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Electromagnetically-induced-absorption-like ground state cooling in a hybrid optomechanical system

Chinese physics B 2025年第4期34卷 413-421页

作者： Yaoyong Dong Xuejun Zheng Denglong Wang Peng Zhao School of Electromechanical Engineering Guangdong University of TechnologyGuangzhou 510003China School of Mechanical Engineering and Mechanics Xiangtan UniversityXiangtan 411105China School of Physics and Optoelectronics Xiangtan UniversityXiangtan 411105China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research InstituteGuangzhou 510610China

We present a scheme for the electromagnetically-induced-absorption(EIA)-like ground state cooling in a hybrid optomechanical system which is combined by two-level quantum systems(qubits)and a high-Q optomechanical *** the weak qubit-cavity coupling,the system exhibits an EIA-like effect and this effect is caused by quantum destructive interference that is distinct from the conventional EIA effect driven by quantum constructive *** importantly,the EIA-like cooling mechanism can significantly enhance the cooling rate of the hybrid system,enabling the final phonon number beyond the classical cooling limit in the strong optomechanical coupling ***,the cooling effects of the EIA case is better than that of the normalmode splitting case under the same optomechanical coupling strength and qubit dissipation rate.

关键词： electromagnetically induced absorption ground state cooling optomechanics

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0.58 mΩs·cm2/523 v GaN Vertical Schottky Barrier Diode with 15.6 kA/cm2Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation

IEEE Electron Device Letters

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IEEE Electron Device Letters 2024年第6期45卷 964-967页

作者： Qi, Wei Zhou, Feng Ma, Teng Xu, Weizong Zhou, Dong Ren, Fangfang Chen, Dunjun Zhang, Rong Zheng, Youdou Lu, Hai Nanjing University School of Electronic Science and Engineering Nanjing210093 China China Electronic Product Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou511370 China

Achieving high-performance fully-vertical GaN devices on low-cost and large-scale foreign substrates are highly attractive for the development of device technology. In this work, by performing pulsed laser lift-off and laser annealing techniques, high-performance fully-vertical GaN Schottky barrier diodes (SBDs) with superior N-face ohmic contact characteristics are demonstrated. The resulting device exhibits low specific contact resistivity of 3.51×10-5Ω · cm2 and differential specific on-resistance of 0.58 mΩ· cm2, as well as intact anode Schottky contact. In particular, this device demonstrates robust electrothermal robustness, such as the largest surge current density of 15.6 kA/cm2 to date. Moreover, by implementing N-implanted termination, the breakdown voltage of the device is remarkably enhanced from 240 to 523 V, which is competitive with the state-of-the-art quasi-vertical SBDs. These results reveal the notable potential of pulsed laser lift-off/annealing combined with N-implanted termination for realizing fully-vertical devices. © 1980-2012 IEEE.

关键词： Anodes

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New Convenient Composite Probes With 0°/180° Hybrid Couplers For Near-field Scanning Measurements

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IEEE Sensors Journal 2025年第11期25卷 18982-18988页

作者： Wang, Lei Wang, Rui-Qi Luo, Chengyang Lu, Guoguang CEPREI Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China Shaanxi University of Science and Technology School of electronic information and artificial intelligence China

In this work, we propose two new convenient composite probes with 0°/180° hybrid couplers for near-field scanning measurements. The proposed probes (denoted as A and B) integrate a U-shaped loop as the driven element and a parallel U-shaped loop as the parasitic element, two different 0°/180° hybrid couplers, two interconnected vias, and a pair of 50 Ω strip-lines. The design leverages the driven and parasitic U-shaped loops to concurrently detect electric-field (E-field) and magnetic-field (H-field) components and improve detection sensitivity, thereby extending the probes' capability to capture a wider spectrum of electromagnetic fields. The integrated 0°/180° hybrid couplers enable precise differentiation and superposition of outputs from the driven loop, effectively isolating the E-field and H-field responses. Crucially, this architecture permits direct connectivity to oscilloscopes, eliminating dependence on vector network analyzers (VNAs) for electromagnetic component sensing. The design, simulation, measurement, and characterization of two Probes A and B are detailed. Measurement results demonstrate these probes' enhanced sensitivity and dual-field measurement capability. The ability of directly link to oscilloscopes, bypassing the need for a VNA, makes these probes highly suitable for practical interference source location testing. © 2001-2012 IEEE.

关键词： Electric field measurement

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IC-LOGO: A Custom Dataset and Benchmark for Integrated Circuit Logo Detection Task 6

IC-LOGO: A Custom Dataset and Benchmark for Integrated Circu...

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6th International Conference on Artificial Intelligence and Computer applications, ICAICA 2024

作者： Zhao, Yue Luo, Jun Wang, Zhizhe Zhang, Qiuzhen China Electronic Product Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9798350377255

In order to enable computers to automatically detect the logo information of Integrated Circuit (IC) images and assist users in searching for the required IC manufacturer information based on the logo images, this article conducted research and analysis on the existing public datasets in the field of logo detection, and found that the existing public datasets cannot meet the specific research and application needs of this article. Therefore, the Integrated Circuit Logo (IC-LOGO) image dataset is presented in this article. The dataset contains 971 internal logo images from 17 manufacturers and 2091 external logo images from 30 manufacturers. Furthermore, the logo images were precisely positioned and annotated. Finally, a benchmark containing 8 different object detection networks was used to test the IC-LOGO dataset. The results show that all detectors trained on the dataset could detect the region and category of LOGO precisely and robustly. © 2024 IEEE.

关键词： Image annotation

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Proton induced radiation effect of SiC MOSFET under different bias

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Chinese physics B 2023年第10期32卷 708-715页

作者：张鸿郭红霞雷志锋彭超马武英王迪孙常皓张凤祁张战刚杨业吕伟王忠明钟向丽欧阳晓平 School of Material Science and Engineering Xiangtan UniversityXiangtan 411105China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Electronic Product Reliability and Environmental Testing Research InstituteGuangzhou 510610China Northwest Institute of Nuclear Technology Xi'an 710024China

Radiation effects of silicon carbide metal–oxide–semiconductor field-effect transistors(SiC MOSFETs)induced by 20 MeV proton under drain bias(V_(D)=800 V,V_(G)=0 V),gate bias(V_(D)=0 V,V_(G)=10 V),turn-on bias(V_(D)=0.5 V,V_(G)=4 V)and static bias(V_(D)=0 V,V_(G)=0 V)are *** drain current of SiC MOSFET under turn-on bias increases linearly with the increase of proton fluence during the proton *** the cumulative proton fluence reaches 2×10^(11)p·cm^(-2),the threshold voltage of SiC MOSFETs with four bias conditions shifts to the left,and the degradation of electrical characteristics of SiC MOSFETs with gate bias is the most *** the deep level transient spectrum test,it is found that the defect energy level of SiC MOSFET is mainly the ON2(E_(c)-1.1 eV)defect center,and the defect concentration and defect capture cross section of SiC MOSFET with proton radiation under gate bias increase *** comparing the degradation of SiC MOSFET under proton cumulative irradiation,equivalent 1 MeV neutron irradiation and gamma irradiation,and combining with the defect change of SiC MOSFET under gamma irradiation and the non-ionizing energy loss induced by equivalent 1 MeV neutron in SiC MOSFET,the degradation of SiC MOSFET induced by proton is mainly caused by ionizing radiation *** results of TCAD analysis show that the ionizing radiation damage of SiC MOSFET is affected by the intensity and direction of the electric field in the oxide layer and epitaxial layer.

关键词： proton silicon carbide metal–oxide–semiconductor field-effect transistor(SiC MOSFET) degradation defect ionization radiation damage

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Influence of temperature on the total ionizing dose effects in Al2O3-doped optical fibers

Influence of temperature on the total ionizing dose effects ...

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2023 Advanced Fiber Laser Conference, AFL 2023

作者： Ma, Teng He, Yujuan Lei, Zhifeng Zhang, Hong Peng, Chao Zhang, Zhangang Liu, Yuebo Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou511370 China

ISBN: (纸本)9781510677661

This article investigates the influence of temperature on the total ionizing dose (TID) effects in optical fibers. Radiation induced attenuation (RIA) spectra at 1310 nm were measured in G652, OM, PM1016-C, and homemade B1-R fibers during and after γ-irradiation at different temperatures. The B1-R fibers were doped with varying Al2O3 content in their core and coating layers. Experimental results show that the B1-R fibers have significant lower losses compared with the other three fibers. At a temperature of 25° and a TID does of 50 kGy, the B1-R fiber showed an RIA of only 1.35 dB/Km, while the other three fibers exhibit a minimum loss exceeding 6.44 dB/Km. Furthermore, the B1-R fiber withstood an irradiation does 100 times higher than other optical fibers. For a fixed temperature, the attenuation in B1-R fibers recovered quickly after irradiation, reaching their minimum values approximately 15 days post-irradiation, whereas the other three optical fibers required more than 25 days to recover. This study also delves into the underlying mechanisms contributing to the radiation resistance of B1-R optical fibers. The findings presented in this work offer critical insights for the development of high-performance, radiation resistant fibers, rendering them suitable for deployment in challenging deep space environments characterized by intense radiation conditions. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Irradiation

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Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation

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Chinese physics B 2023年第2期32卷 525-534页

作者：张鸿郭红霞雷志锋彭超张战刚陈资文孙常皓何玉娟张凤祁潘霄宇钟向丽欧阳晓平 School of Material Science and Engineering Xiangtan UniversityXiangtan 411105China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research InstituteGuangzhou 510610China Northwest Institute of Nuclear Technology Xi'an 710024China

Experiments and simulation studies on 283 MeV I ion induced single event effects of silicon carbide(SiC) metal–oxide–semiconductor field-effect transistors(MOSFETs) were carried out. When the cumulative irradiation fluence of the SiC MOSFET reached 5×10^(6)ion·cm^(-2), the drain–gate channel current increased under 200 V drain voltage, the drain–gate channel current and the drain–source channel current increased under 350 V drain voltage. The device occurred single event burnout under 800 V drain voltage, resulting in a complete loss of breakdown voltage. Combined with emission microscope, scanning electron microscope and focused ion beam analysis, the device with increased drain–gate channel current and drain–source channel current was found to have drain–gate channel current leakage point and local source metal melt, and the device with single event burnout was found to have local melting of its gate, source, epitaxial layer and substrate. Combining with Monte Carlo simulation and TCAD electrothermal simulation, it was found that the initial area of single event burnout might occur at the source–gate corner or the substrate–epitaxial interface, electric field and current density both affected the lattice temperature peak. The excessive lattice temperature during the irradiation process appeared at the local source contact, which led to the drain–source channel damage. And the excessive electric field appeared in the gate oxide layer, resulting in drain–gate channel damage.

关键词： heavy ion silicon carbide metal–oxide–semiconductor field-effect transistors(SiC MOSFET) drain–gate channel drain–source channel single event burnout TCAD simulation

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Research on the contamination failure mechanism of HgCdTe IRFPA detectors 3

Research on the contamination failure mechanism of HgCdTe IR...

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3rd International Computing Imaging Conference, CITA 2023

作者： Liu, YueBo Yan, JiaHui Liao, WenYuan Niu, Hao Chen, XiYu Wang, HongYue Lai, CanXiong Yang, ShaoHua Reliability Physics and Application Technology of Electronic Component Key Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou511370 China

ISBN: (纸本)9781510671409

HgCdTe infrared focal plane array imaging detectors have been widely used in a variety of fields such as night vision surveillance, remote sensing mapping and astronomical observation. In recent years, with the development of semiconductor manufacturing processes, the array size of HgCdTe IR focal plane array imaging detectors has gradually increased, and the preparation process has become increasingly complex. During the preparation process, impurity ions can enter the HgCdTe material and cause degradation of device performance or even device failure. This work investigates the distribution of impurity elements in HgCdTe IR focal plane array detectors prepared by both processes and the mechanism by which impurity elements cause device failure. © 2023 SPIE.

关键词： Secondary ion mass spectrometry

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Effect of trapped charges and ionic charges distribution on n+-on-p HgCdTe photodiode properties

Effect of trapped charges and ionic charges distribution on ...

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2023 Applied Optics and Photonics China: AI in Optics and Photonics, AOPC 2023

作者： Liu, Yuebo Qiu, Qiuling Liao, Wenyuan Niu, Hao Yan, Jiahui Dai, Zongbei Ma, Teng Yang, Shaohua Lai, Canxiong Reliability Physics and Application Technology of Electronic Component Key Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou511370 China

ISBN: (纸本)9781510672383

The HgCdTe Photodiode is the most basic and important unit of HgCdTe IRFPA (Infra-red focal plane array) detectors, which have been widely used in the fields of security, fire protection, remote sensing and deep space detection. For HgCdTe IRFPA, the trapped charges of the HgCdTe material and the ionic charges introduced during the preparation process are the factors, other than environmental stress, that have the greatest impact on IRFPA performance. The trapped charges come from the trap energy level in the HgCdTe material, which exist during the crystal growth process and can be improved by adjusting the growth conditions, but it cannot be completely avoided. The ionic charges introduced during the process are generally concentrated at the interface and surface of the HgCdTe material, which can be reduced by process improvement, but cannot be completely avoided. In order to analyze the mechanism of multiple charges affecting the HgCdTe detector performance, a type of n+ -on-p HgCdTe Photodiode is selected as the object of this work, and the effects of the concentration and distribution of charges on the carrier distribution and energy band structure of the n+ -on-p HgCdTe are analyzed in detail. The introduction of additional net charge relative to an ideal n+ -on-p HgCdTe Photodiode leads to the aggregation or scavenging of local carriers and affects the energy band structure near the charge, creating additional potential barriers or potential wells, which is likely to cause device degradation. On this basis, the optoelectronic properties of the HgCdTe Photodiode have been investigated under infrared radiation at a wavelength of 9.5 μm, as the light I-V characteristics, the dynamic resistance-voltage characteristics, band structure and carrier density distribution. According to the results of this work, the quasi-fixed charges introduced by defects or contamination will directly affect the generation rate of photogenerated carriers and affect the I-V and R-V cha

关键词： Infrared radiation

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Two-dimensional Si photonic crystal waveguide branch for 850 nm and 950 nm wavelengths

Two-dimensional Si photonic crystal waveguide branch for 850...

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2023 Applied Optics and Photonics China: AI in Optics and Photonics, AOPC 2023

作者： Liu, Yuebo Huang, Yixiong Liao, Wenyuan Niu, Hao Yan, Jiahui Yang, Shaohua Ma, Teng Wang, Hongyue Lai, Canxiong Reliability Physics and Application Technology of Electronic Component Key Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou511370 China

ISBN: (纸本)9781510672383

The waveguide branch plays an important role in integrated photonic circuits by dividing input light into two or more output lights, thereby facilitating optical power distribution and mode selection. Ordinary optical waveguides used in waveguide branches suffer from excessive optical loss and narrow branch angles, limiting their effectiveness in mode selection among other problems. Photonic crystals are constructed by arranging macroscopically homogeneous dielectric (or metallic) materials into periodic arrays, with carefully designed internal defects that provide them with frequency-selective and spatial properties. In this study, a silicon-based wide-angle waveguide branch composed of two-dimensional photonic crystals has been successfully created. The branch is capable of separating two wavelengths of light, namely 850 nm and 950 nm, by adjusting the positions of silicon cylinders in the two-dimensional photonic crystal with the purpose of optimizing optical power at different wavelengths. The silicon-based wide-angle waveguide branch is expected to be employed in multimode optical communication systems. Its utilization will contribute towards the reduction in size and complexity of integrated optical communication systems, while enhancing system reliability. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Photonic crystals

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