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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Yang Wang Kun Liu Chunlin Han Youtao Zhang Xiaopeng Li Lei Yang Yufeng Guo Yi Zhang Nanjing Vocational University of Industry Technology Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9781665482271

This paper presents a continuous time ultra-high speed broadband $\Sigma-\Delta$ analog-to-digital converter (ADC) with a clock sampling rate of 20 GS/s based on 0.7 $\boldsymbol{\mu}\mathbf{m}\ \mathbf{InP}$ DHBT process. The ADC includes a low-pass second-order $\Sigma-\Delta$ Modulator, which adopts 2bit quantization. The circuit includes a high linearity 2-bit current steering digital to analog converter (DAC). A system level simulation is presented considering values of resistors and capacitors in the integrator, as well as other data regarding the opamp and the quantizer. Simulation results show that for input signal of 1000mV, when the sampling rate is 20GSps, the $\Sigma-\Delta$ ADC designed has a spurious free dynamic range (SFDR) of 45.1dB and a signal-to-noise ratio (SNR) of 35.2dB for input frequency of 620.12 MHz.

关键词： Sigma-delta modulation Quantization (signal) Simulation DH-HEMTs Millimeter wave radar Broadband communication Heterojunction bipolar transistors

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A Hybrid Electromagnetic Inversion Method Based on BI-GMM-GAMP and Convolutional Neural Network

A Hybrid Electromagnetic Inversion Method Based on BI-GMM-GA...

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Lijing Zhou Zhixun Liu Fangfang Wang College of Electronic and Optical Engineering & College of Flexible Electronic (Future Technology) Nanjing University of Posts and Telecommunications Nanjing China Bell Honors School Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications State Key Laboratory of Millimeter Waves Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (纸本)9781665482271

Electromagnetic inverse scattering is a nonlinear and ill-posed problem. Some traditional algorithms have been proposed to solve it, but they cannot perform well in both terms of efficiency and accuracy. In order to reconstruct high quality images in real time, this paper presents a hybrid method which combines the Born iterative Gaussian mixture model generalized approximate message passing (BI-GMM-GAMP) algorithm with a convolutional neural network (CNN). To be specific, BI-GMM-GAMP is first used for obtaining the preliminary images. Subsequently, these pictures are used for training U-Net. Experiments show the validity of this method.

关键词： Training Inverse problems Message passing Electromagnetic scattering Approximation algorithms Real-time systems Convolutional neural networks

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Design of a Broadband High Flatness Drive Amplifier Based on GaAs Process

Design of a Broadband High Flatness Drive Amplifier Based on...

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International Conference on Integrated Circuits and microsystems (ICICM)

作者： Jingjing Huang Jie Lin Shu Ying Shanwen Hu Zhikuang Cai Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China School of Electronic Engineering and Intelligent Manufacturing Anqing Normal University Anqing China School of Electronic Science and Engineering Nanjing University Nanjing China College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

In the RF front-end system, the drive amplifier require high flatness in the bandwidth. To adhere to the application requirements of the RF front-end circuit integration, miniaturization and high efficiency, based on the traditional theory of the drive amplifier and equalizer, this paper presents a design method to match the input impedance of the drive amplifier. This ensures that the matching network not only accommodates impedance matching but also enhances in-band flatness. To verify the reliability of this method, we developed a compact, high flatness drive amplifier utilizing the GaAs pHEMT process. The device operates in a frequency range of 2-6 GHz and covers WiFi, satellite and radio positioning. The small-signal gain is 23.5± 0.1dB, and both the input and output return loss are less than −12dB. Large-signal test reveal that the saturated output power of the whole broadband is greater than 22.5 dBm, and the corresponding power-added efficiency is greater than 34%. The test results demonstrate enhanced flatness compared to the traditional drive amplifiers.

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A 100MS/s Pipeline ADC Without Calibration In 0.18µm CMOS technology

A 100MS/s Pipeline ADC Without Calibration In 0.18µm CMOS T...

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Yi Zhang Yaqin Liu Hongliang Xia Lei Yang Yang Wang Youtao Zhang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China

ISBN: (纸本)9781665482271

Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture is finally determined to be $\boldsymbol{3.5}\mathbf{b}\boldsymbol{\times 3+5}\mathbf{b.}$ The redundant calibration technology is adopted between each stage to reduce the influence of comparator offset on ADC accuracy. To reduce power consumption and area, SHA-less sampling is adopted. The traditional bootstrap switch is improved to dynamically change the substrate potential so as to reduce the influence of leakage in SHA-less sampling circuit. The post-simulation results shows that the high-speed pipeline ADC designed in this paper can reach 9.97-bit ENOB and 67.76 dB SFDR under the sampling frequency of 100MS/s and input signal frequency of Nyquist, the overall power consumption is about 390mW, and the overall area of the layout is 4.56mm 2 .

关键词： microwave integrated circuits Power demand Pipelines Layout Voltage microwave circuits Calibration

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Design of A 0.5~50GHz Differential Distributed Amplifier Based on 0.7μm InP HBT technology

Design of A 0.5~50GHz Differential Distributed Amplifier Bas...

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Yuhang Zhuang Xin Yan Guanglai Wu Hao Gao Youtao Zhang Yujie Tang Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Eindhoven University of Technology Holland GuoBo Electronics Co. Ltd Nanjing China National and local joint engineering Laboratory for RF Integration and Micro assembly Technology Nanjing China Key Laboratory of Microwave millimeter Wave monolithic Integrated and Modular Circuits Nanjing China State Key Laboratory of Millimeter Wave Southeast University Nanjing

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

This paper presents a 0.5∽50GHz differential distributed amplifier implemented in a 0.7μm InP HBT technology. The amplifier uses a common-source common-gate structure with a source follower as the gain unit, and the transmission line selects the grounded coplanar waveguide. At the same time, a transmission is introduced to peak the high-frequency gain and expand the bandwidth. The simulation results show that the differential-mode gain of the amplifier is typically 12 dB in the frequency range of 0.5 to 50 GHz, with a flatness of ±1.5 dB. The input and output return losses are both less than -10 dB, and the output 1dB compression point > 10dBm.

关键词： Distributed amplifiers microwave technology Simulation Millimeter wave technology Bandwidth Heterojunction bipolar transistors Topology

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An Artificial Neuromuscular Synapse Based on a Ferroelectric Pb(Zr1-x Tix)O3/SiC Floating Gate Transistor

An Artificial Neuromuscular Synapse Based on a Ferroelectric...

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International Conference on Solid-State and Integrated Circuit technology

作者： Yu Liu Lin Lin Xiang Wang Chengyan Zhong Junxiong Guo Wen Huang Yufeng Guo National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing P. R. China State Key Laboratory of Electronic Thin Films and Integrated Devices School of Integrated Circuit Science and Engineering University of Electronic Science and Technology of China Chengdu P. R. China Institute of Advanced Study School of Electronic Information and Electrical Engineering Chengdu University Chengdu P. R. China

ISBN: (数字)9798350361834

ISBN: (纸本)9798350361841

Neuromuscular junctions (NMJs) are specialized synapses that enable the efficient transduction of neural signals into muscle contractions in biological systems. Desirable artificial NMJs aim to replicate biological synaptic plasticity and high-power actuation for advanced robotics and prosthetics, but face challenges in achieving sufficient flexibility, strength, and self-contained operation. Here, we report a novel artificial NMJ based on a silicon carbide (SiC) ferroelectric field-effect transistor. By integrating a ferroelectric floating gate dielectric with a wide-bandgap SiC transistor, we achieve a wide range of non-volatile conductance modulation, enabling the emulation of long-term synaptic plasticities. We demonstrate the PZT-SiC transistor's higher threshold voltage and lower operating currents compared to traditional SiC transistors, resulting in reduced power consumption. The device exhibits excellent synaptic plasticity, with the ability to modulate synaptic weights through successive test cycles and upon pulsatile stimulation. We showcase the potential of the PZT-SiC synaptic transistor through its application in convolutional image processing, where it successfully extracts horizontal and vertical features using Sobel kernels. Our work presents a promising hardware platform for efficient and scalable artificial NMJs, paving the way for advanced biohybrid systems and neuromorphic robots.

关键词： Power demand Silicon carbide Neuromuscular Neuromorphics Feature extraction Threshold voltage Transistors Synapses Robots Prosthetics

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Isolation Enhancement in Closely Packed Wideband Antennas Using Metasurface

Isolation Enhancement in Closely Packed Wideband Antennas Us...

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Wenlu Qiu Jinxin Li Pei Xiao Zhu Liu Jun Dong College of Computer Science and Electronic Engineering Hunan University Changsha Hunan P. R. China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing P.R. China College of Electrical and Information Engineering Hunan University Changsha Hunan P. R. China School of Physics and Electronics Hunan Normal University Changsha Hunan P. R. China College of Information Science and Engineering Hunan Normal University Changsha Hunan P. R. China

ISBN: (纸本)9781665482271

A planar anisotropic metasurface superstrate structure for isolation enhancement of two closely packed antennas is proposed in this paper. The spacing of the initial antennas is only 0.12 $\lambda_{0}$ at 3.55 GHz $(\lambda_{0}$ is the wavelength at the center frequency). The metasurface structure is consists of periodic rectangular-loop unit resonators, which are printed on the one side of 1.5 mm thick FR-4 substrate in E-plane. By placing the decoupling structure beside the initial antennas instead of putting it in the middle of the antennas, it can reject coupling wave propagation and improve isolation of two ports of the antenna further. The simulated results show that the proposed metasurface structure is able to achieve port isolation improvement at least 19.7dB and at most 31.9dB with in the operation band from 3.3 to 3.8 GHz. More importantly, the antenna still keeps good performance with $\mathrm{S} < -10$ dB and has tendency to broaden bandwidth, while the metasurface superstrate structure is loaded.

关键词： microwave antennas Mutual coupling Resonant frequency Metasurfaces Broadband antennas Resonators Antennas

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Why Can One-Bit Quantization Work? A Mathematical Theory Analysis

Why Can One-Bit Quantization Work? A Mathematical Theory Ana...

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IEEE International Conference on Information Communication and Signal Processing (ICICSP)

作者： Shiqi Liu Bing Li Bo Zhao Lei Huang Weize Sun Long Chen Min Huang Weimin Bao Huzhou Key Laboratory of Terahertz Integrated Circuits and Systems Yangtze Delta Region Institute (Huzhou) University of Electronic Science and Technology of China Huzhou China College of Electronic and Information Engineering Shenzhen University Shenzhen China National and Local Joint Engineering Laboratory of RF Integration and Micro Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China State Key Laboratory of Millimeter Waves Southeast University Nanjing China School of Electrical Engineering Southwest Jiaotong University Chengdu China Peng Cheng Laboratory Shenzhen China School of Mechanical Engineering Northwestern Polytechnical University Xian China School of Artificial Intelligence Shenzhen Polytechnic Shenzhen China

With the increase of demand in the flexibility and rapidity in different industry areas, unmanned systems are implemented under various circumstances for the convenience they bring. However, the mobility restricts the system size and power consumption. In this case, much attention has been attracted by one-bit quantization for its simplification in signal acquiring and processing. Whereas, most of existing literature focus on how to reap information from one-bit data. Much less work explains the reason why the information can be achieved from the coarsely quantized data. In this paper, the process of one-bit quantization is analytically analyzed in detailed in a mathematical angle of view, where the quantization noise resulting from the nonlinear effect is analyzed. Specifically, the one-bit quantized data is decomposed mathematically, and the components are analyzed to show the existence of the requisite signal in the quantized signal. This offers a theoretical explanation of the effectiveness of one-bit quantization.

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A Systematic Study on Electronic, Mechanical, and Thermal Transport Properties of Germanium Antimony Selenide Telluride Alloy by First-Principles Approach

SSRN

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SSRN 2022年

作者： Lian, Xiaojuan Li, Fu Liu, Peng Wan, Xiang Liu, Xiaoyan Ren, Qingying Cai, Zhikuang Wang, Ning Wang, Lei College of Integrated Circuits Science and Engineering Nanjing University of Posts and Telecommunications NO. 9 Wenyuan Road Jiangsu Nanjing210023 China National and Local Joint Engineering Laboratory of RF Integration oand Micro-assembly Technology Nanjing University of Posts and Telecommunications NO. 9 Wenyuan Road Jiangsu Nanjing210023 China Electrical & Electronic Laboratory Center Department of Optical Engineering College of Electronic and Optical Engineering College of Microelectronics Nanjing University of Posts and Telecommunications NO. 9 Wenyuan Road Jiangsu Nanjing210023 China School of Science Key Laboratory of High Performance Scientific Computation Xihua University Chengdu610039 China

Ge2Sb2Se4Te alloy has most recently exhibited its outstanding optical properties for non-volatile photonic storage applications, while its electrical and thermal transport properties were rarely reported, thus limiting its application versatility. To overcome above issue, we performed detailed study on the electrical, mechanical and thermal transport properties of Ge2Sb2Se4Te alloy according to first-principles calculations. The calculated results showed that, originating from the layered crystal structure of Ge2Sb2Se4Te, its Young’s modulus and shear modulus along the in-plane direction were found to be larger than those along the out-of-plane direction, which suggested more superb anti-deformation characteristics along the in-plane direction. Besides, the calculated Poisson's ratio implied that the in-plane bonding of Ge2Sb2Se4Te was mainly ionic-covalent bonding, and the out-of-plane bonding was of van der Waals (vdW) interaction character. The huge chemical bond difference between in-plane direction and out-of-plane direction led to strong phonon anharmonicity and phonon thermal transport anisotropy. Therefore, layered Ge2Sb2Se4Te exhibited low phonon group velocity and short phonon lifetime, which led to encouragingly low lattice thermal conductivities of 4.45 W/mK, 3.54 W/mK and 0.41 W/mK along the x-axis, y-axis and z-axis at 300 K, respectively. Also, calculated electronic structure revealed the metallicity character of Ge2Sb2Se4Te alloy without pronounced band gap, which made this material applicable to thermal insulation materials rather than traditional thermoelectric materials. This work was useful to promote the application of Ge2Sb2Se4Te in the field of engineering thermal management and storage devices based on the optical-thermal mechanism. © 2022, The Authors. All rights reserved.

关键词： Van der Waals forces

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The growth and expansive applications of amorphous Ga2O3

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Chinese Physics B 2023年第8期 70-86页

作者：奚昭颖杨莉莉舒林聪张茂林李山史丽刘增郭宇锋唐为华 Innovation Center for Gallium Oxide Semiconductor (IC-GAO) College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies Nanjing University of Posts and Telecommunications Key Laboratory for Organic Electronics and Information Displays (KLOEID) & Institute of Advanced Materials (IAM) Jiangsu Key Laboratory for Biosensors Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing University of Posts and Telecommunications Key Laboratory of Aerospace Information Materials and Physics Nanjing University of Aeronautics and Astronautics Ministry of Industry and Information Technology

As a promising ultra-wide bandgap semiconductor material, gallium oxide（Ga2O3） is attracting extensive attention of researchers due to its feasible growth process, appropriate bandgap of 4.4 e V–5.3 e V allowing for deep-ultraviolet（deepUV） detection, good physical and chemical stability, high breakdown field strength and electron mobility, etc. Different from the strict processes for controllable crystalline Ga2O3（usually refer to as stable monoclinic β-Ga2O3）, amorphous Ga2O3（a-Ga2O3） film can be prepared uniformly at low temperature on a large-area deposition substrate, suggesting great advantages such as low manufacturing cost and excellent flexibility, dispensing with high-temperature and high vacuum techniques. Thus, a-Ga2O3extremely facilitates important applications in various applied fields. Therefore, in this concise review, we summarize several major deposition methods for a-Ga2O3films, of which the characteristics are ***, potential methods to optimize the film properties are proposed by right of the inspiration from some recent studies. Subsequently, the applications of a-Ga2O3thin films, e.g., in photodetectors, resistive random access memories（RRAMs） and gas sensors, are represented with a fruitful discussion of their structures and operating mechanisms.

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