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2024 Asia-Pacific Conference on Software Engineering, Social Network Analysis and Intelligent Computing, SSAIC 2024

作者： Lin, Hai Dong, Xianshan Su, Wei Huang, Qinwen Tomar, Agam Jinan University School Of Mechanics And Construction Engineering Guangzhou510632 China China Electronic Product Reliability And Environmental Testing Research Institute Sci. And Technol. On Reliability Phys. And Application Technology Of Electronic Component Laboratory Guangzhou510610 China Moe Key Lab Of Disaster Forecast And Control In Engineering Guangzhou510632 China Faculty Of Engineering And Mathematical Sciences University Of Western Australia Australia

ISBN: (纸本)9798350393682

In order to discuss the influence of the number of sheets on acceleration and frequency curve of sample surface, the finite element model of clamp, SOP sample and metal sheet is firstly established with Solidworks. Different number of sheets are laid on the surface of SOP sample. Then changing the number of the paper sheets, harmonic response analysis is converted based on modal analysis. The influence of different number of sheet on acceleration and frequency curve is discussed. The results show the relation between acceleration-frequency curve of different thickness of paper, which provides reference for packaging design. © 2024 IEEE.

关键词： Sheet metal

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Effect of the Off State/Half-On State/On State Electrical Stresses on the reliability of Packaged D-Mode GaN/AlGaN HEMTs

Effect of the Off State/Half-On State/On State Electrical St...

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International Conference on (ICEPT) electronic Packaging technology

作者： Dongsheng Zhao Lijuan Wu Yijun Shi Qingzong Xiao Guoguang Lu Zhiyuan He Liang He Zigui Tu Jie Yuan School of Physical and Electronic Changsha University of Science and Technology Changsha China Application of Electronic Component Laboratory CEPREI The Science and Technology on Reliability Physics Guangzhou China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

In this study, different typical electrical stresses (ES) were applied to the depletion mode GaN/AlGaN high electron mobility transistors (HEMTs) to simulate the application scenarios in real production and life. By applying three kinds of typical electrical stress, we observed the device static obvious changes in the electrical parameters are as follows: (1) Compared with the original device, the threshold voltage VTH of the device has obvious left drift, and the transconductance and Rds,on decrease under the Off State electrical stress; (2) Under the Half-On State/On State electrical stress, the threshold voltage of the device is positively skewed, the on-resistance Rds,on increases, and the saturation leakage current Idsat decreases significantly. The experiments reveal the dependence of threshold voltage (VTH), peak transconductance (Gmmax) and saturation leakage current (Idsat) on different stress modes, which provides an intentional reference for the quality and reliability of subsequent GaN/AlGaN HEMTs practical production applications.

关键词： Degradation Charge carriers Production HEMTs Threshold voltage Leakage currents MODFETs

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The Effects of RF Power and Cavity Structure on the Plasma Discharge Characteristics of RPS

The Effects of RF Power and Cavity Structure on the Plasma D...

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2023 International Conference on electronics and Devices, Computational Science, ICEDCS 2023

作者： Lin, Hai Su, Wei Chen, Ming Liu, Renhuai Jinan University School of Mechanics and Construction Engineering Guangzhou510632 China China Electronic Product Reliability and Environmental Testing Research Institute Sci. and Technol. on Reliability Phys. and Application Technology of Electronic Component Laboratory Guangzhou510610 China Moe Key Lab of Disaster Forecast and Control in Engineering Guangzhou510632 China

ISBN: (纸本)9798350343038

In this paper, a two-dimensional model of plasma diffusion in remote plasma source discharge chamber is established by COMSOL plasma module. The electron density and electron temperature distributions inside the discharge cavity were obtained by adjusting the thickness of alumina coating and the magnitude of RF power parameters. Based on the results, the authors discuss the effects of different alumina coating thickness and RF power on the electron density and electron temperature inside the discharge cavity, which provide theoretical guidance for the subsequent optimization of the internal structure of the discharge cavity and the discharge parameters. © 2023 IEEE.

关键词： Carrier concentration

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Study on the Mechanism of High Power Microwave Radiation Effect of GaN LNA

Study on the Mechanism of High Power Microwave Radiation Eff...

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International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications (MAPE)

作者： Min Liu Zongqi Cai Li'an Bian Anru Lv Houlu Tang Yiqiang Chen Guoguang Lu School of Physical and Electronic Science Changsha University of Science&Technology and CEPREI Guangzhou China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou China

ISBN: (数字)9798331533922

ISBN: (纸本)9798331533939

In this paper, a high-power microwave resonant cavity is designed and used to build a high-power microwave radiation experimental system, and the high-power microwave radiation interference effect of GaN low-noise amplifier is studied. Unlike lots of previous papers whose research focuses on the high-power microwave injection damage effects of RF front-end devices, this paper proposes a simple high-power microwave radiation testing system, which can generate a high-power microwave radiation field of 100kV/m under continuous wave and pulse working conditions. The gain of GaN LNA decreases with the increase of high-power microwave radiation field strength, mainly due to the vertical high-power microwave radiation equal to the injection power to the input port of LNA, which causes saturation of the LNA, and reduces its linearity and amplification ability for weak signals. This experimental system greatly reduces the high cost, difficulty, and safety requirements of traditional high-power microwave effect systems. It has certain practical value for conducting high-power microwave radiation experiments on digital circuits such as MCU and FPGA, as well as analog circuit components such as limiters and amplifiers.

关键词： Microwave antennas Linearity Interference Microwave communication Microwave circuits Microwave amplifiers Safety Field programmable gate arrays Digital circuits Microwave propagation

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A Novel Learning Approach to MIMO Networked Control Systems with Uncertain Parameters

A Novel Learning Approach to MIMO Networked Control Systems ...

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Prognostics and System Health Management Conference (PHM-Qingdao)

作者： Hanguang Jia School of Automation Science and Engineering South China University of Technology National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component Guangzhou China

This paper proposes a new learning approach to solve control design problems involving uncertain parameters in MIMO networked control systems. This approach combines neural network technology with control system modeling in real-time through learning and adaptation of data, thereby achieving stability and optimization of network-based control systems. The authors first establish a network-based control model and then improve it by replacing the linear parameters with nonlinear ones. To ensure real-time and stable communication between devices, this method also uses adaptive iterative learning control (AILC) technology and error feedback control technology. A network-based control system is used to verify the effectiveness of the proposed approach. The results show that this approach is effective in achieving sufficient communication between devices, adapting to uncertain parameters, and improving control performance.

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Research on IC-LOGO Extraction Algorithm Based on Deep Semantic Segmentation Network

Research on IC-LOGO Extraction Algorithm Based on Deep Seman...

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IEEE International Conference on Artificial Intelligence and Computer applications (ICAICA)

作者： Yue Zhao Mingfeng Guan Jun Luo Qiuzhen Zhang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China Testing Center of Electronic Components China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (数字)9798350377255

ISBN: (纸本)9798350377262

Considering the characteristics of the logo and character areas being intertwined, along with the variability in size and irregularity in shape of logos within integrated circuit (IC) identification images, this paper propose a logo extraction algorithm based on a deep semantic segmentation network. Initially, preprocessing and data augmentation techniques are employed to facilitate the creation of an IC identification dataset, alongside the establishment of a semantic segmentation dataset specifically for the LOGO area. Subsequently, network models including DeepLabv3+, U-Net, PSPNet, and HRNet are trained and validated to identify the optimal model for IC logo extraction. The experimental results indicate that the deep semantic segmentation network demonstrates effective segmentation performance in the extraction of integrated circuit logos, with the HRNet model achieving high segmentation accuracy and an average intersection-over-union ratio of 80%.

关键词： Accuracy Shape Semantic segmentation Computational modeling Termination of employment Computer applications Inspection Feature extraction Data augmentation Integrated circuit modeling

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A Comparative Study between Negative & Positive Bias Temperature Instability of Commercial nano-MOSFETs Using Voltage Step Stress Technique 5

A Comparative Study between Negative & Positive Bias Tempera...

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2022 5th International Conference on Power electronics and Control Engineering, ICPECE 2022

作者： Li, Zhigang Wei, Qinru Gao, Rui Lin, Xiaoling Huang, Yun School of Electronic Engineering and Automation Hefei University of Technology China Natl. Key Lab. of Sci. and Technology on Reliability Physics and Application of Electronic Component The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology China

Bias temperature instability (BTI) has been one of the most common and also severe aging mechanisms in MOSFETs. In this work, a comparative study between NBTI and PBTI of commercial nano-MOSFETs has been conducted using the voltage step stress (VSS) technique, which is implemented by applying multiple constant voltage stress (CVS) continuously on a single device. Aging parameters are extracted for both NBTI and PBTI from a single device using the VSS technique, and the lifetime under room temperature is predicted. This work is of potential use for BTI investigation of commercial nano-MOSFETs in terms of both test efficiency and affordability. © Published under licence by IOP Publishing Ltd.

关键词： Negative bias temperature instability

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Fault Prediction of DC-DC Devices Based on Deep Belief Network

Fault Prediction of DC-DC Devices Based on Deep Belief Netwo...

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International Conference on Sensing, Diagnostics, Prognostics, and Control (SDPC)

作者： Pengfei Yu Jiao Wang Junliang Wan Qiang-ming Cai Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component Guangzhou China China Electronic Products Reliability and Environmental Test Institute Guangzhou China School of Information Engineering Southwest University of Science and Technology Mianyang China

ISBN: (数字)9798350388855

ISBN: (纸本)9798350388862

Fault prediction is an important research field for power supply status management. Choosing an appropriate algorithm has a significant impact on the effectiveness of prediction. This article uses Deep Belief Network (DBN) to predict the device efficiency degradation of an isolated flyback DC-DC converter. Deep Belief Network (DBN) can be seen as a stack of a series of Restricted Boltzmann Machines (RBMs). The final prediction error (RMSE) is 0.00039. The results indicate that DBN has a relatively small error in predicting device efficiency degradation in DC-DC devices. The advantage of DBN is that DBN can perform fault prediction on complex power systems without establishing a physical model. It is convenient to research fault prediction only based on mathematical models.

关键词： Degradation Performance evaluation Deep learning Accuracy Power supplies DC-DC power converters Predictive models Prediction algorithms Mathematical models Sensors

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A Fault Diagnosis Method for Power electronic Circuits Based on GADF Coding and Channel Split Residual Network

A Fault Diagnosis Method for Power Electronic Circuits Based...

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International Conference on Sensing, Diagnostics, Prognostics, and Control (SDPC)

作者： Linghui Meng Jinyang Xie Zhenwei Zhou Yiqiang Chen Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China School of Electrical Engineering Beijing Jiaotong University Beijing China

ISBN: (数字)9798350388855

ISBN: (纸本)9798350388862

With the objective to achieve an accurate diagnosis of commonly encountered fault problems in power electronic circuits and to prevent the occurrence of catastrophic failures, a soft fault diagnosis model for dc-dc converter based on the gram angle difference filed (GADF) and the channel split residual network (CSRN) is proposed. Firstly, the original fault data is coded by GADF to generate the fault data set. Secondly, channel split preprocessing (CSP) and Darwinian selection mechanism (DSM) are introduced to enhance the residual network and further construct the CSRN. CSP emphasizes the important channel features in the fault feature images by achieving a brute-force enhancement of the channel information and highlighting subtle features. DSM retains the key features and removes the secondary features during network training. The GADF-CSRN diagnosis model proposed in this paper is verified by the fault data collected from a dc-dc converter. The result showed that a diagnosis accuracy of 97.92% is achieved, surpassing the accuracy of conventional method by at least 1.85%, while exhibiting better noise resistance.

关键词： Fault diagnosis Training Resistance Accuracy DC-DC power converters Power electronics Sensors Circuit faults Integrated circuit modeling Residual neural networks

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Investigation of Heavy-Ion Induced Degradation and Catastrophic Burnout Mechanism in Sic Diode

SSRN

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SSRN 2024年

作者： Zhang, Hong Peng, Chao Ma, Teng Zhang, Zhan-Gang He, Yu-Juan Li, Bin Lei, Zhi-Feng Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510610 China School of Microelectronics South China University of Technology Guangzhou510610 China

Irradiation experiment and simulation of 205-MeV Ge ion and 283-MeV I ion were used to analyze the single event leakage current (SELC) and the single event burnout (SEB) mechanism of SiC diode. Under two selected heavy ion irradiations, the ampere-magnitude pulse current were generated along with the occurrence of SEB. The SEB area was found to cover the anode metal, epitaxial layer and substrate in microscopic analysis, which resulted in damage to the forward and reverse characteristics of device. Devices were irradiated by 205-MeV Ge ion with a fluence of 5×106 n·cm-2, under 200 V and 300 V reverse bias voltages, the breakdown voltage were degraded by 70% and 82% respectively. The anode contacts of SELC devices had local fractures and displacements, which led to the degradation of breakdown characteristics. Combined Monte Carlo simulation and TCAD simulation, the SEB critical temperature appeared near the anode contact firstly when the two selected heavy ions were incident. When the two selected heavy ions were incident from Schottky and Ohmic contacts at a bias voltage of 200 V, excessive temperature in local areas and temperature differences between different anode materials caused the fractures and displacements of anode contact. © 2024, The Authors. All rights reserved.

关键词： Heavy ions

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