center Samsung Electronics Company Limited Yongin si Kyunggi South Korea

ISBN: (纸本)078037312X

A novel drAM cell transistor with an asymmetric source and drain structure is proposed, for the first time, to realize reliable high density drAM below 0.12 /spl mu/m. The new cell structure could provide the optimized source and drain junction profiles independently. The junction profile at the storage node (SN) was designed to reduce electric field to minimize junction leakage current and thereby improving data retention time. On the other hand, the junction profile at the bit-line direct contact node (dC) was designed to suppress short channel effects of a cell transistor. It is considered to be highly scalable for device scaling and to solve fine printing and precise alignment requirements. The validity of the approach was directly confirmed by improvement in the refresh times of 512 Mb drAM which was fabricated with 0.12 /spl mu/m drAM technology.

关键词： random access memory Leakage current Tin Boron Subthreshold current doping profiles research and development Printing degradation Threshold voltage

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The influence of IMd bake process on buried channel PMOS hot carrier reliability of advanced drAM

The influence of IMD bake process on buried channel PMOS hot...

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Annual International Symposium on reliability Physics

作者： S.J. Ahn J.K. Lee G.T. Jung C.H. Cho Y.S. Hwang d.W. Shin H.S. Jeong Kinam Kim Technology Development Semiconductor R&D Center Samsung Electronics Company Limited Yongin si Gyeonggi South Korea

We investigated the influence of the SOG deposition with two kinds of curing process on the hot carrier reliability of buried channel (BC) PMOSFET. It was found that the vacuum bake induced the effective negative char... 详细信息

ISBN: (纸本)0780373529

关键词： random access memory Stress MOSFET circuits Hot carriers Thermal degradation Acceleration dielectrics Temperature Etching Oxidation

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Implementation of wireless MPEG2 transmission system using IEEE 802.11b PHY

Implementation of wireless MPEG2 transmission system using I...

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IEEE Asia-Pacific Conference on Circuits and Systems

作者： Y. Ohtani H. Nakaoka T. Tomaru K. Maruyama T. Chiba T. Onoye L. Shirakawa Department of Information Systems Engineering Osaka University Osaka Japan System Technology Development Center Corporate R&D Group Sharp Corporation Tenri-shi Japan

A new error correction block based hybrid ArQ protocol, in which PHY layer packets are composed of multiple error correction blocks, is devised together with a retransmission control scheme constructed on the basis of these error correction blocks. A wireless video transmission system using IEEE802.11b PHY is also described, which has been developed with the use of a medium access control (MAC) LSI to perform the proposed protocol.

关键词： Physical layer Media Access Protocol Error correction Throughput Bit error rate Automatic repeat request Large scale integration Access protocols Wireless LAN Streaming media

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Evolutionary feature design for object recognition with hierarchical networks

Evolutionary feature design for object recognition with hier...

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International Conference on Neural Information Processing

作者： G. Schneider H. Wersing B. Sendhoff E. Korner Honda R&D Europe (Deutschland) GmbH Future Technology Research Offenbach/Main Germany Future Technology Research Honda Research and Development Europe Deutschland GmbH Offenbach am Main Germany

A major problem in designing neural vision models is the large dimensionality of the search space for defining the needed networks. By using hierarchical vision models inspired by biology we narrow the space of possible architectures. We perform evolutionary optimization of remaining critical network parts e.g. the combination features, which are up to now mostly subject to manually determination. We show that the evolutionary approach leads to an optimized recognition system with respect to speed and performance, which is highly competitive with other state of the art systems.

关键词： Object recognition Machine vision Evolution (biology) Biological system modeling Neurons Space technology design optimization Biological neural networks Optimization methods research and development

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A novel robust TiN/AHO/TiN capacitor and CoSi/sub 2/ cell pad structure for 70nm stand-alone and embedded drAM technology and beyond

A novel robust TiN/AHO/TiN capacitor and CoSi/sub 2/ cell pa...

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International Electron devices Meeting (IEdM)

作者： J.M. Park Y.S. Hwang d.S. Hwang H.K. Hwang S.H. Lee G.Y. Kim M.Y. Jeong B.J. Park S.E. Kim M.H. Cho d.I. Kim J.-H. Chung I.S. Park C.-Y. Yoo J.H. Lee B.Y. Nam Y.r. Park C.-S. Kim M.-C. Sun J.-H. Ku S. Choi H.S. Kim Y.G. Park Kinam Kim Advanced Technology Development Yongin si South Korea Advanced Technology Development Process Development Semiconductor Research and Development Division Samsung Electronics Company Limited Yongin si Gyeonggi South Korea Process Development Semiconductor R&D Div. Samsung Electronics Co. Kiheung-Eup Yongin-City Kyunggi-Do Korea

For the first time, a novel robust (square-shape cylinder type) TiN/AHO (Al/sub 2/O/sub 3/-HfO/sub 2/)/TiN capacitor with Co-silicide on landing cell pad suitable for both stand-alone and embedded drAMs are successfully developed with 88nm (pitch 176nm) feature size, which is the smallest feature size ever reported in drAM technology, using ArF lithography for aiming 70nm stand-alone and embedded drAM technology. The capacitor with Toxeq of 1.5nm and leakage current of less than 1 fA/cell is achieved. The cell contact resistance is greatly improved by using Co-silicidation on landing cell pad and metal storage node contact plug, which results in high performance.

关键词： Tin robustness Atherosclerosis random access memory Contact resistance Plugs MIM capacitors Leakage current Capacitance robust stability

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Process integration of Cu metallization and ultra low k (k=2.2)

Process integration of Cu metallization and ultra low k (k=2...

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IEEE International Conference on Interconnect technology

作者： Chuan-cheng Cheng Wei-jen Hsia J. Pallinti S. Neumann J. Koh P. Li Mei Zhu M. Lu Hao Cui T. Fujimoto W. Catabay P. Wright Process Technology Department. Process R&D LSI Logic Corporation Santa Clara CA USA Process Module Development and Advance Research LSI Logic Corporation Gresham OR USA

The first process integration of Cu metallization and next generation CVd ultra low k (Trikon Orion ULK, k=2.2) is presented. The current process condition for a 130 nm node Cu/lowk (k=2.9) process is applied to Cu/ULK and found to be suitable without major modifications. The comparison of post CMP measurement (dishing, erosion, peeling, and scratch) show no significant variation between control (k=2.9) and ULK. The electrical data indicates the successful integration of Cu and ULK. The interconnect capacitance is expected to reduce 20% at 0.1 /spl mu/m technology node using the ULK film.

关键词： Metallization Etching Silicon carbide Chemistry Large scale integration Logic delay dielectric materials dielectric constant Inspection

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Effects of nitrogen in HfSiON gate dielectric on the electrical and thermal characteristics

Effects of nitrogen in HfSiON gate dielectric on the electri...

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International Electron devices Meeting (IEdM)

作者： M. Koyama A. Kaneko T. Ino M. Koike Y. Kamata r. Iijima Y. Kamimuta A. Takashima M. Suzuki C. Hongo S. Inumiya M. Takayanagi A. Nishiyama Advanced LSI Technology Laboratory Advanced LSI Technology Laboratory Toshiba Corporation Yokohama Japan Environmental Engineering and Analysis Center R&D Center Toshiba Corporation Yokohama Japan Environmental Engineering and Analysis Center R&D Center Toshiba Corporation Process & Manufacturing Engineering Center SoC Research & Development Center Semiconductor Company Toshiba Corporation Yokohama Japan SoC Research Development Center Semiconductor Company Toshiba Corporation Yokohama Japan

The effects of the nitrogen in the HfSiON gate dielectric on the electrical and thermal properties of the dielectric were investigated. It is clearly demonstrated that nitrogen enhances the dielectric constant of silicates. High dielectric constants of the HfSiON are maintained and boron penetration is substantially suppressed in the HfSiON during high temperature annealing. These properties are ascribed to the homogeneity of the bond structure in the film containing nitrogen through high temperature annealing.

关键词： Nitrogen dielectric constant Temperature Bonding Annealing High-K gate dielectrics Thermal stability Polarization Boron High K dielectric materials

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