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Machine learning virtual SEM metrology and SEM-based OPC model methodology

JOUrNAL OF MICrO-NANOPATTErNING MATErIALS ANd METrOLOGY-JM3 2021年第4期20卷

作者： Yan, Yan Shi, Xuelong Zhou, Tao Xu, Bowen Li, Chen Yuan, Wei Gao, Ying Pan, Bingyang diao, Xuling Chen, Shoumian Zhao, Yuhang Shanghai Integrated Circuits R&D Ctr Shanghai Peoples R China

Background: E-beam metrologies, both critical dimension scanning electron microscope metrology and defect scan metrology, have been playing a very critical role in gating patterning quality. SEM images can provide rich visual information for engineers to do qualitative and quantitative analyses. However, the low e-beam metrology tool throughput makes it impossible to obtain SEM images for larger area. Monte Carlo-based SEM image simulations or other SEM image simulations require postlithography or postetch pattern three-dimensional structures as prerequisite, and the simulation speed is not sufficiently fast for full chip implementation. Aim: We aim to develop machine learning SEM models with sufficient accuracy and speed for full chip application in semiconductor manufacturing environment. Approach: We have proposed a virtual SEM metrology solution based on U-Net neural network with physics-based feature maps as model input. With information in aerial image space encoded properly, SEM images of both postlithography and postetch can be predicted accurately enough for practical applications using our proposed virtual SEM metrology models. Equipped with GPUs, the machine learning-based SEM image models are fast enough to make it possible to realize full chip SEM generation from post-OPC data. results: Our machine learning SEM image models can predict SEM images with normalized cross correlation around 0.95 in reference to ground truth SEM images, each SEM image (512 x 512 in size) takes about 800 ms using single CPU, and the speed can be accelerated to about 10 ms with single GPU. Conclusions: Using U-Net structure and physics-based feature maps as model inputs, machine learning-based SEM image models can be developed. The models are sufficiently accurate and fast to find their applications in semiconductor manufacturing, and they can be used as independent model for OPC data verification or generate SEM images as reference for SEM defect scan metrology. (C) 2021 Soci

关键词： virtual SEM metrology machine learning deep convolutional neural network computational metrology

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Interstitial Alkali Metal Ions regulating the Phase distributions Enabling Efficient and Stable red Perovskite Light-Emitting diodes

IEEE ELECTRON DEVICE LETTERS

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IEEE ELECTrON dEVICE LETTErS 2024年第5期45卷 861-864页

作者： Wang, Yuanzhi Wang, Lin Shi, Xingyu Liu, Junchuan Liu, Zirui Wang, Sheng Chen, Tao Yang, Xuyong Shanghai Univ Minist Educ Key Lab Adv Display & Syst Applicat Shanghai 200072 Peoples R China Off Admiss & Career Serv Shanghai 200444 Peoples R China Shanghai Univ Shanghai Engn Res Ctr Integrated Circuits & Adv D Shanghai 201899 Peoples R China

Quasi-2d perovskites have attracted intensive attentions for applications in light-emitting diodes (LEds) due to their high exciton binding energy and good photostability. However, the wide phase distribution and inefficient energy transfer in quasi-2d perovskite are impeding the realization of efficient and stable pure red PeLEds. Herein, an alkali metal iodide, potassium iodide (KI) is employed to in situ regulate the growth kinetics of quasi-2d perovskite film with three spacer cations of butylammonium (BA(+)), 2-phenylethanamine (PEA(+)), 2-naphthylmethylammonium (NMA(+)) by diffusing into the interstitial sites of octahedral structures. The KI treatment can not only facilitate the radiative recombination efficiency by controlling the phase distributions of low-n and high-n phases to improve the exciton energy transfer, but also passivate the Pb dangling bonds and compensate iodine vacancies (V-I) effectively, which leading to the formation of smooth and dense film morphology. Based on the KI-treatment perovskite film, an efficient and color-stable pure-red PeLEd with a peak external quantum efficiency (EQE) of over 10% was achieved.

关键词： Perovskites Iodine compounds Scanning electron microscopy Light emitting diodes Energy exchange Lead Absorption Quasi-2d perovskite phase distribution potassium iodide energy transfer red light-emitting diodes

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Test Cost reduction for VLSI Adaptive Test With K-Nearest Neighbor Classification Algorithm

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IEEE TrANSACTIONS ON circuits ANd SYSTEMS II-EXPrESS BrIEFS 2024年第7期71卷 3508-3512页

作者： Song, Tai Huang, Zhengfeng Zhang, Li Hong, Qi Yang, Zhao Krstic, Milos Anhui Univ Sch Integrated Circuits Hefei Anhui 230601 Peoples R China Hefei Univ Technol Sch Microelect Hefei 230009 Anhui Peoples R China IHP Leibniz Inst Innovat Mikroelekt Syst Architectures D-15236 Frankfurt Oder Germany Univ Potsdam Inst Comp Sci D-14476 Potsdam Germany

Ensuring the impeccable quality of integrated circuits (ICs) is of utmost importance to the customers. However, the increasing scaling of advanced nanoscale circuits has resulted in also increased cost of tests. In order to optimize test cost without compromising IC quality, it is imperative to reduce test time. Addressing the issue of prolonged test duration, associated with conventional full-pattern tests approaches, this brief introduces a novel and efficient pattern selection method known as stepwise k-nearest neighbors (KNN). By harnessing the power of a classification model, this method selectively identifies and applies only the most potent patterns, that are likely to lead to test failures. This approach dramatically expedites the testing process, resulting in substantial time savings. Experimental results showcase an impressive 27% enhancement in the accuracy of the proposed approach compared to Support Vector Machine (SVM) techniques. This signifies the effectiveness and superiority of the presented method in enhancing both the efficiency and reliability of IC testing.

关键词： Testing Integrated circuits Costs Behavioral sciences Training Feature extraction Encoding VLSI test machine learning (ML) adaptive test circuit under test (CUT) automatic test pattern generation (ATPG)

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recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications

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Science China(Information Sciences) 2023年第10期66卷 84-104页

作者： Zhaohao ZHANG Guoliang TIAN Jiali HUO Fang ZHANG Qingzhu ZHANG Gaobo XU Zhenhua WU Yan CHENG Yan LIU Huaxiang YIN Integrated Circuit Advanced R&D Center Institute of Microelectronics of Chinese Academy of Sciences School of Integrated Circuits University of Chinese Academy of Sciences School of Microelectronics Xidian University Department of Electronics East China Normal University

Hafnium oxide-based ferroelectric field-effect-transistors(FeFET), which combine super-steep logical switching and low power non-volatile memory functions, have significant potential for post-Moore integrated circuit innovations with higher energy efficiency and larger integration scale. In this review, recent research into hafnium oxide-based ferroelectric(FE) films and different functional devices is presented,from fundamentals to applications. different technological challenges and state-of-the-art research and development efforts related to the physical understanding and performance optimization of FE films, advanced hafnium oxide-based device integration, and device applications in logic-in-memory and artificial synapses and neurons for neuromorphic computing are addressed.

关键词： ferroelectric FeFET hafnium oxide HZO logic-in-memory neuromorphic computing

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Sub-5-Å La2O3 In Situ dipole Technique for Large VFB Modulation With EOT reduction and Improved Interface for HKMG Technology

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IEEE TrANSACTIONS ON ELECTrON dEVICES 2024年第1期71卷 746-751页

作者： Wei, Yanzhao Yao, Jiaxin Zhang, Qingzhu Sang, Guanqiao Bao, Yunjiao Gao, Jianfeng Li, Junfeng Luo, Jun Yin, Huaxiang Chinese Acad Sci Inst Microelect Integrated Circuit Adv Proc R&D Ctr Beijing 100029 Peoples R China Chinese Acad Sci Inst Microelect State Key Lab Fabricat Technol forIntegrated Circu Beijing 100029 Peoples R China Univ Chinese Acad Sci Sch Integrated Circuits Beijing 100049 Peoples R China

In this article, an in situ La-dipole technique with atomic-scale atomic layer deposition (ALd) La2O3 in laminated high-k dielectric stacks is presented, where the large flat-band voltage (V-FB) modulation range is observed. Meanwhile, the lower equivalent oxide thickness (EOT) and improvements in other electrical properties are obtained. With the in situ 4.6 & Aring;La2O3 under HfO2, a 710 mV V-FB negative modulation range and a 0.15-nm EOT reduction are obtained. As for the gate leakage, more than two orders of magnitude decreasing under the same overdrive bias-voltage is achieved, and the same decreasing level of the voltage hysteresis under dual-sweeping is demonstrated for both obviously suppressed trap/detrap electron density (N-ot) and interface trap density (d-it) by in situ La dipole technique. Meanwhile, since the interdiffusion of La atoms and Si atoms was observed by high-resolution transmission electron microscope (HrTEM) image and energy dispersive X-ray (EdX) analysis, an interpretative model with LaSiOx formation by the element interdiffusion between laminated layer is proposed for explaining of electrical characteristics improvement by in situ La-dipole technique. The results exhibit a promising approach for multiple threshold voltage (multi-V-t) formation and further performance boosting in future nanosheet gate-all-around field effect transistors (NS GAA-FETs).

关键词： Flat-band voltage (V-FB) modulation high-k metal gate (HKMG) La2O3 dipole

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Enhanced quality of Al_(2)O_(3)/SiC gate stack via microwave plasma annealing

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rare Metals 2024年第10期43卷 5362-5371页

作者： Nan-Nan You Xin-Yu Liu Qian Zhang Zhen Wang Jia-Yi Wang Yang Xu Xiu-Yan Li Yu-Zheng Guo Sheng-Kai Wang High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of the Chinese Academy of SciencesBeijing 100029China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 100049China School of Electrical Engineering and Automation Wuhan UniversityWuhan430072China Department of Micro/Nano Electronics School of Electronic Information and Electrical EngineeringShanghai Jiao Tong UniversityShanghai 200240China

The high-quality gate dielectric on silicon carbide(SiC)surface is critical to fabricate high-performance SiC metal-oxide-semiconductor field-effect transistors(MOSFETs).This research employs microwave plasma annealing(MPA)to obtain high-quality Al_(2)O_(3)/SiC gate *** designing MPA atmosphere and optimizing the plasma power,the SiC MOS capacitor with a Al_(2)O_(3)dielectric film shows the enhanced *** interface state density is reduced by 1 order of magnitude to 6×10^(11)cm^(-2)·eV^(-1),the breakdown electric field is increased,and the voltage shift is effectively suppressed Besides,the mechanism of MPA process is discussed in terms of the thermal effect and reactant species.X-ray photoelectron spectroscopy(XPS)results unveil oxygen plasma plays the main *** plasma power during the MPA process results in defect repairs of the firstneighbor Al-O bonding and partial removal of Al-O-H bond from the interface *** study demonstrates that MPA process is an effective option to realize highquality dielectric and interface on SiC.

关键词： Silicon carbide Al_(2)O_(3) Metal-oxide-semiconductor Microwave plasma annealing defect repairs X-ray photoelectron spectroscopy

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Focal-Length Measurement of Multifocal Metalens by Using Far-Field Imaging

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IEEE PHOTONICS TECHNOLOGY LETTErS 2025年第4期37卷 219-222页

作者： Zhou, Ming Shan, dengyu Gong, Jiaheng Huang, Haiyang Li, Wei Westlake Inst Optoelect Zhejiang Key Lab 3D Micro Nano Fabricat & Characte Hangzhou 311421 Zhejiang Peoples R China Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol State Key Lab Mat Integrated Circuits Shanghai 200050 Peoples R China

This article used far-field light source to investigate the focal length of the short focal length, multifocal metalens. The feasibility of the scheme was analyzed by using imaging simulation. In addition, the relative error between far-field imaging method and collimated laser measurement was analyzed. The data results show that the relative error is 0.49%, as the point light source located 2000mm away, for ideal test lens with focal length of 10mm. An optical system composed of double lenses was constructed to measure the focal length of a metasurface with four focal points. The experimental results show that the system can determine the focal position within a step of 0.1mm.

关键词： Lenses Gray-scale Measurement by laser beam Light sources Optical imaging Length measurement Adaptive optics Optical filters Metasurfaces Light emitting diodes Metalens multifocal secondary imaging technology focal length measurement

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A New Pixel Circuit for Micro-Light Emitting diode displays With Pulse Hybrid Modulation driving and Compensation

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IEEE JOUrNAL OF THE ELECTrON dEVICES SOCIETY 2024年 12卷 1-6页

作者： Xiao, Juncheng Huo, Wenxue Yuan, dong Liang, Ce Lai, Guhuang Li, Ji Xu, Hongyuan Li, Shan Zhang, Shengdong Peking Univ Sch Elect & Comp Engn Shenzhen Grad Sch Shenzhen 518000 Peoples R China TCL China Star Optoelect Semicond Display Technol Inst R&D Ctr Shenzhen 518000 Peoples R China Peking Univ Shenzhen Grad Sch Shenzhen 518000 Peoples R China Peking Univ Sch Integrated Circuits Beijing 100871 Peoples R China

A new pixel circuit consisting of eleven n-type IGZO transistors (TFTs) and four capacitors is proposed and applied for micro light emitting diode (MLEd) displays. The circuit is driven by pulse hybrid modulation (PHM), combining pulse amplitude modulation (PAM) and pulse width modulation (PWM). In purpose, high grayscales are achieved by PAM mode and low grayscales are achieved by PWM mode, which keep the driving current of LEd out of the small value range so as to avoid unstable luminance performance. It is conducted that the MLEd display driven by PHM demonstrate a stable luminance at low grayscale with well suppressed luminance errors of over 30% decrease, in comparison with the display driven by PAM. Moreover, both threshold voltage (VTH) shifts of driving TFTs for PAM mode and PWM mode could be well compensated in this circuit. As revealed by simulations, the driving current variations of LEd could be retained within 10% when VTH shifts in the ranges from -1 to 2 V for PAM driving TFT and from -1 to 1.5 V for PWM driving TFT, respectively. In practice, a good brightness uniformity over 90% after 240-hours aging of the MLEd display could be realized.

关键词： Micro- LEd (MLEd) pulse hybrid modulation (PHM) threshold voltage (V-TH) shift compensation

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All-silicon polarization-independent broadband achromatic metalens designed for the mid-wave and long-wave infrared

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OPTICS EXPrESS 2023年第26期31卷 44340-44352页

作者： Yue, Song Liu, Yuxin Wang, ran Shi, Haiyan Feng, Yanming Wen, Zhidong Zhang, Zichen Chinese Acad Sci Microelect Instruments & Equipment R&D Ctr Inst Microelect 3 Beitucheng West Rd Beijing 100029 Peoples R China Univ Chinese Acad Sci Sch Integrated Circuits 19 A Yuquan Rd Beijing 100049 Peoples R China

Metasurfaces demonstrate excellent capabilities in manipulating the phase, amplitude and polarization of light. Metalens, as a typical kind of metasurface devices, shows great prospect in simplifying imaging systems. However, like diffractive optical elements, intrinsic dispersion of metasurfaces is high. Thus, significant chromatic aberration is present in common metalenses, deteriorating imaging quality under broadband illumination condition and limiting their applications. To tackle this problem, broadband achromatic metalenses have been proposed and demonstrated in the visible and near-infrared wavelength regions so far. However, broadband achromatic metalens working in the mid-wave and long-wave infrared is still rare. In this paper, thanks to the ingenious design of meta-units that provide the required local phase and phase dispersion, several all-silicon broadband achromatic metalenses working in the mid-wave infrared (3-5 mu m) or long-wave infrared (8-14 mu m) wavelengths are proposed. Numerical simulation results demonstrate that the designed broadband achromatic metalenses can provide a near-constant focal length with small deviations and an average focusing efficiency of about 70% over the whole operation bandwidths. In addition, these metalenses hold near diffraction-limited focusing capability and polarization-independent focusing features. The achromatic metalenses proposed here are beneficial for improving imaging quality under broadband illumination and increasing detection efficiency of mid-wave and long-wave infrared detection systems.

关键词： Chromatic aberration diffractive lenses diffractive optical elements Imaging systems Infrared detectors Optical elements

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Lp-slam: language-perceptive rGB-d SLAM framework exploiting large language model

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COMPLEX & INTELLIGENT SYSTEMS 2024年第4期10卷 5391-5409页

作者： Zhang, Weiyi Guo, Yushi Niu, Liting Li, Peijun Wan, Zeyu Shao, Fei Nian, Cheng Farrukh, Fasih Ud din Zhang, debing Zhang, Chun Li, Qiang Zhang, Jianwei Tsinghua Univ Sch Integrated Circuits Beijing 100084 Peoples R China Univ Hamburg Fac Math Informat & Nat Sci Dept Informat Grp TAMS Vogt Kolln Str 30 D-22527 Hamburg Germany

With the development of deep learning, a higher level of perception of the environment such as the semantic level can be achieved in the simultaneous localization and mapping (SLAM) domain. However, previous works did not achieve a natural-language level of perception. Therefore, LP-SLAM (Language-Perceptive rGB-d SLAM) is proposed that leverages large language models (LLMs). The texts in the scene can be detected by scene text recognition (STr) and mapped as landmarks with a task-driven selection. A text error correction chain (TECC) is designed with a similarity classification method, a two-stage memory strategy, and a text clustering method. The proposed architecture is designed to deal with the mis-detection and mis-recognition cases of STr and to provide accurate text information to the framework. The proposed framework takes input images and generates a 3d map with sparse point cloud and task-related texts. Finally, a natural user interface (NUI) is designed based on the constructed map and LLM, which gives position instructions based on users' natural queries. The experimental results validated the proposed TECC design and the overall framework. We publish the virtual dataset with ground truth, as well as the source code for further research. https://***/GroupOfLPSLAM/LP_SLAM.

关键词： Simultaneous localization and mapping (SLAM) Large language model (LLM) ChatGPT Natural user interface (NUI)

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