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13th International Conference on Quality, reliability, Risk, Maintenance, and Safety Engineering (QR2MSE 2023)

作者： X. Zhang X. Ling R. Gao Science and Technology on Reliability Physics and Application of Electronic Component Laboratory 110 DongGuangZhuang Road Guangzhou People's Republic of China

ISBN: (数字)9781839539275

In order to study the reliability of bonding wire under the condition of humidity environment, a testing structure chip was designed and three samples were subjected to humid test at 85°C/85% RH. During the experiment, all three samples showed an increase in leakage current. Through on-site observations, it was found that the leakage current occurred initially, when the experiment continued, the test structure failed due to the detachment of bonding wires from the bonding pad. The failure analysis showed that the surface of the passivation layer between adjacent aluminium pads was covered with impurities, including carbon (C), sodium (Na), aluminium (Al), tungsten (W), and chlorine (Cl) elements. The presence of these conductive elements resulted in leakage between two adjacent aluminium pads on the chip surface that had different electronic potentials. The detachment of bonding wires from the bonding pad is attributed to a chemical reaction caused by vapors. This reaction corrodes the metal aluminium on the bonding pad, leading to the formation of aluminium oxide, causing the gold wire to detach from the pad, and the lifetime of the bonding wire solder joints has been calculated.

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Comparative analysis of Degradation of SiC MOSFET Power Module with Different Proportions of Al/Cu Buffer under Power Cycling

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IEEE Transactions on components, Packaging and Manufacturing technology 2025年

作者： Mei, Yunhui Zhang, Songmao Chen, Yuan Li, Longnv Li, Daohang Pei, Yongqi Wang, Lu Tiangong University School of Electrical Engineering Tianjin Key Laboratory of Intelligent Control of Electrical Equipment Tianjin300387 China China Electronic Product Reliability and Environmental Testing Research Institute National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component Guangzhou511370 China Tiangong University School of Electrical Engineering Tianjin300387 China

Due to the mismatch in thermal expansion coefficient (CTE) between the SiC chip and the bonding wire, there is a sever thermal-mechanical stress at the bonding interface, causing a significant reduction in the reliability of the bonding wire. By using sintered silver to connect an Al/Cu buffer layer at the top of the chip, the mismatch in CTE between the bonding wire and the chip can be improved, greatly enhancing the reliability of the bonding wire. The integration of the buffer layer with Ag sintering technology significantly improves the reliability of power modules and enhances power density. Furthermore, the buffer layer increases the thermal capacity, thereby reducing the operating temperature of the semiconductor device. In this study, the effects of different Al/Cu stress buffer layers with different proportions on the reliability of the single-sided molded SiC power module with Al bonding wire were investigated through sub-second power cycling tests, and the failure modes of the bonding wire were characterized. The results show that the failure point of the bonding wire in the module with an Al/Cu stress buffer layer is located at the cracking of the bonding wire heel. Among the 10μm-Al/40μm-Cu buffer layers with good electrical conductivity, the module with this buffer layer has a longer lifetime. © 2025 IEEE. All rights reserved.

关键词： Sintering

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A Wideband Low-Noise Amplifier for 5G and Satellite Communication

A Wideband Low-Noise Amplifier for 5G and Satellite Communic...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Feng-Yuan Mao Zhi-Jian Chen Bin Li Zhao-hui Wu Quansheng Guan Shaowei Liao Xiaoling Lin School of Microelectronics South China University of Technology Guangzhou Guangdong China Application of Electronic Component Laboratory The Science and Technology on Reliability Physics China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou Guangdong China

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

This paper presents an 18.5-32.5 GHz low-noise amplifier (LNA) in 0.1-μm Gallium Nitride (GaN) process for 5G base station applications. Transmission lines are introduced between decoupling capacitors to increase the isolation of RF choke. A parallel RC network is used in the last stage to improve wideband output return loss. The proposed LNA shows a peak gain of 23.2 dB with a 3-dB bandwidth from 18.5 to 32.5 GHz. The in-band noise figure (NF) is 0.65-0.9 dB. The input return loss and output return loss are both better than 10 dB. The LNA consumes 290mW and occupies a compact chip area of 2.2 ×1.3 mm 2 .

关键词： Radio frequency Low-noise amplifiers Noise figure Power transmission lines 5G mobile communication Gallium nitride Inductors

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Vias electromigration lifetime reliability evaluation by using focus ion beam method

Vias electromigration lifetime reliability evaluation by usi...

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electronics Packaging technology Conference (EPTC)

作者： Zhang Xiao Wen Lin Xiao Ling Zongbei Dai Gao Rui Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9798350398861

The FIB (Focus Ion Beam) Construction analysis is widely used in FA field, such as evaluating process limitations, debugging, and root cause demonstration. In this paper, we describe the reliability check method of the via by using FIB. Based on the electromigration (EM) test of the vias, the reliability check method of the vias is studied through the influence of void area ratio in the via on the EM lifetime of the via. The results showed that under different operating conditions, the same void area ratio has almost the same influence on the EM lifetime, and with the increase of void area ratio in the via, the EM lifetime of the via decreases, when the lifetime decreases by 20%, the corresponding void area ratio is about 12%, which can be used as the check criteria of the via.

关键词： Electromigration Debugging Lifetime estimation reliability Ion beams electronics packaging

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Effect of Residual Stress After Reflow Soldering of Ball Grid Array Mixed Solder Joint on Thermal Cycling reliability

Effect of Residual Stress After Reflow Soldering of Ball Gri...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Fangzhou Chen Jiahao Liu Jianyu Wu Hao Zhao Hui Xiao Tao Lu Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Guangzhou China Reliability Research and Analysis Center Ceprei Laboratory China Electronic Product Reliability and Environmental Testing Guangzhou China

ISBN: (数字)9798350329988

ISBN: (纸本)9798350329995

This study investigates the influence of residual stress after reflow soldering on the thermal cycling of a ball grid array (BGA). The devices were analyzed after thermal cycling using methods such as macroscopic morphology observation and microscopic structure evolution. The residual stress and strain of an Sn63Pb37/Sn3.0Ag0.5Cu mixed BGA structure were obtained by applying the reflow soldering temperature profile through finite element simulation. Subsequently, temperature cycling loads were applied to the BGA package model after reflow soldering. The thermal fatigue life of the BGA solder joints was predicted using the Darveaux fatigue model based on the strain energy damage. The results showed that considering the residual stress after reflow soldering in the simulation, the equivalent plastic strain was relatively large. The maximum stress was located at the corners where the solder joints contacted the PCB and chip. Microscopic cracks were formed on the interface at the chip-end in critical solder joints. The life prediction indicated that the relatively high residual stress generated during the reflow soldering process had negligible effect on the thermal fatigue performance of the hybrid BGA solder joints.

关键词： Semiconductor device modeling Fatigue Residual stresses Finite element analysis Thermal analysis reliability Plastics Thermal stresses Reflow soldering Strain

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Fault Diagnosis of Avionics System Based on Improved CNN and BiLSTM 23

Fault Diagnosis of Avionics System Based on Improved CNN and...

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Proceedings of the 2023 6th International Conference on Algorithms, Computing and Artificial Intelligence

作者： He Li Danni Hong Zhenwei Zhou Xiangning Li Junbin Liu Guangzhou Institute of Technology Xidian University China and China Electronic Product Reliability and Environmental Testing Institute China Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Institute China School of Mechano-Electronic Engineering Xidian University China

ISBN: (纸本)9798400709203

This paper presents a novel approach for diagnosing faults in aerospace systems by leveraging the power of Word2vec to transform text data into word vectors. Using improved Convolutional Neural Network(CNN) and bi-directional LSTM models to extract fault feature information from the input data, introducing an attention mechanism to focus more on key feature information in the data, and employing a dropout regularization method to prevent the model from being overfitted. Our model considers local features, as well as contextual information, which fully extracts the feature information of the text to classify the fault data. Compared with other methods, the proposed method outperforms other techniques and significantly reduces the manual dependence of fault classification, saves the troubleshooting time of maintenance personnel, and achieves the optimum in accuracy, recall and f1-score performance indicators, which demonstrates the effectiveness of our approach.

关键词： Avionics system

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Vibration reliability Analysis of the Gold Wire Leads of MEMS Inertial Devices

Vibration Reliability Analysis of the Gold Wire Leads of MEM...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Yingyu Xu Chunhua He Qinwen Huang CEPREI Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China Guangdong University of Technology School of Computer Guangzhou China

ISBN: (数字)9798350329988

ISBN: (纸本)9798350329995

With the rapid development of the Internet of Things (IoT), MEMS inertial devices are being employed for various applications such as in smart homes, unmanned aerial vehicles, and aerospace. The MEMS inertial devices are exposed to harsh vibration environments, and the deformation of the internal bonding wire may cause reliability issues such as short circuits and fracture failures. The reliability of the gold wire leads of MEMS inertial devices in practice is theoretically analyzed to study the failure mechanisms. The failures caused by the resonance of the wire leads attributed to the mechanical vibration at different temperatures are studied by establishing finite element method models, and the inherent frequency and stress distribution of the wire lead are obtained. The root of the wire lead has the highest stress, and it is the weakest link. Further, the reliability of the wire lead can be improved by increasing its diameter or shortening its length.

关键词： Vibrations Micromechanical devices Gold Simulation Resonant frequency reliability theory Lead reliability engineering Wire Stress

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Characterization of contamination degradation of mems accelerometer comb structures

Characterization of contamination degradation of mems accele...

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IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

作者： Jinchuan Chen Xiao Wen Yingyu Xu Qinwen Huang Wanchun Ren Chunhua He Southwest University of Science and Technology Mianyang China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China School of Computer Guangdong University of Technology Guangzhou China

ISBN: (数字)9798350359831

ISBN: (纸本)9798350359848

The effect of organic contamination on the sensitive comb structure of accelerometers in microelectromechanical systems (MEMS) is hardly involved in the original MEMS reliability study, because the existing technology can guarantee chip packaging in the absence of contamination, but with the advancement and popularity of multi-chip packaging technology, some chip devices may have organic substances volatilised and have an effect on the strength of the comb structure of accelerometer devices, thus affecting the service life of the devices. However, with the progress and popularity of multi-chip packaging technology, some of the chip devices may have volatilisation of organic substances, which may affect the strength of the acceleration sensor comb, and thus the service life of the device. In this paper, the theoretical derivation and experimental verification method to complete the study, and in the organic pollution test, organic substances will mainly have an impact on the strength of the comb structure of the acceleration sensor, so this paper focuses on the comb structure before and after the organic pollution of the strength of the change. The results of the experimental study show that the strength of the comb structure of the MEMS device decreases to a certain extent after the contamination compared with that before the contamination. This research result provides a theoretical basis for finding the failure inducing factors in the MEMS failure mode and predicting the device life.

关键词： Micromechanical devices Accelerometers Microelectromechanical systems Degradation Pollution Nanoelectromechanical systems Life estimation

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Effects of Porosity on Thermal Resistance Aging at Submicron Silver Interfaces

Effects of Porosity on Thermal Resistance Aging at Submicron...

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International Conference on (ICEPT) electronic Packaging technology

作者： Jian Wang Mowen Zhang Chao Yang Zhiyuan He Zhiwei Fu Jia-Yue Yang School of Energy and Power Engineering Shandong University Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Jinan China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China School of Energy and Power Engineering Shandong University Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou China School of Energy and Power Engineering Shandong University Optics & Thermal Radiation Research Center Institute of Frontier and Interdisciplinary Science Shandong University Jinan China

The thermally conductive silver adhesive is widely used as a thermal interface material for thermal management of electronic device packaging. In engineering applications, the evolution of holes inside the silver adhesive interface seriously affects its service life. In this paper, we designed high-temperature accelerated aging experiments for submicron silver adhesive interfaces. The evolution of the pores during interfacial aging was characterized by X-ray scanning and scanning electron microscopy and counting the porosity. The temperature fields of interfaces with different porosities were simulated using finite element simulation. Both experimental and simulation results show that the increase in porosity accelerates the aging of the silver-glue interface. When the porosity is increased to 30%, the simulated equivalent thermal conductivity reduces by 52.50%, and the experimentally tested interfacial thermal resistance increases by 71.58%. The experimental test results of the interfacial thermal resistance are more significant than the simulated results, indicating that porosity is not the only factor influencing accelerated interfacial aging. It provides a theoretical and experimental basis for further research on porosity accelerated aging of silver adhesive interfaces.

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A New Resonant Composite Probe for Near-field Scanning

A New Resonant Composite Probe for Near-field Scanning

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Duan Nie Rui-Qi Wang Lei Wang School of Electronic Information and Artificial Intelligence Shaanxi University of Science and Technology Xi’an China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou

In this article, a new wideband resonant probe with two orthogonal magnetic-field measurement features is proposed. The resonant magnetic-field probe consists of two orthogonal shorted sensing loops, two transmission lines with two outputs, a pair of LC resonant circuits, a shorted via, a connected via, and two rows of coaxial via fences. The LC resonant circuits including a pair of shorted stubs as additional inductor and open stubs as additional capacitor are used to excite resonant mode. The connected and shorted vias are used to form the orthogonal sensing loops. In order to verify the design rationality, the proposed probe is optimized, manufactured, and measured. The simulated results reveal the proposed probe could simultaneously test two orthogonal magnetic-field components at 1.575 GHz.

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