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IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

作者： Yingyu Xu Chunhua He Qinwen Huang Guizhen Yan School of Computer Guangdong University of Technology Guangzhou China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China National Key Laboratory of Science and Technology on Micro/Nano Fabrication Institute of Microelectronics Peking University Beijing China

ISBN: (数字)9798350359831

ISBN: (纸本)9798350359848

In this study, we investigate the vibration characteristics and failure modes of gold wire leads in MEMS gyroscopes under high-temperature and thermal-shock conditions through simulation and experimental analysis. The simulation results indicate a gradual degradation in the intrinsic frequencies of the leads as the temperature rises from -40 °C to 120 °C. The simulation results are verified by testing the intrinsic frequency with a percentage error of less than 2%. The average temperature drift of the intrinsic frequency is approximately - 8.82 Hz/°C. When comparing the intrinsic frequency changes before and after burn-in and thermal-shock tests, it is evident that the mechanical degradation of the gold wire leads is limited under the severe thermo-mechanical coupling field, with frequency fluctuations ranging from 0.01% to 17%. There is no occurrence of a lead fracture or solder joint failure. The main failure modes are lead collapse and short-circuit failure due to the fatigue of long leads. Minimizing the span and height of the leads can reduce the risk of fatigue and short-circuit failures.

关键词： Micromechanical devices Couplings Gold Simulation Thermomechanical processes Fatigue Gyroscopes

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Effect mechanism analysis of low-temperature on short-circuit robustness of SiC MOSFETs

Effect mechanism analysis of low-temperature on short-circui...

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IEEE Conference on Industrial electronics and applications (ICIEA)

作者： Pengkai Wang Yuan Chen Xinyu Zhu Hu He Junhui Li State Key Laboratory of Precision Manufacturing for Extreme Service Performance School of Mechanical and Electrical Engineering Central South University Changsha China National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component The China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (数字)9798350360868

ISBN: (纸本)9798350360875

The performance of SiC MOSFETs in practical operational environments is challenged by multifaceted stress scenarios, encompassing thermal, mechanical, and electrical stress, which significantly influence their reliability and operational longevity. Consequently, a comprehensive exploration of aging precursors and failure mechanisms becomes imperative for the SiC MOSFETs under diverse stress interactions. This study focused on the impact of low- temperature storage (LTS) on short-circuit (SC) ruggedness through direct current characteristic tests (DC test), low- frequency noise tests (LFN), and failure analysis (FA) for 1.2 kV SiC MOSFETs. The outcomes revealed that LTS stress adversely affected short-circuit withstand time (SCWT). These findings provide insights into the reliability and operational lifespan of SiC MOSFETs under real-world operating conditions.

关键词： MOSFET Electron traps Temperature Silicon carbide Noise Failure analysis Logic gates

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Fault Diagnosis Algorithm for Power Module Based on A Hybrid Attention Network

Fault Diagnosis Algorithm for Power Module Based on A Hybrid...

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Prognostics and System Health Management Conference (PHM-Qingdao)

作者： Lubin Yu Zhenwei Zhou Yuhang Huang Junbin Liu Shilie He Pengfei Yu Linghui Meng Danni Hong Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China Guangzhou Institute of Technology Xidian University Guangzhou China

Fault diagnosis has a significant contribution to the reliability of the power module, the stability and accuracy of the fault diagnosis algorithm based on single-channel data have major limitations, and existing fault diagnosis algorithms based on multi-channel data have limitations such as insufficient capability of extracting features and low utilization rate of inter-channel correlation information. Therefore, in this paper, a multi-channel fault diagnosis algorithm for power modules based on a hybrid attention network is proposed, aiming at solving the problems of limited fault characterization capability of single-channel data and insufficient feature extraction of existing multi-channel input models. The hybrid attention module of this network adopts a mechanism that combines time attention and channel attention to extract the features of multi-channel data from both channel and time series dimensions of the input data in a holistic manner. The experiments have demonstrated that the hybrid attention network proposed in this paper achieves an accuracy of 99.40% in the multi-channel fault diagnosis test set, which is highly state-of-the-art and practicable, and can provide new ideas and methods for the research in fault diagnosis.

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Research on simulation of Cu/SiO2 hybrid bonding process and interface failure mechanism by Finite Element Analysis

Research on simulation of Cu/SiO2 hybrid bonding process and...

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International Conference on (ICEPT) electronic Packaging technology

作者： Haozhong Wang Hongtao Chen Junshan Xiang Xiaofeng Yang Sauvage Laboratory for Smart Materials Harbin Institute of Technology (Shenzhen) Shenzhen China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

Cu/SiO 2 hybrid bonding technology is proposed as a solution for the increasing demand of 3D packaging for higher I/O density and higher bandwidth applications. In this paper, a numerical approach to investigate the stress distribution of fine-pitch die-to-die hybrid bonding (D2D-HB) is proposed. The Finite Element Analysis (FEA) tool is used to build the model of the bonding process of D2D-HB. The influence of design parameters and conditions on the evolution of the stress on the Cu-Cu bonding interface and the dielectric layer interface during the bonding process is investigated. The results show that, the peak pressure on the Cu-Cu interface and the peak tensile force on the SiO 2 -SiO 2 interface can reach up to 85.26 MPa and 183.37 MPa during heating stage, respectively. During cooling stage, the pressure on the Cu-Cu interface changes into tensile force, and the tensile force on the SiO 2 -SiO 2 interface changes into pressure. In addition, the simulation results of the Cu-Cu bonding area are also displayed and discussed. For all the D2D-HB design studied in this research, up to 97.5% of Cu bonding area could be obtained. The simulation results will provide not only theoretical support for hybrid bonding technology.

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Empirical Modeling of NPN Bipolar Transistors Under Reverse Emitter-Base Junction Current Hot Carrier Stress

Empirical Modeling of NPN Bipolar Transistors Under Reverse ...

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International Conference on (ICEPT) electronic Packaging technology

作者： Xianyu Zhang Hao Niu Ziyang Wang Rui Gao Yingchao Xu School of Optoelectronics and Communication Engineering Xiamen University of Technology Xiamen China National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

Hot carrier stress (HCS) under reverse Emitter-Base junction current (Ireb) is a major degradation mechanism in NPN bipolar transistors. With the continuous miniaturization of devices, the internal electric fields of these devices increase, leading to a heightened possibility of HCS. This makes understanding and mitigating the HCS effect crucial for the development of reliable, high-performance electronic devices. We employed the constant current stress (CCS) method on NPN bipolar transistors subjected to Ireb stress to study HCS. Ireb and temperature dependence are investigated using an empirical HCS model. The results are beneficial in industries where long device lifespan and reliability are critical, such as in space applications, medical devices, or critical infrastructure systems.

关键词： Degradation Industries Bipolar transistors Temperature dependence Temperature Medical devices Hot carriers

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Degradation Behavior and Mechanisms of E-mode GaN HEMTs with p-GaN Gate under High Temperature Gate Bias Stress 12

Degradation Behavior and Mechanisms of E-mode GaN HEMTs with...

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12th IEEE Global reliability and Prognostics and Health Management, PHM-Nanjing 2021

作者： Chen, WenYang Chen, Y.Q. Geng, KuiWei School Of Electronic And Information Engineering South China University Of Technology Guangzhou China Science And Technology On Reliability Physics And Application Of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9781665401302

In this work, the degradation behavior and the physical mechanism of the AlGaN/GaN HEMTs with p-GaN gate after HTGB stress were investigated. The experiment results show that the threshold voltage ($V{th})$ and gate leakage currents (Igss) increase obviously. At the same time, the drain-source current (Ids) decreases significantly after HTGB stress. However, the on-state resistance (Ron) and the blocking characteristics have no change. Furthermore, obvious decrease was observed in the $C{g}-V{g}$ curve, and it shows that the interface state increases significantly after HTGB stress. The physical mechanism of the degradation behavior could be attributed to electromigration and the formation of new traps at p-GaN layer, AlGaN barrier, p-GaN/AlGaN interface, and AlGaN/GaN interface. This work could be a useful reference for the study of AlGaN/GaN HEMTs. © 2021 IEEE.

关键词： Gallium nitride

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4.9 GHz A1-mode Lamb Wave Resonator based on Partially Released LN Film

4.9 GHz A1-mode Lamb Wave Resonator based on Partially Relea...

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International Conference on electronics technology (ICET)

作者： Zhuo Zhang Ting-Yang Zhang Qin-Wen Huang Shao-Hua Yang Xiao-Sheng Zhang Cheng Tu School of Electronic Science and Engineering University of Electronic Science and Technology of China Chengdu China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

This work presents a 4.9 GHz ${A}_{1}$ -mode Lamb wave resonator (LWR) based on partially released Z-cut lithium niobate (LN) thin film, which is aimed at application of 5G communication in N79 band. The designed LWR utilizes the horizontal electric field for efficient excitation of first-order antisymmetric (A 1 ) mode in the acoustic cavity made of LN film. The fabrication process for the designed LWR is described and validated. The measured results show that the partially released devices achieve large electromechanical coupling coefficient (k$_{t}^{2}$=27%), which is comparable to that of reported fully released devices. The measured results are in good agreement with the finite element (FE) simulations. The presented partially released LWRs show prospect to improve the mechanical robustness of such devices without much sacrifice to performance.

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reliability study of Through Glass Vias under high current density

Reliability study of Through Glass Vias under high current d...

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International Conference on (ICEPT) electronic Packaging technology

作者： Junshan Xiang Hongtao Chen Haozhong Wang Xiaofeng Yang Sauvage Laboratory for Smart Materials Harbin Institute of Technology (Shenzhen) Shenzhen China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

Through glass vias (TGVs) interconnection technology based on glass interposer shows a great application prospect in RF devices, MEMS packaging and other fields due to its excellent high-frequency electrical characteristics, outstanding mechanical stability, and lower cost. Electromigration is one of the common failure modes in electronic components, so it is important to study the reliability of TGV interconnection structures under high current density. In this paper, the electromigration of an RDL-TGV has been investigated by finite element simulation and experiment. Simulation results show that RDL-TGV junction is the most vulnerable area for failure. The experimental results show that the electromigration voids are concentrated on the RDL side near the TGV-RDL junction. The growth mechanism of the electromigration voids in the RDL-TGV structure is summarized. The results of simulation and experiment can provide guidance for the study of electromigration reliability of TGV interconnection.

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Analysis of Internal Atmosphere of InGaAs Detectors with Different Degassing Conditions 3

Analysis of Internal Atmosphere of InGaAs Detectors with Dif...

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3rd International Conference on System reliability and Safety Engineering, SRSE 2021

作者： Lai, Canxiong Sun, Wen Yang, Shaohua Zhou, Bin Sci. and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou China Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics Shanghai China

ISBN: (纸本)9781665401609

the internal atmosphere composition of the cavity package of InGaAs detector has an important impact on its reliability. In this paper, the internal atmosphere contents of the detectors prepared at different degassing conditions are analyzed. The results show that vacuum baking at a relatively low temperature such as 45°C can reach an acceptable internal atmosphere level. Higher baking temperature °fif ((db further reduce the moisture content to about 1000ppmv, which would make the detector more reliable for long-term operation and thus be an ideal choice for degassing. Besides vacuum baking, the degassing effectiveness of nitrogen gas washing is also confirmed to be acceptable, although the moisture and oxygen contents are higher than those of vacuum baking. © 2021 IEEE.

关键词： Semiconducting indium gallium arsenide

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Proper Orthogonal Decomposition and Long Short-Term Memory Neural Network-Based Multiphysics Digital Twin Model for electronic Device Online Condition Monitoring

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IEEE Transactions on Instrumentation and Measurement 2025年 74卷

作者： Wang, Le-Tian Wang, Da-Wei Zhang, Bo-Wen Yang, Xiao-Feng Zhao, Wen-Sheng Hangzhou Dianzi University Innovation Center for Electronic Design Automation Technology School of Electronics and Information Hangzhou310018 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The 5th Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou511370 China

Digital twin (DT), a virtual representation of a real-world object, has great potential in online condition monitoring and operation management of electronic devices. Although numerical simulation methods, such as the finite element method and method of moment, can accurately evaluate the performance of electronic devices, they are usually time-consuming and computationally intensive, making real-time monitoring challenging. In this work, a multiphysics DT modeling approach for electronic devices is proposed, where the proper orthogonal decomposition (POD) method is first employed to reduce the problem order, and then, the long short-term memory (LSTM) neural network is trained based on the reduced-order model to obtain the DT model. Furthermore, to deal with the difficulty of obtaining the initial physical states for DT model, an adaptive compensation method is developed, enabling the online monitoring to start from unknown initial states. Through building the thermal and mechanical DT models of an integrated microsystem and comparing modeling efficiency and model accuracy with traditional approaches, the performance of the proposed modeling method is verified. Finally, a prototype online thermal monitoring system for a multichip module is developed by combining its DT model with a measurement platform. Results indicate that the model performs well in online condition monitoring of multichip module even starting from a random unknown initial state. © 1963-2012 IEEE.

关键词： Multichip modules

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