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Giant negative electrocaloric effect measured by indirect method in X-ray irradiated P(VDF-TrFE)films

Journal of Materiomics 2024年第3期10卷 624-631页

作者： Bo Li Bin Yang Hong Zhang Jiajia Zhang Qianjin Wang Weishu Liu Department of Materials Science and Engineering Southern University of Science and TechnologyShenzhenGuangdong 518055China Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices Southern University of Science and TechnologyShenzhenChina College of Physics and Electronic Information Yunnan Normal UniversityYunnan Kunming 650500China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research InstituteGuangzhou 510610China

Flexible solid-state cooling devices with high efficiency are attracted to ferroelectric polymers with excellent negative electrocaloric(EC)*** is challenging to obtain a large negative EC effect in ferroelectric polymers due to the lack of tunable techniques.A giant negative EC response was obtained in the poly(vinylidene fluoride-trifluoroethylene)copolymers(P(VDF-TrFE),70/30,in mole ratio)irra-diated with high-energy *** irradiated P(VDF-TrFE)films showed an adiabatic temperature change of-13.5 K at 40 MV/m under a dose of 5 Mrad(1 Mrad=10^(4) J/kg)obtained by the indirect *** significant negative EC effect is attributed to the enhancement of crystalline due to the entry of polymer molecules into the amorphous to crystalline structure and the reduction of heat ca-pacity due to the increase of *** addition,X-ray irradiation improves the dielectric coefficient from 15 to *** research indicates that irradiation can modify the negative EC properties of ferro-electric polymers for solid-state cooling.

关键词： Negative electrocaloric effects X-rays radiation P(VDF-TrFE)films

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RESEARCH ON THE reliability OF WIRE BONDING IN HUMID ENVIRONMENTS 13

RESEARCH ON THE RELIABILITY OF WIRE BONDING IN HUMID ENVIRON...

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13th International Conference on Quality, reliability, Risk, Maintenance, and Safety Engineering, QR2MSE 2023

作者： Zhang, Xiaowen Ling, Xiaolin Gao, Ru Science and Technology on Reliability Physics and Application of Electronic Component Laboratory 110 DongGuangZhuang Road Guangzhou China

ISBN: (纸本)9781839539848

In order to study the reliability of bonding wire under the condition of humidity environment, a testing structure chip was designed and three samples were subjected to humid test at 85℃/85% RH. During the experiment, all three samples showed an increase in leakage current. Through on-site observations, it was found that the leakage current occurred initially, when the experiment continued, the test structure failed due to the detachment of bonding wires from the bonding pad. The failure analysis showed that the surface of the passivation layer between adjacent aluminium pads was covered with impurities, including carbon (C), sodium (Na), aluminium (Al), tungsten (W), and chlorine (Cl) elements. The presence of these conductive elements resulted in leakage between two adjacent aluminium pads on the chip surface that had different electronic potentials. The detachment of bonding wires from the bonding pad is attributed to a chemical reaction caused by vapors. This reaction corrodes the metal aluminium on the bonding pad, leading to the formation of aluminium oxide, causing the gold wire to detach from the pad, and the lifetime of the bonding wire solder joints has been calculated. © The Institution of Engineering & technology 2023.

关键词： Aluminum oxide

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An overview of traditional and deep learning based image segmentation methods

An overview of traditional and deep learning based image seg...

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2024 International Conference on Image Processing and Artificial Intelligence, ICIPAl 2024

作者： Li, Mengxuan Luo, Jun Li, Xiangning Zhao, Yue Xidian University Xi’an China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (纸本)9781510681514

Image segmentation remains a challenging problem in computer vision. Various segmentation methods have been developed, including traditional methods based on threshold, edge, region, and morphology, as well as novel methods based on deep learning. The segmentation precision is continuously improving, and its applications are expanding. Starting with traditional image segmentation methods, we organized their performance and practical application in relation to the demand for segmentation of IC surface defects. We then tested the segmentation of the IC surface defects database we created. However, the final result was unsatisfactory. Therefore, we are continuing to explore segmentation models based on deep learning and summarise their performance evaluation to explore the possibility of applying them to the segmentation of IC surface defects. © 2024 SPIE.

关键词： Image segmentation

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An advanced YOLOv8 method for IC logo detection

An advanced YOLOv8 method for IC logo detection

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2024 International Conference on Image Processing and Artificial Intelligence, ICIPAl 2024

作者： Ding, Chenyu Wang, Zhizhe Luo, Jun Zhao, Shenglei Zhao, Yue Xidian University Xi’an China China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China

ISBN: (纸本)9781510681514

The surface identification of integrated circuit (IC) has not been standardized yet, and the task of detecting IC logos is often carried out manually, which is prone to high subjectivity and low efficiency. Traditional machine learning methods still rely on prior knowledge and handcrafted features, which yield unsatisfactory performance. In order to improve the efficiency of logo detection tasks, this paper constructs a dataset for IC appearance and proposes a deep learning algorithm based on the latest single-stage object detection neural network YOLOv8. By introducing Global Attention Mechanism(GAM) into YOLOv8, the information diffusion is effectively reduced, and the deep information is extracted, allowing the neural network to learn more representative features and further improve the average precision. © 2024 SPIE.

关键词： Object detection

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Research on Internal Defect Detection Algorithm of Ultrasonic Image Based on Attention Mechanism 5

Research on Internal Defect Detection Algorithm of Ultrasoni...

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2023 5th International Conference on Artificial Intelligence and Computer applications, ICAICA 2023

作者： Zhao, Yue Zhang, Qiuzhen Luo, Jun China Electronic Product Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9798350323313

Scanning Acoustic Microscope is a nondestructive and effective technology to detect the internal defects of chips, which is widely used in IC screening. However, at present, the ultrasonic defect detection mainly focuses on traditional visual inspection, which has the disadvantages of low efficiency and high false detection rate. To solve these problems, this paper proposes an ultrasonic defect YOLO detection algorithm by introducing and comparing three common attention modules (SENet, CBAM and ECANet). On the basis of YOLO-v4-tiny model, the attention module is embedded in the feature extraction backbone network to distinguish the importance of different channels in the feature map, strengthen the key features of the target area, and improve the detection accuracy of the network. The experimental results show that the algorithm based on CBAM attention module has better detection accuracy and efficiency. © 2023 IEEE.

关键词： Efficiency

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Effect of Integration Time on the Performance Parameters of InGaAs Detectors

Effect of Integration Time on the Performance Parameters of ...

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2024 Conference on Spectral technology and applications, CSTA 2024

作者： Luo, Xi Liu, Yuebo Zhang, Yichi Lu, Jianting Wei, Zhipeng Yang, Shaohua State Key Laboratory of High Power Semiconductor Lasers Changchun University of Science and Technology Changchun130022 China Reliability Physics and Application Technology of Electronic Component Key Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou511370 China

ISBN: (纸本)9781510683082

Shortwave infrared imaging has the characteristics of high recognition and all-weather adaptation. Consequently, InGaAs short-wave infrared (SWIR) detectors find extensive applications in military and civilian fields, which imposes higher performance demands on InGaAs SWIR detectors. To optimize the performance and effectiveness of InGaAs SWIR detectors, this study delves into the fluctuation patterns of detectivity, responsivity, and dynamic range concerning integration time. Furthermore, it examines the outcomes of these parameters at various integration times. It is observed that the performance of InGaAs SWIR detectors changes at different integration times, and each parameter exhibits specific variation patterns with integration time. © 2024 SPIE.

关键词： Infrared detectors

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Study on Failure Mechanisms of SiC Power Devices Induced by Heavy Ion Irradiation 5

Study on Failure Mechanisms of SiC Power Devices Induced by ...

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5th International Conference on Radiation Effects of electronic Devices, ICREED 2023

作者： Peng, Chao China Electronic Product Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

Radiation-induced degradations of SiC power JBS diodes and MOSFETs are investigated by 181Ta ion irradiation. The failure mode characteristics and failure mechanism of SiC devices are studied through failure analysis ... 详细信息

ISBN: (纸本)9798350358872

关键词： Silicon carbide

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Flexible Noninvasive Broadband Voltage Probe as an Anti-Interference Monitoring Tool

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IEEE Sensors Journal 2025年第11期25卷 20623-20634页

作者： Huang, Qifeng Chen, Yanhao Luo, Chengyang Li, Shasha Wang, Lei Cai, Zongqi Qu, Chenbing Fang, Wenxiao Fernandez-Garcia, Raul Sun Yat-sen University Department of Integrated Circuit Shenzhen518000 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou510610 China Universitat Politècnica de Catalunya Department of Electronic Engineering Barcelona08034 Spain

Noninvasive measurement methods are gradually gaining attention as a monitoring tool for time-domain signals. In this article, a novel noninvasive flexible voltage probe with an operating frequency from 1 MHz to 1 GHz is proposed for monitoring the voltage signals at the input and output ports of a low-noise-amplifier (LNA) module. The flexible probe design and its performance are verified through simulation and experiments. The probe can be pasted to the trace surface for noninvasive voltage measurement. The probe has been verified to operate properly in a strong electromagnetic environment of 24.3 kV/m. The transmission coefficients obtained at different lengths, bending angles, bending times, and long-term bending show high consistency, with an average error of less than 5%. In addition, the reconstructed voltage time-domain curves closely match the directly measured voltages under an injected double-exponential voltage waveform, with an average error of 2.44%. In the application test, the input and output signals coupled by the probe are calculated by the time-domain reconstruction method. It is highly consistent with the theoretical gain value of the LNA. The experimental results show that the flexible probe can be used as a noninvasive time-varying voltage monitoring tool at the port of the LNA module. © 2001-2012 IEEE.

关键词： Probes Voltage measurement Monitoring Transmission line measurements Sensors Couplings Electric fields Time-domain analysis Interference Electromagnetics

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Degradation Evaluation of Neutron Irradiation Effect on AlGaN/GaN Metal-Insulator- Semiconductor High Electron Mobility Transistors 25

Degradation Evaluation of Neutron Irradiation Effect on AlGa...

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25th International Conference on electronic Packaging technology, ICEPT 2024

作者： Duan, Xiaoyue Li, Pinbo He, Liang Shi, Yijun Chen, Xinghuan Ni, Yiqiang Liu, Jun He, Zhiyuan Chen, Yiqiang School of Electrical Engineering University of South China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Hengyang China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China School of Electrical Engineering University of South China Hengyang China School of Integrated Circuits Guangdong University of Technology Guangzhou China

ISBN: (纸本)9798350353808

We investigate the degradation effects of neutron irradiation on AIGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) in this work. The performance of the devices is characterized through relevant electrical current-voltage (I-V) test and capacitance- voltage (C-V) test. The result indicates that the electrical parameter of the device degrades after neutron irradiation, such as positive shift of threshold voltage, reduction in output drain current, and the increase of the on-resistance. Additionally, combining with the frequency-dependent conductance method, it displays that shallow energy level- interface states at the AIGaN/GaN heterojunction increase, along with slightly shifting to deeper energy level after neutron irradiation. Neutron irradiation introduces more interface states and increase the scattering which degrading the carrier concentration and mobility, causing related degradation on electrical performances. This study provides useful reference value for the application of GaN-based devices in the aerospace. © 2024 IEEE.

关键词： Gallium nitride

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Low temperature thermal strain of the IRFPA and the creep lifetime evaluation of solder joints

Low temperature thermal strain of the IRFPA and the creep li...

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2022 Applied Optics and Photonics China: Optoelectronics and Nanophotonics, AOPC 2022

作者： Liu, Yue Bo Yan, Jia Hui Liao, Wen Yuan Niu, Hao Chen, Xi Yu Li, Shu Wang Lai, Can Xiong Yang, Shao Hua Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou511370 China

ISBN: (纸本)9781510662261

Cryogenic Infrared Rays Focal Plane Array (IRFPA) detectors have been widely used in industry, transportation, security monitoring, meteorology and medicine because of the high sensitivity and temperature resolution. For HgCdTe IRFPA detectors, the typical working temperature is about 80 K. To make the IRFPA detector works at low temperatures, the detector should be integrated on a Dewar cold platform, whose refrigeration power would be higher than the heat load of the IRFPA. In general, the IRFPA detector and the Dewar cold platform would be integrated together to form a Dewar assembly at room temperature. In addition, the materials in IRFPA have different thermal expand coefficients, it means the thermal mismatch in the IRFPA would be an unavoidable issue in work. The thermal strain has a significant effect on the solder joints in switching cycle, which could lead to the creep strain and thermal fatigue crack. With the increase of the switch cyclic number, the creep strain and thermal fatigue crack under the thermal stress would lead to the failure of solder joints. Therefore, the low temperature thermal strain in switching cycle can affect the reliability of IRFPA detectors. So, the low temperature thermal strain and the creep lifetime of solder joints has been researched. © 2023 SPIE.

关键词： Dewars

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