检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

68 篇 会议
18 篇 期刊文献

馆藏范围

86 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

45 篇 工学
- 36 篇 电子科学与技术（可...
- 19 篇 计算机科学与技术...
- 19 篇 软件工程
- 13 篇 电气工程
- 10 篇 信息与通信工程
- 5 篇 材料科学与工程（可...
- 5 篇 土木工程
- 4 篇 控制科学与工程
- 3 篇 光学工程
- 3 篇 动力工程及工程热...
- 2 篇 力学（可授工学、理...
- 2 篇 仪器科学与技术
- 2 篇 化学工程与技术
- 2 篇 生物工程
- 1 篇 冶金工程
- 1 篇 石油与天然气工程
- 1 篇 交通运输工程
- 1 篇 航空宇航科学与技...
- 1 篇 生物医学工程（可授...
- 1 篇 安全科学与工程
23 篇 理学
- 12 篇 物理学
- 8 篇 数学
- 4 篇 化学
- 3 篇 系统科学
- 2 篇 生物学
- 1 篇 地质学
- 1 篇 统计学（可授理学、...
2 篇 管理学
- 2 篇 管理科学与工程(可...
1 篇 医学
- 1 篇 基础医学(可授医学...

主题

8 篇 operational ampl...
7 篇 computational mo...
6 篇 temperature dist...
6 篇 logic gates
6 篇 resistors
5 篇 jfets
5 篇 standards
4 篇 cmos integrated ...
4 篇 transistors
4 篇 phase shifters
4 篇 capacitance
4 篇 silicon
4 篇 analytical model...
4 篇 radiation effect...
4 篇 integrated circu...
4 篇 calibration
3 篇 power demand
3 篇 temperature meas...
3 篇 semiconductor de...
3 篇 integrated circu...

机构

12 篇 institute for de...
11 篇 institute for de...
10 篇 don state techni...
9 篇 national researc...
9 篇 national researc...
7 篇 national researc...
5 篇 institute of mic...
4 篇 institute for de...
4 篇 the institute fo...
4 篇 institute for de...
3 篇 institute for nu...
3 篇 institute for de...
3 篇 minsk research i...
2 篇 southern federal...
2 篇 belarusian state...
2 篇 institute for de...
2 篇 southern federal...
2 篇 national researc...
2 篇 moscow
2 篇 laboratory of bi...

作者

10 篇 nikolay n. proko...
8 篇 oleg v. dvorniko...
6 篇 petrosyants k.o.
6 篇 vladimir a. tche...
6 篇 anna v. bugakova
6 篇 popov d.a.
4 篇 alexander ivanni...
4 篇 konstantin o. pe...
4 篇 gavrilov s.v.
4 篇 aleksandr romano...
3 篇 valentin l. dzia...
3 篇 djigan victor i.
3 篇 kurganov vladisl...
3 篇 silkin d.s.
3 篇 solovyev roman
3 篇 tchekhovski vlad...
3 篇 kharitonov i.a.
3 篇 alexander stempk...
3 篇 igor a. khariton...
3 篇 dvornikov oleg v...

语言

82 篇 英文
3 篇 俄文
1 篇 中文

检索条件"机构=Research Institute of Design Problems in Microelectronics"

共 86 条记录，以下是51-60 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

TCAD-SPICE simulation of MOSFET switch delay time for different CMOS technologies

TCAD-SPICE simulation of MOSFET switch delay time for differ...

引用

2011 9th East-West design and Test Symposium, EWDTS'2011

作者： Petrosyants, K.O. Orekhov, E.V. Popov, D.A. Kharitonov, I.A. Sambursky, L.M. Yatmanov, A.P. Voevodin, A.V. Mansurov, A.N. Moscow State Institute of Electronics and Mathematics Technical University 3 B. Tryokhsvyatitelskiy side-street Moscow 109028 Russia Institute for Design Problems in Microelectronics Russian Academy of Sciences 3 Sovetskaya Street Moscow 124681 Russia Measuring Systems Research Institute Named after Yu. Ye. Sedakov GSP-486 N. Novgorod 603905 Russia

ISBN: (纸本)9781457719578

A comparison of delay time (td) for n- and p-MOSFETs switches with silicon on sapphire (SOS), silicon on insulator (SOI) and bulk silicon structures is presented. Two step TCAD-SPICE simulation procedure was used to define td for the set of 3.00.25 um MOSFETs fabricated by the three mentioned technologies. It was shown that 0.5 um Peregrine UTSi SOS n- and p-MOSFET provided the td reduction of 220-240% in comparison with bulk silicon and 20-25% with SOI. © 2011 IEEE.

关键词： CMOS integrated circuits

来源：评论

学校读者我要写书评

暂无评论

Permutation of Phase Shifter Control Codes to Increase Efficiency of Antenna Array Calibration

Permutation of Phase Shifter Control Codes to Increase Effic...

引用

IEEE NW Russia Young researchers in Electrical and Electronic Engineering Conference (EIConRusNW)

作者： Vladislav V. Kurganov Victor I. Djigan National Research University of Electronic Technology (MIET) Moscow Russian Federation Institute for Design Problems in Microelectronics of RAS National Research University of Electronic Technology Moscow Russian Federation

ISBN: (数字)9781728157610

ISBN: (纸本)9781728157627

The paper presents an algorithm of Reducing the Antenna Array Phase Shifters Errors (RAAPSE), caused by technological deviation of the phase shift of bits. The algorithm is based on preliminary measuring and permutation of phase values of PS, and using the nearest value to one, estimated by AA calibration algorithm. This allows to reduce the error in phase setting to the value of the least significant bit of the PS. The RAAPSE algorithm is used together with Antenna Array (AA) calibration algorithms, which estimate and compensate AA channel phase errors by PS. The RAAPSE algorithm increases AA calibration the accuracy or reduce the number of measurements during the calibration, ensuring the required calibration accuracy.

关键词： Calibration Phased arrays Phase measurement Phase shifters Antenna measurements Microwave antenna arrays

来源：评论

学校读者我要写书评

暂无评论

Methods of Slew Rate Verification of Operational Amplifier Macro Model

Methods of Slew Rate Verification of Operational Amplifier M...

引用

International Siberian Conference on Control and Communications

作者： Alexander Ivannikov Anatolij Kozhevnikov Sergej Tumkovskiy The Institute for Design Problems in Microelectronics of Russian Academy of Sciences Moscow Zelenograd Russian Federation National Research University Higher School of Economics Moscow Russian Federation

Three methods of operational amplifier (Op amp) slew rate verification are considered. These methods are illustrated through the example of SPICE macro models of Op amp LMH6642 by Texas Instruments and OP37 by Analog ... 详细信息

ISBN: (纸本)9781467383844

关键词： operational amplifier macro model LTSpice circuit simulation verification slew rate

来源：评论

学校读者我要写书评

暂无评论

SystemC NoC simulation as the alternative to the HDL and high-level modeling

SystemC NoC simulation as the alternative to the HDL and hig...

引用

Open Innovations Association and Seminar on Information Security and Protection of Information Technology (FRUCT-ISPIT), Conference of

作者： Aleksandr Romanov Aleksandr Ivannikov National Research University Higher School of Economics Moscow Russian Federation The Institute for Design Problems in Microelectronics of Russian Academy of Sciences Moscow Zelenograd Russian Federation

ISBN: (纸本)9781509025008

Actual trends of networks-on-chip research and known approaches to their modeling are considered. The characteristics of analytic and high-/low-level simulation are given. The programming language SystemC as an alternative solution to create models of networks-on-chip is proposed, and SystemC models speed increase methodic is observed.

关键词： Solid modeling Analytical models Unified modeling language Object oriented modeling Hardware design languages Routing Topology

来源：评论

学校读者我要写书评

暂无评论

Set-theoretic Model of Digital Systems Functioning

Set-theoretic Model of Digital Systems Functioning

引用

International Siberian Conference on Control and Communications

作者： Alexander Ivannikov Aleksandr Romanov Alexander Stempkovsky The Institute for Design Problems in Microelectronics of Russian Academy of Sciences Moscow Zelenograd Russian Federation National Research University Higher School of Economics Moscow Russian Federation

ISBN: (纸本)9781467383844

For projects of digital systems, defined by the circuit diagram of blocks connection and software, it is proposed to use a mathematical model in the terms of the set theory and the theory of stationary dynamic systems. Due to the fact that the supply of input signals to the digital system in some cases depends on the output ready signals, the concept of input and output interactions is introduced. These interactions are sequences of events each of which is the change of the input and output variables from one value to another at a particular time. The aim of a digital system project debugging is formulated in terms of a comparison of the family of stationary dynamic systems describing the desired external behavior of a digital system and a family of systems defined by the structure of the digital system design.

关键词： design of digital systems design debugging simulation of digital systems stationary dynamic systems as a model of digital systems formal description of design debugging by computer simulation

来源：评论

学校读者我要写书评

暂无评论

The Radiation Effect on the Parameters of Reference Voltage Sources and Charge-Sensitive Amplifiers of the Structured Array MH2XA010

The Radiation Effect on the Parameters of Reference Voltage ...

引用

European Conference on Radiation and its Effects on Components and Systems (RADECS)

作者： Oleg V. Dvornikov Valentine L. Dziatlau Nikolay N. Prokopenko Vladimir A. Tchekhovski Anna V. Bugakova Plc. “Minsk research instrument- making institute” (MNIPI) Minsk Belarus Don State Technical University Rostov-on-Don Institute for Design Problems in Microelectronics of RAS Zelenograd Institute for Nuclear Problems of Belarusian State University Minsk Belarus

ISBN: (数字)9781728102160

ISBN: (纸本)9781728102177

Theeffect of 6 MeV fast electrons and 60 Co gamma radiation on the parameters of analog components of the structured array (SA) MH2XA010 - the reference voltage source (RVS) and the charge-sensitive amplifier (CSA) is compared. It is shown that at the absorbed dose of gamma radiation DG = 2.04 Mrad and the electron fluence 3.0×10 14 el/cm 2 the change in the RVS and CSA parameters doesn't exceed the norms established for the operating temperature range. SA MH2XA010 is recommended for the fabrication of analog sensor interfaces operating under hard operation conditions.

关键词： Transistors Resistors Radiation effects Noise measurement Junctions Current measurement Capacitance

来源：评论

学校读者我要写书评

暂无评论

Quasi-3D Thermal Simulation of Multi-Chip Stack Embedding Package

Quasi-3D Thermal Simulation of Multi-Chip Stack Embedding Pa...

引用

International Workshop on Thermal Investigation of ICs and Systems (THERMINIC)

作者： Konstantin O. Petrosyants Nikita I. Ryabov Institute for Design Problems in Microelectronics Russian Academy of Sciences Moscow Russian Federation National Research University Higher School of Economics (Moscow Institute of Electronics and Mathematics) Moscow Russian Federation

Multi-chip embedded PCBs were in resent years the mainstream technology of electronic packaging size reduction and at the same time providing improved performance. Ultra-small package size obviously strongly impacts the SiP module thermal behaviour. Unfortunately the complete thermal design methodology was not developed for this technology till now. In this work the problem of thermal design is completely solved using quasi-3D approach taking into account the main features of embedded PCB constructions: 1) 3D integration of ICs and board; 2) a large number of thinned layers of different materials; 3) vertical z-axis interconnections through the package layers. A ten times decrease of central processing unit (CPU) time is achieved as compared with the full 3D solutions obtained by commercial universal 3D simulators, while saving the sufficient accuracy. The simulation error of maximal temperature T MAX determination for different types of packages is not more than 10-20%.

关键词： Heating systems Solid modeling Temperature distribution Three-dimensional displays Computational modeling Electronic packaging thermal management Numerical models

来源：评论

学校读者我要写书评

暂无评论

TCAD-SPICE simulation of MOSFET switch delay time for different CMOS technologies

TCAD-SPICE simulation of MOSFET switch delay time for differ...

引用

East-West design & Test Symposium (EWDTS)

作者： K. O. Petrosyants E. V. Orekhov D. A. Popov I. A. Kharitonov L. M. Sambursky A. P. Yatmanov A. V. Voevodin A. N. Mansurov Moscow State Institute of Electronics and Mathematics Technical University Moscow Russia Institute for Design Problems in Microelectronics Russian Academy of Science Moscow Russia Measuring Systems Research Institute Nizhny Novgorod Russia

A comparison of delay time (td) for n- and p-MOSFETs switches with silicon on sapphire (SOS), silicon on insulator (SOI) and bulk silicon structures is presented. Two step TCAD-SPICE simulation procedure was used to define td for the set of 3.0...0.25 um MOSFETs fabricated by the three mentioned technologies. It was shown that 0.5 um Peregrine UTSi SOS n- and p-MOSFET provided the td reduction of 220-240% in comparison with bulk silicon and 20-25% with SOI.

关键词： Silicon Logic gates MOSFET circuits Delay Silicon on insulator technology CMOS integrated circuits Switching circuits

来源：评论

学校读者我要写书评

暂无评论

JFET (Si,SiC, GaAs) Compensating Voltage Regulators for the Operation with Sensor Interfaces of Physical Quantities at Low Temperatures

JFET (Si,SiC, GaAs) Compensating Voltage Regulators for the ...

引用

IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)

作者： Nikolay Prokopenko Alexey Zhuk Ilya Pakhomov Oleg Dvornikov Don State Technical University Rostov-on-Don Russia Institute for Design Problems in Microelectronics of Russian Academy of Sciences Zelenograd Russia Minsk Research Instrument-Making Institute JSC Minsk Belarus

ISBN: (数字)9781728188782

ISBN: (纸本)9781728188799

A new architecture of the compensating voltage regulator (CVR) without current mirrors is presented, which can be implemented on the single-type silicon (Si), silicon carbide (SiC) or gallium arsenide (GaAs) JFETs. The use of Si, SiC and GaAs technologies makes it possible to ensure reliable operation of the CVR in severe operating conditions at a low noise level. The computer simulation results show that the proposed Si JFET CVR performs (due to new circuitry) its main functions in the cryogenic temperature range and it is characterized by the resistance to the penetrating radiation.

关键词： Temperature sensors Temperature distribution Silicon carbide Gallium arsenide Silicon JFETs Voltage control

来源：评论

学校读者我要写书评

暂无评论

The microcircuits MH2XA010-02/03 for signal processing of optoelectronic sensors

The microcircuits MH2XA010-02/03 for signal processing of op...

引用

Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)

作者： Oleg V. Dvornikov Anna V. Bugakova Nikolay N. Prokopenko Valentin L. Dziatlau Ilya V. Pakhomov OJSC “Minsk Scientific and Research Instrument-Making Institute” Minsk Belarus Don State Technical University Rostov-on-Don Russia Institute for Design Problems in Microelectronics of Russian Academy of Sciences Zelenograd Russia

The article considers multichannel integrated circuits (ICs) MH2XA010-02/03, which are realized on the radiation-hardened structured array (SA) MH2XA010 and designed for analog signal processing of optoelectronic sensors. It gives the electric circuits of ICs, the description of their functionality features and the measurement results of their main parameters.

关键词： Resistance Resistors Integrated circuits Current measurement Electron devices Sensors Voltage control

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共9页 << < 1 2 3 4 5 6 7 8 9 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：