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Energy, Electrical and Power Engineering (CEEPE), International Conference on

作者： Yongle Zhong Xinhua He Zhizhe Wang Jun Luo Bin Wang Qiushuang Li School of Materials Science and Engineering South China University of Technology Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China Electronic Component Inspection and Testing Center China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou Institute of Technology Xidian University Guangzhou China

ISBN: (数字)9798350375794

ISBN: (纸本)9798350375800

A comprehensive review of High-Temperature Gate Bias (HTGB) and High-Temperature Reverse Bias (HTRB) reliability in Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (SiC MOSFETs) was made in this paper. Despite the considerable potential of high power, high voltage, high frequency, and radiation resistance for SiC MOSFETs, the challenge in long-term reliability has limited the application in high-frequency and high-temperature fields. As an effective method to assess long-term reliability of SiC MOSFETs, HTGB and HTRB testing have been widely applied for commercial SiC MOSFETs. The research on the reliability of SiC MOSFETs under HTGB and HTRB has been comprehensively reviewed in this paper, with a focus on the test conditions, deterioration laws of key parameters, and failure mechanisms. This review may serve as a valuable reference for subsequent research on SiC MOSFETs.

关键词： Resistance MOSFET Silicon carbide Reviews Failure analysis High-voltage techniques Logic gates

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A Single-Loop Narrow-Band Force Rebalance Control Method with Temperature Self-Compensation for a MEMS Gyroscope

A Single-Loop Narrow-Band Force Rebalance Control Method wit...

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IEEE International Conference on Micro Electro Mechanical Systems

作者： Chunhua He Yingyu Xu Heng Wu Qinwen Huang Qiancheng Zhao Guizhen Yan School of Computer Guangdong University of Technology China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory CEPREI China School of Automation Guangdong University of Technology China School of Integrated Circuits Peking University Beijing China National Key Lab of Micro/Nano Fabrication Technology Beijing China

ISBN: (数字)9798331508890

ISBN: (纸本)9798331508906

This paper presents a novel single-loop narrow-band force rebalance control method with temperature self-compensation for a MEMS gyroscope. The narrow-bandwidth force rebalance control for the sense mode is achieved using a simple bandpass filter (BPF) and without modulation or demodulation. The center frequency of the BPF is adjusted automatically to match the resonant frequency of the sense mode. Meanwhile, its gain is tuned based on the real-time quality factor of the sense mode. Experimental results demonstrate that the bias drift of the gyroscope with self-compensation is reduced from 1320 deg/h to 16 deg/h, while the scale factor drift is reduced from 0.616 mV/deg/s to 0.075 mV/deg/s.

关键词： Micromechanical devices Band-pass filters Temperature sensors Q-factor Force Resonant frequency Real-time systems Gyroscopes Temperature control Phase locked loops

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Characteristics and Mechanisms of Single Event Effects Caused by Atmospheric Neutrons in System in Package Device

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Yuanzineng Kexue Jishu/Atomic Energy Science and technology 2025年第5期59卷 1154-1164页

作者： Ye, Jiefeng Liang, Chaohui Zhang, Zhangang Zheng, Shunshun Lei, Zhifeng Liu, Zhili Geng, Gaoying Han, Hui Institute of Physical Science and Information Technology Anhui University Hefei230039 China Key Laboratory of Reliability Physics and Application Technology for Electronic Components Fifth Institute of Electronics Ministry of Industry and Information Technology Guangzhou511370 China The 58th Research Institute of China Electronics Technology Group Wuxi214035 China

To investigate the effects of atmospheric neutron radiation effects on a system-in-package (SiP) device, single event upset (SEU) and single event functional interruption (SEFI) were focused on in the experiment. Correlations between these effects and experimental parameters were found and the reasons for these correlations were analyzed. The accelerated irradiation experiment of a SiP device was conducted based on the atmospheric neutron irradiation spectrometer. The experiment observed the effects of SEU and SEFI caused by neutrons. SEUs are found in the static random access memory (SRAM) module of the digital signal processor (DSP) and the block random access memory (BRAM) module inside the field programmable gate array (FPGA). SEFI errors are primarily program crashes and DSP state machine freezes. The SEU cross section caused by neutrons was calculated, and the effects of process nodes and neutron beam energy spectrum on the SEU cross section were analyzed. As the process node decreases from 40 nm to 28 nm, the U-SEU cross section reduces by 73%. Thermal neutrons significantly impacts the SEU cross section of SRAM. After filtering thermal neutron components from the neutron beam, the SRAM SEU cross section decreases by 28.8%. The experimental results were analyzed through simulations performed using GEANT4, a particle transport and interaction modeling software. The simulated results provide essential insights into the underlying mechanisms contributing to the lower SEU cross section observed in the experimental. The soft error rate at New York sea level was calculated, revealing that the BRAM inside the FPGA was the most SEU-sensitive module, with a soft error rate of 766.8 FIT/Mb due to high-energy neutrons (E＞1 MeV). This finding emphasizes the necessity for error correction codes (ECC) or redundancy techniques to mitigate potential SEUs in critical memory devices. No SEUs are found in DDR2 SDRAM, CLB, or ROM inside the FPGA. This resilience may stem from ar

关键词： Radiation damage

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Fault Injection of Strong Magnetic Pulse in Digital Integrated Circuit 3

Fault Injection of Strong Magnetic Pulse in Digital Integrat...

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3rd IEEE International Conference on Communications, Information System and Computer Engineering, CISCE 2021

作者： Liu, Xiaodong Liu, Yi Weng, Xiaodong Lin, Xiaoling Yang, Yintang School of Microelectronics Xidian University Xi'an China Key Laboratory of Reliability Physics and Application Technology for Electronic Components Guangzhou China

ISBN: (纸本)9780738112152

As the electromagnetic environment of electronic equipment becomes more complex and the chip area increases, the research of integrated circuit electromagnetic compatibility (EMC) technology is taken seriously. The development of new technologies represented by electromagnetic pulse weapons, electromagnetic artillery, and high-power wireless charging technologies for mobile phones has made the integrated circuit as the control core face the challenge of complex and harsh electromagnetic interference (EMI). Based on the strong magnetic pulse (SMP) environment generated by the electromagnetic artillery, this paper analyzes the interference mechanism of the SMP to the digital integrated circuit, and conducts the simulation experiment of the SMP fault injection in the SPICE simulation software. © 2021 IEEE.

关键词： Timing circuits

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The Effects of RF Power and Cavity Structure on the Plasma Discharge Characteristics of RPS

The Effects of RF Power and Cavity Structure on the Plasma D...

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electronics and Devices, Computational Science (ICEDCS), International Conference on

作者： Hai Lin Wei Su Ming Chen Renhuai Liu School of Mechanics and Construction Engineering Jinan University Guangzhou China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China MOE Key Lab of Disaster Forecast and Control in Engineering Guangzhou China

In this paper, a two-dimensional model of plasma diffusion in remote plasma source discharge chamber is established by COMSOL plasma module. The electron density and electron temperature distributions inside the discharge cavity were obtained by adjusting the thickness of alumina coating and the magnitude of RF power parameters. Based on the results, the authors discuss the effects of different alumina coating thickness and RF power on the electron density and electron temperature inside the discharge cavity, which provide theoretical guidance for the subsequent optimization of the internal structure of the discharge cavity and the discharge parameters.

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Review of reliability of Silicon Carbide Power Diodes

Review of Reliability of Silicon Carbide Power Diodes

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Energy, Electrical and Power Engineering (CEEPE), International Conference on

作者： Qiushuang Li Xiangdong Li Zhizhe Wang Jun Luo Rui Deng Kaibin Chen Yongle Zhong Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou Institute of Technology Xidian University Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China School of Materials Science and Engineering South China University of Technology

ISBN: (数字)9798350375794

ISBN: (纸本)9798350375800

Despite the extensive literatures on Silicon carbide (SiC) diodes, there was relatively little research dedicated to reliability. Therefore, the latest studies, focusing on the reliability test results and their failure mechanisms of SiC diode devices have been reviewed in this paper, including major tests closely related to practical operational conditions, such as the HTRB(High Temperature Reverse Bias), the PC(Power Cycling), the H 3 TRB(High Temperature and High Humidity Reverse Bias), the HV-H 3 TRB(High Voltage - High Temperature and High Humidity Reverse Bias) and so on. This paper provides a comprehensive summary, offering the guidance for future research and development for the continued improvement of diode performance.

关键词： Silicon carbide Thermal resistance Wires Failure analysis Humidity Voltage reliability engineering

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Numerical Simulation of Harmonic Response Analysis for Small Out-Line Package

Numerical Simulation of Harmonic Response Analysis for Small...

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Software Engineering, Social Network Analysis and Intelligent Computing (SSAIC), Asia-Pacific Conference on

作者： Hai Lin Xianshan Dong Wei Su Qinwen Huang Agam Tomar School of Mechanics and Construction Engineering Jinan University Guangzhou China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China MOE Key lab of Disaster Forecast and Control in Engineering Guangzhou China Faculty of Engineering and Mathematical Sciences University of Western Australia Australia

ISBN: (数字)9798350393682

ISBN: (纸本)9798350393699

In order to discuss the influence of the number of sheets on acceleration and frequency curve of sample surface, the finite element model of clamp, SOP sample and metal sheet is firstly established with Solidworks. Different number of sheets are laid on the surface of SOP sample. Then changing the number of the paper sheets, harmonic response analysis is converted based on modal analysis. The influence of different number of sheet on acceleration and frequency curve is discussed. The results show the relation between acceleration-frequency curve of different thickness of paper, which provides reference for packaging design.

关键词： Solid modeling Social networking (online) Modal analysis Metals Packaging Harmonic analysis Numerical simulation

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The Study of Activation Energy of Electromigration at Different Temperature

The Study of Activation Energy of Electromigration at Differ...

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System reliability and Safety Engineering (SRSE), International Conference on

作者： Ning Li Zhijian Chen Xiaowen Zhang South China University of Technology Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou Guangzhou China

In this paper, electromigration (EM) activation energy versus temperature in advanced damascene copper lines has been studied. EM experiments have been carried out on fully back-end processed samples under the condition of different temperatures and current densities. The metal line test structures used have the four-terminal Kelvin configuration and the lines length is 800µm with the minimum design rule width. The specific location of failure was observed by scanning electron microscope (SEM) and the failure mechanism was analyzed. The mechanical stress of the test structure was measured by Raman spectroscopy and the effect of mechanical stress on the reliability of metal electromigration was studied. It is found that the activation energy decreases slowly with the decrease of the test temperature. When the activation energy acquired under high temperature environment was extrapolated to operation condition by quadratic polynomial fitting, the activation energy under the environment temperature of 300°C is different from the value under the operation condition. Meanwhile, when predicting the EM lifetime, the results is that the EM lifetime under the operation condition decreased to 18% compared to that under the environment temperature of 300°C.

关键词： Electromigration Scanning electron microscopy Raman scattering Life estimation Safety Copper reliability

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Using Load Transient Waveform to Analyze Fault Propagation Mechanism in DC-DC Switching Power Supply

Using Load Transient Waveform to Analyze Fault Propagation M...

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Progress in Electromagnetic Research Symposium (PIERS)

作者： Junliang Wan Pengfei Yu Qiang-Ming Cai Xin Cao Longjian Zhou Haoran Li Yuyu Zhu Jun Fan School of Information Engineering Southwest University of Science and Technology Mianyang China Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component Guangzhou China Robot Technology Used for Special Environment Key Laboratory of Sichuan Province Mianyang China Tianfu Institute of Research and Innovation Southwest University of Science and Technology (SWUST-TIRI) China

ISBN: (数字)9798350375909

ISBN: (纸本)9798350375916

The degradation of certain components within DC-DC power supplies can lead to abnormal performance, resulting in the occurrence of faults. The degradation of components can cause changes in output voltage and current, and the different degradation characteristics of components have different impacts on the characteristics of output parameters. Therefore, it is necessary to master this impact relationship, that is, the fault propagation mechanism can be used to effectively diagnose faults and manage health. Studying the fault propagated mechanism is an important prerequisite for fault diagnosis. Output terminals of DC-DC power supply are usually connected in parallel with electrolytic capacitors. The function of electrolytic capacitors is to filter, filtering out most of the AC part of the output voltage, and reducing the ripple of the output voltage. Electrolytic capacitors are the most vulnerable components to failure in switching power supplies, with approximate 60% of failed components being electrolytic capacitors. Therefore, the fault propagation mechanism of electrolytic capacitors is a key research topic. Most research focuses on the fault propagation mechanism based on steady-state output signals. This article studies the fault propagation mechanism based on transient output signals. Through experimental testing, the impact of parameter degradation of electrolytic capacitors on the transient waveform of output voltage and the mapping relationship between capacitor degraded parameters and transient waveform are studied. The method is to analyze the voltage waveform when the current step changes using equivalent degradated experiments of capacitors. Its advantage lies in the fact that transient waveforms are more sensitive than steady-state waveforms and require lower sampling rates, making it easier to analyze the degradated characteristics of electrolytic capacitors. For power supplies with simple structures, data is collected through simulation. For commerc

关键词： Degradation Resistance Power supplies Capacitors Voltage Switches Capacitance

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Proton Irradiation Induced Single-Event Burnout Effect in P-Gan Power Devices

SSRN

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SSRN 2024年

作者： Bai, Ru Xue Guo, Hong Xia Zhang, Hong Zhang, Feng Qi Ma, Wu Ying Ouyang, Xiao Ping Zhong, Xiang Li The School of Materials Science and Engineering Xiangtan University Xiangtan411105 China Northwest Institute of Nuclear Technology Xi’an710024 China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou510610 China Zhejiang University China

The microphysical mechanism of proton-induced single-event burnout (SEB) effect in P-GaN power devices was investigated by experiments and simulations. The experiment results show that when the proton energy is 100 MeV, the proton flence reaches 1.38×1011 p·cm-2, and the bias voltage is 600 V, the device will burnout. The transport and deposition processes of particles in the failure event were simulated by Monte Carlo and TACD methods. The simulation results show that the nuclear reaction of protons with the material of the device leads to the generation of many electron-hole pairs. Under the action of the electric field, electrons are rapidly collected at the drain electrode, and holes accumulate under the gate. The accumulation of charge under the gate lowers the potential barrier, producing the bipolar effect and the back-channel effect. These two effects drive more electrons toward the drain, which leads to a large current breakdown in the drain. Notably, the additional electric field significantly impacts the SEB generation. © 2024, The Authors. All rights reserved.

关键词： Monte Carlo methods

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