检索结果-内蒙古大学图书馆

Templated synthesis of patterned gold nanoparticle assemblies for highly sensitive and reliable SERS substrates

Nano Research 2023年第4期16卷 5056-5064页

作者： Jianping Peng Peijiang Liu Yutong Chen Zi-Hao Guo Yanhui Liu Kan Yue South China Advanced Institute for Soft Matter Science and Technology School of Emergent Soft MatterSouth China University of TechnologyGuangzhou 510640China National Key Laboratory for Reliability Physics and Its Application Technology of Electrical Component the 5th Electronics Research Institute of the Ministry of Information IndustryGuangzhou 510610China College of Textiles&Clothing Laboratory of New Fiber Materials and Modern TextileState Key laboratory of Bio-Fibers and Eco-TextilesQingdao UniversityQingdao 266000China

Formation of plasmonic structure in closely packed assemblies of metallic nanoparticles(NPs)is essential for various applications in sensing,renewable energy,authentication,catalysis,and ***,a surface-enhanced Raman scattering(SERS)substrate is fabricated for trace detection with ultrahigh sensitivity and *** SERS substrate is constructed from a simple yet robust strategy through in situ growth patterned assemblies of Au NPs based on a polymer brush templated synthesis *** from the dense and uniform distribution of Au NPs,the resulting Au plasmonic nanostructure demonstrates a very strong SERS effect,while the outer polymer brush could restrict the excessive growth of Au NPs and the patterned design could achieve uniform distribution of Au *** results,an ultra-low limit of detection(LOD)of 10^(−15)M,which has never been successfully detected in other work,is determined for 4-acetamidothiophenol(4-AMTP)molecules and the Raman signals in the random region show good signal homogeneity with a low relative standard deviation(RSD)of 7.2%,indicating great sensitivity and reliability as a SERS *** LOD values of such Au plasmonic nanostructures for methylene blue,thiram,and R6G molecules can also reach as low as 10^(−10)M,further indicating that the substrate has a wide range of applicability for SERS *** the help of finite difference time domain simulations(FDTD)calculation,the electric field distribution of the Au plasmonic nanostructures is simulated,which quantitatively matches the experimental ***,the Au plasmonic nanostructures show good shelf stability for at least 10 months of storage in an ambient environment,indicating potentials for practical applications.

关键词： templated synthesis patterned Au nanostructures surface-enhanced Raman scattering polymer brush plasmonic nanostructures

来源：评论

学校读者我要写书评

暂无评论

Non-destructive measurement of temperature in the micro-area wafer using Mueller matrix spectroscopic ellipsometry 8

Non-destructive measurement of temperature in the micro-area...

引用

8th International Workshop on Advanced Patterning Solutions, IWAPS 2024

作者： Sun, Qimeng Jin, Xing Ma, Bingxu Lei, Zhidan Liu, Xiaoli Peng, Jun Yang, Lin Calibration and Testing Center China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510000 China The Test Center of Electronic Components China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510000 China The Science and Technology on Reliability Physics Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510000 China The Institute of Technological Sciences Wuhan University Wuhan430072 China

ISBN: (数字)9781510686335

ISBN: (纸本)9781510686328

As the number of 3D stacking layers continues to increase and the thermal design power of logic chips escalates, thermal management is confronted with unprecedented challenges. The temperature of the surface to be treated is also a parameter that is difficult to measure non-invasively. The standard technique is infrared (IR) pyrometry. However, due to the transparency of Si wafers in the IR spectrum, it cannot be used in the low-temperature regime (0℃ ~ 400℃). In this study, a new low-temperature thermal measurement method was developed, utilizing Mueller matrix spectroscopic ellipsometry (MMSE) combined with thermo-optical coefficients (TOC). Firstly, the coefficients of the Cauchy dispersion equation for Si-based SiO2 films were measured at different temperatures. The experimental results indicated that the refractive index of SiO2 films exhibits high sensitivity to temperature in the ultraviolet to visible spectra. Subsequently, MMSE was combined with deep learning to reverse characterize the temperature in the chip overlay region. The results indicated that effective Mueller matrix elements and multi-channel deep learning could accurately identify the temperature in the overlay region, with an accuracy of 99.81% and a recognition precision of 1K. The proposed method contributes to optimizing automatic process control, alleviating wafer deformation and overlay errors caused by thermal management, thereby enhancing the reliability of high-bandwidth memory. © 2024 SPIE.

关键词： Silicon wafers

来源：评论

学校读者我要写书评

暂无评论

Heavy Ion-Induced Permanent Damage in Cascode Power GaN HEMTs

引用

IEEE Transactions on Nuclear Science 2025年

作者： Peng, Chao Yang, Jianqun Lei, Zhifeng Cui, Xiuhai Ma, Teng Zhang, Zhangang He, Yujuan Chen, Yiqiang Lu, Guoguang Hu, Xianghong China Electronic Product Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou511370 China Harbin Institute of Technology National Key Laboratory of Material Behavior and Evaluation Technology in Space Environment Harbin150001 China

Heavy ion-induced leakage current increase is reported for a cascode gallium nitride (GaN) high-electron-mobility-transistor (HEMT), which is related to the damages between gate and drain of the embedded depletion-mode GaN HEMT. The local high temperature-induced damage near the drain contact may be directly related to the leakage degradation. The influences of drain bias and temperature on the leakage increase degradation are investigated by irradiation experiments and technology computer aided design (TCAD) simulations. Radiation-induced gate rupture is also observed for the cascode GaN HEMT during Bi ion irradiation with high linear energy transfer (LET) value. Although the depletion-mode GaN HEMT is the most sensitive component to heavy ion irradiation in the cascode GaN HEMT system, there is also a risk of failure for the Si MOSFET component. © 1963-2012 IEEE.

关键词： Gallium nitride

来源：评论

学校读者我要写书评

暂无评论

Investigation on the Degradation Mechanism of AlGaN/GaN HEMTs under the Effect of Microwave Pulses at Different Powers 14

Investigation on the Degradation Mechanism of AlGaN/GaN HEMT...

引用

14th IEEE Global reliability and Prognostics and Health Management Conference, PHM-Hangzhou 2023

作者： Yang, Fanfeng Liao, Min Zeng, Binjian Yang, Peiliang Chen, Yiqiang College of Materials Science and Engineering Xiangtan University Xiangtan China The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9798350301359

We have investigated the effect of microwave pulse stress of different powers on AlGaN/GaN HEMTs. The dc characteristics of the devices were first scrutinized. The results indicate that the electrical characteristics of the devices are degraded after stress. The saturation drain-source current decreases from 681.8 mA to 246.5 mA, a decrease of 63.8 %, at the power 40 dBm. And at the power 45 dBm, the saturation drain-source current drops even more, from 662.3 mA to 176.7 mA, a drop of 73.3 %. The stress results in significant positive drift of threshold voltage and decrease of gate leakage current. And the degradation is more obvious with increasing microwave pulses power. Then, the internal defects of the device are characterized by low-frequency noise method, and the mechanism of device degradation is discussed. At the power of 45 dBm, the internal defect density of the device doubles, resulting in more electrons being captured at the channel. This is useful for the reliability level of future devices and practical applications. © 2023 IEEE.

关键词： AlGaN/GaN HEMTs degradation low-frequency noise microwave pulses power

来源：评论

学校读者我要写书评

暂无评论

Study on the effect of self-heating effect of bulk acoustic wave filter on the interpolation loss in the band

引用

International Journal of Nanomanufacturing 2023年第3-4期18卷 178-188页

作者： Ruan, Bin Liu, Tingting Yang, Shaohua Huang, Qinwen Wu, Ming Shao, Weiheng School of Information Engineering Southwest University of Science and Technology No. 59 Qinglong Road Sichuan Province Mianyang621010 China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability Environmental Testing Research Institute Guangdong Province Guangzhou510610 China Pandhus Microsystem Co. Ltd. Innovation Centre Phase 2 Room 301 Building 3 Science and Technology Business Park Sichuan Mianyang China

The self-heating effect occurs when the bulk acoustic wave filter is loaded with power, leading to the deterioration of the insertion loss. In this paper, the self-heating effect of bulk acoustic wave filters at high frequency power is investigated. A test system is built to obtain the maximum surface temperature and the insertion loss of the bulk acoustic wave filter at different power levels. The test results show that the self-heating effect causes the internal temperature of the bulk acoustic wave filter to increase further after increasing the power, resulting in the increase of the insertion loss. The test system and analysis method in this paper verify the relationship between the self-heating effect and the insertion loss, and can provide guidance for the construction of the relevant reliability test system of the bulk acoustic wave filter. Copyright © The Author(s) 2023. Published by Inderscience Publishers Ltd.

关键词： Deterioration

来源：评论

学校读者我要写书评

暂无评论

Experimental Investigation on Avalanche Robustness of SiC MOSFETs in the Aging Process 4

Experimental Investigation on Avalanche Robustness of SiC MO...

引用

4th International Conference on Power and Energy technology, ICPET 2022

作者： Li, Kaiwei Sun, Pengju Wu, Shuo He, Zhiyuan Chongqing University State Key Laboratory of Power Transmission Equipment and System Security and New Technology Chongqing China China Electronic Product Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (数字)9781665480796

ISBN: (纸本)9781665480796

In this paper, the long-term avalanche energy withstanding ability of commercial 1.7-kV 4H-SiC MOSFETs in the process of bipolar degradation is systematically evaluated and analyzed. The test benches are constructed for bipolar degradation tests and unclamped inductive switching (UIS) tests. The experimental results show that the on-resistance of devices appears significant increment with the increasing stress time. Tacking the increment of on resistance as the indicator, the SiC MOSFETs are divided into three aging degrees, and the avalanche withstand energy decreases gradually with the aging of the devices. Moreover, the safe avalanche operation area (SOA) is established in the aging process. © 2022 IEEE.

关键词： Silicon carbide

来源：评论

学校读者我要写书评

暂无评论

Simulation and experiment of microstrip lines temperature rise based on COMSOL Multiphysics 7

Simulation and experiment of microstrip lines temperature ri...

引用

7th IEEE International Symposium on Electromagnetic Compatibility, ISEMC 2023

作者： Huang, Lijuan Liao, Jinfu Fang, Wenxiao Wang, Jianying School of Electronic and Information Engineering South China Normal University Foshan China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China School of Integrated Circuit Sun Yat-Sen University Guangzhou China

ISBN: (纸本)9798350333107

Conductor loss and dielectric loss of the microstrip line can lead to temperature rise and limit the power capacity of the microstrip circuit. This involves the interaction (coupling) between the electric and temperature fields. In this study, the factors affecting the temperature rise of the microstrip line were analyzed by means of the parallel plate model. In addition, based on COMSOL Multiphysics simulation software, the influence of dielectric dissipation factor tanδ of microstrip lines of FR4 and RO4350B on the temperature rise per unit input power (TRPIP) was simulated. The simulation results under the set basic parameters show that the TRPIP of the strip conductors of the FR4-substrate microstrip lines with tanδ of 0.02 is about 4.8 °C, and that of RO450B-substrate microstrip lines with tanδ of 0.0037 is about 1.38 °C. Finally, in order to verify the simulation results, a non-invasive measuring device with an infrared camera was constructed to measure the heat distribution on the surface of the microstrip line. © 2023 IEEE.

关键词： Multiphysics

来源：评论

学校读者我要写书评

暂无评论

Analysis of Power Cycle Aging Test for SiC MOSFET 14

Analysis of Power Cycle Aging Test for SiC MOSFET

引用

14th IEEE Global reliability and Prognostics and Health Management Conference, PHM-Hangzhou 2023

作者： Zheng, Zhouyou Meng, Linghui Li, Xin Ruan, Bin Cui, Haotian School of Electrical and Information Engineering Anhui University of Science and Technology Anhui Huainan China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guang dong Guang zhou China School of Information Engineering Southwest University of Science and Technology Mianyang China

ISBN: (纸本)9798350301359

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are gradually replacing silicon (Si)based devices as the core devices for power conversion in high-temperature, high-pressure, and high-frequency applications due to their superior material properties. The long-term reliability of SiC MOSFETs has become a research focus. Power cycling tests, an important aging test for evaluating device reliability, can reflect the reliability under real working conditions to some extent. The test is conducted using a constant on/off time mode, and the on-state resistance and body diode voltage drop of the devices are measured online during the aging test. The experimental results show that an increase in on-state resistance during power cycling tests causes an increase in junction temperature, which leads to wire bond aging and eventually results in SiC MOSFET failure. © 2023 IEEE.

关键词： failure mechanism junction temperature measurement power cycling test SiC MOSFET

来源：评论

学校读者我要写书评

暂无评论

Research on Intelligent Detection Method for IC Surface Defects Based on Convolutional Neural Network

Research on Intelligent Detection Method for IC Surface Defe...

引用

International Conference on (ICEPT) electronic Packaging technology

作者： Yue Zhao Hongfeng Lv Zhizhe Wang Jun Luo Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

Surface Defects Detection of integrated circuit (IC) is one of the important means to ensure the quality and reliability of components. Nowadays, most inspection institutions mainly rely on manual visual inspection, with disadvantages such as poor accuracy, low efficiency, and susceptibility to subjective factors. However, insufficient image data of typical defects in IC products and missing tag databases are key obstacles in the process of promoting intelligent appearance inspection. Therefore, this paper proposes a data construction technology for IC surface defects, designs a unified image processing process, and forms a computer-available component appearance defect database using labeling software. The database contains 7 categories of metal packaging IC and 4 defect types. On this basis, this paper uses different defect detection models to test the availability of the database, and conducts comparative experiments to analyze the model detection capabilities. The experimental results show that the designed defect image database can achieve intelligent detection applications for IC surface defects.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Laser Induced Single Event Upset (SEU) Testing of Commercial Memory Devices with Embedded Error Correction Codes (ECC) 5

Laser Induced Single Event Upset (SEU) Testing of Commercial...

引用

2022 5th International Conference on Power electronics and Control Engineering, ICPECE 2022

作者： Han, Yang Liu, Yurong Lei, Zhifeng Zhang, Zhangang He, Yujuan School of Electronic and Information Engineering South China University of Technology Guangzhou510641 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou511370 China

Results of laser-induced single event upset testing of devices with embedded error correction codes are described. Specifically, the memory system, consisting of a Micron MT41K256M16TW-107 IT: P 32 Meg×16×8 banks Dual Dynamic Random Access Memories (DDRs) was tested on a self-made test board. Two samples of each memory system or device type were irradiated with a pulsed laser. The units were irradiated by using a continual read/write correct loop in several bit patterns. Results for both correctable and uncorrectable errors are presented along with soft error data records. © Published under licence by IOP Publishing Ltd.

关键词： Pulsed lasers

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：