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3rd IEEE International Conference on problems of Informatics, Electronics and Radio Engineering, PIERE 2024

作者： Djigan, Victor I. National Research Center 'Kurchatov Institute' Department of Design Problems in Microelectronics Moscow Russia

ISBN: (纸本)9798331516321

An adaptive antenna array of the land-based equipment of the Global Navigation Satellite System has to be able to accept the signals from a several satellites and to suppress a several interfering signals simultaneously. The side lobe canceller is one of the widely used adaptive arrays to do this job. Unfortunately, this array does not ensure any specified value of its radiation pattern towards any direction except the directions towards the interfering signal sources. As a result, this array does not ensure the same conditions for the reception of the signals from all visible satellites. The problem solution, which is proposed in this paper, is to use the linearly constrained array instead of the side lobe canceller. A single constraint in a form of a fixed radiation pattern value towards the normal to the array aperture (zenith direction) allows to produce a beam which is always steered towards this direction in spite of the radiation pattern changing caused by the interfering signals cancellation. This ensures a stable reception of the signals at least from the satellites whose angular locations are within the array beam. The performance of a circular linearly constrained array and a circular side lobe canceller of the nine omnidirectional antennas is compared by means of simulation. A better performance of the circular linearly constrained array comparing to the circular linearly constrained array is demonstrated. This is ensured by a wider beam with a bigger gain of the linearly constrained array. This beam allows to receive the signals from a larger number of visible satellites. These results suggest a preferable usage of the linearly constrained arrays against the side lobe cancellers in the receivers of the Global Navigation Satellite System. © 2024 IEEE.

关键词： Omnidirectional antennas

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Features of TCAD and SPICE Simulation of a Charged Particle Impact into a 6T SRAM Cell Manufactured Using the CMOS 28-nm Technology Node

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Russian microelectronics 2024年第7期53卷 737-743页

作者： Petrosyants, K.O. Silkin, D.S. Popov, D.A. Ismail-Zade, M.R. Kharitonov, I.A. Pereverzev, L.E. Morozov, A.A. Turgenev, P.V. National Research University Higher School of Economics Moscow Russia Institute for Design Problems in Microelectronics Russian Academy of Sciences Moscow Russia ООО AlphaCHIP Moscow Russia

Abstract—: With a decrease in the size of transistors, the conditions arise when the impact of one particle affects several transistors in the composition of a memory cell. Therefore, during simulation it is not sufficient to take into account one transistor directly hit by a particle. In this study, a full-size 3D model of two n-channel transistors that are part of a 6T memory cell in which the charged particle enters is considered. A particle impact simulation procedure is proposed that makes it possible to calculate the current pulse after the impact in a TCAD simulator and the response of memory cell circuit to an impact in a SPICE simulator using SPICE models. This procedure allows combining the advantages of the TCAD and SPICE calculations and achieve consistency between accuracy and the speed of simulation. The issues of determining the parameters of the TCAD model of a particle impact, the occurrence of a current pulse after a particle impact near a transistor in the on state, and the influence of the current of this transistor on the operation of a memory cell are considered. A technique of specifying the complex distribution profiles of charge carriers induced by particle impact in a TCAD simulator is proposed. Several cases of particle impact with different linear energy transfer (LET) values are simulated and an example of determining the critical LET value for a 6T SRAM cell with a design code of 28 nm is shown. The tailored parameters of the physical structure of the transistor make it possible to simulate the characteristics of transistors manufactured using the 28-nm CMOS technology node. © Pleiades Publishing, Ltd. 2024.

关键词： CMOS integrated circuits

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Automatic FPGA Placement Configuration for Customer designs

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Russian microelectronics 2022年第7期51卷 579-584页

作者： Enns, V.I. Gavrilov, S.V. Chochaev, R. Zh. Research Institute of Molecular Electronics Moscow124460 Russia Institute for Design Problems in Microelectronics Russian Academy of Sciences Moscow124681 Russia

Abstract: Specialization of configurable heterogeneous ICs for specific customer proposals requires the flexibility of design and technological solutions. This, in turn, leads to the necessity of the automatic adjustment of CAD, including software placement tools, on the changes made. The development of efficient methods and tuning algorithms is impossible without relying on the appropriate mathematical apparatus. This study presents a set-theoretic mathematical model of a hierarchical project and formalizes a hierarchical approach to the netlist using the apparatus of set theory, mathematical logic, and graph theory. To ensure quick configuration of clustering and placement software tools, taking into account the changes made to the basic design, the correspondence between the elements of the basic FPGA design and user-designed circuits from the end user is formalized. The obtained results can serve as a base for the development of the efficient methods and algorithms for the automatic tuning of software clustering and placement tools. © 2022, Pleiades Publishing, Ltd.

关键词： Field programmable gate arrays (FPGA)

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Pathfinder Algorithm Modification for FPGA Routing Stage

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Russian microelectronics 2022年第7期51卷 573-578页

作者： Zapletina, M.A. Gavrilov, S.V. Institute for Design Problems in Microelectronics of the Russian Academy of Sciences Moscow Russia National Research University of Electronic Technology Moscow Russia

Abstract: One of the main advantages of FPGA design flow is the high development speed;therefore, the importance of effective computer-aided design tools for modern microcircuits of these classes cannot be overestimated. Placement and routing are the most time-consuming stages of FPGA design flow. The quality of results of these stages is crucial to the final performance of custom digital circuits implemented on FPGA. The paper discusses an approach to accelerating the routing stage within the layout synthesis flow for FPGA by introducing a few algorithmic improvements to a routing procedure. The basic routing algorithm under study is a modified Pathfinder for a mixed routing resources graph. Pathfinder is a well-known negotiation-based routing algorithm that works on the principle of iteratively eliminating congestions of chip routing resources. The sets of test digital circuits ISCAS’85, ISCAS’89, LGSynth’89 and several custom industrial projects were used for computational experiments. The impact of the proposed algorithmic improvements was analyzed using four FPGA architectures. It has been established that due to the improvements of the algorithm proposed in the paper, the average reduction in routing time was from 1.3 to 2.6 times, depending on the FPGA architecture, with no significant negative effect on the timing characteristics of the designed circuits. © 2022, Pleiades Publishing, Ltd.

关键词： Field programmable gate arrays (FPGA)

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TCAD Modeling of Nanoscale FinFET Structures on Bulk Silicon, Taking into Account the Effects of Radiation

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Russian microelectronics 2022年第7期51卷 545-551页

作者： Petrosyants, K.O. Silkin, D.S. Popov, D.A. Li, Bo Zhang, Xu National Research University Higher School of Economics Moscow Russia Institute for Design Problems in Microelectronics Russian Academy of Sciences Moscow Russia Institute of Microelectronics Chinese Academy of Sciences Beijing China

Abstract: The transition from planar MOSFET structures to 3D FinFET structures provides resistance to various types of radiation. However, the characteristics of irradiated devices created at different manufacturers differ significantly, and it is rather difficult to explain the dependence of the radiation resistance of FinFE-T structures on variations in their physical and topological parameters and electrical modes. We develop a radiation version of the TCAD model of a FinFET MOSFET on bulk silicon. Additional semiempirical radiation dependences specific for FinFET structures for the effective mobility of charge carriers and the concentration of traps in the volumes of SiO2 and HfO2 oxides and at the oxide–silicon interfaces are introduced in the basic model of a nanometer MOSFET. The model is implemented in the Sentaurus Synopsys TCAD environment. The model is validated on a test set of FinFET structures with a channel length of 60 to 7 nm without irradiation and in the range of gamma irradiation doses up to 1 Mrad. A comparison of the static current-voltage characteristics obtained by simulation with the experimental results showed an error not exceeding 15%. © 2022, Pleiades Publishing, Ltd.

关键词： Ionizing radiation

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Evaluation of the Effect of FinFET Structure Parameters on Electrical Characteristics Using TCAD Modeling Tools

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Russian microelectronics 2022年第8期51卷 644-648页

作者： Petrosyants, K.O. Silkin, D.S. Popov, D.A. National Research University Higher School of Economics Moscow101000 Russia Institute for Design Problems in Microelectronics Russian Academy of Sciences Moscow124681 Russia

Abstract: Using TCAD modeling, the effect of changing the FinFET structure parameters, such as gate stack layer sizes, fin shape, or doping levels, on the electrical characteristics of the device is studied. © 20... 详细信息

关键词： FinFET

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Adaptive Arrays for GNSS Receivers

Adaptive Arrays for GNSS Receivers

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Informatics, Electronics, and Radio Engineering (PIERE), International Conference problems of

作者： Victor I. Djigan Department of Design Problems in Microelectronics National Research Center “Kurchatov Institute” Moscow Russia

ISBN: (数字)9798331516321

ISBN: (纸本)9798331516338

关键词： Global navigation satellite system Satellite antennas Satellites Satellite broadcasting Adaptive arrays Receiving antennas Omnidirectional antennas Linear antenna arrays Informatics Antenna radiation patterns

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Radiation Hardened Components of Semicustom Analog Microcircuits

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Russian microelectronics 2023年第7期52卷 599-607页

作者： Dvornikov, O.V. Tchekhovsky, V.A. Prokopenko, N.N. Galkin, Ya. D. Kunts, A.V. Chumakov, V.E. JSC Minsk Scientific Research Instrument-Making Institute Minsk220113 Belarus Belarusian State University Minsk220030 Belarus Don State Technical University Rostov Oblast Rostov-on-Don344002 Russia Institute for Design Problems in Microelectronics Russian Academy of Sciences Zelenograd124681 Russia Belarusian State University of Informatics and Radioelectronics Minsk220013 Belarus

Abstract—: An MH2XA031 master slice array (basic matrix crystal (BMC)) is applied for designing and semicustom production of analog integrated circuits (ICs) operating in extreme conditions. It can be effectively used only with a clear understanding of the permissible ranges of changes in the parameters of analog components when exposed to various types of penetrating radiation. In this study, with the help of circuit simulation, the effect of neutron fluence up to 1014 neutrons/cm2 and the absorbed dose of gamma rays up to 3 Mrad on the static parameters of the components of the MH2XA031 circuit design library—an ADComp3 comparator, an OAmp2 low zero offset voltage operational amplifier, an OAmp8 multidifferential operational amplifier, and a charge-sensitive amplifier (CSA) with an input double-gate transistor—is studied. It is established that the ADComp3 comparator, the OAmp2 and OAmp8 amplifiers, and the CSA remain operational at an absorbed dose of gamma rays equal to 3 Mrad. The permissible neutron fluence values for ADComp3, OAmp8, and CSA are 1014 neutrons/cm2;and for OAmp2, 1013 neutrons/cm2. It is established that modeling the radiation changes in the parameters of the components at higher neutron fluences (more than 1014 neutrons/cm2) and the absorbed gamma quanta of more than 3 Mrad is advisable after experimental verification of the adequacy of the transistor models used at the specified levels of penetrating radiation. © Pleiades Publishing, Ltd. 2023. ISSN 1063-7397, Russian microelectronics, 2023, Vol. 52, No. 7, pp. 599–607. Pleiades Publishing, Ltd., 2023. Russian Text The Author(s), 2022, published in Izvestiya Vysshikh Uchebnykh Zavedenii, Elektronika, 2022, Vol. 27, No. 3, pp. 308–321.

关键词： Operational amplifiers

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High-Speed Broadband Operational Amplifiers on a Master Slice Array

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Russian microelectronics 2023年第7期52卷 702-710页

作者： Dvornikov, O.V. Tchekhovsky, V.A. Prokopenko, N.N. Galkin, Ya. D. Kunts, A.V. Chumakov, V.E. JSC Minsk Scientific Research Instrument-Making Institute Minsk220113 Belarus Belarusian State University Minsk220006 Belarus Don State Technical University Rostov oblast Rostov-on-Don344002 Russia Institute for Design Problems in Microelectronics Russian Academy of Sciences Moscow124365 Russia Belarusian State University of Informatics and Radioelectronics Minsk220013 Belarus

Abstract: High-speed operational amplifiers are widely used in quantum-optical systems and equipment for recording fast pulses. The high level of parameters of such products is ensured by the use of modern technological routes for manufacturing microcircuits containing complementary bipolar transistors with a high cutoff frequency and a low parasitic collector capacitance. These technological routes for the manufacture of microcircuits are not available in Russia and Belarus. In order to meet the existing needs of the domestic market for radio-electronic equipment, two operational amplifiers on an MN2KhA031 master slice array (MSA) with unified stages and the possibility of changing the parameters by selecting the resistance of the current-conducting resistors and the capacity of the balancing capacitor are presented. The circuit diagrams are described and the results of the circuit modeling of two products are presented: a high-speed operational amplifier OAmp9 with a gain bandwidth product of more than 600 MHz, an output voltage rise rate of over 400 V/μs with the static parameters corresponding to general-purpose operational amplifier applications, and a precision low-noise OAmp10 amplifier with a gain of about 2 × 106, an offset voltage of less than 50 μV, and a spectral noise floor relative to the input of about 1 nV/Hz0.5. The directions for further modernization of the developed amplifiers are formulated, especially, the reduction of the parasitic collector capacitance of transistors by design engineering, applying a reverse bias voltage, and the application of nonlinear correction circuits, which allow bringing the amplifiers’ performance in the large-signal mode closer to their performance in the low-signal mode. © Pleiades Publishing, Ltd. 2023. ISSN 1063-7397, Russian microelectronics, 2023, Vol. 52, No. 7, pp. 702–710. Pleiades Publishing, Ltd., 2023. Russian Text The Author(s), 2023, published in Izvestiya Vysshikh Uchebnykh Zavedenii, Elektronika, 2023

关键词： Operational amplifiers

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Applying Machine Learning Methods to Signal Integrity Analysis

Applying Machine Learning Methods to Signal Integrity Analys...

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2024 Ivannikov Open Conference, ISPRAS 2024

作者： Zhigulin, Alexey Rogozhinskiy, Mikhail Solovyev, Roman Telpukhov, Dmitriy Levchenko, Nikolay Stempkovskiy, Alexander Pereverzev, Leonid AlphaCHIP LLC Dept. of Automation of Design of Integrated Circuits Moscow Russia AlphaCHIP LLC Dept. of Design of Integrated Circuits Moscow Russia AlphaCHIP LLC Innovation Activities Moscow Russia AlphaCHIP LLC Deputy General Director for Research Moscow Russia NRC 'Kurchatov Institute' Department for Design Problems in Microelectronics Moscow Russia AlphaCHIP LLC Moscow Russia

ISBN: (纸本)9798331526023

Voltage spikes caused by signal switching in adjacent circuits can lead to false switching and failures in integrated circuits. To identify such risks, signal integrity (SI) analysis is performed by extracting parasitic RC networks, followed by SPICE simulation or application of analytical methods. However, this process is time-consuming. This research proposes using machine learning methods to rapidly and accurately predict the results of SI analysis without the need for computationally expensive modeling. It accelerates SI analysis a lot with low accuracy losses. Also, this paper introduces new reduction model for victim-aggressor pair that is more accurate than previously used. © 2024 IEEE.

关键词： Adversarial machine learning

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