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High responsivity and fast response 8×8β-Ga_(2)O_(3)solar-blind ultraviolet imaging photodetector array

Science China(Technological Sciences) 2023年第11期66卷 3259-3266页

作者： SHEN GaoHui LIU Zeng TANG Kai SHA ShuLin LI Lei TAN Chee-Keong GUO YuFeng TANG WeiHua Innovation Center of Gallium Oxide Semiconductor(IC-GAO) College of Integrated Circuit Science and EngineeringNanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China Key Laboratory of Aerospace Information Materials and Physics(NUAA) MIITNanjing 211106China College of Physics MIIT Key Laboratory of Aerospace Information Materials and PhysicsKey Laboratory for Intelligent Nano Materials and DevicesNanjing University of Aeronautics and AstronauticsNanjing 211106China Advanced Materials Thrust Function HubThe Hong Kong University of Science and Technology(Guangzhou)Nansha 511458China Department of Electronic and Computer Engineering School of EngineeringThe Hong Kong University of Science and TechnologyHong Kong 999077China

In this work,an 8×8 Ga_(2)O_(3)solar-blind ultraviolet photodetector array is introduced for image sensing *** 2-in wafer-scaled Ga_(2)O_(3)thin film was grown by metalorganic chemical vapor deposition technique;and the photodetector array was fabricated through ultraviolet photolithography,lift-off,and electron-beam *** addition to the high solar-blind/visible rejection ratio of 104,every photodetector cell in the array has high performance and fast response speed,such as responsivity of 49.4 A W^(-1),specific detectivity of 6.8×10^(14)Jones,external quantum efficiency of 1.9×10^(4)%,linear dynamic range of 117.8 d B,and response time of 41 ms,respectively,indicating the high photo-response performance of the ***,the photodetector array displayed uniform responsivity with a standard deviation of~6%,and presented a sensing image of low chromatic aberration,owing to the high resolution of the photodetector *** a word,this work may contribute to developing Ga_(2)O_(3)-based optoelectronic device applications.

关键词： Ga_(2)O_(3) photodetector array imaging photo-response

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Complete Timing Model of ECSM Lookup Table for CMOS Inverter

Complete Timing Model of ECSM Lookup Table for CMOS Inverter

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International Conference on Integrated Circuits and microsystems (ICICM)

作者： Jiawei Wang Jingjing Guo Dongmin Zhao Zhikuang Cai College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China

In the early days, engineers used non-linear delay models (NLDM) to estimate the circuit delay information. However, the accuracy of NLDM lookup table (LUT) decreases with the continuous change of the process, which makes the delay estimation become a difficult problem. Therefore, the effective current source model (ECSM) is proposed. The ECSM is a LUT composed of input transition time (T R ) and load capacitance (C L ), which can save the threshold crossing point (TCP) of the output waveform to better estimate the delay. However, the timing model is needed to reduce re-presentations, due to the high cost of building the library of ECSM. In this work, we present a timing model of the complete ECSM LUT for a CMOS inverter. The timing model is divided into two cases with a total of five regions. The proposed timing model is further analyzed by judging the value of threshold crossing points’ voltage (V TCP ) and drain to source saturation voltage (V dsat ), and the model is simplified for different threshold crossing points. Compared with the simulation results of HSPICE, the model is accurate with a maximum error of 2.35% and a maximum average error of 0.45%, which reduces the repetitive simulation of HSPICE.

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Leaky Wave Antenna Based on Composite Right/Left Handed Half-mode Substrate Integrated Waveguide

Leaky Wave Antenna Based on Composite Right/Left Handed Half...

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Yangbin Jiang Leilei Liu Yangjun Hu Dingwei Jiang Minghong Chen National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China State Key Laboratory of Millimeter Waves Southeast University Nanjing Jiangsu China

In this paper, we propose a half-mode substrate integrated waveguide (HMSIW) leaky wave antenna (LWA) based on composite right/left handed (CRLH) transimission line (TL). The unit cell of the proposed antenna consists of two vertical slots on the microstrip and two metal vias. The equivalent series capacitance and the equivalent shunt inductance in the CRLH structure are realized by vertical slots and two vias, respectively. We simulated the unit cell and the proposed antenna. The antenna can achieve continuously wide beam scanning from backward to forward. The beam scanning angles from -50 degrees to 30 degrees.

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A 10GS/s 0.13um SiGe Track-and-Hold Amplifier with 38GHz Analog Bandwidth 10

A 10GS/s 0.13um SiGe Track-and-Hold Amplifier with 38GHz Ana...

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10th International Conference on microwave and Millimeter Wave technology, ICMMT 2018

作者： Shen, Yu Zhang, Yi Yang, Lei Li, Xiaopeng Liu, Zhonghua Zhang, Yin Guo, Yufeng National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology Nanjing210023 China College of Electronic and Optical Engineering College of Microelectronics Nanjing University of Posts and Telecommunications Nanjing210023 China State Key Laboratory of Millimeter Waves Nanjing210096 China Post-Doctoral Research Center JiangSu HengXin Technology Co. Ltd Yixing214222 China Nanjing Electronic Devices Institute China Nanjing GuoBo Electronics Co. Ltd China

ISBN: (纸本)9781538624166

In this paper, a bipolar track-and-hold amplifier(THA), designed in a 0.13um SiGe technology is presented. A novel output buffer is proposed to enhance the hold-isolation and the bandwidth. The spurious free dynamic range (SFDR) is larger than 53.8dB for 1-3GHz input frequency with a 0.6Vpp input signal. The input bandwidth up to 38GHz is realized with a sampling rate of 10GS/s. The total DC power consumption is 586mW with a supply voltage of -5V. The layout size is 339x210 um2. As compared to the advanced silicon-based THAs, this work features high speed, low total harmonic distortion (THD), good linearity and wide bandwidth. © 2018 IEEE.

关键词： Bandwidth

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A Thermo-mechanical Coupled 3D Crystal Plasticity Finite Element Model for CASTIN Solder Alloy

A Thermo-mechanical Coupled 3D Crystal Plasticity Finite Ele...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Yang Li Yujie Cheng Shanwen Hu Binbin Xu Lu Liu Zhikuang Cai The College of Integrated Circuit Science and Engineering National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China Nantong Institute of Nanjing University of Posts and Telecommunications Nantong China

As one of the fragile components in the package structure, solder joints are usually subjected to thermo-mechanical coupled loads. Therefore, it is essential to investigate the deformation behavior and constitutive model of solder joints for the reliability prediction of the whole packaging. As a kind of polycrystalline material, solder joints contain multiple grains with different orientations. As the electronic devices gradually decrease in size, the solder joints may only contain one or several grains, the conventional macro-phenomenological constitutive model is not able to describe the deformation at the grain scale caused by crystalline slip. In this paper, a finite element model on the basis of 3D crystal plasticity theory is proposed, in which the behavior of each grain is first investigated, and the overall behavior of the structure is obtained by calculating the average of all elements. Firstly, the models with 10, 40, and 100 grains are established to find out the influence of grains’ numbers on the overall behavior. Then, the strain rate jump experiments of CASTIN solder alloy are simulated using the appropriate model. The CASTIN solder alloy is stretched to 1.5% strain at strain rates of 10 -6 s -1 to 10 -2 s -1 under temperatures of -55°C to 125°C, respectively. A comparison is made between the simulation results and the experimental results, the parameters of the established model are obtained through matching the experiment curves, and the effect of the temperature on the parameters is analyzed. The model then is used to investigate the deformation response of CASTIN alloy under the thermo-mechanical cycle tests without changing these parameters. It can be found that the proposed model can give reasonable predictions of CASTIN alloy under thermo-mechanical coupled loads.

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Sic-on-Insulator Based Lateral Power Device and it' S Analytical Models

SSRN

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SSRN 2024年

作者： Yao, Jiafei Li, Ang Liu, Yuao Hu, Ziwei Li, Man Yang, Kemeng Zhang, Jun Chen, Jing Zhang, Maolin Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly technology Nanjing China Nantong Institute of Nanjing University of Posts and Telecommunications Nantong China

This paper proposes the concept of SiC-on-insulator (SiCOI) lateral power device and its analytical models. The SiCOI technology provides the dielectric isolation and improves the vertical breakdown. The analytical models provide the physic insight of the surface potential and electric field distributions for both full and partial depletion cases. The optimal breakdown voltage and doping concentration are deduced to analysis the breakdown mechanism qualitatively. The specific on-resistance in the drift region was also calculated to analysis the conduction characteristics. The influences of the structure parameters on the performances of the SiCOI lateral power device are investigated by the analytical model and numerical simulation. The analytical results of the proposed model are well agreement with the numerical results, confirming the validity of the proposed unified analytical model. Both of the analytical and numerical results provide the physic explanation and effective solution for optimizing the electric field and improving breakdown voltage for the SiCOI lateral power device. © 2024, The Authors. All rights reserved.

关键词： Electric breakdown

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Enhanced power transmission for on-road AGV wireless charging systems using a current-optimized technique

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Progress In Electromagnetics Research C 2019年 96卷 205-214页

作者： Zhang, Jin Chen, Dong Zhang, Chen School of Electronic and Information Engineering Jinling Institute of Technology Nanjing211169 China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing210023 China School of Electric Science and Engineering Nanjing University of Posts and Telecommunications Nanjing210023 China School of Electrical Engineering Southeast University Nanjing210096 China

This paper provides a sound wireless power transfer (WPT) recharging solution for onroad automated guided vehicle (AGV) system. In this solution, multiple transmitting coils serve as power transmitters (TXs), and a receiving coil in AGV serves as a power receiver (RX). The multiple TXs are along a straight track for dynamic charging to AGV. The circuit model of multiple-TX and single-RX WPT system is first constructed based on circuit theory (CT), and then current-optimized scheme based on Lagrangian multiplier method is proposed to tune the currents in multiple TXs to maximize the power delivered to the load (PDL). The equal current (EC Case) flowing through each TX is compared with the optimal current (OC Case). Through contrastive analysis, the OC Case shows its advantages in PDL. Finally, the theoretical analysis results are confirmed by the results of full-wave electromagnetic simulation. © 2019, Electromagnetics Academy. All rights reserved.

关键词： Electromagnetic simulation

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Investigation of Lateral Gallium Oxide MOSFET with Discrete Field Plate by Calibrated Numerical Simulation

Investigation of Lateral Gallium Oxide MOSFET with Discrete ...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Lei Wang Maolin Zhang Zeng Liu Lili Yang Shan Li Weihua Tang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Innovation Center for Gallium Oxide Semiconductor (IC-GAO) Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

The main barrier preventing the simulation design and optimization of wide bandgap semiconductor power devices is poor numerical convergence. Currently, the uncalibrated two-dimensional electric field distribution is the main foundation for the breakdown voltage optimization of gallium oxide power devices. This work achieves proper calibration of the current-voltage (I-V) characteristics as well as the breakdown voltage evaluation by enhancing the numerical method. An optimal set of structural parameters for a lateral gallium oxide MOSFET with a discrete field plate is designed using the suggested method. Thanks to the improved electric field profile, the breakdown voltage is increased by 19.7%, and on-state resistance did not degrade. This work resolves the wide-bandgap semiconductors' poor convergence problem and offers a workable strategy for the subsequent theoretical simulation and optimization of gallium oxide power devices.

关键词： Resistance MOSFET Gallium Photonic band gap Numerical simulation Numerical models Structural engineering

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A scalable model for on-chip spiral inductors by Space-mapping neural network

A scalable model for on-chip spiral inductors by Space-mappi...

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International Symposium on Antennas and Propagation (ISAP)

作者： Shiliang Huang Jie Lin Shu Ying Ling Gu Shanwen Hu Junjun Xue Zixuan Wang Zhikuang Cai Jiafei Yao Jun Zhang Yufeng Guo Nanjing University of Posts and Telecommunications Nanjing China Anqing Normal University Anqing China Anhui Silimicro Electronics Technology Limited Liability Company Hefei China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China

This paper presents a scalable model for on-chip spiral inductors utilizing the space-mapping neural network (SMNN), built upon an enhanced 1-π equivalent circuit model. To address the inductor drop observed at low frequencies, a series network consisting of two pairs of inductors and resistors is integrated into the 1-π equivalent circuit model. The topology of the SMNN is optimized using the global search capability of the particle swarm optimization (PSO) algorithm, which determines the optimal weights and thresholds for the SMNN. Compared with traditional neural network models, the proposed SMNN reduces the number of neurons required for mapping the input-output nonlinear relationship, leading to enhanced accuracy and reduced modeling time, which takes a mere 10 to 15 seconds.

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Laser Scribing of Graphene Oxide Using Bessel Beam for Humidity Sensing

Advanced Devices and Instrumentation

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Advanced Devices and Instrumentation 2023年 4卷

作者： Li, Ruo-Zhou Yan, Jing Qu, Ke Yu, Ying College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing210023 China National and Local Joint Engineering Laboratory of RF Integration and Micro Assembly Technology Nanjing University of Posts and Telecommunications Nanjing210023 China College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications Nanjing210023 China

Laser-scribed graphene oxide (GO) shows great promise for high-performance, cost-effective humidity sensors. However, when using the commonly employed Gaussian beam, the Rayleigh length is relatively short, leading to potential stability issues during large-area processing, especially when defocusing occurs. In this paper, we utilize a diffraction-free Bessel beam to one-step fabricate reduced graphene oxide (rGO) electrodes specifically designed for humidity sensing applications. The effects of defocusing and laser power on the line width and resistance of the fabricated electrodes are investigated, giving the optimal processing parameters for Bessel laser writing of GO. The line width, resistance, and sheet resistance of the rGO electrode are stable at a defocusing distance within ±1.00 mm. Defocusing also proves to be effective in reducing the ablation region during the fabrication process. The temperature and humidity responses of the electrodes are examined, focusing on those fabricated with typical defocusing settings, and the related mechanisms are discussed. Proof-of-principle rGO/GO/rGO humidity sensors are demonstrated, and were one-step fabricated using a Bessel beam with both focusing and defocusing settings. The corresponding humidity response results evidence that rGO humidity sensors can be fabricated using a Bessel beam, even in the defocusing cases. The investigation into the Bessel-beam-based laser fabrication technique offers promising prospects for rapid, flexible, and cost-effective production of graphene-based humidity sensors. Meanwhile, the study of defocusing may enhance the fabrication stability to withstand defocusing conditions effectively. Copyright © 2023 Ruo-Zhou Li et al.

关键词： Graphene

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