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The influence of IMd bake process on buried channel PMOS hot carrier reliability of advanced drAM

The influence of IMD bake process on buried channel PMOS hot...

引用

Annual International Symposium on reliability Physics

作者： S.J. Ahn J.K. Lee G.T. Jung C.H. Cho Y.S. Hwang d.W. Shin H.S. Jeong Kinam Kim Technology Development Semiconductor R&D Center Samsung Electronics Company Limited Yongin si Gyeonggi South Korea

We investigated the influence of the SOG deposition with two kinds of curing process on the hot carrier reliability of buried channel (BC) PMOSFET. It was found that the vacuum bake induced the effective negative char... 详细信息

ISBN: (纸本)0780373529

关键词： random access memory Stress MOSFET circuits Hot carriers Thermal degradation Acceleration dielectrics Temperature Etching Oxidation

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Implementation of wireless MPEG2 transmission system using IEEE 802.11b PHY

Implementation of wireless MPEG2 transmission system using I...

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IEEE Asia-Pacific Conference on Circuits and Systems

作者： Y. Ohtani H. Nakaoka T. Tomaru K. Maruyama T. Chiba T. Onoye L. Shirakawa Department of Information Systems Engineering Osaka University Osaka Japan System Technology Development Center Corporate R&D Group Sharp Corporation Tenri-shi Japan

A new error correction block based hybrid ArQ protocol, in which PHY layer packets are composed of multiple error correction blocks, is devised together with a retransmission control scheme constructed on the basis of these error correction blocks. A wireless video transmission system using IEEE802.11b PHY is also described, which has been developed with the use of a medium access control (MAC) LSI to perform the proposed protocol.

关键词： Physical layer Media Access Protocol Error correction Throughput Bit error rate Automatic repeat request Large scale integration Access protocols Wireless LAN Streaming media

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Evolutionary feature design for object recognition with hierarchical networks

Evolutionary feature design for object recognition with hier...

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International Conference on Neural Information Processing

作者： G. Schneider H. Wersing B. Sendhoff E. Korner Honda R&D Europe (Deutschland) GmbH Future Technology Research Offenbach/Main Germany Future Technology Research Honda Research and Development Europe Deutschland GmbH Offenbach am Main Germany

A major problem in designing neural vision models is the large dimensionality of the search space for defining the needed networks. By using hierarchical vision models inspired by biology we narrow the space of possible architectures. We perform evolutionary optimization of remaining critical network parts e.g. the combination features, which are up to now mostly subject to manually determination. We show that the evolutionary approach leads to an optimized recognition system with respect to speed and performance, which is highly competitive with other state of the art systems.

关键词： Object recognition Machine vision Evolution (biology) Biological system modeling Neurons Space technology design optimization Biological neural networks Optimization methods research and development

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A novel robust TiN/AHO/TiN capacitor and CoSi/sub 2/ cell pad structure for 70nm stand-alone and embedded drAM technology and beyond

A novel robust TiN/AHO/TiN capacitor and CoSi/sub 2/ cell pa...

引用

International Electron devices Meeting (IEdM)

作者： J.M. Park Y.S. Hwang d.S. Hwang H.K. Hwang S.H. Lee G.Y. Kim M.Y. Jeong B.J. Park S.E. Kim M.H. Cho d.I. Kim J.-H. Chung I.S. Park C.-Y. Yoo J.H. Lee B.Y. Nam Y.r. Park C.-S. Kim M.-C. Sun J.-H. Ku S. Choi H.S. Kim Y.G. Park Kinam Kim Advanced Technology Development Yongin si South Korea Advanced Technology Development Process Development Semiconductor Research and Development Division Samsung Electronics Company Limited Yongin si Gyeonggi South Korea Process Development Semiconductor R&D Div. Samsung Electronics Co. Kiheung-Eup Yongin-City Kyunggi-Do Korea

For the first time, a novel robust (square-shape cylinder type) TiN/AHO (Al/sub 2/O/sub 3/-HfO/sub 2/)/TiN capacitor with Co-silicide on landing cell pad suitable for both stand-alone and embedded drAMs are successfully developed with 88nm (pitch 176nm) feature size, which is the smallest feature size ever reported in drAM technology, using ArF lithography for aiming 70nm stand-alone and embedded drAM technology. The capacitor with Toxeq of 1.5nm and leakage current of less than 1 fA/cell is achieved. The cell contact resistance is greatly improved by using Co-silicidation on landing cell pad and metal storage node contact plug, which results in high performance.

关键词： Tin robustness Atherosclerosis random access memory Contact resistance Plugs MIM capacitors Leakage current Capacitance robust stability

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Process integration of Cu metallization and ultra low k (k=2.2)

Process integration of Cu metallization and ultra low k (k=2...

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IEEE International Conference on Interconnect technology

作者： Chuan-cheng Cheng Wei-jen Hsia J. Pallinti S. Neumann J. Koh P. Li Mei Zhu M. Lu Hao Cui T. Fujimoto W. Catabay P. Wright Process Technology Department. Process R&D LSI Logic Corporation Santa Clara CA USA Process Module Development and Advance Research LSI Logic Corporation Gresham OR USA

The first process integration of Cu metallization and next generation CVd ultra low k (Trikon Orion ULK, k=2.2) is presented. The current process condition for a 130 nm node Cu/lowk (k=2.9) process is applied to Cu/ULK and found to be suitable without major modifications. The comparison of post CMP measurement (dishing, erosion, peeling, and scratch) show no significant variation between control (k=2.9) and ULK. The electrical data indicates the successful integration of Cu and ULK. The interconnect capacitance is expected to reduce 20% at 0.1 /spl mu/m technology node using the ULK film.

关键词： Metallization Etching Silicon carbide Chemistry Large scale integration Logic delay dielectric materials dielectric constant Inspection

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Effects of nitrogen in HfSiON gate dielectric on the electrical and thermal characteristics

Effects of nitrogen in HfSiON gate dielectric on the electri...

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International Electron devices Meeting (IEdM)

作者： M. Koyama A. Kaneko T. Ino M. Koike Y. Kamata r. Iijima Y. Kamimuta A. Takashima M. Suzuki C. Hongo S. Inumiya M. Takayanagi A. Nishiyama Advanced LSI Technology Laboratory Advanced LSI Technology Laboratory Toshiba Corporation Yokohama Japan Environmental Engineering and Analysis Center R&D Center Toshiba Corporation Yokohama Japan Environmental Engineering and Analysis Center R&D Center Toshiba Corporation Process & Manufacturing Engineering Center SoC Research & Development Center Semiconductor Company Toshiba Corporation Yokohama Japan SoC Research Development Center Semiconductor Company Toshiba Corporation Yokohama Japan

The effects of the nitrogen in the HfSiON gate dielectric on the electrical and thermal properties of the dielectric were investigated. It is clearly demonstrated that nitrogen enhances the dielectric constant of silicates. High dielectric constants of the HfSiON are maintained and boron penetration is substantially suppressed in the HfSiON during high temperature annealing. These properties are ascribed to the homogeneity of the bond structure in the film containing nitrogen through high temperature annealing.

关键词： Nitrogen dielectric constant Temperature Bonding Annealing High-K gate dielectrics Thermal stability Polarization Boron High K dielectric materials

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Modeling discrete event systems with faults using a rules based modeling formalism

Modeling discrete event systems with faults using a rules ba...

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IEEE Conference on decision and Control

作者： Z. Huang V. Chandra S. Jiang r. Kumar Electrical & Computer Engineering University of Kentucky Lexington KY USA Department of Technology Eastern Kentucky University Richmond KY USA Department of Development GM R&D and Planning Warren MI USA Electrical & Computer Engineering Iowa State University Ames IA USA

In this paper we present a methodology which makes the task of modeling failure prone discrete event systems (dESs) considerably less cumbersome, less error prone, and more user-friendly. In order to model failures, we augment the signals set of the rules based formalism proposed by the co-authors of this paper, to include binary valued fault signals, the values representing either a non-faulty or a faulty state of a certain failure type. The rules based modeling formalism is further extended to model real-time systems, and we apply it to model delay-faults of the system as well. The model of a failure prone dES in the rules based can automatically be converted into an equivalent (timed)-automaton model for the analysis in an automaton model framework.

关键词： discrete event systems Automata research and development real time systems delay systems Failure analysis Fault diagnosis

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Evaluation of the secondary electron blue in x-ray lithography by using the pattern replication technique on the mask

Evaluation of the secondary electron blue in x-ray lithograp...

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International Conference on Microprocesses and Nanotechnology

作者： K. Kise H. Watanabe K. Itoga H. Yabe H. Sumitani M. Amemiya Advanced Technology Research and Development Center Mitsubishi Electric Corporation Limited Amagasaki Hyogo Japan Mitsubishi Denki Kabushiki Kaisha Chiyoda-ku Tokyo JP Adv. Technol. R&D Center Mitsubishi Electr. Corp. Hyogo Japan

Two factors such as the secondary electron blur and Fresnel-Kirchhoff diffraction limit the resolution in the x-ray lithography. In Br resist, the suppression of the secondary electron blur was previously reported. The 30 nm isolated pattern was demonstrated using monochromatic x-ray of 8 A by the 'shadowing technique', where contact exposure method with high contrast mask was used. However, the resolution at the shorter wavelength less than 8 A wasn't sufficiently demonstrated. Here, we have developed the pattern replication technique on the x-ray mask and study the resolution at the x-ray wavelength less than 8 A. This technique is sufficient to evaluate the resolution because the exposure at smaller gap is available, and the stepper vibration can be ignored. A schematic diagram of the pattern replication technique on the mask is shown. Polymer film is coated on the x-ray mask, which correspond to the proximity gap, and positive resist (ZEP-520) of 70 nm thickness is coated on the polymer film. The x-ray is irradiated from the back etching area. The resist on the x-ray mask is developed, where the polymer layer is insoluble to the developer. The SEM photographs of 50 nm L&S patterns in which the kapton filter of 0, 15 and 50 μm thickness is inserted in the beam line are shown. Absorption energy in the resist becomes shorter as the filter thickness is increased. The absorbed energy of 4.4 A corresponds to the absorption edge of Cl element of 15 wt% in the resist. The shorter x-ray wavelength degrades the quality of 50 nm L&S pattern even though the secondary electron blur at the x-ray wavelength less than Cl absorption edge is suppressed due to the addition of Cl element. The normalized deposition energy distributions, where x-rays of the infinitely fine line are irradiated, are shown. The energy spread becomes broader as the x-ray wavelength becomes shorter. This result shows that the secondary electron blur including the x-ray wavelength of 6 A doesn't limit the

关键词： Electrons X-ray lithography resists Electromagnetic wave absorption Polymer films Filters X-ray diffraction Shadow mapping Etching degradation

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催化裂化优化回顾:催化剂对生产链的影响

催化裂化优化回顾:催化剂对生产链的影响

引用

第十七届世界石油大会

作者： H.S.Cerqueira r.rawet A.F.Costa 卢人严 PETROBRAS R&D Center (CENPES)/Downstream Research Development and Basic Engineering/FCC Technology Rio de Janeiro Brazil.

本文给出了近30年来巴西石油市场的有关资料，并与世界的情况作比较.虽然催化裂化加工能力逐年增加，但所加工原料的质量不断劣化.催化裂化催化剂技术的进步对于适应市场需求的生产链而言，是十分重要的. 催化剂技术的进步推动着新... 详细信息

本文给出了近30年来巴西石油市场的有关资料，并与世界的情况作比较.虽然催化裂化加工能力逐年增加，但所加工原料的质量不断劣化.催化裂化催化剂技术的进步对于适应市场需求的生产链而言，是十分重要的. 催化剂技术的进步推动着新型评价方法的发展.而催化剂评价方法的改进和助剂的开发在催化裂化技术进步中也有重要的作用. 本文提供的数据清楚地表明，在裂化较重原料、降低金属负面影响、改善产品选择性以适应市场需求方面，催化裂化催化剂(以及与工艺进步的结合)起着最根本的作用.

关键词：催化裂化催化裂化催化剂评价方法生产链影响

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A strategy for long data retention time of 512 Mb drAM with 0.12 /spl mu/m design rule

A strategy for long data retention time of 512 Mb DRAM with ...

引用

Symposium on VLSI technology

作者： H.S. Uh J.K. Lee Y.S. Ahn S.H. Lee S.H. Hong J.W. Lee G.H. Koh G.T. Jeong T.Y. Chung Kinam Kim Technology Development Team Semiconductor R&D Center Yongin-City Kyunggi Korea

ISBN: (纸本)4891140127

data retention time has been investigated for mass-produced 512 Mb drAMs with 0.12 /spl mu/m design rules. Cell junction leakage components were analyzed for the first time using a test structure. It was found that process-induced trap density and electric field at the storage node (SN) junction should be reduced to control leakage current and thus data retention time. Moreover, we propose a novel cell transistor using localized channel and field implantation (LOCFI) which greatly suppresses the ion implantation damage and reduces the electric field at the same time. Finally, data retention time has been improved by 3/spl sim/4 times due to the LOCFI cell transistor with optimized process conditions.

关键词： random access memory Silicon compounds Testing Etching Leakage current research and development Electron traps Ion implantation Power generation Energy consumption

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