检索结果-内蒙古大学图书馆

作者： Lu, Guiping Liang, Jiaran Shentu, Zeyu Wu, Wenxiong He, Minghao Xiao, Zhiyong Li, Jianke Beijing Institute of Technology Zhuhai Zhuhai Guangdong519088 China The Fifth Electronics Research Institute of Ministry of Industry and Information Technology Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou Guangdong510610 China

In order to quickly and accurately identify one of the many equipment that has stopped working or a working environment has changed due to errors. A method based on the Internet of things online monitoring equipment is designed to observe whether equipment is working normally. Through the design of an intelligent collection card with a variety of sensors, information will be collected and transmitted to a collection server, and finally uploaded to a cloud, so that experimental conditions can be traced back to whether experimental conditions have been artificially changed or whether equipment has been not operated properly. Through the data analysis of a software operation platform, the current status of electrical safety testing equipment and the results of testing data can be monitored online, and then the fault of electrical safety equipment can be diagnosed. That is, the real-time monitoring and fault diagnosis of electrical safety equipment and the unified management of on-line equipment. © 2021, The Author(s), under exclusive license to Springer Nature Switzerland AG.

关键词： Failure analysis

来源：评论

学校读者我要写书评

暂无评论

Analysis of Power Cycle Aging Test for SiC MOSFET

Analysis of Power Cycle Aging Test for SiC MOSFET

引用

Prognostics and System Health Management Conference (PHM-Qingdao)

作者： Zhouyou Zheng Linghui Meng Xin Li Bin Ruan Haotian Cui School of Electrical and Information Engineering Anhui University of Science and Technology Huainan Anhui China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guang zhou Guang dong China School of Information Engineering Southwest University of Science and Technology Mianyang China

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are gradually replacing silicon (Si)-based devices as the core devices for power conversion in high-temperature, high-pressure, and high-frequency applications due to their superior material properties. The long-term reliability of SiC MOSFETs has become a research focus. Power cycling tests, an important aging test for evaluating device reliability, can reflect the reliability under real working conditions to some extent. The test is conducted using a constant on/off time mode, and the on-state resistance and body diode voltage drop of the devices are measured online during the aging test. The experimental results show that an increase in on-state resistance during power cycling tests causes an increase in junction temperature, which leads to wire bond aging and eventually results in SiC MOSFET failure.

关键词：

来源：评论

学校读者我要写书评

暂无评论

A Novel Capacitive Sensor Featuring Surface Microstructure and Ion Gels for Measuring Full Pressure with High-Sensitivity

SSRN

引用

SSRN 2023年

作者： Fan, Leijin Liu, Yuantao Yang, Xiaofeng Sun, Hu Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The 5th Electronics Research Institute Ministry of Industry and Information Technology Guangzhou511370 China School of Aerospace Engineering Xiamen University Xiamen361005 China

Compared with positive pressure measurement, which is widely used in many fields, negative pressure measurement is often ignored. However, realizing full pressure measurement, that is, positive and negative pressure measurement, with high sensitivity and wide measurement range, is one of the most urgent development directions and key challenges faced by flexible pressure sensors. To overcome this challenging problem, a highly sensitive full-pressure capacitive sensor with surface microstructure and ion gels is introduced in this paper. The sensing mechanism of the sensor is implemented by detecting the capacitance change caused by the change in the contact area between the ion gel and the electrode due to the internal and external pressure difference. The PVA/KOH basic gel material is used to resist shear deformation, and the uniform microstructure on the gel surface is achieved by the template method. How to maximize the sensitivity of positive and negative pressure measurements is discussed by carefully evaluating the design parameters of the sensor. The fabricated sensor has a wide measurement range (-100 to 250 kPa) with high sensitivity (S = 15.6 nF/kPa) in the negative pressure region and (S = 5.2 nF/kPa) in the positive pressure region. In addition, the sensor exhibits fast response, cycle stability, and low measurement limit, which further enhances its performance advantages. In order to validate the application potential of the sensor, the paper conducts experimental verification using the relationship between wind pressure measurement results and the angle of contact with the sensor, as well as the relationship between vehicle speed and wind pressure magnitude. The results show that the designed sensor has potential application prospects in full pressure measurement. © 2023, The Authors. All rights reserved.

关键词： Capacitive sensors

来源：评论

学校读者我要写书评

暂无评论

Enhanced Inverter Hybrid Fault Diagnosis Through RAM and CNN Integration

Enhanced Inverter Hybrid Fault Diagnosis Through RAM and CNN...

引用

International Conference on reliability, Maintainability and Safety,ICRMS

作者： Linghui Meng Lin Li Yuanyuan Jiang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou Guangdong China Anhui University of Science and Technology School of Institute of Artificial Intelligence Huainan Anhui China Anhui University of Science and Technology School of electrical and Information Engineering Huainan Anhui China

ISBN: (数字)9798350329988

ISBN: (纸本)9798350329995

Deep learning has been widely used in inverter open-circuit fault diagnosis; however, traditional neural networks only extract signal features of inverter faults without distinguishing between significant and minor features. To address this limitation, this paper proposes a diagnostic method for inverter hybrid faults that combine reverse attention mechanism (RAM) and convolutional neural networks. The proposed method highlights important features by utilizing RAM to reverse the attention and prune the minor features. In addition, long short-term memory is used to learn temporal information between the features. Finally, fault classification is performed using fully connected layers. Simulation experiments indicate that the proposed diagnostic method significantly improves fault diagnosis accuracy. Compared to traditional neural network fault diagnosis methods, our proposed method achieves up to 8.07% higher diagnosis accuracy, thereby validating its effectiveness.

关键词： Fault diagnosis Deep learning Accuracy Neural networks Random access memory Feature extraction Inverters Safety Convolutional neural networks Long short term memory

来源：评论

学校读者我要写书评

暂无评论

MEMS Sensitive Structure Sand and Dust Pollution Test and Its Degradation Characteristics

MEMS Sensitive Structure Sand and Dust Pollution Test and It...

引用

International Conference on reliability, Maintainability and Safety,ICRMS

作者： Bin Ruan Chunlong Zhu Tingting Liu Chunhua He Ruiwen Liu Qinwen Huang School of Information Engineering Southwest University of Science and Technology Mianyang China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China School of Computer Guangdong University of Technology Guangzhou China Institute of Microelectronics Chinese Academy of Science Beijing China

ISBN: (数字)9798350329988

ISBN: (纸本)9798350329995

The sensitive structures of certain devices containing micro-electromechanical system (MEMS) must be directly exposed to the working environment, making them vulnerable to contamination by dust and other pollutants in that environment. Consequently, this contamination degrades the performance of the device, impacting both its working life and stability. Existing test methods, such as GB/T 4208–2017 and GB/T 2423.37-2006, are not entirely suitable for evaluating the sand and dust contamination test of these MEMS devices. To address these issues, a thermistor-based test structure was designed and processed to develop an evaluation method suitable for testing the sand and dust contamination sensitive MEMS structures. The test results indicate that, unlike other hermetically sealed electronic devices, the imposition of electrical stress and cycling of the operating voltage “on-off” during the test does not increase dust accumulation. Furthermore, due to sand and dust contamination, the thermistor value of the device drifts during operation. This drift primarily arises from increased thermal resistance between the heating element of the device and the surrounding environment, resulting from the accumulation of sand and dust, which results in the increase of temperature of the heating element and ultimately results in an elevated thermistor value. This study can provide support for the structural design and package design of MEMS sensitive structures, and provide a basis for the identification and inspection of related products and the development of detailed specifications.

关键词： Micromechanical devices Temperature sensors Thermal resistance Thermistors Voltage Contamination Thermal stability Stress Resistance heating Testing

来源：评论

学校读者我要写书评

暂无评论

Stirred-Electrodeposition Construction of Porous Fe-Doped Nise Nanoclusters as a Bifunctional Catalyst for Water Splitting

SSRN

引用

SSRN 2023年

作者： Mo, Dingdiao Zhang, Jiaxing Chen, Guoxiang Huang, Zihao Liu, Xiangao Cai, Weitong Cui, Jie Su, Wei School of Materials and Energy Guangdong University of Technology Guangdong Guangzhou510006 China Analytical and Testing Center South China University of Technology Guangzhou510640 China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Guangdong University of Technology China

Transition metal selenisation is a promising approach for improving the catalytic activity for overall water splitting. However, electrodeposited NiSe electrocatalysts have not exhibited excellent overall water-splitting performance. Herein, a simple stirring-electrodeposition strategy was developed to reconfigure the catalyst morphology, and the proportion of the Fe dopant (Ni/Fe) was adjusted to synthesize a Fe-doped NiSe electrocatalyst with a 3D nanocluster morphology (named Ni0.5Fe0.5Ses/NF). This morphology combined the advantages of porous 3D nanoclusters, which have large specific surface areas, more exposed active sites and accelerated electron transfer rates compared to the 2D NiSe catalysts synthesized by electrodeposition. In addition, XPS characterization confirmed that Fe doping optimized the electronic structure of NiSe. The changes occurring in the surface compositions of NiSe/NF and Ni0.5Fe0.5Se-s/NF during the oxygen evolution reaction (OER) were also characterized by in situ Raman spectroscopy, which revealed that Fe doping enabled faster surface reconstruction of the electrocatalyst and confirmed that the active sites were NiOOH species. DTF calculations showed that Fe doping raised the d-states of the Ni atoms in Ni0.5Fe0.5Se-s/NF closer to the Fermi level than those of the Ni atoms in NiSe/NF, which led to significant improvement in the electrical conductivity. Benefiting from these properties, Ni0.5Fe0.5Se-s/NF required low overpotentials of only 185/266 mV and 101/271 mV at 10 and 300 mA cm-2 to drive the OER and HER in 1 M KOH solutions, respectively, and the assembled Ni0.5Fe0.5Se-s/NF||Ni0.5Fe0.5Se-s/NF system only required an ultralow potential of 1.48 V at 10 mA cm-2 to catalyze stable water splitting for more than 60 h. This work provides a new strategy for designing advanced bifunctional electrocatalysts to achieve overall water splitting. © 2023, The Authors. All rights reserved.

关键词： Selenium compounds

来源：评论

学校读者我要写书评

暂无评论

Simulation Analysis of Mechanical Response of Wire Bonding in SiP under Thermal-mechanical-electrical Coupling Load 3

Simulation Analysis of Mechanical Response of Wire Bonding i...

引用

3rd IEEE International Conference on Integrated Circuits, Technologies and applications, ICTA 2020

作者： Chen, Fangzhou Chen, Si Zhou, Bin Huang, Yun Qin, Fei Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China Beijing University of Technology Beijing China

ISBN: (纸本)9781728180328

The heat dissipation of chips rise the risk for reliability of the system in package (SiP). Sequential coupling FEM simulation method was adopted to evaluate the reliability of SiP. The sub-model technology was used to analyze the thermo-mechanical response of gold wire leads in the whole SiP device. Based on the simulation, the stress and temperature distribution of the lead wires are obtained. The maximum value is compared with the ultimate strength to evaluate the reliability of the product under working conditions. © 2020 IEEE.

关键词： System-in-package

来源：评论

学校读者我要写书评

暂无评论

Influence of the acceptor-Type trap on the characteristic of the short-channel GaN MOS-HEMT 15

Influence of the acceptor-Type trap on the characteristic of...

引用

15th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2020

作者： Shi, Yijun Fu, Zhiwei Yao, Bin Chen, Si Chen, Yiqiang Zhou, Bin Huang, Yun Wang, Zhizhe Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510610 China

ISBN: (纸本)9781728162355

In this work, the influences of the acceptor-Type trap (located at GaN/insulator interface and GaN buffer layer) on the threshold voltage and 2-dimension electron gas (2DEG) density are analyzed for short-channel GaN MOS-HEMT. Particularly, the influence of the acceptor-Type trap on short-channel effect in short-channel GaN MOS-HEMT is analyzed and modeled for the first time. The analyzed results have shown that the acceptor-Type trap plays an important role on the threshold voltage, 2DEG density, and short-channel effect. The calculated results are well supported by the numerical simulation and experimental measurement, which verified the correctness and accuracy of the presented model to predict the dependence of threshold voltage, 2DEG density, and short-channel effect on acceptor-Type trap. © 2020 IEEE.

关键词： Gallium nitride

来源：评论

学校读者我要写书评

暂无评论

Computer transient simulation for dual in-line package through finite element analysis and ANASYS software 3

Computer transient simulation for dual in-line package throu...

引用

3rd International Conference on Electrical, Communication and Computer Engineering, ICECCE 2021

作者： Su, Wei Luo, Wenhao Dong, Xianshan Chen, Si Tomar, Agam Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China MOE Key Lab of Disaster Forecast and Control in Engineering Guangzhou China School of Mechanics and Construction Engineering Jinan University Guangzhou China Faculty of Engineering and Mathematical Sciences University of Western Australia Australia

The reliability of the DIP package is studied by numerical simulation. Firstly, the DIP package, fixture and metal steel are modeled. Based on this, variable thickness papers are laid on the sample. According to the experiment, corresponding excitation and boundary condition are set. Then, the transient analysis result of DIP package is obtained through numerical simulation. The results show the relation of different thickness papers and acceleration-time curve, which provides a beneficial reference for the optimization of DIP packing. © 2021 Institute of physics Publishing. All rights reserved.

关键词： Transient analysis

来源：评论

学校读者我要写书评

暂无评论

A Low Frequency Fiber Vibration Acceleration Sensor Based on Long Period Fiber Grating and Double-Clamped Beam

SSRN

引用

SSRN 2022年

作者： Zhang, Limu Zhang, Wei Liu, Qishi Sun, Xiaoyan Hu, Youwang Duan, Jian State Key Laboratory of High Performance Complex Manufacturing College of Mechanical and Electrical Engineering Central South University Changsha410083 China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory Guangzhou510610 China

In this paper, we have designed, fabricated and characterized a fiber sensor for the measurement of low frequency vibration acceleration. The sensor structure based on a double-clamped beam and a long period fiber grating (LPFG) that inscribed in single mode fiber (SMF) by femtosecond laser. The LPFG stick tightly on top surface of the beam and its transmission spectrum changes with beam bending enabling vibration acceleration *** experimental results suggest that the sensor has an accurate and flat frequency response over a certain range of 1.5~10Hz, and the maximum frequency response error measured experimentally is 4.4%. The maximum measurable acceleration is 0.3g and the maximum acceleration sensitivity measured experimentally is 2.8mW/g with a linearity greater than 99.6%. The temperature drift of the sensor is 0.001g/°C and it also has good anti-interference ability and reliability at the same time. © 2022, The Authors. All rights reserved.

关键词： Single mode fibers

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：