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2023 IEEE International Symposium on Antennas and Propagation, ISAP 2023

作者： Huang, Shiliang Lin, Jie Ying, Shu Gu, Ling Hu, Shanwen Xue, Junjun Wang, Zixuan Cai, Zhikuang Yao, Jiafei Zhang, Jun Guo, Yufeng Anqing Normal University Anqing China Anhui Silimicro Electronics Technology Limited Liability Company Hefei China Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798350341140

This paper presents a scalable model for on-chip spiral inductors utilizing the space-mapping neural network (SMNN), built upon an enhanced 1-π equivalent circuit model. To address the inductor drop observed at low frequencies, a series network consisting of two pairs of inductors and resistors is integrated into the 1-π equivalent circuit model. The topology of the SMNN is optimized using the global search capability of the particle swarm optimization (PSO) algorithm, which determines the optimal weights and thresholds for the SMNN. Compared with traditional neural network models, the proposed SMNN reduces the number of neurons required for mapping the input-output nonlinear relationship, leading to enhanced accuracy and reduced modeling time, which takes a mere 10 to 15 seconds. © 2023 IEEE.

关键词： neural network parametric model Particle Swarm Optimization (PSO) scalable models space-mapping spiral inductors

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Compact SPAD pixels with fast and accurate photon counting in the analog domain

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Journal of Semiconductors 2021年第5期42卷 85-90页

作者： Zhiqiang Ma Zhong Wu Yue Xu College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF integration&Micro-Assembly Technology Nanjing 210023China

A compact pixel for single-photon detection in the analog domain is presented. The pixel integrates a single-photon avalanche diode(SPAD), a passive quenching & active recharging circuit(PQARC), and an analog counter for fast and accurate sensing and counting of photons. Fabricated in a standard 0.18 μm CMOS technology, the simulated and experimental results reveal that the dead time of the PQARC is about 8 ns and the maximum photon-counting rate can reach 125 Mcps(counting per second). The analog counter can achieve an 8-bit counting range with a voltage step of 6.9 mV. The differential nonlinearity(DNL) and integral nonlinearity(INL) of the analog counter are within the ± 0.6 and ± 1.2 LSB, respectively, indicating high linearity of photon counting. Due to its simple circuit structure and compact layout configuration, the total area occupation of the presented pixel is about 1500 μm^(2), leading to a high fill factor of 9.2%. The presented in-pixel front-end circuit is very suitable for the high-density array integration of SPAD sensors.

关键词： single-photon avalanche diode(SPAD) passive quenching&active recharging circuit(PQARC) analog counter nonlinearity

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A New Domain Decomposition Scheme for Electromagnetic Wave Scattering from Penetrable Targets 5

A New Domain Decomposition Scheme for Electromagnetic Wave S...

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5th IEEE International Conference on Computational Electromagnetics, ICCEM 2019

作者： Zheng, Kai-Lai Chu, Peng Kong, Wei-Bin Xu, Feng College of Electronic and Optical Engineer Nanjing University of Posts and Telecommunications Nanjing210023 China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology China State Key Lab. of Millimeter Waves Southeast University Nanjing210096 China College of Information Engineering Yancheng Insitute of Technology Yancheng China

ISBN: (纸本)9781538671115

In this paper, a new nonoverlapping domain decomposition (DD) scheme is built for solving EM scattering from penetrable targets. The Rao-Wilton-Glisson(RWG) basis functions are used to expand the equivalent surface electric/magnetic current on the entire surface. Each full RWG basis function across some boundary curve is split into two half-RWG basis functions. The global MoM matrix equation is then combined with the sparse matrix equation determined by the boundary electric/magnetic current continuity to form the complete model equation. In this DD scheme, when solving each subdomain, only part of the matrix needs to be stored into memory, and then the memory requirement is significantly reduced. Numerical examples are provided to demonstrate the validity of the proposed method. © 2019 IEEE.

关键词： Electromagnetic wave scattering

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Wide Stopband Substrate Integrated Waveguide Filter Using Bisection and Trisection Coupling in Multilayer

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Chinese Journal of Electronics 2024年第2期33卷 436-442页

作者： Peng CHU Jianguo FENG Peng ZHU Lei GUO Long ZHANG Leilei LIU Guoqing LUO Ke WU College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology School of Information and Communication Engineering Dalian University of Technology Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems Sun Yat-sen University College of Electronics and Information Engineering Shenzhen University School of Electronics and Information Hangzhou Dianzi University Poly-Grames Research Center Polytechnique Montreal

This article presents a highly efficient method for substrate-integrated-waveguide（SIW） filters to achieve very wide stopbands. By employing the proposed trisection slots in addition to the bisection slots as the inter-coupling structures, all spurious modes below TE505 of a SIW filter working in the fundamental mode TE101（f0）can be eliminated without requiring additional structure or complex theoretical analysis, without affecting the design of the fundamental passbands, and without degrading the performance of the filters. For verification, two prototype filters are designed, fabricated, and measured with wide stopbands up to 4.15f0 and 4.83f0, respectively. The proposed technique could facilitate the development of high-performance wide-stopband SIW filters for microwave/wireless circuits and systems.

关键词： Bandpass filter Wide stopband Substrate integrated waveguide Spurious mode suppression Multilayer

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A Blockchain-Based Internet of Things Forensics Model 7th

A Blockchain-Based Internet of Things Forensics Model

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7th International Conference on Artificial Intelligence and Security, ICAIS 2021

作者： Liang, Guangjun Xin, Jianfang Wang, Qun Ni, Xueli Guo, Xiangmin Department of Computer Information and Cyber Security Jiangsu Police Institute Nanjing China National and Local Joint Engineering Laboratory of Radio Frequency Integration and Micro Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China School of Electrical Engineering Anhui Polytechnic University Wuhu China

ISBN: (纸本)9783030786205

The Internet of Things has been proposed for nearly 20 years. Its rich digital trace repository provides insight into people’s daily activities at home and elsewhere. On the other hand, IoT devices can become targets of attacks, or even tools for a crime. The number of civil and criminal cases involving IoT devices or services is increasing year by year. IoT forensics refers to the process of collecting, analyzing, storing and providing digital evidence in IoT devices in a legally binding manner. In particular, the traceability, integrity and tamper resistance of the evidence should be maintained. However, traditional IoT forensics architecture may be difficult to achieve these goals. This article aims to explore the combination of blockchain technology and IoT forensics which can make full use of the natural advantages of traceability and tamper resistance. A forensic architecture of the Internet of Things based on blockchain evidence is proposed, including an applications layer and data layer. The applications layer includes various APP applications, and the data layer includes the evidence analysis platform and the blockchain platform. Furthermore, an IoT forensics model including blockchain storage and supervision is proposed which can ensure the traceability and tamper-proof of forensic data. © 2021, Springer Nature Switzerland AG.

关键词： Internet of things

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Circularly Polarized Leaky-wave Antenna Based on SubstrateIntegrated Waveguide Space Harmonic

Circularly Polarized Leaky-wave Antenna Based on SubstrateIn...

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International Symposium on Antennas and Propagation (ISAP)

作者： Yangjun Hu Leilei Liu Yangbing Jiang Dingwei Jiang Minghong Chen National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China

A circularly polarized leaky-wave antenna (LWA) is implemented on the substrate integrated waveguide (SIW) based on space harmonic radiation. The LWA cuts the current in two different directions by opening a cross-shaped slot on the substrate integrated waveguide. It realizes circular polarization and frequency sweeping characteristics by adjusting parameters of the slot. The antenna achieves a sweep range of 36°~13° in the θ direction backward radiation by -1 space harmonic from 15GHz to 17GHz. The gain is basically above 13.5dB. Parameters of the cross-shaped slot on the antenna performance are studied. The antenna is fabricated and the measurement results are agree well with the simulation ones.

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Design of a Broadband High Flatness Drive Amplifier Based on GaAs Process 8

Design of a Broadband High Flatness Drive Amplifier Based on...

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8th International Conference on Integrated Circuits and microsystems, ICICM 2023

作者： Huang, Jingjing Lin, Jie Ying, Shu Hu, Shanwen Cai, Zhikuang Guo, Yufeng Nanjing University of Posts and Telecommunications College of Integrated Circuit Science and Engineering Nanjing China Anqing Normal University School of Electronic Engineering and Intelligent Manufacturing Anqing China Nanjing University School of Electronic Science and Engineering Nanjing China National and Local Joint Engineering Laboratory of Rf Integration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798350318517

In the RF front-end system, the drive amplifier require high flatness in the bandwidth. To adhere to the application requirements of the RF front-end circuit integration, miniaturization and high efficiency, based on the traditional theory of the drive amplifier and equalizer, this paper presents a design method to match the input impedance of the drive amplifier. This ensures that the matching network not only accommodates impedance matching but also enhances in-band flatness. To verify the reliability of this method, we developed a compact, high flatness drive amplifier utilizing the GaAs pHEMT process. The device operates in a frequency range of 2-6 GHz and covers WiFi, satellite and radio positioning. The small-signal gain is 23.5± 0.1dB, and both the input and output return loss are less than -12dB. Large-signal test reveal that the saturated output power of the whole broadband is greater than 22.5 dBm, and the corresponding power-added efficiency is greater than 34%. The test results demonstrate enhanced flatness compared to the traditional drive amplifiers. © 2023 IEEE.

关键词： Equalizers

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Design of a Broadband Miniaturized Filter Power Amplifiers 8

Design of a Broadband Miniaturized Filter Power Amplifiers

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8th International Conference on Integrated Circuits and microsystems, ICICM 2023

作者： Liao, Xiang Huang, Jingjing Ying, Shu Hu, Shanwen Wang, Zixuan Guo, Yufeng Nanjing University of Posts and Telecommunications College of Integrated Circuit Science and Engineering Nanjing China Anqing Normal University School of Electronic Engineering and Intelligent Manufacturing Anqing China Nanjing University School of Electronic Science and Engineering Nanjing China National and Local Joint Engineering Laboratory of Rf Integration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798350318517

In order to meet the application requirements of RF front-end circuit integration, miniaturization and high efficiency, compared with the traditional concept of direct cascading of power amplifier and filter, this paper proposes a design method of co-designing high out-of-band rejection filter and power amplifier matching network, which matches the input impedance of the filter directly to the optimal output impedance of the drain of the output stage of the power amplifier, so that the filter network has both filtering and impedance transformation functions. By matching the input impedance of the filter directly to the optimal output impedance of the drain of the power amplifier output stage, the filter network here not only has the function of filtering but also has the function of impedance transformation. In order to verify the effectiveness and practicality of the method, a broadband miniaturized filtered power amplifier with integrated filtering characteristics is designed to operate in the 14-18 GHz satellite communication band by taking advantage of the high output power of GaAs pHEMT devices. Simulation results show that, under the premise of maximizing the output power and efficiency of the power amplifier, the gain is up to 23 dB, the input and output returns are below -15 dB, the minimum power added efficiency is 46%, the suppression of out-of-band signals reaches -30 dB, and the power suppression of the high harmonics reaches -50 dBc, which is a great improvement compared with the out-of-band suppression of conventional power amplifiers. © 2023 IEEE.

关键词： Efficiency

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A Compact Low-Loss Bi-directional Amplifier for Ku-band 8

A Compact Low-Loss Bi-directional Amplifier for Ku-band

引用

8th International Conference on Integrated Circuits and microsystems, ICICM 2023

作者： Lin, Jie Liao, Xiang Ying, Shu Hu, Shanwen Cai, Zhikuang Guo, Yufeng Nanjing University of Posts and Telecommunications College of Integrated Circuit Science and Engineering Nanjing China Anqing Normal University School of Electronic Engineering and Intelligent Manufacturing Anqing China Nanjing University School of Electronic Science and Engineering Nanjing China National and Local Joint Engineering Laboratory of Rf Integration and Micro-Assembly Technology Nanjing China

ISBN: (纸本)9798350318517

Conventional bi-directional amplifiers connect transceiver circuits through two T/R switches that are large in area and introduce some loss at high frequencies. In this paper, a compact low-loss bi-directional amplifier for Ku-band (receive: 12-13 GHz, transmit: 15.5-16.5 GHz) has been designed on a TSMC 65 nm 1P9M CMOS process and employs two triple-coil-coupled transceive matching network multiplexing transformers to connect transceiver circuits. When the circuit is in the transmitting state, the power amplifier achieves a 1 dB compression point of 6.321 dBm and the peak PAE is close 30%. When the circuit is in the receiving state, the low-noise amplifier boasts a remarkable in-band gain exceeding 25.7 dB, accompanied by a NF of less than 3.5 dB. The area of the triple-coil coupling transformer is approximately 200∗200 μ m2, which reducing the overall area of the bi-directional amplifier. The high-frequency insertion loss of the structure is about 1 dB, which is less than the 2 dB insertion loss of conventional switches at high frequencies. This design can be widely used in Ku-band phased array radars. © 2023 IEEE.

关键词： Insertion losses

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Double Dielectrics Enhancement on the Ldmos Using High-K Field Dielectric and Low-K Buried Dielectric

SSRN

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SSRN 2022年

作者： Yao, Jiafei Liu, Xin Sun, Mingshun Xu, Tianci Li, Man Chen, Jing Zhang, Maolin Zhang, Jun Guo, Yufeng Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

This paper investigates the double dielectrics enhancement LDMOS (DDE LDMOS) with high-k field dielectric and low-k buried dielectric. The analytical models of the potential and electric field, optimal breakdown voltage and drift doping concentration are established for this novel LDMOS. The validity of the analytical models is confirmed by the simulation results. Based on the analytical and simulate results, the modulation mechanism of the high-k field dielectric and low-k buried dielectric on the electric field and breakdown characteristics of DDE LDMOS are analyzed and compared. Compared to the conventional LDMOS, the specific on-resistance of DDE LDMOS is reduced by 19%, the breakdown voltage and figure of merit ( FOM ) of the DDE LDMOS can be improved by 62% and 222.4% when the permittivity of high-k field dielectric and low-k buried dielectric are 100 and 2. Meanwhile, the transfer characteristic, output characteristic, frequency characteristic and switching characteristic of the DDE LDMOS are also discussed. © 2022, The Authors. All rights reserved.

关键词： MOS devices

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