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24th International Conference on Electronic Packaging Technology (ICEPT)

作者： Yang, Shicheng Sun, Peng Xu, Zepeng Pang, Jin Biao Xu, Meijuan Lin, Zhuo China Aerosp Sci & Technol CAST504 Dept Microwave & Millimeter Wave Circuits Xian Peoples R China Yunke Elect Co Ltd R&D Ctr Zhenhua Grp Guiyang Peoples R China

ISBN: (纸本)9798350338812;9798350338829

Low-temperature co-fired ceramic (LTCC) technology is widely used in aerospace applications and is one of the main technologies for miniaturization of products. However, the current gold-system LTCC technology used in aerospace products is costly and cannot be used as ceramic housings. In this paper, we introduce a new Chinese high bending strength copper-system LTCC technology, which is aimed to solve the problems faced by the current gold-system LTCC. Copper-system LTCC takes advantage of copper's high conductivity (low conductor loss) and low raw material cost, while achieving a high bending strength comparable to that of high-temperature co-fired ceramics (HTCC). This paper first introduces the material properties of the copper-system LTCC, and then show the results of the experimental substrate fabrication and micro-assembly verification. The results demonstrate that it can provide a viable solution for future low-cost, high bending strength, high frequency aerospace applications.

关键词： LTCC copper bending strength low cost high frequency

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Low-cost and facile assembly strategy for fiber ribbons and integrated optical waveguides with MT-ferrule--compatible optical connector 23

Low-cost and facile assembly strategy for fiber ribbons and ...

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23rd International Conference on Electronic Packaging Technology (ICEPT)

作者： Liu, Xiaofeng Wang, Guodong Liang, Ziyan Yao, Tengfei Miao, Hua Sun, rong Shennan Circuits Co LTD R&D Dept Shenzhen Inst Adv Technol Shenzhen Peoples R China Shennan Circuits Co LTD R&D Dept Shenzhen Peoples R China Shenzhen Inst Adv Technol Guangdong Prov Key Lab Mat High Dens Elect Packag Shenzhen Peoples R China

ISBN: (数字)9781665499057

ISBN: (纸本)9781665499057

Polymer waveguides are expected to be applied to optical circuit boards for high-speed optical interconnection where conventional connectors are normally required. We presented a novel optical connector assembled optical printed circuit board (OPCB) approach that possessed potential to meet packaging requirements, including reflow-solderingcompatibility, high reliability and low insertion loss. An inplane coupling technique that actively mechanically transferable (MT) connectorized on rigid Fr4 substrate with alignment features was demonstrated. Here, 230 mm-long waveguides with step index and approximate 50x50 um(2) geometric profiles were fabricated. The propagation loss of the waveguide was approximately 0.15 dB/cm at the wavelength of 850 nm, which was sufficiently small to satisfy the basic requirement for optical circuit boards. A dicing saw process was used to fabricate the alignment slots that was used for carrying MT-ferrule-compatible optical connector. The polymer waveguides were butt-coupled with the standard MTtype connectors to realize optical coupling between optical waveguides and fibers. Besides, the manufacturing, optical functionality, and environmental reliability of the related multimode optical waveguide devices were also investigated. The average total insertion loss of optical waveguide channels was approximately 6.5 dB, and optical return loss was measured to be -35 dB or even lower. Moreover, the high-speed optical signal transmission tests have been demonstrated that error-free and clear eye openings were achieved at a data rate of 10 Gb/s. The fabricated rigid optical circuit board with MT connectors could withstand 1000 hours 85 C/85%rH relative humidity test, 1000 hours thermal shock test as well as 5 cycles of lead-free reflow soldering test. Hence, the presented low-cost, mass-productive and facile assembly strategy of connector to seamlessly interface optical fiber ribbons with polymer optical waveguides has attractive practical appl

关键词： integrated optical waveguides butt-coupling method MT connectors polymer waveguide device

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Impact of sputtering and redeposition on the morphological profile evolution during ion-beam etching of blazed gratings

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JOUrNAL OF VACUUM SCIENCE & TECHNOLOGY A 2024年第5期42卷 053006-053006页

作者： Liu, Ze-Xuan Li, Xing-Yu Zhang, Quan-Zhi Schulze, Julian Zhang, ruo-Bing Wang, You-Nian Dalian Univ Technol Sch Phys Dalian 116024 Peoples R China Dalian Univ Technol Sch Integrated Circuits Dalian 116024 Peoples R China Ruhr Univ Bochum Chair Appl Electrodynam & Plasma Technol Dept Elect Engn & Informat Sci D-44801 Bochum Germany Tsinghua Univ Grad Sch Shenzhen Lab Adv Technol Elect Engn & Energy Shenzhen 518055 Peoples R China

Ion-beam etching (IBE) is widely used in the fabrication of high-quality blazed gratings due to its high resolution and directionality, which allows for the control of blazed angles and smooth surface profiles. Throughout the ion-beam etching process, the redeposition of sputtered species onto the wafer occurs, affecting the profile evolution and blazed angle. To investigate this phenomenon in the fabrication of blazed gratings, a self-consistent simulation model utilizing the cellular method has been developed to analyze the etching and redeposition mechanisms in the IBE process. The model yields good agreement with the experimentally observed evolution of the etching profile. By examining the density and velocity distributions of the sputtered species, the coexistence of etching and redeposition is confirmed and explained, highlighting the visually significant role of redeposition. Our model takes into account the "footing effect" that is unavoidable in mask manufacturing, and its impact on the morphology evolution during blazed grating IBE is studied.

关键词： Etching

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CSA-CiM: Enhancing Multifunctional Computing-in-Memory With Configurable Sense Amplifiers

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IEEE TrANSACTIONS ON COMPUTEr-AIdEd dESIGN OF INTEGrATEd circuits ANd SYSTEMS 2025年第5期44卷 1869-1873页

作者： Jiang, Yuxiao Ni, Kai Kampfe, Thomas Zhuo, Cheng Yan, Zheyu Yin, Xunzhao Zhejiang Univ Coll Informat Sci & Elect Engn Hangzhou 310027 Peoples R China Univ Notre Dame Elect Engn Dept Notre Dame IN 46556 USA Fraunhofer IPMS Ctr Nanoelect Technol D-01109 Dresden Germany Zhejiang Univ Sch Integrated Circuits Hangzhou 310027 Peoples R China Zhejiang Univ Key Lab Collaborat Sensing & Autonomous Unmanned S Hangzhou 310027 Peoples R China

Computing-in-memory (CiM) effectively alleviates the memory wall problem faced by traditional von Neumann architectures when handling data-intensive applications. Most CiM arrays employ dedicated sense amplifiers (SAs) to perform specific functions, and prior configurable CiM arrays achieve multifunctionality by stacking multiple SAs with corresponding functions. However, the independent nature of these SAs, particularly the analog-to-digital converter (AdC), results in excessive energy and area consumption. In this article, we propose a configurable multifunctional ferroelectric field effect transistor (FeFET)-based CiM array design, including configurable peripheral circuit with corresponding multifunctionalities and reusable SA components, to reduce energy consumption and latency. The array cells perform logical ANd and XNOr operations, and the proposed SA can be configured to operate in either AdC or winner-take-all (WTA) modes, thereby enabling the array to implement both multiplication-accumulation (MAC) and associative search operations. Instead of operating independently, the WTA component within the SA participates as a flash stage in successive approximation register (SAr) conversions in AdC mode, thus enhancing the WTA utilization, energy efficiency and compactness. By integrating the multifunctional CiM array and the configurable SA, our design supports MAC, Hamming-distance computation (HdC), and nearest neighbor search (NNS) operations within the same structure. Compared to existing works, our design achieves energy efficiency improvements of 7.2x for MAC, 2.9x for HdC, and EdP improvement of $6.4\times $ for NNS, respectively.

关键词： FeFETs Artificial neural networks Logic Logic arrays Iron Integrated circuits Energy efficiency Binary trees Sensors Logic gates Analog-to-digital converter (AdC) compute-in-memory (CiM) ferroelectric field-effect transistor (FeFET) winner-take-all (WTA)

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robust Sodium Carboxymethyl Cellulose-Based Neuromorphic device with High Biocompatibility Engineered through Molecular Polarization for the Emulation of Learning Behaviors in the Human Brain

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ACS APPLIEd MATErIALS & INTErFACES 2024年第49期16卷 67321-67332页

作者： Liu, Yanxin Wang, Mingge Liu, Zeyu Li, Lei Wang, Shidong duan, Xinqing Wang, Zewen Hsieh, dar-Jen Chang, Kuan-Chang Peking Univ Sch Elect & Comp Engn Shenzhen 518055 Peoples R China Hainan Med Univ Affiliated Hosp 1 Dept Joint Surg Key Lab Emergency & TraumaMinist Educ Haikou 570102 Peoples R China Chinese Acad Sci Shenzhen Inst Adv Technol Shenzhen 518055 Peoples R China Shenzhen Technol Univ Coll Integrated Circuits & Optoelect Chips Shenzhen 518118 Peoples R China ACRO Biomed Co R&D Ctr Kaohsiung 82151 Taiwan

Sodium carboxymethyl cellulose (CMC-Na), derived from natural cellulose and frequently employed as a biocompatible coating, thus renders it an ideal component for the construction of highly biocompatible neuromorphic devices aimed at biomachine interfaces. Here, an array of Mo/CMC-Na/ITO neuromorphic devices is fabricated, with CMC-Na serving as the functional layer. The devices exhibit capabilities to emulate various synaptic learning rules and demonstrate high endurance performance among biomaterial-based electronics, achieving stability over 2 x 104 pulses. Then, simulations of human brain-inspired learning and forgetting paradigms are conducted, highlighting the versatility of the device array in mimicking learning processes. Applications in pattern recognition leverage "learning-forgetting" paradigms, showcasing the potential of the device in cognitive tasks. Electrical measurements elucidate the mechanism of molecular polarization rotation, which offers insights into the modulation of synaptic weights within biocompatible biomaterial-based devices. Furthermore, the biocompatible properties of the devices are evaluated using human embryonic kidney 293 cells, confirming their excellent biocompatibility. The biodegradability of the devices is assessed by using physical transient tests to evaluate their sustainability in biomedical applications. Such advances represent pivotal improvements in implantable bioinspired electronics and show potential in biomachine interface and cognitive computing applications.

关键词： sodium carboxymethylcellulose neuromorphic device highly biocompatibleelectronics molecular polarizationrotation emulation of learning-forgetting behavior

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An ultra-violet and infrared dual-band photodetector using a Ga2O3 thin film and HgTe colloidal quantum dots

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NANOSCALE AdVANCES 2025年第8期7卷 2248-2254页

作者： Zheng, Qiqi Yang, Yu Li, Liansheng Xu, Qing-An Zhang, Kenan Xue, Xiaomeng Ma, Lisha Yu, Jianhao Li, Wanjun Chen, Menglu Beijing Inst Technol Sch Opt & Photon Beijing 100081 Peoples R China Optoelect Measurement & Intelligent Percept Zhong Beijing 100190 Peoples R China Westlake Inst Optoelect Zhejiang Key Lab 3D Micro Nano Fabricat & Charact Hangzhou 311421 Zhejiang Peoples R China Chongqing Normal Univ Coll Phys & Elect Engn Chongqing 401331 Peoples R China Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol Natl Key Lab Mat Integrated Circuits Shanghai 200050 Peoples R China

dual-band photodetection of ultraviolet (UV) and infrared (Ir) light is an advanced technology aimed at simultaneously or selectively detecting signals from these two distinct wavelength bands. This technique offers broad application prospects, particularly in environments requiring multispectral information. In this work, a solar-blind UV photodetector made from an amorphous Ga2O3 (a-Ga2O3) thin film was combined with a short-wave infrared photodetector made from a HgTe colloidal quantum dot (CQd) film. The photodetector exhibited a high responsivity of up to 1808 A W-1, detectivity of 3.88 x 10(14) Jones, and an external quantum efficiency of 8.8 x 10(5)% at UV wavelength as well as a responsivity of 0.25 A W-1, detectivity of 1.45 x 10(10) Jones, and an external quantum efficiency of 15.5% at short-wave infrared wavelength. Furthermore, corona discharge detection using this photodetector was demonstrated.

关键词： Nanocrystals

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Self-reducing precursors for aluminium metal thin films: evaluation of stable aluminium hydrides for vapor phase aluminium deposition

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dALTON TrANSACTIONS 2024年第18期53卷 7711-7720页

作者： Huster, Niklas Mullins, rita Nolan, Michael devi, Anjana Ruhr Univ Bochum Fac Chem & Biochem Inorgan Mat Chem Univ Str 150 D-44801 Bochum Germany Univ Coll Cork Tyndall Natl Inst Cork T12 R5CP Ireland Leibniz Inst Solid State & Mat Res Helmholtzstr 20 D-01069 Dresden Germany Fraunhofer Inst Microelect Circuits & Syst IMS Finkenstr 61 D-47057 Duisburg Germany Tech Univ Dresden Mat Chem Bergstr 66 D-01069 Dresden Germany

Thin films of Al as interconnect materials and those of AlN as wide bandgap semiconductor and piezoelectric material are of great interest for microelectronic applications. For the fabrication of these thin films via chemical vapor deposition (CVd) based routes, the available precursor library is rather limited, mostly comprising aluminium alkyls, chlorides, and few small amine-stabilized aluminium hydrides. Herein, we focused on rational precursor development for Al, their characterization and comparison to existing precursors comprising stabilized aluminium hydrides. We present and compare a series of potentially new and reported aluminium hydride precursors divided into three main groups with respect to their stabilization motive, and their systematic structural variation to evaluate the physicochemical properties. All compounds were comprehensively characterized by means of nuclear magnetic resonance spectroscopy (NMr), Fourier-transform infrared spectroscopy (FTIr), elemental analysis (EA), electron-impact ionization mass spectrometry (EI-MS) and thermogravimetric analysis (TGA). Promising representatives were further evaluated as potential single source precursors for aluminium metal formation in proof-of-concept experiments. Structure and reaction enthalpies with NH3 or H2 as co-reactants were calculated via first principles density functional theory simulations and show the great potential as atomic layer deposition (ALd) precursors for Al and AlN thin films. Aluminium hydride based complexes were synthesized and characterised with the scope of employing them as Al precursors in chemical vapor deposition processes that was suppored by dFT calculations.

关键词： III-V semiconductors

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An electromagnetic simulation assisted small signal modeling method for InP double-heterojunction bipolar transistors

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Chinese Physics B 2022年第6期31卷 717-724页

作者： Yanzhe Wang Wuchang ding Yongbo Su Feng Yang Jianjun ding Fugui Zhou Zhi Jin School of Microelectronics University of Chinese Academy of SciencesBeijing 100049China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

We present a convenient and practical electromagnetic(EM)assisted small-signal model extraction method for InP double-heterojunction bipolar transistors(dHBTs).Parasitic parameters of pad and electrode fingers are extracted by means of 3d EM *** simulations with a new excitation scheme are closer to the actual on-wafer measurement *** simulation settings are calibrated by comparing measurement and simulation of OPEN and SHOrT structures.A simplerπ-type topology is proposed for the intrinsic model,in which the base-collector resistance rμ,output resistance rce are deleted,and a capacitance Cce is introduced to characterize the capacitive parasitic caused by the collector finger and emitter ground *** intrinsic parameters are all extracted by exact equations that are derived from rigorous *** method is characterized by its ease of implementation and the explicit physical meaning of extraction *** validations are performed at four biases for three InGaAs/InP HBT devices with 0.8×7μm,0.8×10μm and 0.8×15μm emitter,and quite good fitting results are obtained in the range of 0.1-50 GHz.

关键词： electromagnetic simulation InP double-heterojunction bipolar transistor parameter extraction small-signal modeling

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End-to-end Lithography Modeling Based on Process Parameters and deep Learning

End-to-end Lithography Modeling Based on Process Parameters ...

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2nd International Symposium of Electronics design Automation (ISEdA)

作者： Lin, Zebang ren, Kun Gao, dawei Wu, Yongyu Xu, Shibin Lu, Miaomiao Zhejiang Univ Coll Integrated Circuits Hangzhou Peoples R China Zhejiang ICsprout Semicond Co Ltd Hangzhou Peoples R China Zhejiang Technol Innovat Ctr CMOS IC Mfg Proc & D Hangzhou Peoples R China ZJU Hangzhou Global Sci & Technol Innovat Ctr Hangzhou Peoples R China

ISBN: (纸本)9798350352047;9798350352030

Lithography is one of the most important processes in integrated circuit manufacturing, and with the continuous advancement of technology nodes, the cost of computational lithography is also increasing. Previous studies have mostly viewed lithography system as a black box mapping from image to image, lacking guidance on process parameters and supporting experimental data when comparing experimental results. This article models the lithography system based on process parameters and deep learning, and verifies it using experimental data. The optical system combines process parameters and uses sum of coherent systems (SOCS) to reduce the computational complexity of optical simulation. The resist system takes aerial images as input and outputs binary masks. Our proposed method has a 9.36% accuracy improvement in mean intersection over union (mIOU) compared to traditional compact resist models.

关键词： deep learning lithography modeling U-Net computational lithography

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8-Shaped Inductors: An Essential Addition to rFIC designers' Toolbox

IEEE OPEN JOURNAL OF THE SOLID-STATE CIRCUITS SOCIETY

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IEEE OPEN JOUrNAL OF THE SOLId-STATE circuits SOCIETY 2024年 4卷 131-146页

作者： Guan, Pingda Jia, Haikun deng, Wei Siriburanon, Teerachot Staszewski, robert Bogdan Wang, Zhihua Chi, Baoyong Tsinghua Univ Sch Integrated Circuits Beijing 100084 Peoples R China Univ Coll Dublin Sch Elect & Elect Engn Dublin D04V1W8 Ireland AGH Univ Krakow Dept Measurement & Elect PL-30059 Krakow Poland

The rapidly advancing field of millimeter-wave (mm-wave) radio-frequency integrated circuit (rFIC) design has ushered in an era of remarkable innovation, particularly in the realm of on-chip passive devices. Among them, 8-shaped inductors have emerged as a novel and promising variant, attracting significant research interest thanks to their unique geometry and electromagnetic (EM) properties. The distinctive feature of 8-shaped inductors lies in their antiparallel magnetic fields due to the opposing current flows within the two turns, enabling manifold applications. In this article, we comprehensively explore the 8-shaped inductors with a focus on their diverse utilizations, including EM interference (EMI) reduction, compactness of rF layout, provision for a magnetic feedforward/feedback arrangement, and oscillation mode manipulation, thereby demonstrating that the 8-shaped inductor can be an essential addition to rFIC designers' toolbox.

关键词： CMOS inductor low-noise amplifier (LNA) low-noise amplifier (LNA) millimeter wave (mm-wave) millimeter wave (mm-wave) overview overview power amplifier (PA) power amplifier (PA) radio-frequency integrated circuit (rFIC) radio-frequency integrated circuit (rFIC) review review transceiver (TrX) transceiver (TrX) transformer transformer voltage-controlled oscillator (VCO) voltage-controlled oscillator (VCO) transformer voltage-controlled oscillator (VCO)

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