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2023 Advanced Fiber Laser Conference, AFL 2023

作者： Yu, Qirui Zhang, Zhan'Gang Li, Bin Zheng, Shunshun Lin, Jianjun Wu, Zhaohui Lei, Zhifeng Peng, Chao Ma, Teng School of Microelectronics South China University of Technology Guangzhou511442 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou511370 China Gowin Semiconductor Corporation Guangzhou510700 China

ISBN: (纸本)9781510677661

Accelerated tests for Single Event Effect (SEE) that irradiate the target with far higher fluence beam are typically applied to investigate the device sensitivity to atmospheric neutron. Considering the neutrality and strong penetrability of neutron, devices are frequently placed in parallel to save time. For nanoscale devices, however, the results may be significantly influenced. The possibility of applying multiple-board parallel testing in accelerated experiments of atmospheric-neutron-induced soft errors was investigated using a 22-nm Static Random-Access Memory (SRAM) Field Programmable Gate Array (FPGA). To simplify the analysis, several empty Printed Circuit Boards (PCBs) were employed as the upstream boards. Both Block Random-Access Memory (BRAM) and Configuration Random-Access Memory (CRAM) were tested under the neutron beam provided by Atmospheric Neutron Irradiation Spectrometer (ANIS), showing similar results. For high-energy neutrons, device sensitivity decreases as the number of upstream PCBs increases, although the influence seems weak. The drop in cross sections from no-PCB to 20-PCBs is less than 30% for both modules. For thermal neutron testing, however, its sensitivity was greatly suppressed by PCBs. Epoxy resin contained in PCBs is considered to be the key factors for these phenomena due to its high content of hydrogen. Also, neutron can be scattered by copper to lose energy or even be absorbed by it. As a result, the actual fluence of the neutron reaching the device was reduced. Therefore, parallel testing may not be suitable if thermal neutrons need to be considered, but it is practicable for high-energy neutron testing with proper correction algorithms applied. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Neutrons

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Electromagnetic Pattern Cluster in Latent Space in Near Filed Scanning of a Device 5

Electromagnetic Pattern Cluster in Latent Space in Near File...

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5th International Conference on Algorithms, Computing and Artificial Intelligence, ACAI 2022

作者： Huang, Quan Wu, Yuxin Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute China

ISBN: (纸本)9781450398343

Electromagnetic pattern is an image generated from near field electromagnetic field of a device such as microprogrammed control unit (MCU) when it is working. Many Electro-Magnetic Interference (EMI) sources can be located using the electromagnetic patterns. The cluster of electromagnetic patterns is helpful to distinguish the types of EMI, and problems caused by the same EMI are basicly addressed in the same way. Different frequencies in integrated circuite (IC) can have the same electromagnetic patterns, especially for those frequencies that are multiple integer of a small frequency called the basic frequency. The magnitude of electromagnetic pattern becomes weak when the the corresponding frequency gets higher, which makes the EMI source cluster inaccurate. To tackle this problem, we cluster the electromagnetic patterns in the latent space. © 2022 ACM.

关键词： Electromagnetic fields

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Determination of blind elements of InGaAs short-wave infrared focal plane detector with high effective pixel rate for low-orbit satellite communication based on dark signal voltage change rate and sliding window detection

Determination of blind elements of InGaAs short-wave infrare...

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2023 Advanced Fiber Laser Conference, AFL 2023

作者： Liu, Yuebo Wang, Meng Luo, Xi Wang, Hongyue Lai, Canxiong Yang, Shaohua Lu, Guoguang Ma, Teng Reliability Physics and Application Technology of Electronic Component Key Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou511370 China Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou Institute of Technology Xidian University Guangzhou510555 China State Key Laboratory of High-Power Semiconductor Lasers Changchun University of Science and Technology Changchun130022 China

ISBN: (纸本)9781510677661

The effective pixel rate is a key performance parameter of infrared focal plane detectors and is also a key parameter for assessing the reliability degradation trend of the device. The application scenario of InGaAs short wavelength infrared focal plane detectors for interstellar alignment is different from that of conventional imaging detectors, where the signal values of each pixel of the focal plane are mainly used to determine the position of the laser bright spot, rather than the gray values used to generate the image. From the point of view of blind element evaluation, for the low-orbit satellite communications application scenario, the rate of change of the response values of the image elements in each local region of the InGaAs short-wave infrared focal plane detector for interplanetary alignment with optical flux has a greater impact on the performance of the device than the absolute response values of the image elements. In order to adapt to this evaluation requirement, this work designs a sliding window blind element determination method based on the rate of change of the dark signal voltage for the intrinsic characteristics of the detector, which utilizes the principle of equivalence of the effects of luminous flux and integration time on the detector signal voltage value, which is more adaptable to the practical application scenarios of interstellar-aligned shortwave infrared focal plane detectors, and the entire focal plane is divided into a number of localized regions, and the sliding detection window is used for blind element determination, which avoids the fully aligned shortwave infrared focal plane detector. Blind meta-judgment, which avoids the phenomenon of misjudgment that often occurs in global judgment. This blind judgment method is also of great importance for the reliability evaluation of InGaAs shortwave infrared focal plane detectors with high effective pixel rate for interstellar alignment. © COPYRIGHT SPIE. Downloading of the abstract i

关键词： Orbits

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IGBT Performance Degradation Feature Construction and Real-Time Prediction Based on Machine Learning 17th

IGBT Performance Degradation Feature Construction and Real-T...

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17th Annual Conference of China Electrotechnical Society, CES 2022

作者： Wang, Xin Zhou, Zhenwei He, Shilie Jia, Hanguang Huang, Yun The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Institute Guangzhou510610 China School of Automation and Engineering South China University of Technology Guangzhou510641 China

ISBN: (纸本)9789819903566

Insulated gate bipolar transistor (IGBT) has developed rapidly in recent years, and its performance is excellent in high voltage, high current and high frequency applications, which makes it been regarded as an ideal power module. However, due to the long-term operation in harsh conditions, the degradation of IGBT occurs from time to time, which will cause irreversible damage to electronic equipment and even affect the normal operation of the whole system. Therefore, it is necessary to establish a reliable IGBT anomaly detection system and apply the performance degradation prediction technology to the prediction of IGBT in the whole life cycle. In this paper, based on the data-driven method of degradation characteristic parameters, combined with grey correlation degree, Mahalanobis distance, Kalman filter, support vector regression and other methods, the performance degradation prediction of IGBT is completed and the above methods are verified and analyzed based on NASA public data. © 2023, Beijing Paike Culture Commu. Co., Ltd.

关键词： NASA

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Fault Information Mining in Avionics components Based on Unstructured Data 14

Fault Information Mining in Avionics Components Based on Uns...

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14th International Conference on reliability, Maintainability and Safety, ICRMS 2023

作者： Zhou, Zhenwei Liu, Junbin He, Shilie Li, He Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Institute Guangzhou511370 China Guangzhou Institute of Technology XD University Huangpu District Guangzhou510555 China

ISBN: (纸本)9798350329988

To address the requirements of unstructured fault data mining and statistical analysis of avionics systems, this study excavates implicit knowledge, investigates potential knowledge associations, and realizes a deep understanding of knowledge to better interpret data. Combined with recent progress of text data extraction technology, this paper studies the entity relationship extraction and failure time statistical method based on attention-based bidirectional long short-term memory to realize the statistical analysis of failure time law of components. In this study, 413 cases of unstructured fault data of avionics system components were collected, and the entity relationship extraction and failure statistical methods proposed in this paper were verified and analyzed. The results showed that the components would have a high probability of failure within 10,000 hours of each flight, and the number and time of multi-function control display failures were high. This paper proposes an unstructured data analysis method for avionics systems, which can provide a reference for a maintenance engineer, provide a basis for the management decision-making of avionics maintenance institutions, and improve the maintenance quality of avionics systems. © 2023 IEEE.

关键词： Decision making

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A New Resonant Composite Probe for Near-field Scanning 15

A New Resonant Composite Probe for Near-field Scanning

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15th International Conference on Microwave and Millimeter Wave technology, ICMMT 2023

作者： Nie, Duan Wang, Rui-Qi Wang, Lei Shaanxi University of Science and Technology School of Electronic Information and Artificial Intelligence Xi'an710021 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Ceprei Guangzhou511370 China

ISBN: (纸本)9798350338874

In this article, a new wideband resonant probe with two orthogonal magnetic-field measurement features is proposed. The resonant magnetic-field probe consists of two orthogonal shorted sensing loops, two transmission lines with two outputs, a pair of LC resonant circuits, a shorted via, a connected via, and two rows of coaxial via fences. The LC resonant circuits including a pair of shorted stubs as additional inductor and open stubs as additional capacitor are used to excite resonant mode. The connected and shorted vias are used to form the orthogonal sensing loops. In order to verify the design rationality, the proposed probe is optimized, manufactured, and measured. The simulated results reveal the proposed probe could simultaneously test two orthogonal magnetic-field components at 1.575 GHz. © 2023 IEEE.

关键词： Resonant circuits

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Analytical and Measurement-Based Method for Voltage Fault Injection of CAN Chip Security 6

Analytical and Measurement-Based Method for Voltage Fault In...

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6th International Conference on electronics technology, ICET 2023

作者： Wang, Naiye Qu, Chenbing Hou, Bo Wang, Liwei Sun, Chen China Electronic Product Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China Hunan Institute of Engineering School of Computational Science and Electronics Xiangtan China

ISBN: (纸本)9798350337693

The need for CAN chip dependability is growing urgent due to the widespread use of CAN bus in numerous sectors and professions. This word presents an analytical method of voltage fault injection measurement-based CAN chip security. The automatic hardware FI test method based on the prototype system is proposed to detect the fault error in abnormal environment. The signal trigger and control module is designed to test automation process. In addition, the extended parameter model is established for shortening test time and automatic statistical analysis of a number of test data. The results show that the test circuit system CAN realize the voltage random fault test and automatic analysis in the range of 1.5 ∼ 5.5V, which provides a more accurate and comprehensive basis for improving the security of CAN chip. © 2023 IEEE.

关键词： Software testing

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Using Load Transient Waveform to Analyze Fault Propagation Mechanism in DC-DC Switching Power Supply

Using Load Transient Waveform to Analyze Fault Propagation M...

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2024 Photonics and Electromagnetics Research Symposium, PIERS 2024

作者： Wan, Junliang Yu, Pengfei Cai, Qiang-Ming Cao, Xin Zhou, Longjian Li, Haoran Zhu, Yuyu Fan, Jun Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component Guangzhou China Southwest University of Science and Technology School of Information Engineering Mianyang China Robot Technology Used for Special Environment Key Laboratory of Sichuan Province Mianyang China Tianfu Institute of Research and Innovation China

ISBN: (纸本)9798350375909

The degradation of certain components within DC-DC power supplies can lead to abnormal performance, resulting in the occurrence of faults. The degradation of components can cause changes in output voltage and current, and the different degradation characteristics of components have different impacts on the characteristics of output parameters. Therefore, it is necessary to master this impact relationship, that is, the fault propagation mechanism can be used to effectively diagnose faults and manage health. Studying the fault propagated mechanism is an important prerequisite for fault diagnosis. Output terminals of DC-DC power supply are usually connected in parallel with electrolytic capacitors. The function of electrolytic capacitors is to filter, filtering out most of the AC part of the output voltage, and reducing the ripple of the output voltage. Electrolytic capacitors are the most vulnerable components to failure in switching power supplies, with approximate 60% of failed components being electrolytic capacitors. Therefore, the fault propagation mechanism of electrolytic capacitors is a key research topic. Most research focuses on the fault propagation mechanism based on steady-state output signals. This article studies the fault propagation mechanism based on transient output signals. Through experimental testing, the impact of parameter degradation of electrolytic capacitors on the transient waveform of output voltage and the mapping relationship between capacitor degraded parameters and transient waveform are studied. The method is to analyze the voltage waveform when the current step changes using equivalent degradated experiments of capacitors. Its advantage lies in the fact that transient waveforms are more sensitive than steady-state waveforms and require lower sampling rates, making it easier to analyze the degradated characteristics of electrolytic capacitors. For power supplies with simple structures, data is collected through simulation. For commerc

关键词： Capacitor bank

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Analytical and Measurement-Based Method for Diagnosing the Fault of Channels in TSV-Based 3D ICs 1

Analytical and Measurement-Based Method for Diagnosing the F...

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2022 1st International Conference on Advances in Modern physics Sciences and Engineering technology, ICPSET 2022

作者： Qu, Chenbing Zheng, Linting Wang, Liwei Sun, Chen Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou511370 China

Three-dimensional integrated circuits (3D ICs) based on through silicon via (TSV) technology can effectively solve many bottlenecks in the development of ICs. It has rapidly developed into a key cutting-edge technology representing the medium and long-term sustainable development of microelectronics industry. Process fluctuation causes TSV process defects, resulting in the change of structural parameters of RDL and TSV interconnection structure. Finally, it leads to the degradation of performance parameters and functional failure of 3D interconnection and devices. Aiming at the high-resistance and open-circuited faults of 3D ICs, this paper develops an analysis method based on micro nano machining and detection technology. The electrical characteristics and images of typical chain TSV interconnections are analyzed by scanning electron microscope high-resolution imaging. The mechanism of fault diagnosis is based on potential difference and electron transfer. © Published under licence by IOP Publishing Ltd.

关键词： Three dimensional integrated circuits

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A K/Ka-Band Frequency Reconfigurable GaN LNA for Multi-Band Communication applications

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Chinese Journal of electronics 2025年第3期34卷 739-748页

作者： Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz School of Electronic and Information Engineering South China University of Technology Guangzhou 510641 China Guangdong-Hong Kong-Macao Joint Laboratory for Millimeter-Wave and Terahertz School of Electronic and Information Engineering South China University of Technology Guangzhou 510641 China Department of National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou 510610 China

A frequency reconfigurable low noise amplifier (LNA) in a 0.15-μm gallium nitride (GaN) high-electron-mobility-transistor process is presented. The concept of frequency reconfiguration utilizing a switch-based reconfigurable resonator (SBRR) to adjust the resonant frequency and introduce a transmission zero in the lower out-of-band region is discussed. Additionally, a K/Ka-band frequency-reconfigurable LNA that incorporates the SBRR is designed and fabricated for validation. The proposed LNA features a small-signal gain of 13.9/8.9 dB and a noise figure of 2.4/3.2 dB at 21/30 GHz. The measured output power 1-dB compression point (OP1-dB) is 5.5/6.7 dBm at 21/30 GHz, respectively. The chip size is 1.5 × 1.75 mm2. The reconfigurable GaN LNA is attractive for future multi-band communication systems compatible for multiple standards.

关键词： Gallium nitride (GaN) Low noise amplifier (LNA) Monolithic microwave integrated circuit Reconfigurable Multi-band

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